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Abstract: ) Inverse Diode IF= ­ IC Tcase = 25/80 °C IFM= ­ ICM Tcase = 25/80 °C; tp = 1 ms tp = 10 ms; sin.; Tj = 150 °C IFSM I2t tp = 10 ms; Tj = 150 °C A A A A2s SEMITRANS 3 Characteristics Symbol V(BR)CES , (2,1) 1,1 3 70(105) 10(26) 1,9(1,7) 2,1(1,8) ­ 3 80(140) 10(34) ­ ­ ­ VGE = 0, IC = 4 mA VGE = VCE SEMIKRON
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300GB GAL 700 semikron skm 300 gar 123 SKM 300 GB 123 D B6-100
Abstract: tp = 10 ms; sin.; Tj = 150 °C If s m l2t tp = 10 ms; T| = 150 °C f w d 6) 3 50 /23 0 6 00 , 2,5 700 24 3,2 1.0 - 1,3 20 250 90 550 70 28 26 400 160 700 100 - 2,0(1,8) 2,25(2,1) 2,5 - 1,1 3 1,2 5,5 70(105) 10(26) - 2,4 - - mA mA HA , (125) °C2) F = 200 A; Tj = 2 5 (125) °C2) - 80(140) 10(34) L L o L U > II , = 125 °C 1 pulse Tc = 25 °C Tj < 150 °C Vce = 600 V Vge = ± 15 V lc = 200 A 10* V -
OCR Scan
CASED56
Abstract: °C IFM= ­ ICM Tcase = 25/80 °C; tp = 1 ms tp = 10 ms; sin.; Tj = 150 °C IFSM tp = 10 ms; Tj = 150 , ) °C2) ­ ­ ­ ­ ­ ­ 2,0(1,8) 2,25(2,1) 1,1 3 70(105) 10(26) 2,5 ­ 1,2 5,5 ­ ­ , ) IRRM Qrr IF = 200 A; Tj = 25 (125) °C2) ­ ­ ­ ­ ­ ­ 1,9(1,7) 2,1(1,8) ­ 3 80(140) 10 , 300GB-6.vpo Tj < 150 °C VGE = + 15 V tsc < 10 us L < 25 nH ICN = 200 A 10 8 Note: *Allowed , Typ. output characteristic, tp = 80 us; 25 °C Fig. 10 Typ. output characteristic, tp = 80 us; 125 SEMIKRON
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skm 300 gar skm 22 gal 123 SKM 300 GB 12 V
Abstract: ) Inverse Diode Tease = 25/80 C If= - lc IfM= - IC M Tease = 25/80 C tp = 1 ms tp = 10 ms; sin.; T| = 150 "C Ifsm lzt tp = 10 ms; Ti = 150 °C C h a r a c t e r is t ic s Conditions 1 1 Symbol V(BR)CES V (3£ , 3 15 2,5(3,1) 3(3,8) 108 150 18 2,5 1,0 250 90 550 70 28 26 2,0(1,8) 2,25(2,1) 1,1 3 70(105) 10(26) 1.9(1,7) 2,1(1,8) 3 80(140) 10(34) - max. 6,5 4,5 0,4 3(3,7) 700 24 3,2 1,3 20 400 160 700 100 2,5 , . 10 Typ. output characteristic, tp = 80 jts; 125 °C 0 1 2 3 t Pcond(t) = VcEsalffl lc(l) 400 -
OCR Scan
10R-A10 B697 IEC68T
Abstract: 2t Units Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms tp = 10 ms; sin.; Tj = 150 °C tp = 10 , A; Tj = 25 (125) °C 2) ­ ­ ­ ­ ­ ­ 2,0(1,8) 2,25(2,1) 1,1 3 70(105) 10(26) 2,5 ­ 1,2 5,5 ­ ­ V V V m A uC ­ ­ ­ ­ ­ ­ 1,9(1,7) 2,1(1,8) ­ 3 80(140) 10(34 , without mounting hardware, which can be ordered separately under Ident No. 33321100 (for 10 SEMITRANS 3 , 300GB-6.vpo Tj < 150 °C VGE = + 15 V tsc < 10 us L < 25 nH ICN = 200 A 10 8 Note: *Allowed SEMIKRON
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SKM 300 CIRCUIT 3002Q 3002C
