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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: voltage, and higher frequency applications. The Microsemi AGT (Anode Gate Thyristor) device is a thyristor providing the reverse electrical switching of the SCR on a common mounting plane. The AGT , WWW. Microsemi . C O M MicroNote 603 Anode Gate Thyristors and High Current AC Applications , COLORADO DIVISION High Current AC Thyristor Applications By Steve McKelvie The common thyristor solution used in higher current ac switching is two isolated SCR's. The added hardware and ... | Original |
1 pages, |
Thyristor Device Data thyristor scr triac 50a 05002GOF 050R02GOF T065 SIMPLE SCR 50A 1200V SCR TRIGGER circuit High power SCR heat sink of scr 1200v scr triac 1200V AGT Thyristor 050R02GOF abstract |
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| Abstract: current required to switch a thyristor to the on-state; usuall measured at 25'C. Vgt(V) Gate trigger voltage The voltage required to swith a thyristor to the on-state measured at 25^. Non-trigger gate , to turn on a power thyristor measured at a specified current from a point on the gate pulse front, to , and symbols used Thyristor Symbol Term Definition ' Vrrm(V). . Repetitive Peak rererse Voltage The maximum reverse instantaneous recurrent voltage at which a thyristor will operate in the switching ... | OCR Scan |
2 pages, |
THYRISTOR 1200 measure thyristor thyristor sanrex thyristor D sanrex THYRISTOR PULSE thyristor power thyristor measurement anode gate thyristor DGGD13G DGGD13G abstract |
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| Abstract: the AT404 AT404 is based on a controlled current source connected between anode and gate of the thyristor , derived from the anode of the thyristor no gate drive power supply is required. It is advisable to , Gate current threshold 1.2A gate current threshold Gate current rise time at anode voltage of 100V 200V 400V 800V 1200V Peak gate current (typical) Anode - cathode current at Vp Maximum , triggered, the gate current ceases to flow because the anode voltage drops below the threshold voltage ... | Original |
2 pages, |
thyristor short circuit thyristor circuit diagram AT404 anode gate thyristor 2200 8135 3 phase thyristor dc drive EZYTrigger AT404-22 AT404-24 AT404 abstract |
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| Abstract: surge voltage and current, can be decreased by such filter. Anode Cathode Gate Thyristor , during the whole period when base current flows, but thyristor keeps anode current flowing even after the gate current is cut off. So, you need not supply thyristor with continuous gate current TDK 3-phase line filter and internal diagram i Thyristor (SCR) Anode i E vT E v Gate , anode, however, thyristor maintains off-state so far as gate current would be applied again. 2-2. ... | Original |
10 pages, |
thyristor bridge circuit SCR TRIGGER PULSE circuit snubber thyristor thyristor inverter circuit diagram thyristor short circuit ic Thyristor firing circuit HIGH VOLTAGE THYRISTOR 3 phase thyristor dc drive snubber FOR 3PHASE BRIDGE RECTIFIER fast thyristor 200A 6 thyristor driver circuit datasheet abstract |
