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SN7476J Texas Instruments IC TTL/H/L SERIES, DUAL NEGATIVE EDGE TRIGGERED J-K FLIP-FLOP, COMPLEMENTARY OUTPUT, CDIP16, FF/Latch visit Texas Instruments
SN7476J-00 Texas Instruments IC TTL/H/L SERIES, DUAL NEGATIVE EDGE TRIGGERED J-K FLIP-FLOP, COMPLEMENTARY OUTPUT, CDIP16, FF/Latch visit Texas Instruments
SN7476N-00 Texas Instruments TTL/H/L SERIES, DUAL NEGATIVE EDGE TRIGGERED J-K FLIP-FLOP, COMPLEMENTARY OUTPUT, PDIP16 visit Texas Instruments
SN7476N-10 Texas Instruments TTL/H/L SERIES, DUAL NEGATIVE EDGE TRIGGERED J-K FLIP-FLOP, COMPLEMENTARY OUTPUT, PDIP16 visit Texas Instruments
ADCS7476AIMFX/NOPB Texas Instruments 1MSPS, 12-/10-/8-Bit A/D Converters in SOT-23 & LLP 6-SOT-23 -40 to 125 visit Texas Instruments Buy
ADCS7476AIMF/NOPB Texas Instruments 1MSPS, 12-/10-/8-Bit A/D Converters in SOT-23 & LLP 6-SOT-23 -40 to 125 visit Texas Instruments Buy

applications IC 7476

Catalog Datasheet MFG & Type PDF Document Tags

IC 7476

Abstract: features of ic 7476 FOR HIGH RELIABILITY APPLICATIONS 1.02 ± 0.10 (0.04 ± 0.004) 0.31 rad. (0.012) MECHANICAL DATA , PAD 3 = Collector ABSOLUTE MAXIMUM RATINGS TCASE = 25°C unless otherwise stated VCBO VCEO VEBO IC , : sales@semelab.co.uk Website: http://www.semelab.co.uk DOC 7476, ISSUE 1 2N2857XCSM ELECTRICAL CHARACTERISTICS , Saturation Voltage DC Current Gain Collector to Emitter Cut-Off Current Noise Figure Test Conditions IC = 1µA IC = 3mA IE = 10µA VCB = 15V IE = 0 IC = 10mA IC = 10mA VCE = 1V IC = 3mA VCB = 16V VCE = 6V f =
Semelab
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IC 7476 features of ic 7476 applications IC 7476 of Ic 7476 transistor 076 7476 ic 450MH 100MH

IC 7476

Abstract: INTERNAL DIAGRAM OF IC 7476 Analog Inputs and 2 Analog Outputs AUTOMATIONWORX Data Sheet 7476_en_02 © PHOENIX CONTACT - 10/2007 , /5/EU. This device contains: FCC ID: PVH071902 IC: 5325A-0719X This device complies with Part , disregard of information contained in this data sheet. 7476_en_02 PHOENIX CONTACT 2 ILB BT , 7476_en_02 MODE 16 dBm 12 dBm 8 dBm 4 dBm 0 dBm DIP switches for setting the , antenna cable are available on request. 7476_en_02 PHOENIX CONTACT 4 ILB BT ADIO 2/2/16/16
Phoenix Contact
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INTERNAL DIAGRAM OF IC 7476 IC 7476 function circuit diagram with IC 7476 7476 Connection diagram assignment on bluetooth of IC 7476 in file

m1g4

Abstract: DIN IEC 747-6 Kritische Spannungssteilheit critical rate of rise of off-state voltage Tvj = Tvj , °C IC Periodischer Kollektor-Spitzenstrom repetitive peak collektor current t p = 1ms ICRM , °C, iGM = 0,6A, diG/dt = 0,6A/µs Tvj = Tvj max DIN IEC 747-6 Freiwerdezeit circuit commutated , collector-emitter saturation voltage Tvj = 25°C, iC = 50A, vGE = 15V vCE sat Gate-Emitter-Schwellspannung gate-emitter threshold voltage Tvj = 25°C, iC = 2mA, vGE = vCE vGE(TO) Tvj = 25°C, f0 = 1MHz, Cies
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m1g4

B6HK

Abstract: thyristor TD 45 N 1200 = 10ms Kritische Stromsteilheit critical rate of rise of on-state current DIN IEC 747-6 , voltage V CES Kollektor-Dauergleichstrom DC-collector current TC = 80°C IC Periodischer , vD = VDRM, vR = VRRM Zündverzug gate controlled delay time DIN IEC 747-6 Tvj = 25°C, iGM = 0 , Tvj = 25°C, iC = 50A, vGE = 15V Gate-Emitter-Schwellspannung gate-emitter threshold voltage Tvj = 25°C, iC = 2mA, vGE = vCE vGE(TO) Tvj = 25°C, f0 = 1MHz, Cies 3,3 iCES 10 500
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B6HK thyristor TD 45 N 1200