Abstract: ms 600 / 440 580 / 440 A Ifsm tp = 10 ms; sin.; Tj = 150 °C 2200 2900 A l2t tp = 10 ms; Tj = 150 , = = 200 A; Tj = 25 (125) ° c2> - 70(105) - A Qrr I = = 200 A; Tj = 25 (125) ° c2> - 10(26) - nc , I = = 200 A; Tj = 25 (125) ° c2> - 80(140) - ns Qrr I = = 200 A; Tj = 25 (125) ° c2> - 10(34) - , ordered separately under Ident No. 33321100 (for 10 SEMITRANS 3). Larger packing units of 12 and 20 pieces , / / / / Eoff y / 0 Rg 10 20 30 O 40 Fig. 3 Turn-on /-off energy = f (Rg) ICpuls -
OCR Scan
semikron skm 40 skm 25 gb 100 d IL0If SKM 100 GAX 173 D SKM 300 GA 102 D 12S-C ZL311
Abstract: . . . . . . . . 10 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Pin Functionality . . . . . . , . . . . . . . . . 10 4 4.1 4.2 4.3 4.3.1 4.3.2 4.3.3 4.4 4.5 Functional Description . , Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Figure 7 Figure 8 Figure 9 Figure 10 , . . . . . 10 Application Example Bipolar Supply . . . . . . . . . . . . . . . . . . . . . . . . . . Infineon Technologies
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1EDI60N12AF
Abstract: . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 , . . . . . . . . . . . . . . . . . . . . . . 10 Pin Functionality . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 , . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 , 1 Table 2 Table 3 Table 4 Table 5 Table 6 Table 7 Table 8 Table 9 Table 10 Pin Infineon Technologies
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1EDI10I12MF 1EDI20I12MF 1EDI30I12MF I12MF
Abstract: . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 , . . . . . . . . . . . . . . . . . . . . . . 10 Pin Functionality . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 , Figure 6 Figure 7 Figure 8 Figure 9 Figure 10 Typical Application . . . . . . . . . . . . . . . . , . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Application Example Bipolar Supply . . Infineon Technologies
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1EDI20N12AF
Abstract: Diagram 20 mA 60 kW 60 kW 90 kW 20 kW 10 kW 50 kW 15 kW 10 pF FEO 16 150 kW 15 SBAD 15 kW 30 kW 16.7 kW 40 pF 36 kW 60 k9 14 TEO 10 kW 20 kW 10 pF 30 k9 SEB 18 40 pF 10 kW 150 k9 FEN 17 36 pF 13 TEN VRO 19 12 2VRO 20 kW 20 kW 50 mA 20 kW 3 STATE DET. 12 kW 12 kW 11 kW 20 k9 11 TEB 48 kW 83 kW 10 SEL 2.9 , ¾ ¾ Frequency band width fc ¾ -3dB point, RIN = 6 kW Between RFO-RFN2: 10 kW  Toshiba
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TA2150FN TC9462F/TC9495F
Abstract: 1.15:1 10 kW 15 kW 30 kW WR340 2.20 - 3.30 1.15:1 10 kW 13 kW 25 kW WR284 2.60 - 3.95 1.15:1 9 kW 12 kW 20 kW WR187 3.95 - 5.85 1.15:1 7.5 kW 12 kW 20 kW WR137 5.85 - 8.20 1.15:1 7.5 kW 10 kW 17 kW WR112 7.05 - 10.00 1.15:1 5 kW 7 kW 15 kW WR90 8.20 - 12.40 1.15:1 5 kW 7 kW 15 kW WR75 10.00 - 15.00 1.2:1 3 kW 5 kW 10 kW WR62 12.40 - 18.00 1.2:1 3 kW 4 kW 10 Microwave Devices
