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ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
TPS1100DR Texas Instruments Single P-channel Enhancement-Mode MOSFET 8-SOIC visit Texas Instruments
TPS1101DRG4 Texas Instruments Single P-channel Enhancement-Mode MOSFET 8-SOIC visit Texas Instruments

avalanche mode transistor

Catalog Datasheet MFG & Type PDF Document Tags

ZTX415

Abstract: AVALANCHE TRANSISTOR Application Note 8 Issue 2 January 1996 The ZTX415 Avalanche Mode Transistor An Introduction to Characteristics, Performance and Applications Neil Chadderton Introduction Avalanche mode , the important parameters of an avalanche mode transistor with particular reference to the ZTX415 , / high current pulse generators. The Zetex Semiconductors ZTX415 is an avalanche transistor that , inductance designs. This Application Note outlines the principle of avalanche mode operation, gives
Zetex Semiconductors
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FMMT415 AVALANCHE TRANSISTOR 67A SOT 23 6 avalanche mode transistor avalanche pulse generator NS-25

smps circuit diagram of 300W

Abstract: layout 48 VOLT 150 AMP smps Avalanche Rating Avalanche energy capability is the measure of a transistor's ability to handle energy in the drain to source avalanche breakdown mode, in which the transistor acts ideally as a high power , Avalanche Rating and the VBE junction potential decreases. For this reason, though a MOSFET transistor may , 3 SMPS Topologies and Avalanche A variety of converter topologies are used in switch mode , Transistor Selection Topology Avalanche possible? CoolMOSTM PFC Boost Converter No 600 V
Infineon Technologies
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smps circuit diagram of 300W layout 48 VOLT 150 AMP smps 48 VOLT 10 AMP smps 07n60 mosfet circuit diagrams AN-CoolMOS-04 ZVT Full bridge transformer IGBT MOS-04 2002-S

avalanche mode transistor

Abstract: CA3081 , Avalanche Rated, Dual N-Channel LittleFETTM Enhancement Mode Power M O S F E T . 3.5A, 30V, Avalanche Rated, Logic Level, Dual N-Channel LittleFETTM Enhancement Mode Power M O S F , . 3.5A, 12V, Avalanche Rated, Logic Level, Dual N-Channel LittleFETTM Enhancement Mode Power M O S F , . 3.5A/2.5A, 12V, Avalanche Rated, Logic Level,C omplementary LittleFETTM Enhancement Mode Power M O S F , . 2.5A, 12V, Avalanche Rated, Logic Level, Dual P-Channel LittleFETTM Enhancement Mode Power M O S F
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CA3081 HI5721 HI5731 HI5741 HI5780 CXD2306 HI20201

AN601

Abstract: SMP30N10 transistor. The semiconductor industry defines this ruggedness as the capability to withstand avalanche , active or passive. The first, or active mode, results when the avalanche current forces the parasitic bipolar transistor into conduction. The second, or passive mode, results when the instantaneous chip , parasitic npn bipolar transistor and causes catastrophic thermal runaway. In either case, the MOSFET is destroyed. The passive mechanism is, therefore, identified as that failure mode not directly attributed to
Temic Semiconductors
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AN601 SMP30N10 bipolar transistor tester john worman ED-29 HDL-TR-1978

5510E UIS tester

Abstract: bipolar transistor tester labelled as either active or passive. The first, or active mode, results when the avalanche current forces the parasitic bipolar transistor into conduction. The second, or passive mode, results when the , mode in the vertical MOSFET structure is offered in Figure 3. The initial avalanche current at , the critical avalanche current required to excite the parasitic bipolar transistor. Blackburn[8 , . Dunning The evolution of the power MOSFET has resulted in a very rugged transistor. The semiconductor
Temic Semiconductors
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5510E UIS tester US ARMY TRANSISTOR CROSS SILICONIX oxner siliconix an601 JC-25

SMP30N10

Abstract: MOSPOWER Design 1983 mechanisms are labelled as either active or passive. The first, or active mode, results when the avalanche current forces the parasitic bipolar transistor into conduction. The second, or passive mode, results , mode not directly attributed to avalanche currents. Whenever current through an inductance is , avalanche. * The Thermal Effect - The "Passive" Mode. During UIS, as the MOSFET is subjected to , . Dunning The evolution of the power MOSFET has resulted in a very rugged transistor. The semiconductor
Temic Semiconductors
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MOSPOWER Design 1983 uis test MOSPOWER Design Data Book 1983 siliconix FET DESIGN

70572

Abstract: bipolar transistor tester either active or passive. The first, or active mode, results when the avalanche current forces the parasitic bipolar transistor into conduction. The second, or passive mode, results when the instantaneous , , IORp+, activates this bipolar transistor.[4,5,6] The accepted model representing this failure mode in , The evolution of the power MOSFET has resulted in a very rugged transistor. The semiconductor industry defines this ruggedness as the capability to withstand avalanche currents when subjected to
Vishay Siliconix
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70572 RPKC

