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LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

all type transistor equivalent

Catalog Datasheet MFG & Type PDF Document Tags

c125t

Abstract: dtc323tu PNP digital transistor (Built-in resistor type) @Equivalent circuit ROHM SMT3 EIAJ : SC-59 All , @Structure PNP digital transistor (Built-in resistor type) ROHM : UMT3 EIAJ SC-70 All terminals have , @Equivalent circuit l Structure PNP digital transistor (Built-in resistor type) @Absolute maximum , Structure NPN digital transistor (Built-in resistor type) ROHM UMT3 EIAJ SC-70 All termtnals have same , resistor type) _ J jo3_81 ROHM : UMT3 EIAJ : SC-70 All termw& have same dtmenslons 015t005 _
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DTC343TS c125t dtc323tu Ho3 501 transistor kd 2902 transistor PNP A124G transistor KD 503 DTA114TE/DTA114TUA/DTA114TKA/DTA114TSA 005-L DTA114TUA 14TKA DTA114TSA SC-72

2N5995

Abstract: transistor ac 125 equivalent with JEDEC registration RDF-3/JS-9 RDF-7. data format JS-6 RCA type 2N59953 is an epitaxial silicon n-p-n planar transistor featuring overlay emitter-electrode construction. This type features a hermetic , type is designed for stripline as well as lumped-constant circuits. This transistor is completely tested for load-mismatch capability at 175 MHz with an infinity-to-one VSWR through all phases under , Overlay Transistor For 12.5-Volt Applications in VHF Communications Equipment Features: â
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2N5995 transistor ac 125 equivalent Arco 424 rca 632 92CS-17399 50N050 175-MH VK-200-09/3B 2NS995 92SS-3763R3

mp4001

Abstract: MP4001 equivalent wire © Transistor chip (D Mold plastic Figure 1 Internal construction of a full molded type 98 , a 4 in 1 type is used independently is approx imated by the simple radiation equivalent circuit , ( case to ambient Figure 3 Simple radiation equivalent circuit using a single 4 in 1 type Thus, the , Transistor junction temperature and DC thermal resistance using a single 4 in 1 type. T ran sisto r Tn , molded type SIP 10-pin package MP4001. (a)First, Figure 3 shows the DC thermal resist ance equivalent
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MP4001 equivalent transistor equivalent table bipolar transistor NEC MP4501 mp4001 tran

transistor equivalent table chart

Abstract: 2N6256 signal design techniques are: 1. the use of two port parameters, and 2. the use of some type of equivalent circuit for the transistor. Early attempts to adapt these techniques to power amplifier design , example of this type of presentation. The data may also be presented in series equivalent form. It makes , transistor type is based on estimates of input and output impedance. Since the input and output impedances , state power amplifier design through the use of large signal transistor input and output impedances
Motorola
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AN282A 2N3948 transistor equivalent table chart 2N6256 2N5941-2 motorola rf Power Transistor LARGE SIGNAL IMPEDANCES transistor 2N5849 AN282A/D

motorola rf Power Transistor

Abstract: transistor equivalent table chart small signal design techniques are: 1. the use of two port parameters, and 2. the use of some type of equivalent circuit for the transistor. Early attempts to adapt these techniques to power amplifier design , test amplifier for a new transistor type is based on estimates of input and output impedance. Since , state power amplifier design through the use of large signal transistor input and output impedances , parameters to power amplifier design, the 2N3948 transistor was considered. A performance comparison was
Motorola
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2N5849 motorola AN548A AN548 transistor for RF amplifier rf transistors amplifier design and matching network motorola rf power

56-590-65/4A

Abstract: ferroxcube 56-590-65/4a JS-6 RDF-3/JS-9 RDF-7. RCA type 2N59963 is an epitaxial silicon n-p-n planar transistor featuring , Collector WARNING: RCA Type 2N5996 should be handled with care. The ceramic portion of this transistor , -MHz Emitter-Ballasted Overlay Transistor Silicon N-P-N Device for 12.5-Volt Applications in VHF Communications , individual ballast resistance in each of the emitter sites for stabilization. The transistor is completely tested for load mismatch capability at 175 MHz with an infinity-to-one VSWR through all phases under
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56-590-65/4A ferroxcube 56-590-65/4a Arco 423 VK20009-3B arco 404 RCA Power Transistor 4 225 V61R3

