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ISL95810WIRT8ZR5481 Intersil Corporation ISL95810W PRE-PROGRAMMED TO LOWEST RESISTANCE SETTING, XDCP, visit Intersil
ISL28113SOT23EVAL1Z Intersil Corporation Single General Purpose Micropower, RRIO Operational Amplifier; Package: Eval Board visit Intersil
ISL28114SOT23EVAL1Z Intersil Corporation Single General Purpose Micropower, RRIO Operational Amplifiers; Package: Eval Board visit Intersil
LM3550SP/NOPB Texas Instruments A Flash LED Driver with Automatic Vf and ESR Detection for Mobile Camera Systems 20-UQFN -30 to 85 visit Texas Instruments Buy
PGA301QRHHRQ1 Texas Instruments Automotive Catalog Sensor Signal Conditioner for Resistive Sensor with Compensation Algorithm 36-VQFN -40 to 125 visit Texas Instruments
LM3550SPX/NOPB Texas Instruments A Flash LED Driver with Automatic Vf and ESR Detection for Mobile Camera Systems 20-UQFN -30 to 85 visit Texas Instruments

base resistance for SOT23

Catalog Datasheet MFG & Type PDF Document Tags

On semiconductor date Code sot-23

Abstract: sot-23 body marking C 1 / Tape & Reel 3,000 SOT-23 (Pb-Free) For information on tape and reel specifications, including , COLLECTOR 3 ESD Rating - Machine Model: >400 V Pb-Free Packages are Available 1 BASE MAXIMUM , Characteristic Thermal Resistance, Junction-to-Ambient (Note 1) Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient (Note 2) Junction and Storage Temperature Range SOT-23 CASE 318 STYLE 6 mAdc Maximum ratings are those values beyond
ON Semiconductor
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BC557 sot package sot-23

Abstract: BC557 sot-23 ://onsemi.com · Pb-Free Packages are Available COLLECTOR 3 1 BASE MAXIMUM RATINGS (TA = 25°C unless , 1 V mAdc 2 3 SOT-23 CASE 318 STYLE 6 Emitter-Base Voltage Collector Current - Continuous , Characteristic Total Device Dissipation FR- 5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance , Resistance, Junction-to-Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 556 Unit mW mW/°C °C/W , page 413 of this data sheet. RqJA TJ, Tstg Preferred devices are recommended choices for future
ON Semiconductor
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BC557 sot-23

Abstract: BC556 sot package sot-23 ://onsemi.com 5 BC856ALT1 Series INFORMATION FOR USING THE SOT-23 SURFACE MOUNT PACKAGE MINIMUM , the values provided on the data sheet for the SOT-23 package, PD can be calculated as follows: PD = , milliwatts. PD = 150°C - 25°C 556°C/W = 225 milliwatts The 556°C/W for the SOT-23 package assumes , Emitter-Base Voltage Collector Current - Continuous COLLECTOR 3 1 BASE 2 EMITTER MARKING DIAGRAM 3 , above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (Note
ON Semiconductor
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BC857 BC858 BC856ALT3 BC856BLT1 BC856BLT3 BC857BLT1 BC557 sot-23 BC556 sot package sot-23 BC557 sot package sot-23 BC857A BC857b difference bc557 package sot23 mark 5c SOT-23 BC856 BC859 3000/T

bc816

Abstract: BC817 MAXIMUM RATINGS Rating Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current - Continuous Symbol VCEO VCBO VEBO IC Value 45 50 5.0 500 Unit V V V mAdc 2 EMITTER 1 BASE , 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient Junction and Storage , -16LT1 = 6A BC817-25LT1 = 6B BC817-40LT1 = 6C 556 mW mW/°C °C/W SOT-23 CASE 318-08 STYLE 6 Max Unit
ON Semiconductor
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bc816 BC817 SOT-23 6C BC817-16LT1 BC816-16LT1 BC817-16LT/D BC817-16LT1/D

marking 6c sot23

Abstract: BC817 ://onsemi.com · Pb-Free Packages are Available 1 BASE Symbol VCEO VCBO VEBO IC Value 45 50 5.0 500 Unit V V V mAdc 1 COLLECTOR 3 MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous 2 EMITTER 3 Maximum ratings are , = 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate, (Note 8) TA = 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient Junction and Storage
ON Semiconductor
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marking 6c sot23 6A SOT23 sot-23 marking code 352 6B SOT23 6C sot23 On semiconductor date Code sot-23 SBC817-40LT3 BRD8011/D

MMBTA55LT3G

Abstract: MMBTA56LT1 Features · Pb-Free Packages are Available COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Collector -Emitter Voltage Value Unit VCEO MMBTA55 MMBTA56 Collector -Base Voltage -60 -80 VCBO MMBTA55 MMBTA56 Emitter -Base Voltage Collector Current - Continuous 2 EMITTER Vdc , Characteristic Total Device Dissipation FR- 5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance , Resistance, Junction-to-Ambient Junction and Storage Temperature Symbol Max Unit 225 1.8 mW
ON Semiconductor
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MMBTA55LT1 MMBTA56LT1 MMBTA55LT3G MARKING code GM SOT 23 MMBTA55LT1G MMBTA55LT3