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| Abstract: Typenbezeichnungen Type designations Fully controlled Thyristor modules TT 121 N 18 K O F TT , thyristor limiting average on-state current (A), tc = 85° C phase control thyristor fast thyristor with central gate repetitive peak off-state voltage in 100 V mech. constr.: module-DCB mech. constr. , common anode special design with common cathode Diode modules dual version with 1 diode (for , special design with common anode special design with common cathode 151 N F,S 18 L K -A -K ... | Original |
1 pages, |
thyristor Tz 100 integr bridge thyristor thyristor thyristor bridge circuit ECONOPACK DD 105 N 16 L three phase fully controlled rectifier diode w3 thyristor tt 121 thyristor phase control rectifier thyristor tt 105 n 16 thyristor TT 18 N datasheet abstract |
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| Abstract: TERMINAL DESIGNATIONS (A) Anode CURRENT VOLTAGE CHARACTERISTICS IT + IG VT (G) Gate - + VG , the SCR which can be turned off with a sufficiently high pulse of reverse gate current. Diodes are , thyristor family of devices. The term thyristor defines any semiconductor switch whose bistable action , thyristor. SCHEMATIC SYMBOL AND TERMINAL DESIGNATIONS + VF - CURRENT VOLTAGE CHARACTERISTIC IF (A) Anode IF Maximum Non-Repetitive Peak Reverse Voltage VRSM (K) Cathode On-State ... | Original |
1 pages, |
Vrsm diode gto GTO MODULE pow-r-blok scr SCR RECTIFIER anode gate thyristor THYRISTOR GTO GTO thyristor powerex HIGH VOLTAGE THYRISTOR SCR symbol of diode output characteristic of SCR GTO GTO thyristor thyristor family datasheet abstract |
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| Abstract: 1 4 Ã- 3 = 12 1 5 2 4 3 1 2 3 4 5 MAIN THYRISTOR: ANODE MAIN THYRISTOR: GATE MAIN AND AUX. THYRISTOR: CATHODE AUX. THYRISTOR: GATE AUX. THYRISTOR: ANODE SA SERIES APPLICATION Automatic strobe flasher FAMILY CONSTITUTION Guide No. (ASA100 ASA100) Type Aux thyristor , THYRISTOR 100 (%) 103 7 5 4 3 2 GATE TRIGGER CURRENT VS. GATE TRIGGER PULSE WIDTH GATE , MITSUBISHI SEMICONDUCTOR HIGH-SPEED SWITCHING THYRISTOR ARRAY SA01, SA02, SA04, SA07 THYRISTOR ... | Original |
4 pages, |
SA120 SA07 SA01 SR1FM HIGH VOLTAGE THYRISTOR Thyristor 200a thyristor circuit thyristor equivalent capacitor 11UF SA02 capacitor 23uf SA04 10k thyristor PULSE thyristor datasheet abstract |
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| Abstract: .50mA 1 1 2 3 4 Measurement point of case temperature CATHODE ANODE GATE ANODE , L When the thyristor is turned on, the anode reactor L is used to control the rise of the , MITSUBISHI SEMICONDUCTOR HIGH-SPEED SWITCHING THYRISTOR CR3JM LOW POWER, STROBE USE , Peak gate power dissipation 3.0 W PG (AV) Average gate power dissipation 0.3 W VFGM Peak gate forward voltage 6 V VRGM Peak gate reverse voltage 6 V IFGM ... | Original |
4 pages, |
CR3AMZ Gate Turn-off Thyristor to220 cr3jm Xenon Flash 6v anode gate thyristor power thyristor measurement Thyristor to220 Xenon flash tube THYRISTOR CR3jM datasheet abstract |
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| Abstract: high 8 Epoxy disc 14 mm high 9 Epoxy disc 26 mm high Rectifier F N fast thyristor, gatecathode interdigitated fast thyristor, central gate phase control thyristor limiting repetitive peak , and retifier diode F fast thyristor and fast diode S fast thyristor with interdigitated gate and , thyristor A asymmetrically blocking thyristor 930 limiting average forward current (A) at tc= 85° C 0 , voltage) 18 3.Letter mechanical construction anode: cathode: metric thread cable metric ... | Original |
1 pages, |
