NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: 2SB1197K 2SB1197K SEMICONDUCTOR TECHNICAL DATA Shandong Yiguang Electronic Joint stock Co., Ltd PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY TRANSISTOR * Feature: Package:SOT-23 (1) Low Vce(sat) Vce-0.5V (Ic/Ib= -0.5A/-50mA) (2) Ic= -0.8A (3) Complements the 2SD1781K 2SD1781K ABSOLUTE , Pulse Test: Pulse Width 300uS,Duty cycle 2% DEVICE MARKING: 2SB1197K 2SB1197K=AHR SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA 2SB1197K 2SB1197K PNP EPITAXIAL SILICON TRANSISTOR ... | Original |
2 pages, |
ahr TRANSISTOR 2SB1197K 2SB1197K abstract |
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| Abstract: LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197KQLT1G L2SB1197KQLT1G Series PNP Silicon 3 FEATURE High current capacity in compact package. IC = 0.8A. 1 Epitaxial planar type. 2 NPN complement: L2SD1781K L2SD1781K We declare that the material of product compliance with RoHS requirements. SOT , L2SB1197KQLT1G L2SB1197KQLT1G AHQ 3000/Tape&Reel L2SB1197KQLT3G L2SB1197KQLT3G AHQ 10000/Tape&Reel L2SB1197KRLT1G L2SB1197KRLT1G AHR 3000/Tape&Reel L2SB1197KRLT3G L2SB1197KRLT3G AHR 10000/Tape&Reel 3 COLLECTOR 1 BASE 2 EMITTER ... | Original |
3 pages, |
L2SB1197KRLT1G L2SB1197KQLT1G ahr transistor datasheet abstract |
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| Abstract: LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197K L2SB1197K*LT1 PNP Silicon 3 FEATURE High current capacity in compact package. IC = 0.8A. 1 Epitaxial planar type. 2 NPN complement: L2SD1781K L2SD1781K Pb-Free Package is available. SOT 23 (TO236AB 236AB) DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping L2SB1197KQLT1 L2SB1197KQLT1 L2SB1197KQLT1G L2SB1197KQLT1G AHQ 3000/Tape&Reel AHR 3000/Tape&Reel AHR (Pb-Free) 3000/Tape&Reel L2SB1197KRLT1 L2SB1197KRLT1 L2SB1197KRLT1G L2SB1197KRLT1G 3 3000 ... | Original |
3 pages, |
L2SB1197KRLT1G L2SB1197KRLT1 L2SB1197KQLT1G L2SB1197KQLT1 datasheet abstract |
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| Abstract: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES , equipment. Other switching appilications. ORDERING INFORMATION Type No. Marking AHP,AHQ,AHR , www.galaxycn.com 1 BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor , Planar Transistor Production specification 2SB1197 2SB1197 TYPICAL CHARACTERISTICS @ Ta=25 unless , Production specification Silicon Epitaxial Planar Transistor 2SB1197 2SB1197 PACKAGE OUTLINE Plastic ... | Original |
4 pages, |
sot23 ahr ahr sot23 2SB1197 ahr TRANSISTOR datasheet abstract |
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| Abstract: 2SB1197K 2SB1197K - 32V, - 0.8A Elektronische Bauelemente Low Frequency Transistor RoHS Compliant , 2SD1781K 2SD1781K. . Epitaxial planar type . PNP silicon transistor 1.E mitter C SC-59 SC-59 A Dim S 2 , 2SB1197K 2SB1197K - 32V, - 0.8A Elektronische Bauelemente Low Frequency Transistor ELECTRICAL , CLASSIFIED AS FOLLOWS: ITEM hFE Marking Q 120 ~ 270 AHQ R 180 ~ 390 AHR ELECTRICAL , ://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A - 32V, - 0.8A Low Frequency Transistor Any changing of specification ... | Original |
3 pages, |
transistor j 59 ahr TRANSISTOR 2SD1781K 2SB1197K marking 25 SC-59 2SB1197K abstract |