BLF6G38S-25

Abstract: transistor equivalent table transistor impedance BLF6G38-25_BLF6G38S-25 All information provided in this document is subject to , BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 3 - 11 March 2013 Product data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor for base station , -25; BLF6G38S-25 WiMAX power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 Pinning Description , ; 2 leads Version SOT608A SOT608B Type number 4. Limiting values Table 4. Limiting values In
NXP Semiconductors
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BDS3/3/4.6-4S2 BDS3/3/4.6-4S2-Z ACPR885 ACPR1980 IS-95 2002/95/EC

all type transistor equivalent

Abstract: circuit diagram for photointerrupter structure of the molded type, the type currently manufactured by Rohm, and the photodiode equivalent circuit , photodiode has a sensitivity for all electromagnetic radiation with a wavelength less than 1100 nm. I Introduction As shown in Figure 9, the structure of the photodiode can be classified as a PN type or a PIN type , (N-) N+ Anode -E T 3 P-type layer I (high resistance) N-type layer Cathode PN type Cathode PIN type Photodiode envelope structure The photodiodes are available in three types of
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all type transistor equivalent circuit diagram for photointerrupter pin details of photo transistor block diagram phototransistor HV IR block photodiode Infrared Phototransistor

pnp transistor 800v

Abstract: for Storage Tim e, " tr " stands for Fall Time. Thus, in a diffusion base type NPN transistor, the , conventional transistor designs, higher voltage w ithstanding capabilities were achieved w ith the mesa type , 6. Transistor C h a racteristics 6.1. Switching Characteristics In this section, we will look , Figure 1, the resulting base and collector waveforms are as shown in Figure 2. A transistor's switching , ultaneously. N ote that equation(25) through (27)are all dependent on hn;. As you can see, the Iife should be
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pnp transistor 800v

TRANSISTOR j412

Abstract: BLF6G38S-25 BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 01 - 18 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor for base station , BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 , earless flanged package; 2 leads Version SOT608A SOT608B Type number 4. Limiting values Table 4 , Conditions Tcase = 80 °C; PL = 25 W Type BLF6G38-25 BLF6G38S-25 Typ 1.8 1.8 Max Unit K/W K/W BLF6G38
NXP Semiconductors
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TRANSISTOR j412 J412 - TRANSISTOR SMD

7447 BCD to Seven Segment display

Abstract: SDA2014 . Open collector type driver with common anode display Data Input Vcc VCC 7448 or Equivalent , -If Figure 3. Circuits for TTL or transistor and darlington transistor Background V cc LED , Darlington Transistor TTL or Transistor The partitioning of these elements are dependent on the , . Therefore a darlington versus a single output transistor will have different current limiting resistor , 7447 or equivalent Figure 7. Common anode display with driver Vcc Figure 9. Open collector
Siemens
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XR-2203 7447 BCD to Seven Segment display SDA2014 common anode 7-segment display 7 segment with 7447 7448 7 SEGMENT DISPLAY COMMON CATHODE 7 segment display lm3915 ICM7218B ICM7218C ICM7218D ICM7218E TSC700A TSC7212A

d 331 TRANSISTOR equivalent

Abstract: RCA-40934 N-P-N VHF/UHF Transistor 12.5-Volt Type For Class C Amplifier Applications Features: â , at 470 MHz RCA-40934* is an epitaxial silicon n-p-n planar transistor that features overlay , circuits. â'¢Formerly RCA Dev. No.TA7941. RCA HF-31 Package ("Studless TO-216 AA") Type 40934 is , . COLLECTOR CURRENT: Continuous . TRANSISTOR DISSIPATION: At case temperatures up , '"Large-signal parallel equivalent input resistance vs. frequency. COLLECTOR SUPPLY VOLTAGE (Vcc)s'2 5 V CASE TEMPERATURE
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d 331 TRANSISTOR equivalent rca transistor rca 40934 RCA 40934 transistor 100 watt hf transistor 12 volt 300 watt hf transistor 12 volt RCA-2N5914 VK-200-09-3B 470-MH

smd transistor 3400

Abstract: J412 - TRANSISTOR SMD -25_BLF6G38S-25_2 Product data sheet ATC 100B or equivalent © NXP B.V. 2008. All rights reserved. Rev. 02 - 23 , transistor impedance BLF6G38-25_BLF6G38S-25_2 Product data sheet © NXP B.V. 2008. All rights , BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 02 - 23 December 2008 Product data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor for base station , Semiconductors WiMAX power LDMOS transistor 2. Pinning information Table 2. Pinning Pin
NXP Semiconductors
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smd transistor 3400 smd transistor equivalent table C5750X7R1H106M cdma QPSK modulation Walsh pilot C4532X7R1H475M RF35

sot36

Abstract: rohm surface mounted transistor series Introduction Introduction This data book provides data sheets for all surface mount transistors that are manufactured by ROHM Corporation. All transistors are manufactured with ROHM's unique , , sizes, and characteristics to satisfy our most demanding customers. All series of the ROHM transistors , Package type New name Old name Industry standard Features Ultra-compact 1.6 x 0.8 mm, the world's smallest transistor. Mounting area approximately 30% of SMT3, 60% of UMT3; ideal for ultrahigh density
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sot36 rohm surface mounted transistor series free all transistor equivalent book SC-90