TO 220 THYRISTOR FAST SWITCHING asymmetric fast turn-off thyristor EUPEC Thyristor fast diode "40 A" IGBT tail time thyristor t 500 n 1800 DISC THYRISTOR 1000 A thyristor Thyristor PIN CONFIGURATION thyristor control ic with current sense all type of thyristor datasheet abstract |
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| Abstract: symmetrically blocking thyristor A asymmetrically blocking thyristor 930 limiting average forward current (A) at tc= 85° C 2.Letter D 1809 N 32 D 1809 N K S S fast thyristor, gatecathode interdigitated fast thyristor, central gate phase control thyristor limiting repetitive peak forward and , S fast thyristor with interdigitated gate and fast diode 18 repetitive peak-off-state voltage , 18 3.Letter mechanical construction anode: cathode: metric thread cable metric thread ... | Original |
2 pages, |
ECONOPACK DISC THYRISTOR thyristor thyristor bridge circuit bridge thyristor b6 diode thyristor tt 121 thyristor TT 18 N press-pack igbt thyristor phase control rectifier thyristor t 500 n 1800 thyristor tt 500 n 16 datasheet abstract |
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| . The Powerex product line also includes a variety of Gate Commutated Thyristors (GCTs), Symmetrical Gate Commutated Thyristors (SGCTs) and Gate Turn-Off Thyristors (GTO Powerex Thyristor Appl & Tech Info \Products Thyristors PHASE CONTROL/INVERTER GRADE GCT-SGCT/GTO Powerex high power amplifying gate. All of the high power stud mount devices utilize a compression www.datasheetarchive.com/files/powerex/pages/product/thyristor.html |
Powerex | 03/07/2003 | 11.77 Kb | HTML | thyristor.html |
| .SUBCKT mcr8sn anode gate cathode PARAMS: * * Model V/dt triggering * Igt => Gate trigger current * Vgt => Gate trigger voltage * Vtm => On-state voltage *- * Library of Thyristor (SCR and Triac) models * This is a reduced version of MicroSim's Thyristor voltage. * Main conduction path Scr anode anode0 control 0 Vswitch ; controlled switch Dak1 anode0 anode2 Dakfwd OFF ; SCR is initially off Dka cathode anode0 www.datasheetarchive.com/files/on_semiconductor/simulation-models/mcr8sn.lib |
On Semiconductor | 30/03/2009 | 4.84 Kb | LIB | mcr8sn.lib |
| .subckt 2N4174 2N4174 2N4174 2N4174 anode gate cathode * "Typical" parameters X1 anode gate cathode Scr params: + Vdrm=600v Vrrm=600v Ih=10ma Vtm=1.4v Itm=15.7 + dVdt=5e7 Igt=10ma Vgt=.75v Ton=1u Toff=15u + Idrm=10u * 90-5-18 Motorola DL137 DL137 DL137 DL137, 1985 NR .ends www.datasheetarchive.com/files/spicemodels/misc/spice_model_cd/mixed part list/thyristors/2n4174.cir |
Spice Models | 29/07/2012 | 0.28 Kb | CIR | 2n4174.cir |
| .subckt 2N1595 2N1595 2N1595 2N1595 anode gate cathode * "Typical" parameters X1 anode gate cathode Scr params: + Vdrm=50v Vrrm=50v Ih=5ma Vtm=1.1v Itm=1 + dVdt=1e9 Igt=2ma Vgt=.7v Ton=0.8u Toff=10u + Idrm=10u * 90-5-18 Motorola DL137 DL137 DL137 DL137, Rev 2, 3/89 .ends www.datasheetarchive.com/files/spicemodels/misc/spice_model_cd/mixed part list/thyristors/2n1595.cir |
Spice Models | 29/07/2012 | 0.28 Kb | CIR | 2n1595.cir |
| : (Electrical) MOSFET source # gate: (Electrical) MOSFET gate # drain (Electrical) MOSFET drain # anode: (Electrical) sense-thyristor anode # cathode:(Electrical) sense-thyristor cathode # parameters: # ts: sense -7-180 # ######################################################################## element template bts282z tfet tsense tcase anode cathode drain gate source = ts, mess, package thermal_c tfet,tsense, tcase electrical anode, cathode, source, gate, drain number ts = 160 # sense } ###################################################################################### element template bts247z tfet tsense tcase anode cathode drain gate source = ts, mess, package thermal www.datasheetarchive.com/download/21047724-145150ZC/speed_tempfet_sabermodel.zip (top_level.sin) |
