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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: 1.8 - Gain GV PIN=-40dBm RL=50 f=1MHz 18 19 - dB -3dB High Frequency , , RL =50 Gain(dB) High Frequency Cut-off(GHz) 19.5 1.18 1.17 19.0 1.16 18.5 1.15 , single power supply · 19 dB typical gain · 1.2 GHz typical 3 dB-cutoff-frequency · On-chip matching to , typically specifies a small signal gain of 19 dB (Rs = RL = 50 ) with a 3 dB-cutoff-frequency of 1.2 GHz. , ) Vamp PIN=-40dBm f3Bm PIN=-40dBm RL=50 RL=50 F0311018S F0311018S 1GHz Limiting Amplifier ... | Original |
12 pages, |
Frequency Generator 1GHz F0311018S F0311018S abstract |
| Abstract: 100 MHz 13.5 dB 12.3 dB 12.3 dB Typ Gain @ 1GHz 12.5 dB 12.1 dB 12.1 dB Typ , Features Frequency Range Typ Gain @ 6 GHz 2.5 dB 8.9 dB 10.0 dB Min Gain @ 2 GHz 8.5 dB , much flatter gain over a given frequency range than the MAR-7SM, which is specified only up to 2 GHz. Typical flatness of the ERA-1SM up to 2 GHz is -0.5 dB and the MAR-7SM is -2.5 dB. Above 2 GHz, the gain , , when operated at 30 mA the ERA-1SM offers a much larger frequency range, much better gain flatness, a ... | Original |
2 pages, |
MAR-7SM amplifier gain 36 dB frequency 1GHz ERA-1SM datasheet abstract |
| Abstract: 50 Ohms. Operating Frequency: 0.05 to 6.0 GHz 0.8 dB, typ. Noise Figure Gain 20 dB, typ. IP3 +36 dBm, typ. POUT (at 1dB) +20 dBm, typ. DC Current (at 3V) 80 , environment without any external matching Ultra Low Noise: 0.8 dB NF at 1GHz High IP3: Combining Low Noise and High IP3 makes this MMIC amplifier ideal for Low Noise +36 dBm IP3 at 1GHz Receiver , New Product Announcement! Ultra Low Noise MMIC Amplifier 50 PMA-545 PMA-545+ 0.05 to 6 GHz Click ... | Original |
1 pages, |
PMA-545 datasheet abstract |
| Abstract: 50 Ohms. Operating Frequency: 0.05 to 6.0 GHz 0.8 dB, typ. Noise Figure Gain 20 dB, typ. IP3 +36 dBm, typ. POUT (at 1dB) +20 dBm, typ. DC Current (at 3V) 80 , environment without any external matching Ultra Low Noise: 0.8 dB NF at 1GHz High IP3: Combining Low Noise and High IP3 makes this MMIC amplifier ideal for Low Noise +36 dBm IP3 at 1GHz Receiver , New Product Announcement! Ultra Low Noise MMIC Amplifier 50 PMA-545 PMA-545+ 0.05 to 6 GHz The ... | Original |
1 pages, |
amplifier gain 36 dB frequency 1GHz PMA-545 datasheet abstract |
| Abstract: 4. Gain variation vs frequency 2500 MHz 17 19 dB ±2 dB ±3 dBpp 20 , Wideband Power Amplifier RFW2500H10-28 RFW2500H10-28 Product Features Application · GaN on SiC Broadband High Power Amplifier · 20MHz to 2500MHz Operation Bandwidth · Small Signal Gain 17dB typical . , Wideband Power Amplifier RFW2500H10-28 RFW2500H10-28 RFW2500H10-28 RFW2500H10-28 Typical Performance @ 25 Frequency (MHz) 20 , Gain (dB) 18.024 17.539 17.691 18.209 18.699 18.715 18.062 16.715 15.198 15.261 15.446 ... | Original |
3 pages, |
DP-34 RFW2500H10-28 RFW2500H10-28 abstract |
