MTFDCAE002SAJ MTFDCAE004SAJ MTFDCAE008SAJ MTFDCAE016SAJ SR-332 EN55022 EN55024 - Datasheet Archive

 

Features Embedded USB Mass Storage Drive (e230) MTFDCAE002SAJ MTFDCAE004SAJ MTFDCAE008SAJ MTFDCAE016SAJ · Capacity

 

Embedded USB Mass Storage Drive (e230) Features Embedded USB Mass Storage Drive (e230) MTFDCAE002SAJ MTFDCAE002SAJ MTFDCAE004SAJ MTFDCAE004SAJ MTFDCAE008SAJ MTFDCAE008SAJ MTFDCAE016SAJ MTFDCAE016SAJ · Capacity (unformatted)3: 2GB, 4GB, 8GB, or 16GB · Form factor ­ Standard (36.9mm x 26.6mm x 9.6mm) · Voltage: 5V ±5% · Operating temperature ­ Commercial (0°C to +70°C) ­ Industrial (­40°C to +85°C) Features · Micron® NAND Flash · Interface: Universal Serial Bus (USB) Specification, Revision 2.0 · USB support ­ USB Specification, Revisions 2.0, 1.1 ­ USB Mass Storage Class Specification, Revision 1.0 · Performance ­ Sequential READ1: 30 MB/s ­ Sequential WRITE1: 22 MB/s (2GB and 4GB); 28 MB/s (8GB and16GB) · Reliability: >1 million device hours mean time between failure (MTBF) · Endurance: useful operating life of at least 5 years under the following conditions: ­ 8760 power-on hours per year ­ Active 100% of power-on hours ­ Typical operating conditions2: 2GB module: 16 GB/day; 4GB module: 32 GB/day; 8GB module: 64 GB/day; 16GB module: 128 GB/day · Static and dynamic wear-leveling · 15-bit error correction code (ECC) · Password protection · Reliability reporting PDF: 09005aef84053f80 eusb.pdf - Rev. A 4/10 EN Notes: 1 1. Typical transfer rate measured with H2BENCH 3.6. 2. Assumes that 70% of total usable drive capacity contains static files. 3. 1GB = 1 billion bytes; formatted capacity is less. Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2010 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. Embedded USB Mass Storage Drive (e230) Features Part Numbering Information Micron's RealSSDTM embedded USB drives are available in different configurations and densities. Visit www.micron.com for a list of valid part numbers. Figure 1: Part Number Chart MT FD C AE 002 S AJ -1 Micron Technology M 1 IT ES Production Status Blank = Production Product Family ES = Engineering sample FD = Flash drive MS = Mechanical sample Drive Interface Operating Temperature Range C = USB 2.0 Blank = Commercial (0°C to +70°C) IT = Industrial (­40°C to +85°C) Drive Form Factor AE = Embedded USB: 36.9mm x 26.6mm x 9.6mm Revision 1 = 1st generation Drive Density 2 = 2nd generation 002 = 2GB 3 = 3rd generation 004 = 4GB 008 = 8GB NAND Component 016 = 16GB M = 8Gb; x8; 3.3V N = 16Gb; x8; 3.3V NAND Flash Type S = SLC Sector Size 1 = 512-byte Product Family AJ = Option J PDF: 09005aef84053f80 eusb.pdf - Rev. A 4/10 EN 2 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2010 Micron Technology, Inc. All rights reserved. Embedded USB Mass Storage Drive (e230) General Description General Description Micron RealSSDTM embedded universal serial bus (USB) mass storage drives provide 2GB, 4GB, 8GB, or 16GB of USB 2.0-compatible memory storage in a small form factor. The embedded USB drive is an ideal solution for applications that require low cost and high reliability. Typical applications include PC caching and boot drives for embedded computing, server, and networking systems. High performance, reliability, and easy implementation make Micron RealSSD embedded USBs an ideal storage solution. To consistently deliver the best possible performance, the embedded USB uses only SLC NAND Flash, and all densities use two x8 NAND channels to the controller. In addition to being fast, SLC NAND Flash offers solid reliability, coupled with ECC and wear leveling. The USB system interface is widely available in many system designs and is easy to implement, enabling rapid time to market. The embedded USB consists of two TSOP-packaged Micron NAND Flash components, a USB controller, and a 10-pin USB connector on a PCB. Different densities are available depending on the number of die in each package and the density of each NAND Flash die. The drive operates at 5V ±5%. It uses industry-standard 10-pin connectors and supports USB Specification, Revision 2.0. It is also backward compatible with Revision 1.1 and can be used with operating systems that support USB Mass Storage Class Specification, Revision 1.0. Figure 2: Functional Block Diagram USB protocol USB connector NAND data bus Channel 1 USB controller Micron NAND Flash NAND command Channel 1 NAND data bus Channel 2 Micron NAND Flash Table 1: Nominal Package Dimensions, Density, and Weight Value Unit Height 9.6 mm Width 26.6 mm Length 36.9 mm Density 1, 2, 4, 8 GB 4.5 g Unit weight PDF: 09005aef84053f80 eusb.pdf - Rev. A 4/10 EN 3 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2010 Micron Technology, Inc. All rights reserved. Embedded USB Mass Storage Drive (e230) General Description Figure 3: Pin Assignments: 2 x 5 Connector 9 Key 7 GND 5 USB data (+) 3 USB data (­) 1 Vcc (+5V) 1 Vcc (+5V) 3 USB data (­) 5 USB data (+) 7 GND 9 Key NC NC NC NC NC NC NC NC NC NC 10 8 6 4 2 2 4 6 8 10 Top view (through PCB) Note: Bottom view 1. Diagram not to scale. Table 2: Signal/Pin Descriptions Symbol USB data (+), USB data (­) Type I/O Function Data inputs/outputs: The bidirectional I/Os transfer address, data, and instruction information. Data is output only during READ operations; at other times the I/Os are inputs. VCC Supply VCC power supply pin. VSS Supply VSS ground connection NC ­ No connect: NC pins are not internally connected. These pins can be driven or left floating. Key ­ This pin is keyed. PDF: 09005aef84053f80 eusb.pdf - Rev. A 4/10 EN 4 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2010 Micron Technology, Inc. All rights reserved. Embedded USB Mass Storage Drive (e230) Error Management Error Management The RealSSDTM embedded USB incorporates advanced technology for defect and error management. It uses various combinations of hardware-based error correction algorithms and firmware-based wear-leveling algorithms. Over the life of the drive, uncorrectable errors may occur. An uncorrectable error is defined as data that is reported as successfully programmed to the drive, but when it is read out of the drive, the data differs from what was programmed. See the Uncorrectable Bit Error Rate Table. The mean time between failures (MTBF) can be predicted based on component reliability data obtained by following the methods referenced in the Telecordia SR-332 SR-332 reliability prediction procedures for electronic equipment. Table 3: System Reliability Density MTFB (Operating Hours) 2­16GB >1 million device hours Table 4: Uncorrectable Bit Error Rate Uncorrectable Bit Error Rate (BER)1