Infineon | 23/09/2004 | 33.94 Kb | ZIP | speed_tempfet_sabermodel.zip |
| G1 PIN CONNECTIONS 1 : Thyristor 2 Anode (A2) 2 : Thyristor 2 Gate (G2) 3 : Thyristor 1 Anode (A1) 4 : Thyristor 1 Gate (G1) FEATURES DESCRIPTION The MSS40 MSS40 MSS40 MSS40 family are constitued of two ST | THYRISTOR MODULE Datasheet THYRISTOR Document Format 3034 01/07/1995 6 Raw Text Format MSS40 MSS40 MSS40 MSS40 THYRISTOR on-state current Gate supply : I G = 400mA - di G /dt = 1A / m s 100 A/ m s T stg T j www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3034-v1.htm |
STMicroelectronics | 20/10/2000 | 8.6 Kb | HTM | 3034-v1.htm |
| G1 PIN CONNECTIONS 1 : Thyristor 2 Anode (A2) 2 : Thyristor 2 Gate (G2) 3 : Thyristor 1 Anode (A1) 4 : Thyristor 1 Gate (G1) . V DRM = V RRM UP TO 1400 V . I T(RMS) = 70 A . HIGH ST | THYRISTOR MODULE Datasheet THYRISTOR Document Format 3035 01/07/1995 6 Raw Text Format MSS50 MSS50 MSS50 MSS50 THYRISTOR for fusing tp = 10ms 1800 A 2 s dI/dt Critical rate of rise of on-state current Gate supply : I G www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3035-v1.htm |
STMicroelectronics | 20/10/2000 | 8.67 Kb | HTM | 3035-v1.htm |
| CONNECTIONS 1 : Thyristor Gate (G) 2 : Thyristor Cathode (K) 3 : Thyristor Anode/Diode Cathode (I) 4 ST | DIODE / THYRISTOR MODULE Datasheet DIODE / THYRISTOR MODULE MDS35-XXX MDS35-XXX MDS35-XXX MDS35-XXX Document Format Size Document Number Date Update Pages DIODE / THYRISTOR MODULE April 1995 ISOTOP TM (Plastic) Screw version ABSOLUTE RATINGS (limiting -state current Gate supply : I G = 800mA - di G /dt = 1A / m s 100 A/ m s T stg T j Storage www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3032-v1.htm |
STMicroelectronics | 20/10/2000 | 10.91 Kb | HTM | 3032-v1.htm |
| CONNECTIONS 1 : Thyristor Gate (G) 2 : Thyristor Cathode (K) 3 : Thyristor Anode/Diode Cathode (I) 4 ST | DIODE / THYRISTOR MODULE Datasheet DIODE / THYRISTOR MODULE MDS50-XXX MDS50-XXX MDS50-XXX MDS50-XXX Document Format Size Document Number Date Update Pages DIODE / THYRISTOR MODULE April 1995 ISOTOP TM (Plastic) Screw version ABSOLUTE RATINGS (limiting -state current Gate supply : I G = 800mA - di G /dt = 1A / m s 100 A/ m s T stg T j Storage www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3033-v1.htm |
STMicroelectronics | 20/10/2000 | 10.89 Kb | HTM | 3033-v1.htm |
| : Thyristor 2 Anode (A2) 2 : Thyristor 2 Gate (G2) 3 : Thyristor 1 Anode (A1) 4 : Thyristor 1 Gate (G1) . V ST | THYRISTOR MODULE MSS50-1200 MSS50-1200 MSS50-1200 MSS50-1200 MSS50-800 MSS50-800 MSS50-800 MSS50-800 MSS50 MSS50 MSS50 MSS50 THYRISTOR MODULE Document Number following formats: Portable Document Format and Raw Text Format MSS50 MSS50 MSS50 MSS50 THYRISTOR MODULE April Gate supply : I G = 800mA - di G /dt = 1A / m s 100 A/ m s T stg T j Storage temperature range THERMAL RESISTANCES GATE CHARACTERISTICS (maximum values) P GM = 50 W (tp = 20 m s) P G (AV) = 1 W I FGM www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3035.htm |
STMicroelectronics | 02/04/1999 | 6.55 Kb | HTM | 3035.htm |