| Abstract: Typical Frequency MHz 20 500 1000 S21 - Gain dB 19 19 20 S11 Input , Package : DP-27 DP-27 Description The RFC1G18H4- RFC1G18H4- 24 is specifically designed for up to 1GHz in frequency as , 1000 Gain @1000MHz (dB) 18.0 19.0 - Gain Flatness @20-1000MHz (dB) - 1.5 2.0 , dBm 36 37 36 OIP3 dBm 45 45 44 Noise Figure dB 7.0 2.5 4.5 , 30 20 38 S21 Magnitude(dBm) Magnitude(dB) 10 0 S11 -10 -20 S22 36 34 ... | Original |
3 pages, |
RFC1G18H4-24 RFC1G18H4-24 abstract |
| Abstract: Units Typical Frequency MHz 20 500 1000 S21 - Gain dB 19 19 20 S11 , Package Type: DP-27 DP-27 Description The RFC1G18H4- RFC1G18H4- 24 is specifically designed for up to 1GHz in frequency , (MHz) 20 - 1000 Gain @1000MHz (dB) 18.0 19.0 - Gain Flatness @20-1000MHz (dB , P3dB dBm 36 37 36 OIP3 dBm 45 45 44 Noise Figure dB 7.0 2.5 , Wideband Amplifier RFC1G18H4-24 RFC1G18H4-24 Product Features Application · GaN MMIC · Very Low ... | Original |
3 pages, |
RFC1G18H4-24 RFC1G18H4-24 abstract |
| Abstract: 20-32GHz Downconverter MMIC CONVERSION GAIN (LSB) vs. FREQUENCY Conversion Gain (LSB) (dB) -4 fIF=1GHz fIF=2GHz -2 fIF=3GHz VDD1,2=5V, PLO=3dBm, PRF=0dBm -4 Conversion Gain (USB) (dB) -2 CONVERSION GAIN (USB) vs. FREQUENCY -6 -8 -10 -12 -14 fIF=1GHz fIF=2GHz VDD1,2=5V , frequency range. The device consists of a low noise mixer, LO amplifier, and LO frequency doubler. This , Conversion Gain G -18 -10 - dB - 5 - dB - 2 - dB Conversion Gain ... | Original |
4 pages, |
FMM5117X amplifier gain 36 dB frequency 1GHz FMM5117X abstract |
| Abstract: Type pHEMT GaAs transistors @ 12GHz NF Gain* @ Vds Id Limits Vds Id (dB) (V , SOT363 6 pin SMD package fu @1GHz Gain @ Vs BGA2709 BGA2709 BGA2712 BGA2712 BGA2715 BGA2715 BGA2716 BGA2716 BGM1013 BGM1013 , 2.9 3.6 2.7 (dB) 4.0 3.9 2.6 5.3 4.6 4.7 4.8 4.6 (dbm) 12.5 4.8 -4 11.6 14 13.8 , performance (21 mA supply current, flat 13 dB gain, minimum channel isolation of 33 dB), providing the flexibility to optimize gain performance with external amplifier in output stage. Product overview Type ... | Original |
4 pages, |
BGM1420 BGM1013 BGM10xx BGA2716 CFH703A BGA2715 innovative dro BGA2712 BGA2709 MMIC 4x2 switch BGA-2712 BGM1011 SOT343F DRO lnb datasheet abstract |
| Abstract: Description The RFC1G18H4- RFC1G18H4- 24 is specifically designed for up to 1GHz in frequency as amplifiers. This , Parameter Typical Units 1 Frequency 20 500 1000 MHz 2 S21 - Gain 19 19 , -12 -10 -14 dB 5 P3dB 36 37 35 dBm 6 OIP3 45 45 44 dBm , S-Parameters 40 30 20 38 S21 36 0 dBm Magnitude(dB) 10 S11 -10 34 -20 32 , Wideband Amplifier RFC1G18H4-24-S RFC1G18H4-24-S Product Features Application GaN MMIC Very Low Distortion ... | Original |
3 pages, |
RFC1G18H4-24-S amplifier gain 36 dB frequency 1GHz SOT-115J RFC1G18H4-24-S abstract |
