500 MILLION PARTS FROM 12000 MANUFACTURERS

Datasheet Archive - Datasheet Search Engine

 

Direct from the Manufacturer

Part Manufacturer Description PDF Samples Ordering
LT3905EUD#PBF Linear Technology LT3905 - Boost DC/DC Converter with APD Current Monitor; Package: QFN; Pins: 16; Temperature Range: -40°C to 85°C pdf Buy
LT3905IUD#PBF Linear Technology LT3905 - Boost DC/DC Converter with APD Current Monitor; Package: QFN; Pins: 16; Temperature Range: -40°C to 85°C pdf Buy
LT3905EUD#TRPBF Linear Technology LT3905 - Boost DC/DC Converter with APD Current Monitor; Package: QFN; Pins: 16; Temperature Range: -40°C to 85°C pdf Buy

avalanche diode

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Schottky diode can work in the avalanche area in a given Switch Mode Power Supply (SMPS) is described in , Schottky diode a reference avalanche power capability corresponding to a rectangular current pulse: PARM , figure 3 give the admissible avalanche power for each Schottky diode versus the operating junction , the time, it is difficult to accurately determinate the avalanche power through the diode in the , maximum avalanche peak power occurs for a diode having the lowest clamping voltage. Practically, this ... STMicroelectronics
Original
datasheet

11 pages,
146.75 Kb

transil diode equivalent STPS6045CW STPS3045CT STPS20H100CT STPS16H100CT AN2025 16A-100V an2025 st avalanche diode TEXT
datasheet frame
Abstract: property of the avalanche diode is its ability to safely handle, without damage, relatively large reverse , possible. The reverse characteristic of an avalanche diode is compared in figure 1 with the characteristic of a normal diode. The avalanche diode has low leakage current up to the avalanche voltage and does not show the same increase in leakage current as the normal diode. The silicon of avalanche , , the reverse power handling capability of the avalanche diode is expressed in kW for rectangular ... Dynex
Original
datasheet

5 pages,
81 Kb

snap-off diode slow diode MZ0409W "normal Diode" 1400V Diode normal diode AN5370 AN5370-1 TEXT
datasheet frame
Abstract: greater avalanche capability compared to the standard Schottky diode. Table 1 shows a comparison of the , Correct Avalanche Energy To determine the correct avalanche energy for a rectifying diode in a power , ) For an output rectifying diode to reliably withstand the avalanche surge currents, EA < PARM (TJ , twice the reverse avalanche energy of an equivalent Schottky diode, designers can now be sure that , AN-1010A AN-1010A Application Note SBR® Avalanche Energy 1.0 Introduction The maximum reverse avalanche ... Diodes
Original
datasheet

5 pages,
118.11 Kb

SBR20U100CT 1010A AN-1010A TEXT
datasheet frame
Abstract: other measures which ensure that avalanche current and diode recovery current is distributed evenly , followed by avalanche breakdown, as energy stored in the parasitic inductance by the diode recovery current , p lo it the in te g ral diode w ith confidences. The single-shot avalanche rating guarantees the , advan tages of HEXFET III and the benefits that they bring for the user. Furthermore, the avalanche cap , energy per pulse and the maximum avalanche cur rent allowable under repetitive avalan che conditions ... OCR Scan
datasheet

15 pages,
936.45 Kb

HEXFET III Die an967 AN-944A Gate Drive circuit for irf510 IRF460 APPLICATION NOTE AN949A fet irf840 AN-966A IRF83Q transistor equivalent irf520 transistor equivalent irf710 AN949A High frequency switching transistor equivalent irf740 966a transistor equivalent irf510 TEXT
datasheet frame
Abstract: a schematic representation of avalanche TVS diodes and diode arrays that provide surge protection , protection features. Tables 1 and 2 provide a summary of the features of avalanche TVS diode and diode , that will eventually cause a failure. Avalanche TVS diodes and diode arrays are available in a number , avalanche TVS and diode array protection devices. Bidirectional Avalanche TVS Diodes Diode Array NUP2301 NUP2301 Unidirectional Avalanche TVS Diodes Diode Array with Avalanche Diode NUP1105L NUP1105L NUP2201 NUP2201 ... ON Semiconductor
Original
datasheet