MDB Resistor

Abstract: 2N1224 Rg = 150 ohms ±1% (IRC Type MDB Resistor, or equivalent). R4 = 3000 ohms 1/2 W carbon resistor. R5 = 1000 ohms. Rg = 275 ohms ±1% (IRC Type MDB Resistor, or equivalent). R7, Rg = 50 ohms ±1% (IRC Type MDB Resistor, or equivalent). Rg = 2000 ohms ±1% (IRC Type MDB Resistor, or equivalent). RlO = 150 ohms ±1% (IRC Type MDB Resistor, or equivalent). Si = Thompson Con 3AA Coax Switch, or equivalent). _ , gain, Pg). FIGURE 3. Power-gain test circuit for transistor type 2N1224. i .rnun â'¢r T. i nn
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2N1225 MDB Resistor IRC MMC carbon marking "3AA" 410B MIL-S-19500/189B MIL-S-19500

transistor x1

Abstract: SMD led spice model this, the instantaneous power dissipation in the transistor (Id x Uds) is determined at all times and a , completes determination of all the elements of the external thermal equivalent circuit diagram. The example , equivalent circuit diagrams is a description of the implementation of a dynamic temperature-dependent model , A maximum junction temperature is specified for all semiconductor components which, when exceeded , . Ignoring this effect can lead to an undesired ­ even catastrophic ­ turn-on of the transistor when it
Infineon Technologies
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BTS550P transistor x1 SMD led spice model list of P channel power mosfet buz siemens motor starter wiring schematic infineon cool MOSFET dynamic characteristic test siemens datenbuch

RCA-40673

Abstract: 40673 MOSFET -40673 is an n-channel silicon, depletion type, dual insulated-gate field-effect transistor. Special , . Johnson Type 160-104, or equivalent. C2: 1.5-5 pF variable air capacitor: E.F. Johnson Type 160-102, or equivalent C3: 1- 10 pF piston-type variable air capacitor: JFO Type VAM-010; Johanson Type 4335, or equivalent. C4: 0.8- 4.5 pF piston type variable air capacitor:Erie 560-013 or equivalent. Lj: 4 turns , MOS FIELD-EFFECT DEVICES 40673 SILICON DUAL INSULATED-GATE FIELD-EFFECT TRANSISTOR It-Channel
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RCA-40673 RCA40673 40673 MOSFET rca 40673 40673 TRANSISTOR 40673 dual gate mosfet FET 40673 200-MH

13b1 zener

Abstract: LCD22 the first matrix type displays. The MIM is electrically equivalent to the bi-directional zener diode , easy to understand. Most rely on a TN or twisted nematic type structure. A side view of this , . Putting it all together, when no field is applied light passing from the back of the display is twisted , Common electrode Alignment layers Liquid crystal layer Pixel electrode TFT thin film transistor Source line LCD22-1 Figure 1. Side View of Active Matrix TFT LCD Cell Structure (Direct View Type
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13b1 zener LCD22 LCD-2-22 zener blue stripe 1997 twisted nematic VGA color Liquid Crystal shutter Driver SMT97012

2sc5088 horizontal transistors

Abstract: S-AV36 Bipolar transistor MINI 2SC2669 2SC2670 S-MINI MIX Package Part Number Type S-MINI , SSM MIX USQ 2SC4915 Bipolar transistor Application Type Package Part Number , Package Type SMQ RF Amp Bipolar transistor Application Part Number 2SC5087 MT4S03A , Type S-MINI 1'st OSC JDP4P02AT Bipolar transistor USM Application Type Single 1 , Type *: New products 21 Type Bipolar transistor Package Type Part Number USM
Toshiba
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3SK73 3SK77 3SK78 3SK101 3SK114 3SK121 2sc5088 horizontal transistors S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 2SC2879 CB LINEAR CIRCUIT 2SC2114 2SK2497 2SK3179 2SC384 2SC1923 2SC2115

MG400H1FL1

Abstract: calculation of IGBT snubber density around the emitter. Electrodes Collector Figure 4 Planar type transistor f Curve after ^ , type of transistor. With ring shaped emitters, this occurs at one point in the center. With comb shaped , ) Two power source type direct drive circuit (2) When the transistor Q3 ON signal is applied, transistor , ent which can flow in a transistor, the voltage which can be impressed, power dissipation, etc., are determined as maximum rating values. The understanding and recognition of maxi mum ratings during transistor
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MG400H1FL1 calculation of IGBT snubber TOSHIBA Thyristor transistor circuit design
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