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| . Typenumber POWER GAIN (dB) V CE (V) DESCRIPTION Efficiency (%) V CE (V) V CE (V) POWER GAIN (dB) Efficiency (%) LOAD POWER (W) LOAD POWER (W) Efficiency (%) LOAD POWER (W) DESCRIPTION POWER GAIN (dB) Category DESCRIPTION Category 23 =30 23 26 V base stations >28 Cellular basestations 1 GHz 26 V base stations Cellular basestations 1 GHz Typenumber www.datasheetarchive.com/files/philips/pip/bgy925_5_3-v1.html |
Philips | 14/02/2002 | 7.28 Kb | HTML | bgy925_5_3-v1.html |
| . Typenumber POWER GAIN (dB) DESCRIPTION LOAD POWER (W) V CE (V) POWER GAIN (dB V CE (V) POWER GAIN (dB) LOAD POWER (W) Category V CE (V) Efficiency base stations Cellular basestations 1 GHz 26 V base stations 26 =28 23 Cellular basestations 1 GHz 26 =30 Typenumber _4 BGY925 BGY925 BGY925 BGY925 UHF amplifier module www.datasheetarchive.com/files/philips/pip/bgy925_4-v1.html |
Philips | 14/02/2002 | 7.3 Kb | HTML | bgy925_4-v1.html |
| matched to 50 W Very wide frequency range (3.6 GHz at 3 dB bandwidth) Flat 23 dB gain (DC to 2.6 GHz at 1 dB flatness) 12.5 dBm saturated output power at 1 GHz High linearity (22 dBm OIP3 at 1 GHz) Unconditionally stable (K > 1.2). Applications Cable systems ; MMIC wideband amplifier General info Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with www.datasheetarchive.com/files/philips/pip/bga2709_2-v1.html |
Philips | 06/06/2005 | 4.16 Kb | HTML | bga2709_2-v1.html |
| DC-8 GHz Typ Gain @ 100 MHz 13.5 dB 12.3 dB 12.3 dB Typ Gain @ 1GHz 12.5 dB 12.1 dB The ERA-1SM Amplifier which is specified up to 8 GHz has a much flatter gain over a given frequency mA the ERA-1SM offers a much larger frequency range, much better gain flatness, a better 1-dB Typ 1dB Output @ 1 GHz 5.0 dBm 5.4 dBm 11.0 dBm Typ 1dB Output @ 2 GHz 4.0 dBm 5.6 d GHz is -0.5 dB and the MAR-7SM is -2.5 dB. Above 2 GHz, the gain for the MAR-7SM drops sharply while www.datasheetarchive.com/files/mini-circuits/html/an60006.htm |
Mini-Circuits | 18/02/2002 | 4.21 Kb | HTM | an60006.htm |
| LT5554 LT5554 LT5554 LT5554 Evaluation Kit 1GHz Bandwidth at all Gains 48dBm OIP3 at 200MHz, 2V P-P into Description The LT5554 LT5554 LT5554 LT5554 is a 7-bit digitally controlled programmable gain (PG) amplifier with 16dB gain , PG6). The fine transconductance amplifier 0.125dB step within 3.875dB gain control range is set via 5 the maximum overall gain to 36dB for open outputs. The internal circuitry of open output collectors Amplifiers (Op Amps) > Programmable Gain Amplifiers > LT5554 LT5554 LT5554 LT5554 www.datasheetarchive.com/files/linear/product/3819.html |
Linear | 17/09/2010 | 14.83 Kb | HTML | 3819.html |
| high gain (typ. NF=1.9dB, G=12.5dB @ 3V, 1.85GHz). Low power consumption. Frequency range 200 MHz . 2 Bm @ 4.5V, 1GHz ). Frequency range 200 MHz . 2.5 GHz. 32 K 01.96 CGY 94 Power ). Application range: 100 MHz to 3 GHz. Gain: 9 dB typ. @ 1.6 GHz. Low noise figure: 2.7 dB typ. @ 1.6 GHz .96 CGY 50 Single-stage monolithic microwave IC ( MMIC- amplifier ). Cascadable 50 W gain block. Application range: 100 MHz to 3 GHz. IP3 30 dBm typ. @ 1.8 GHz. Gain 8.5 dB typ. @ 1.8 GHz. Low noise figure www.datasheetarchive.com/files/siemens/products/35/3517.htm |