6 pages,
142.5 Kb

AND8232 bidirectional breakdown diodes diode device data on semiconductor NUP1105L NUP2105L NUP2201 NUP2301 SL05 TVS diode Application Note TVS Diode AP209 Z2 J diode AND8231/D AND8231/D TEXT
datasheet frame
Abstract: , STMicroelectronics is proposing a simple tool to determine if a given ST Schottky diode can withstand the avalanche , the Schottky diode: EAP Fig. 2: Avalanche power derating over temperature range. PARM(tp, Tj , admissible avalanche energy of the STPS20H100CT STPS20H100CT at 10ns and 100°C is: EARM(10ns,100°C) = 48.6uJ per diode , AN1768 AN1768 APPLICATION NOTE ® ADMISSIBLE AVALANCHE POWER OF SCHOTTKY DIODES D. JOUVE , intrinsic limits. The increasing use of Schottky diodes in the avalanche area is a good example of this ... STMicroelectronics
Original
datasheet

2 pages,
44.57 Kb

STPS3045CT AN1768 avalanche diode parm STPS1545D STPS2045CT AN-1768 of switch mode power supply STPS30 stps20h100ct TEXT
datasheet frame
Abstract: reverse breakdown-voltage an avalanche pulse in the faster sinterglass diode. It V(BR)R = 500V is , moment sinterglass diode 1 goes into the reverse avalanche mode with a short current peak, approx , an avalanche pulse of approx. 8uWs, which the sinterglass diode must be able to survive! Due to the avalanche current peak of sinterglass diode 1 the stored charge in sinterglass diode 2 is , diode in the SOD57 package such as the BYV26 BYV26 or BYV27 BYV27. The real reverse loss due to the avalanche of ... Vishay Semiconductors
Original
datasheet

5 pages,
164.21 Kb

SF4007 BYW56 V BYW56 BYV27 BYV26 BYT53G zener-diode book Ultra Fast Avalanche Sinterglass Diode TEXT
datasheet frame
Abstract: 10/1000us pulse unless stated otherwise) Peak Pulse Current (8x20us) SA Silicon Avalanche Diode -55 to +150 DO 15 axial P6KE Silicon Avalanche Diode -55 to +150 DO 15 axial & pill SMBJ Silicon Avalanche Diode Medium P6SMBJ Silicon Avalanche Diode 1KSMBJ Silicon Avalanche Diode -55 to +150 DO 214 AA SMT 5.5-30.8 1.5KE Silicon Avalanche Diode -55 to +150 axial & pill ICTE/MPTE Silicon Avalanche Diode -55 to +150 axial 1N56/1N60 1N56/1N60 Silicon Avalanche Diode 5KP Silicon Avalanche Diode High SLD Silicon ... Littelfuse
Original
datasheet

2 pages,
118.39 Kb

sl1021b diode 1n60 DIODE 1n56 avalanche diode 20A Diode axial leads SL1024B SL1024A SL1011A SL1011B SL1021A SL1021B SL1002A SL1003A SL1122A SL1221 SL1026 TEXT
datasheet frame
Abstract: avalanche diode protects against transient spikes and voltage surges that occur in an automobile. The avalanche diode's development for use in rectifier assemblies helps perform two functions: 1. Convert AC current to DC current. 2. If a voltage spike or power surge occurs, the avalanche diode will limit spikes , DIODES An avalanche diode functions and tests differently than regular button diodes. With function and characteristics so different, it is necessary to test the avalanche diode for two different parameters. First ... OCR Scan
datasheet

6 pages,
721.5 Kb

Renard alternator rectifier press fit chrysler D021 delco alternator 7820 rectifier diode pressfit alternator diode 65 amp DL 7760 Delco DIODE RECTIFIER press fit diode LR 105 press fit alternator diodes delco remy alternators 7901 rectifier TEXT
datasheet frame
Abstract: D Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free G D S , dv/dt TJ Peak Diode Recovery f 3.0 V/ns Operating Junction and -55 to + 175 TSTG , ) 10lbfxin (1.1Nxm) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy e EAS (tested) IAR Single Pulse Avalanche Energy Tested Value k ... International Rectifier
Original
datasheet