AVALANCHE TRANSISTOR

Abstract: FMMT417 Design Note 24 Issue 1 October 1995 The ZTX413 Avalanche Transistor Low Voltage Operation up , range of avalanche mode transistors. The ZTX413, in common with the ZTX415 through-hole device, and , mode operation. They can thereby offer advantages such as reliability and reproducible avalanche , resistance. +100V CURRENT SENSE 51 ZTX413 4n7 Figure 2 Avalanche Transistor Test Circuit , Voltage. DN24-1 DN24 - 2 Design Note 24 Issue 1 October 1995 The ZTX413 Avalanche Transistor
Zetex Semiconductors
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FMMT417 4N7 CAPACITOR disc capacitor 4n7, DIODE 4N7 ed14 diode napoli ED-14

SE135N

Abstract: SE110N Low V CE(sat) · High hFE Transistor 18 18 17 Transistors for Switch Mode Power Supply (For AC 80 to 130V input) 17 Low V CE (sat) · High hFE Transistor 18 17 Transistors for Switch Mode Power , Avalanche Diode with Built-in Thyristor Surface Mount Transistor Surface Mount Switching Type IC , 51 51 51 51 51 5 3-Output IC Regulator 5 5 Sink Drive Transistor Array with Avalanche Diode , Sink Drive Transistor Array with Avalanche Diode 20 Source Drive Transistor Array (General Purpose
Allegro MicroSystems
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STR83159 SE135N SE110N UX-C2B SE140N SE130N 2SA1186 2SA1215 2SA1216 2SA1262 2SA1294 2SA1295

A4032

Abstract: SE110N input) 17 17 17 18 Low VcE(sat)-High hFE Transistor 18 18 Transistors for Switch Mode Power Supply (For , Transistor Transistors for Audio Am plifier (Single Emitter) Transistors for Switch Mode Power Supply (For AC , Regulator 5 5 Sink Drive Transistor Array with Avalanche Diode Sink Drive Transistor Array (General Purpose , Mount) Triacs Sink Drive Transistor Array with Avalanche Diode 38 38 41 40 33 MOSFET Array (Stepper , Transistor Array with Avalanche Diode Source Drive Transistor Array (General Purpose) Sink Drive Transistor
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A4032 SE090N SE005N high hfe transistor SLA7022M FMQG5FM 2SA1303 2SA1386 2SA1488 2SA1492 2SA1493 2SA1494

5B SMD TRANSISTOR

Abstract: SMD transistor 5c permissible junction temperature is 150 °C. The transistor is operated in avalanche mode with a pulse current , temperature of the transistor must not be exceeded here. If turn-off takes place in hard mode with an , the new S-FETs, in which avalanche energy released in the transistor coincides with active zener , semiconductor depend on its area operated in avalanche mode. If the voltage is limited by active zener , excellent quality. A homogeneous cell design combined with spacer technology ensures high avalanche
Siemens
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5B SMD TRANSISTOR SMD transistor 5c smd transistor GY transistor 5c smd package 5B smd transistor data transistor smd 5B P-DSO-28

MOSFET TRANSISTOR SMD MARKING CODE nh

Abstract: catalog mosfet Transistor smd enhancement mode field-effect power transistor in a plastic envelope using 'trench' technology. The device has , specification Dual N-channel enhancement mode TrenchMOSTM transistor THERMAL RESISTANCES SYMBOL PARAMETER , enhancement mode TrenchMOSTM transistor REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS Tj = 25°C, per , N-channel enhancement mode TrenchMOSTM transistor PHN203 Drain Current, ID (A) 10 9 8 7 6 5 4 3 2 1 0 , specification Dual N-channel enhancement mode TrenchMOSTM transistor PHN203 1E-01 Sub-Threshold
Philips Semiconductors
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MOSFET TRANSISTOR SMD MARKING CODE nh catalog mosfet Transistor smd MOSFET TRANSISTOR SMD MARKING CODE A1 mosfet so8 smd sot96-1

varistor 472 SUS

Abstract: Transient Voltage Suppression Devices, Harris failure mode is a function of avalanche current and junction temperature and not energy related , parasitic bipolar transistor never turns on. The failure is thermally induced. At the start of avalanche , WITH PARASITIC BIPOLAR TRANSISTOR When a unit is in avalanche, the bipolar transistor is in a VCER , avalanche failure resistant. Most semiconductor devices are intolerant of voltage transients in excess of their breakdown rating. Avalanche capable devices are designed to be robust. The Harris MEGAFET
Harris Semiconductor
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AN9321 SSD-450 RFP22N10 varistor 472 SUS Transient Voltage Suppression Devices, Harris 355a transistor landis rpf22n10