MARKING 358 sot-23

Abstract: marking code 359 sot-23 Silicon Features http://onsemi.com COLLECTOR 3 1 BASE Symbol VCEO Value 65 45 30 Vdc 80 50 30 Vdc 6.0 , VCBO VEBO SOT-23 CASE 318 STYLE 6 IC Maximum ratings are those values beyond which device , Resistance, Junction-to-Ambient (Note 1) Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient (Note 2) Junction and Storage Temperature Range , dimensions section on page 359 of this data sheet. Preferred devices are recommended choices for future use
ON Semiconductor
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MARKING 358 sot-23 marking code 359 sot-23 marking 1G SOT23 359 sot23 355 sot-23 marking 1F SOT-23 BC846ALT1 BC846 BC847 BC848 BC850 BC849

BC557 sot package sot-23

Abstract: BC557 sot-23 ://onsemi.com · Pb-Free Packages are Available COLLECTOR 3 1 BASE MAXIMUM RATINGS (TA = 25°C unless , CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature RqJA SOT-23 CASE 318 STYLE 6 MARKING DIAGRAM PD 300 2.4 mW mW/°C RqJA 417 , this data sheet. Preferred devices are recommended choices for future use and best overall value
ON Semiconductor
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BC857BLT1G operation of BC557 TRANSISTOR BC558 SOT-23 BC556 SOT BC557 sot package sot23 3j BC856ALT1/D

BC557 sot-23

Abstract: 3f SOT-23 ://onsemi.com · Pb-Free Packages are Available COLLECTOR 3 1 BASE MAXIMUM RATINGS (TA = 25°C unless , Collector Current - Continuous 3 SOT-23 CASE 318 STYLE 6 1 Maximum ratings are those values , , (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance , devices are recommended choices for future use and best overall value. 1. FR-5 = 1.0 x 0.75 x 0.062 in
ON Semiconductor
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3f SOT-23 transistor BC559 3F SOT23-3 transistor BC557 base collector emitter MARKING 3A SOT-23 3B SOT23-3

MMBTA05LT1G

Abstract: 1GM sot-23 Collector -Emitter Voltage MMBTA05LT1 MMBTA06LT1 VCEO Collector -Base Voltage VCBO Collector Current - Continuous Unit 1 BASE Vdc 2 EMITTER 60 80 Vdc 60 80 MMBTA05LT1 MMBTA06LT1 Emitter -Base Voltage Value 3 VEBO 4.0 Vdc IC 500 mAdc 1 2 THERMAL , mW/°C RqJA 417 °C/W TJ, Tstg -55 to +150 °C Thermal Resistance , Resistance, Junction-to-Ambient Junction and Storage Temperature Maximum ratings are those values beyond
ON Semiconductor
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MMBTA05LT3 MMBTA05LT3G MMBTA06LT1G MMBTA06LT3 MMBTA06LT3G MMBTA05LT1G 1GM sot-23 base resistance for SOT23 MMBTA06 on Marking 1GM MMBTA05 05LT1G

BC557 sot package sot-23

Abstract: BC857BLT1G ://onsemi.com · Pb-Free Packages are Available COLLECTOR 3 1 BASE Unit V 2 EMITTER MAXIMUM RATINGS (TA , above 25°C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature Max 225 1.8 556 Unit mW mW/°C °C/W SOT-23 (TO-236AB) CASE 318 STYLE 6 MARKING DIAGRAM RqJA PD , choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2008
ON Semiconductor
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MARKING 3E SOT23 BC557 BC856ALT1G pnp transistor A1 sot-23 3e marking

transistor 1f sot-23

Abstract: transistor 2F to-236 , BASE CURRENT (mA) 5.0 10 20 -1.8 qVB for VBE Cib 10 6.0 Cob 0.1 0.2 1.0 , Reel SOT-23 SOT-23 (Pb-Free) 10,000 / Tape & Reel For information on tape and reel , BC849CLT1 BC849CLT3 Shipping SOT-23 2G 3 000 / Tape & Reel 3,000 SOT-23 (Pb-Free) For , BASE MAXIMUM RATINGS Rating Collector-Emitter Voltage Symbol Vdc 65 45 30 3 VCBO , CHARACTERISTICS Characteristic Thermal Resistance, Junction-to-Ambient (Note 1) Total Device Dissipation
ON Semiconductor
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transistor 1f sot-23 transistor 2F to-236 BC847 sot package sot-23 transistors sot-23 "Marking code 26" sot-23 body marking A 4 BC850CLT1G BC846ALT1/D

LBC846BLT1G

Abstract: 0.05 0.1 1.0 2.0 0.2 0.5 IB, BASE CURRENT (mA) 5.0 10 1.4 1.8 qVB for VBE 2.6 , S-LBC846ALT1G Series â'¢ S- Prefix for Automotive and Other Applications Requiring Unique Site 3 and , TJ, Tstg â'"55 to +150 °C Thermal Resistance, Junction to Ambient (Note 1.) Total Device Dissipation Alumina Substrate (Note 2.) TA = 25°C Derate above 25°C Thermal Resistance, Junction to , S-LBC847ALT3G LBC847BLT1G S-LBC847BLT1G LBC847BLT3G S-LBC847BLT3G 1A SOT-23 3000/Tape&Reel
Leshan Radio Company
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LBC846BLT1G LBC846ALT1G AEC-Q101 LBC846 LBC847 LBC850 LBC848