10 pages,
340.34 Kb

TEXT
datasheet frame

Archived Files

Abstract Saved from Date Saved File Size Type Download
Product listing   BAS29 BAS29 - General purpose controlled avalanche (double) diodes BAS31 BAS31 - General purpose controlled avalanche (double) diodes BAS35 BAS35 - General purpose controlled avalanche (double) diodes BAX12 BAX12 - Controlled avalanche diode BAX12A BAX12A - Controlled avalanche diode BAX18 BAX18 - General purpose diode
/datasheets/files/philips/catalog/listing/41749-v1.html
Philips 17/02/2002 2.43 Kb HTML 41749-v1.html
) diodes BAX12 BAX12 - Controlled avalanche diode BAX12A BAX12A - Controlled avalanche diode BAX18 BAX18 - General purpose diode ]   Ripple blocking diodes - [4]   Schottky diode ]   Switching diodes - [78]   Controlled avalanche avalanche (double) diodes BAS31 BAS31 - General purpose controlled avalanche
/datasheets/files/philips/catalog/219/282/27046/30927/41738/41749/index.htm
Philips 17/02/2002 57.39 Kb HTM index.htm
double diode BAS29 BAS29 - General purpose controlled avalanche (double) diodes BAS31 BAS31 - General purpose controlled avalanche (double) diodes BAS316 BAS316 - High-speed diode purpose controlled avalanche (double) diodes BAS45A BAS45A - Low-leakage diode diode BAW62 BAW62 - High-speed diode BAX12 BAX12 - Controlled avalanche diode BAX12A BAX12A - Controlled avalanche diode BAX18 BAX18 - General purpose diode
/datasheets/files/philips/catalog/listing/41738-v1.html
Philips 17/02/2002 24.01 Kb HTML 41738-v1.html
BAX12 BAX12     Controlled avalanche diode The BAX12 BAX12 is a controlled avalanche diode fabricated in planar technology, and encapsulated in the (01-May-99) BAX12 BAX12 Controlled avalanche diode FSM max (A) V R max (V) Configuration BAX12 BAX12 Controlled avalanche switching diodes 35.0 35.0 35.0 90 90 35.0 35.0 Controlled avalanche switching diodes 35.0 90 Controlled
/datasheets/files/philips/pip/bax12_2.html
Philips 14/02/2002 18.58 Kb HTML bax12_2.html
level, and a capacity to deviate currents much higher than those possible for an avalanche diode much higher current than the avalanche diode, for example, for the same junction temperature. Since the conducting state at low V on . This portion of the characteristic is identical to that of an avalanche diode ST | TRISIL CROWBAR TYPE PROTECTION DIODE AN320 AN320 TRISIL CROWBAR TYPE PROTECTION DIODE Document Number: 5649 Date Update: 13/02/98 Pages
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/5649-v2.htm
STMicroelectronics 14/06/1999 13.55 Kb HTM 5649-v2.htm
capacity to deviate currents much higher than those possible for an avalanche diode (TRANSIL). Furthermore avalanche diode, for example, for the same junction temperature. Since the voltage to be taken into low V on . This portion of the characteristic is identical to that of an avalanche diode. Thus within ST | TRISIL CROWBAR TYPE PROTECTION DIODE Application Note TRISIL CROWBAR TYPE PROTECTION DIODE AN320 AN320 Document
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/5649.htm
STMicroelectronics 20/10/2000 16.02 Kb HTM 5649.htm
possible for an avalanche diode (TRANSIL). Furthermore, this limitation is independent of the avalanche conduct a much higher current than the avalanche diode, for example, for the same junction . This portion of the characteristic is identical to that of an avalanche diode. Thus within this avalanche mode. The structure up to this current level operates like a diode (junction J 2 ). The side ST | TRISIL CROWBAR TYPE PROTECTION DIODE
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/5649-v3.htm
STMicroelectronics 25/05/2000 15.39 Kb HTM 5649-v3.htm
level, and a capacity to deviate currents much higher than those possible for an avalanche diode much higher current than the avalanche diode, for example, for the same junction temperature. Since the conducting state at low V on . This portion of the characteristic is identical to that of an avalanche diode ST | TRISIL CROWBAR TYPE PROTECTION DIODE AN320 AN320 TRISIL CROWBAR TYPE PROTECTION DIODE Document Number: 5649 Date Update: 13/02/98 Pages
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/5649-v1.htm
STMicroelectronics 02/04/1999 13.59 Kb HTM 5649-v1.htm
, thus accelerating the current decay. 2) TRANSIL The Transil is an avalanche diode specially designed to ) Recovery Diode c) Diode and Transi l A fast switch-off in an inductive circuit causes overvoltages and Standard protection which puts a diode in antiparallel with the inductive load (circuit b, fig.2) offers many advantages : negligible overvoltage at switch on (forward voltage of the diode) reduced space, low to speed up the current decay rate while retaining the advantages of recovery diode protection. A
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/3569-v1.htm
STMicroelectronics 02/04/1999 7.88 Kb HTM 3569-v1.htm
Transil is an avalanche diode specially designed to clamp overvoltages and dissipate power in impulsive D T Figure 2 : Relay Drive Protection by : b) Recovery Diode c) Diode and Transi l A fast switch-off 2. ELECTRONIC COMPONENTS 1) FAST DIODES AND TRANSIL Standard protection which puts a diode in switch on (forward voltage of the diode) reduced space, low price, good reliability and negligible retaining the advantages of recovery diode protection. A solution is shown in fig.2, circuit C, in which a
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/3569.htm
STMicroelectronics 20/10/2000 10.05 Kb HTM 3569.htm