Siemens | 26/02/1998 | 9.12 Kb | HTM | 3517.htm |
| B AMPLIFIER ICs FUNCTION TYPE FREQUENCY [MHz] GAIN Typ. [dB] NF Typ. [dB] IIP3 TYPE FREQUENCY [MHz] GAIN Typ. [dB] P-1dB Typ. [dBm] CURRENT Typ. [mA] GCONT Typ 800 (Lower Local) LNA: NF=1.5dB, Gain=14dB * , IIP3=+6dBm MIX: IIP3=+7dBm, Gc=10dB, NF=6.0dB n-CDMA (1.9GHz Single Band) / W-CDMA (2.1GHz Single Band) 2.4GHz ISM Band OPERATING FREQUENCY RANGE LOSS * Typ. [dB] ISO * Typ. [dB] P-1dB * Typ. [dBm] PACKAGE www.datasheetarchive.com/files/jrc/e05/ie_sele.html |
JRC | 31/03/2002 | 32.43 Kb | HTML | ie_sele.html |
| , 1GHz ). Frequency range 200 MHz . 2.5 GHz. 32 K 01.96 CGY 81 l Tri mode . Variable gain amplifier for GSM/PCN applications. Gain Control range over 50dB. 50 Ohm input and output 11.98 CGY 121A Variable gain amplifier. (MMIC-Amplifier) for mobile communication. Typical Gain Control range over 50dB. Positive Control Voltage. 50 Ohm input and output matched. Low power .98 CGY 121B Variable gain amplifier. (MMIC-Amplifier) for mobile communication. Typical Gain Control www.datasheetarchive.com/files/infineon/products/35/3517.htm |
Infineon | 26/11/1998 | 13.55 Kb | HTM | 3517.htm |
| |2 isolation f = 1.6 GHz 31 33 ' dB f = 2.2 GHz 34 36 ' dB NF noise figure f = 1 GHz ' 4.0 4.4 dB f = 2.2 GHz ' 4.4 4.9 dB BW bandwidth at |s21|2 '3 dB below flat gain at 1 GHz 3.1 3.6 ' GHz K stability factor f gain f = 1 GHz 22.7 ' dB NF noise figure f = 1 GHz 4 ' dB PL(sat) saturated load power f = 1 GHz 12 power gain f = 100 MHz 21 22.2 23 dB f = 1 GHz 21 22.7 24 dB f = 1.8 GHz 22 23.0 24 dB f = 2.2 GHz 21 23 .2 GHz 5 7.5 ' dBm PL 1 dB load power at 1 dB gain compression; f = 1 GHz 7 8.3 ' dBm at 1 dB gain www.datasheetarchive.com/download/15609277-597103ZC/microwave_office_design_kit_rf_smal_signal_products.zip (BGA2709_2.pdf) |
NXP | 23/10/2012 | 16125.31 Kb | ZIP | microwave_office_design_kit_rf_smal_signal_products.zip |
| @ -3dB (MHz) 40 Slew Rate (V/us) 85 V S (min) (V) ±2.5 V S (max) (V) ±3.6 Rail-to-Rail N Gain A V Current Feedback Amplifiers with Enable EL5191 EL5191 EL5191 EL5191 1GHz Current Feedback Amplifier with Enable EL Feedback Amplifiers with Enable EL5367 EL5367 EL5367 EL5367 1GHz Triple Current Feedback Amplifier EL5392A EL5392A EL5392A EL5392A Triple The ISL59112 ISL59112 ISL59112 ISL59112 is a single rail-to-rail 6dB video buffer with a 3dB roll-off frequency of 40MHz and a Amplifier with Enable EL5197 EL5197 EL5197 EL5197 Single 200MHz Fixed Gain Amplifier with Enable EL5210 EL5210 EL5210 EL5210 30MHz Rail www.datasheetarchive.com/files/intersil/device_pages/device_isl59112.html |
Intersil | 07/09/2006 | 61.51 Kb | HTML | device_isl59112.html |