LBC850BLT1G

Abstract: 0.05 0.1 1.0 2.0 0.2 0.5 IB, BASE CURRENT (mA) 5.0 10 1.4 1.8 qVB for VBE 2.6 , declare that the material of product compliance with RoHS requirements. â'¢ S- Prefix for Automotive and , Thermal Resistance, Junction to Ambient (Note 1.) Total Device Dissipation Alumina Substrate (Note 2.) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient (Note 2.) Junction and , S-LBC848ALT1G LBC848ALT3G S-LBC848ALT3G 1A SOT-23 3000/Tape&Reel LBC848BLT1G S-LBC848BLT1G
Leshan Radio Company
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LBC850BLT1G LBC849 846ALT1G LBC847A LBC847B LBC847C LBC850B

SBC817-40LT1G

Abstract: SBC817-40LT3G ) BC817-16LT1 Shipping SOT-23 Specific Marking 10,000/Tape & Reel For information on tape , ://onsemi.com Features COLLECTOR 3 · Pb-Free Packages are Available 1 BASE MAXIMUM RATINGS Rating Symbol Value Collector - Emitter Voltage VCEO 45 V Collector - Base Voltage VCBO 50 V Emitter - Base Voltage VEBO 5.0 V IC 500 mAdc Symbol Max Unit , °C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25
ON Semiconductor
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SBC817-40LT1G SBC817-40LT3G sot-23 body marking 02 BC807-16LT1/D

5B1 SOT-23

Abstract: BC807-40LT1 ://onsemi.com Features COLLECTOR 3 · Pb-Free Packages are Available 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage VCEO -45 V Collector - Base Voltage VCBO -50 V Emitter - Base Voltage VEBO -5.0 V IC -500 mAdc Collector , implied, damage may occur and reliability may be affected. 2 EMITTER MARKING DIAGRAM SOT-23 , xxxD 1 THERMAL CHARACTERISTICS Characteristic 3 3 xxx PD Thermal Resistance
ON Semiconductor
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BC807-40LT1 5B1 SOT-23 5B1 SOT23-3 MARKING CODE 5B1 BC807 AI mm sot 25 BC807-16LT1 BC807-25LT1
Abstract: IB, BASE CURRENT (mA) 5.0 10 1.4 1.8 qVB for VBE 2.6 3.0 20 0.2 Figure 13 , /°C RqJA 417 °C/W TJ, Tstg â'"55 to +150 °C Thermal Resistance, Junction to , °C Thermal Resistance, Junction to Ambient (Note 2.) Junction and Storage Temperature Range xx 1 2 , MARKING AND ORDERING INFORMATION Device Marking Package Shipping LBC846ALT1G 1A SOT-23 3000/Tape&Reel LBC846ALT3G 1A SOT-23 10000/Tape&Reel LBC846BLT1G 1B SOT-23 3000 Leshan Radio Company
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LBC846A LBC846B LBC850C LBC848A LBC848B LBC848C

FR SOT23-3

Abstract: 1B SOT23-3 1 BASE MAXIMUM RATINGS Rating Collector-Emitter Voltage Symbol Vdc 65 45 30 3 , BC846 BC847, BC850 BC848, BC849 Collector-Base Voltage Value Vdc SOT-23 CASE 318 STYLE 6 , °C Thermal Resistance, Junction-to-Ambient (Note 1) Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient (Note 2) Junction and Storage , choices for future use and best overall value. 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3
ON Semiconductor
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FR SOT23-3 1B SOT23-3 BC847CLT1G sot 23 marking code 1B 1G SOT-23 sot23-3 footprint
Abstract: http://onsemi.com 539 BSS64LT1 INFORMATION FOR USING THE SOT-23 SURFACE MOUNT PACKAGE MINIMUM , The 556°C/W for the SOT-23 package assumes the use of the recommended footprint on a glass epoxy , Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous Symbol VCEO VCBO , Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Max 225 1.8 RqJA PD 556 300 2.4 ON Semiconductor
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236AB BSS64LT1/D

LBC847ALT1G

Abstract: 0.1 1.0 2.0 0.2 0.5 IB, BASE CURRENT (mA) 5.0 10 1.4 1.8 qVB for VBE 2.6 3.0 , '¢ S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change , mW 2 EMIT T ER mAdc THERMAL CHARACTERISTICS Thermal Resistance, Junction to Ambient , °C Thermal Resistance, Junction to Ambient (Note 2.) Junction and Storage Temperature Range MARKING , S-LBC847ALT3G LBC847BLT1G S-LBC847BLT1G LBC847BLT3G S-LBC847BLT3G 1A SOT-23 3000/Tape&Reel 1A
Leshan Radio Company
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LBC847ALT1G BC846ALT1G LBC849B LBC849C
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