7476 IC data

Abstract: 1200V 100 A THYRISTOR DIN IEC 747-6 Kritische Spannungssteilheit critical rate of rise of off-state voltage Tvj = Tvj , °C IC Periodischer Kollektor-Spitzenstrom repetitive peak collektor current t p = 1ms ICRM , °C, iGM = 0,6A, diG/dt = 0,6A/µs Tvj = Tvj max DIN IEC 747-6 Freiwerdezeit circuit commutated , collector-emitter saturation voltage Tvj = 25°C, iC = 70A, vGE = 15V vCE sat Gate-Emitter-Schwellspannung gate-emitter threshold voltage Tvj = 25°C, iC = 3mA, vGE = vCE vGE(TO) Tvj = 25°C, f0 = 1MHz, Cies
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7476 IC data 1200V 100 A THYRISTOR CHopper DC
Abstract: DIN IEC 747-6 Kritische Spannungssteilheit critical rate of rise of off-state voltage Tvj = Tvj , 80°C IC Periodischer Kollektor-Spitzenstrom repetitive peak collektor current t p = 1ms , circuit commutated turn-off time vRM = 100V, VDM = 0,67 VDRM Tvj = Tvj max DIN IEC 747-6 Tvj = , Tvj = 25°C, iC = 70A, vGE = 15V vCE sat Gate-Emitter-Schwellspannung gate-emitter threshold voltage Tvj = 25°C, iC = 3mA, vGE = vCE vGE(TO) Tvj = 25°C, f0 = 1MHz, Cies 5,1 iCES Eupec
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Abstract: °C, tp = 10ms Kritische Stromsteilheit critical rate of rise of on-state current DIN IEC 747-6 , collector-emitter voltage V CES Kollektor-Dauergleichstrom DC-collector current TC = 80°C IC , VDRM, vR = VRRM Zündverzug gate controlled delay time DIN IEC 747-6 Tvj = 25°C, iGM = 0,6A , 25°C, iC = 50A, vGE = 15V Gate-Emitter-Schwellspannung gate-emitter threshold voltage Tvj = 25°C, iC = 2mA, vGE = vCE vGE(TO) Tvj = 25°C, f0 = 1MHz, Cies 3,3 iCES 10 500 Eupec
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Abstract: request 1) Werte nach DIN IEC 747-6 (ohne vorausgehende Kommutierung)/Values to DIN IEC 747-6 (without , Rfhn I'C/W] 0,00114 7" [SI 0,0014 l+,n pC/Wl 0,00106 7, [SI 0,0013 0,00106 0.0013 0,0077 44 0 , applications, please notify. Please note, that for any such applications we urgently recommend - to perform Eupec
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T1052

T1052

Abstract: applications IC 7476 /Delivery for larger quantities on request 1) Werte nach DIN IEC 747-6 (ohne vorausgehende Kommutierung)/Values to DIN IEC 747-6 (without prior commutation) 2) Unmittelbar nach der Freiwerdezeit, vgl , beidsellg Rfhn I'C/W] 0,00114 0,00224 0,00487 0,00549 0,00326 Iwa-sided 7" [SI 0,015 , applications, in health or live endangering or life support applications, please notify. Please note, that for any such applications we urgently recommend - to perform joint Risk and Quality Assessments; - the
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Abstract: erfragen/Delivery for larger quantities on request 1) Werte nach DIN IEC 747-6 (ohne vorausgehende Kommutierung)/Values to DIN IEC 747-6 (without prior commutation) 2) Unmittelbar nach der Freiwerdezeit, vgl , side cooling BildiFig 19 Steuercharakteristik mit ZündberelchenIGate vo = f(ic), Vo = 6 V , you. Should you intend to use the Product in health or live endangering or life support applications, please notify. Please note, that for any such applications we urgently recommend - to perform joint Eupec
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Abstract: DIN IEC 747-6 Kritische Spannungssteilheit critical rate of rise of off-state voltage Tvj = Tvj , 80°C IC Periodischer Kollektor-Spitzenstrom repetitive peak collektor current t p = 1ms , delay time Tvj = 25°C, iGM = 0,6A, diG/dt = 0,6A/µs Tvj = Tvj max DIN IEC 747-6 , ` Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage Tvj = 25°C, iC = 70A, vGE = 15V vCE sat Gate-Emitter-Schwellspannung gate-emitter threshold voltage Tvj = 25°C, iC = 3mA, vGE Eupec
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Abstract: connection torque typ. incl. screws Stvidart*: ON/EC 747-6 120 60 20 10 W W W V -40.+140 , '¢ International standard package â'¢ Gate-cathode twin pins Applications â'¢ Motor control â'¢ Power converter , < < 760 275 (iC A Vqt Vd=6V; TVi= 25°C TV J=-40°C V0=6V; TV 25°C J= TV J -
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MCC220 MCD220 MCC220-08 MCC220-12 MCC220-14 MCC220-16