APT9402

Abstract: amid mosfet mode results from forward biasing the base emitter junction of the parasitic NPN transistor, turning , in a repetitive avalanche mode and would eliminate necessary components such as snubbers, transient , the repetitive avalanche mode as no wear out mechanism has been identified. Avalanche Failure , Parasitic NPN Transistor too large or the avalanche current high enough the P-N junction will become , device to survive operation in the avalanche mode at a specified current and junction temperature. The
Advanced Power Technology
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APT9402 APT5025BN APT5025BNR amid mosfet amid AVALANCHE apt5025 MOSFET ESD Rated

bsp100

Abstract: SC18 DESCRIPTION N-channel enhancement mode field-effect transistor in a plastic envelope using 'trench' , TrenchMOSTM transistor BSP100 AVALANCHE ENERGY LIMITING VALUES Limiting values in accordance with the , enhancement mode TrenchMOSTM transistor BSP100 Transconductance, gfs (S) 6 Drain Current, ID (A , Product specification N-channel enhancement mode TrenchMOSTM transistor BSP100 PRINTED CIRCUIT , enhancement mode TrenchMOSTM transistor BSP100 MECHANICAL DATA Plastic surface mounted package
Philips Semiconductors
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SC18

irf740 switching 3 phase motor driver

Abstract: IRF510 SEC mosfet . Avalanche energy injection. (Referred to in the text as Mode 1.) 2. Diode recovery dv/dt. (Referred to in , avalanche injection, this failure mode cannot be directly linked to the DC safe operating area (SOA) curves , alternating sections of 'p' and `n' materials: precisely the composition of a bipolar (npn) transistor. The , circuit in detail. What we have is an identifiable parasitic bipolar junction transistor (PBJT) intrinsic to the MOSFET cell structure. If this cellular transistor is turned on in any of the hundreds of
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irf740 switching 3 phase motor driver IRF510 SEC mosfet h-bridge power MOSFET IRF740 working of mosfet IRF450 snubber circuit for mosfet push pull IRF540 complementary SEL84-005

Zener Diode 3v 400mW

Abstract: transistor bc548b RF Wideband Transistor Selection Guide 791-180 UMA1021M Low-Voltage Frequency Synthesizer for , debug mode · Source level debugger for C, PLM and assembler · DOS and Windows software · 24 pin DIP , operation modes. Counter timers have independently programmable clock source and dual mode. All I/Os are , a separate programmable baud-rate generator. All UARTs have wake-up mode for multi-drop support , drive circuit would allow a lower voltage transistor, Q1, and capacitor, Cd, to be used. Base-emitter
Philips Semiconductors
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Zener Diode 3v 400mW transistor bc548b BC107 transistor TRANSISTOR bc108 bc547 cross reference chart Transistor BC109 DS750 87C750 80C51 PZ3032-12A44 BUK101-50GS BUW12AF

AVALANCHE TRANSISTOR

Abstract: MOSFET Application Hints the pulse current avalanche mode for 400 µs. This gives a maximum junction temperature of , /W = 28 °C Avalanche mode: Ptot = 8 × 0.2 = 12.8 W 2 t = 400 µs Rth = 1 K/W Tges = 28 °C + , arise, which drive the power switch into avalanche breakdown. For this situation it should be noted that the semiconductor may only be operated in breakdown mode under the conditions specified in the data book. When this happens, the avalanche energy, permissible power loss and the defined current
Siemens
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MOSFET Application Hints
Abstract: DESCRIPTION Dual N-channel enhancement mode field-effect transistor in a plastic envelope using â'™trenchâ , Philips Semiconductors Dual N-channel enhancement mode TrenchMOSâ"¢ transistor PHN210 THERMAL , N-channel enhancement mode TrenchMOSâ"¢ transistor PHN210 REVERSE DIODE LIMITING VALUES AND , Semiconductors Dual N-channel enhancement mode TrenchMOSâ"¢ transistor PHN210 Drain Current, ID (A , Dual N-channel enhancement mode TrenchMOSâ"¢ transistor PHN210 Source-Drain Diode Current, IF (A -
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076E03S MS-012AA

MS-012AA

Abstract: PHN210 N-channel enhancement mode field-effect transistor in a plastic envelope using 'trench' technology. s2 , N-channel enhancement mode TrenchMOSTM transistor PHN210 REVERSE DIODE LIMITING VALUES AND , enhancement mode TrenchMOSTM transistor PHN210 Transconductance, gfs (S) 6 Drain Current, ID (A , Product specification Dual N-channel enhancement mode TrenchMOSTM transistor PHN210 MECHANICAL , specification Dual N-channel enhancement mode TrenchMOSTM transistor PHN210 DEFINITIONS Data sheet
Philips Semiconductors
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