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| Abstract: voltage power supply, with integral UPS battery charger (to 12 AHr) and solar regulator · Power supply , , Multiple Inputs & Outputs 4 voltage-free contacts 1 field effect transistor* 6 0-20mA 0 , 4-16 field effect transistors* 0 0 4 1 x 1 KHz, 3 x 100 Hz 4 100 Hz *Transistor , or NPN transistor, contact wetting current 5mA · Type-1 & -2 - four inputs · Type-4 - up to 16 , converter provides 24VDC 24VDC 150mA for analog loop supply · Battery charging circuit included for 1.2-12 AHr ... | Original |
3 pages, |
a 1413 transistor pin DB9 solar power plant ahr transistor SOLAR TRANSISTOR RSS210 fet a 1412 ups high power FET Transistor solar regulator fet 1412 high power FET Transistor for ups datasheet abstract |
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| Abstract: Transistors SMD Type Low Frequency Transistor 2SB1197K 2SB1197K SOT-23 Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 -0.5V IC / IB= -0.5A / -50mA . 3 0.4 Low VCE(sat).VCE(sat) 1 0.55 PNP silicon transistor +0.1 1.3-0.1 +0.1 2.4-0.1 IC = -0.8A. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter , hFE Classification Marking AHQ AHR Rank Q R hFE 120 270 180 390 ... | Original |
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ahr TRANSISTOR 2SB1197K MARKING SMD PNP TRANSISTOR SMD AHR 2SB1197K abstract |
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| Abstract: 2SB1197 2SB1197 -0.8 A, -40 V PNP Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen and lead free FEATURES Low VCE(sat).VCE(sat) , 82 - 180 120 - 270 180 390 AHP AHQ AHR Page 1 of 2 2SB1197 2SB1197 Elektronische Bauelemente -0.8 A, -40 V PNP Epitaxial Planar Transistor CHARACTERISTIC CURVES 01-June-2005 Rev. B ... | Original |
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ahr TRANSISTOR 2SD1781 2SB1197 2SB1197 abstract |
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| Abstract: 2SD2908 2SD2908 2SD2908 2SD2908 SOT-89 TRANSISTOR (NPN) 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 0.5 1 W (Tamb=25) 2 3. EMITTER Collector current ICM: 5 A Collector-base voltage 50 V V(BR)CBO: Operating and storage junction temperature range 3 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions , CO. Q R 120-270 180-390 AHQ AHR Http:// www.wej.cn E-mail:wej@yongerjia.com ... | Original |
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2SD2908 EQUIVALENT 2SD2908 2SD2908 abstract |
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| Abstract: 2SB1197 2SB1197 -0.8 A, -40 V PNP Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen and lead free FEATURES SOT-23 Low VCE(sat).VCE(sat)-0.5V(IC / IB = -0.5A /-50mA) IC =-0.8A Complements of the 2SD1781 2SD1781 A L 3 3 C B , ~180 120~270 AHP AHQ AHR E 2 180~390 Marking K 2SB1197-R 2SB1197-R 2 D F , Elektronische Bauelemente -0.8 A, -40 V PNP Epitaxial Planar Transistor CHARACTERISTIC CURVES http ... | Original |
2 pages, |
2SD1781 2SB1197-R 2SB1197-Q 2SB1197-P 2SB1197 2SB1197 abstract |
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| operates normally: the 5-cell battery has a capacity (C) of 500mAhr, and R4 configures IC1 for a fast-charge rate of C/2 (250mAhr for two hours). Following a fast charge, the circuit delivers a trickle charge of , this 50mA discharges a fully charged 500mAhr battery in about 10 hours.) Thus, when modifying the accuracy and temperature performance), you can substitute an npn transistor for IC2 and set the R8/R7 www.datasheetarchive.com/files/maxim/0004/appno021.htm |
Maxim | 04/04/2001 | 8.68 Kb | HTM | appno021.htm |