sn74l76

Abstract: sn74l75 SN 7476. SN 74L75. SN 74LS7B . . . J O R N P A C K A G E (T O P V IE W ) ENABLE 1-2 QUO 3g 30 40 , various 16-pin packages. For higher component density applications, the '77, 'L77, and 'L S 7 7 4 , F IC E BO X S O IS · D A CCA ». TBX A B 7 * 3 2 2 7. « ' TYPES SMSm . SHM77. SN , b le : R e q >*17 k f t R e q * 4 .2 k f t * 7 6 ,7 7 T Y P IC A L O F A L L O U TP U T S 'L 7 5 , *L77 T Y P IC A L O F A L L O U TP U TS *LS76. *LS77 7-36 T e x a s In s t r u m e
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sn74l76 sn74l75 64LS7 647s sn74ls75 Sn6477 SN5475 SNS477 SN54L75 SNS4L77 SNS4LS75 SN64LS77
Abstract: torque Term inal con nectio n to rq ue typ. incl. screw s S tld w fl*: CXN/1EC 747-6 12 A/JIS , '¢ D irect c o p p e r b onded A l2 3-ceram ic 0 b ase plate â'¢ Isolation vo lta ge 2500 V (RM S , -cath od e tw in p in s at version 1B Applications â'¢ M o to r control â'¢ P ow er converter â -
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MCC44 MCD44 MCC44-06 MCC44-08 MCC44-12 MCC44-18
Abstract: incl. screw s Stvidvt)«: DIN/IEC 747-6 16 10 5 0.5 10 W W W V -40.+125 125 , assivated c h ip s â'¢ D irect c o p p e r b o nd ed A l20 3-ceram ic b ase plate â'¢ Isolation voltage , A A â'¢ G ate -cath od e tw in p in s at version 1B Applications â'¢ M o to r control â'¢ P ow e -
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MCC56 MCD56 MCC56-06 MCC56-08 MCC56-12 MCC56-14

23E16

Abstract: 2SC5004 OUTLINE DIMENSIONS (Units in mm) · HIGH fT: 5 GHz TYP at VCE = 5 V , IC = 5 mA, f = 1 GHz PACKAGE , UHF Mixer and oscillator applications. The 3 pin ultra super mini mold package makes this device , Emitter Cutoff Current at VEB = 1 V, IC = 0 µA 0.1 Collector Saturation Voltage at hFE = 10, IC = 5 mA V VCE(sat) hFE fT DC Current Gain at VCE = 5 V, IC = 5 mA2 Gain Bandwidth at VCE = 5 V, IC = 5 mA 0.5 60 GHz CRE Feedback Capacitance at VCB = 5 V, IE = 0, f = 1 MHz3
California Eastern Laboratories
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NE58219 2SC5004 23E16 NE58219-T1 S21E br 903

MJE 13905

Abstract: 2SC5004 DIMENSIONS (Units in mm) · HIGH fT: 5 GHz TYP at VCE = 5 V , IC = 5 mA, f = 1 GHz PACKAGE OUTLINE 19 , transistor designed for UHF Mixer and oscillator applications. The 3 pin ultra super mini mold package , 0.1 IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 µA 0.1 Collector Saturation Voltage at hFE = 10, IC = 5 mA V VCE(sat) hFE fT DC Current Gain at VCE = 5 V, IC = 5 mA2 Gain Bandwidth at VCE = 5 V, IC = 5 mA 0.5 60 GHz CRE Feedback Capacitance at VCB = 5 V, IE = 0, f =
NEC
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MJE 13905 FREE MM 5402 SCHEMATIC f 2630 152.01

rca thyristor manual

Abstract: diode lt 341 applications each using a different teiminology tor circuit connection, terms, definitions and symbols , thyristor covered by IEC 747-6. These differences necessitate the modification of some characteristic , 747-6:1983, Semiconductor devices - Discrete devices and integrated circuits · Part 6: Thyristors , , VG. APPLICATIONS INFORMATION electrical characteristics The electrical characteristics of a , protectors In 1986 an IC version was proposed (A 90 V Switching Regulator and Lightning Protection Chip Set
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1W1000 rca thyristor manual diode lt 341 RG35A B3612 RLM88 T-001089 R3612 PBA3357/3 TCM1060

74LS259N

Abstract: 74LS259M DM74LS259 8-Bit Addressable March 1998 F /M R C H II_ D tm S E M IC O N D U C T O R , general purpose storage applications in digital system s. S pecific uses include w orking registers , Fairchild 9334 Expandable fo r N-bit applications Four d istinct functional m odes Typical propagation , F a irch ild S e m ic o n d u c to r C o rp o ra tio n D S006418 w w w .fa irch ild se m i.co , TYP 0 022 (0.5591MAX TYP r . I 0.015 (0.381) 0.G06 (0.152) MIN TYP C eram ic Leadiess
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74LS259N 74LS259M 54LS259J 74LS259W 54LS259W 54LS259/BEAJC

SP SOT23-5

Abstract: SPUSB1BJT Electrostatic Discharge (ESD) continues to increase. Whether at the IC foundry, the board assembler, or in the , the foundry/assembly house events, and can destroy the ICs. To enhance survivability of the IC to , ) with very low capacitance, leakage current and clamp voltage. For more robust applications, silicon , SCR/Rail Clamp Diodes PulseGuard® Suppressors Typical Applications Speaker Microphone Audio Headset , the relationship between Data Rates (Protocol), Applications, and ESD suppressors that can be
Littelfuse
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SP SOT23-5 SPUSB1BJT EC333-C
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