NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: NEC/ CALIFORNIA 3QE D bM27M14 Ü0G205M 0G205M fl â- NECC ULTRA LOW NOISE K-BAND HETRO JUNCTION FET NE32100 NE32100 NE32183A NE32183A NE32184A NE32184A FEATURES OUTLINE DIMENSIONS c • SUPER LOW NOISE FIGURE: NF = 1.0 dBTYPatf = 12 GHz • HIGH ASSOCIATED GAIN: Ga = 10.5 dBTYPatf = 12 GHz • GATE LENGTH: La = 0.3 pm • GATE WIDTH: Wo = 200 jjm DESCRIPTION The NE321 NE321 Is a Hetero-Junction FET that utilizes the junction between Sl-doped AIGaAs and undoped GaAs to create a two-dimensional electron gas layer which has higher electron ... | OCR Scan |
6 pages, |
NE32183A INE32184A nec ne3 NE32100 NE32184A 0G205M 0G205M abstract |
| Abstract: / CALIFORNIA 30E D m bM27M14 â-¡Q021Qcî ? HNECC T-45-19-13 T-45-19-13 ABSOLUTE MAXIMUM RATINGS (Ta = 256C) Supply ... | OCR Scan |
4 pages, |
UPB565 SO-64 UPB565C 000E10 000E10 abstract |
| Abstract: NEC/ CALIFORNIA 5bE D â- bM27M14 QQQE40b 4bS HINECC NEC NPN SILICON MICROWAVE TRANSISTOR NE57800 NE57800 NE57807 NE57807 NE57835 NE57835 FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fr = 6 GHz • LOW NOISE FIGURE: 2.5 dB at 2 GHz • HIGH GAIN: 13 dB at 2 GHz • RELIABILITY PROVEN IN SPACE: Platinum-Gold Metallization Hermetic Stripllne Packages Space Qualified CHIP DIMENSIONS (Units In pm) NE57800 NE57800 (CHIP) = "i-Sl-H , FIGURE AND GAIN MEASUREMENT CIRCUIT 3-61 NEC/ CALIFORNIA NE57800 NE57800, NE57807 NE57807, NE57835 NE57835 5bE D bM27M14 ... | OCR Scan |
6 pages, |
NE578 NE AND micro-X NE57807 NE578 nec NE57800 NE57835 2SC2150 NE57800 abstract |
| Abstract: â- bM27M14 D002S5Q D002S5Q 71t, «NECC TYPICAL COMMON BASE SCATTERING PARAMETERS (cont.) Vcs « 10 V, Ic â- 20 ... | OCR Scan |
5 pages, |
NE94432 k 1094 transistor NE94432 abstract |