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WR430 wr90 WR75 WR62 WR42 wr340 water load 3
Abstract: kW 50 kW 40 mA 20 kW 10 pF 40 kW 15 kW 12 RFDC VRO 14 11 TEO FEO 15 40 kW 10 pF 15 kW 20 kW 20 kW 10 TEN FEN 16 20 kW RFRP 17 50 mA 12 kW 12 kW 1.3 V 2 kW 50 kW 9 TEBC 8 , voltage: GND~VCC 15 kW 9 TEBC I 9 10 TEN I Tracking error signal generation amp negative-phase input pin 10 167 W 10 pF 40 mA 40 kW 40 kW 20 kW Tracking error signal , pF 40 mA Reference voltage (VRO) output pin 14 VRO O · VRO = 1/2 VCC when VCC = 3.3 V 10 kW Toshiba
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TA2147F Digital Servo Head Amp TC9490F/FA
Abstract: 40 mA 10 pF 40 kW 20 kW 20 kW 10 pF 15 kW FEN 16 20 kW 40 kW FEO 15 9 TEBC 50 mA 12 kW 2 kW 1.3 V RFRP 17 40 kW 12 kW RFRPIN 18 10 TEN 20 kW 50 kW 8 , (VRO) output pin · VRO = 1/2 VCC when VCC = 3.3 V 14 10 kW 40 mA I/O 20 W Symbol , ¾ ¾ ¾ GVSW = GND 2.4 ¾ ¾ 0.2 0.4 5 10 ¾ V/ms V kW 2002-11-21 , 0.2 0.4 GND reference ¾ ¾ 5 10 ¾ GVSW = VCC f = 1 kHz RFIN = 47 kW RFEFB = Toshiba
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TA2157F TA2157FN gvrp PICKUP cd TA2157F/FN TC94A14F/FA/FB SSOP24-P-300-1 SSOP24-P-300-0
Abstract: 13,000 55 ± 10 .300 .155 .468 .306 .312 9 Segment KW-104S-LR Left/Right 4 15 ± 2 13,000 44 ± 8 , -204S-EW East/West 4 14 ± 2 13,000 42 ± 10 .225 .115 .375 .275 .312 9 Segment KW-204S-LR Left/Right 4 14 ± 2 , .375 .275 .312 4 Segment KW-204S-PM Plus/Minus 4 14 ± 2 13,000 10 ± 3 .115 .115 .375 .275 .312 2 Segment KW-204S-DP Decimal Point 4 10 ± 1.5 13,000 2.7 ± 1.4 N/A N/A .375 .075 .312 1 Segment KW-204S-CL Colon 4 10 ± 1.5 13,000 5.4 ± 2.8 N/A N/A .375 .075 .312 2 Segment KW-204S-L1 Numeric 1 4 14 ± 2 13 -
OCR Scan
KW-104S-EW KW-104S-L1 KW-104S-DP-TB Wamco KW-105G-H KW-ML3-215S KW-105G-AL-DIP KW-515 00G0455 KW-100 KW-104S KW-104S-NS KW-104S-LR
Abstract: 50 kW 40 mA 20 kW 10 pF 40 kW 15 kW 12 RFDC VRO 14 11 TEO FEO 15 40 kW 10 pF 15 kW 20 kW 20 kW 10 TEN FEN 16 20 kW RFRP 17 50 mA 12 kW 12 kW 1.3 V 2 kW 50 kW 9 TEBC 8 SEL , input voltage: GND~VCC 15 kW 9 TEBC I 9 10 TEN I Tracking error signal generation amp negative-phase input pin 10 167 W 10 pF 40 mA 40 kW 40 kW 20 kW Tracking , 10 kW 15 FEO O Focus error signal generation amp output pin 40 mA 15 kW 16 16 Toshiba
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TC94A14F/FA
Abstract: C14 C8 C9 R4 10 kW 220 pF 4.7 pF 150 pF 390 kW 5.6 kW 220 pF 4.7 pF 33 pF 510 kW 10 kW 220 pF 8.2 pF 150 pF 390 kW 33 kW 220 pF 4.7 pF 33 , Oscon PGND C2 220 mF/10 V Oscon R1 2 kW D3 1N4148 D2 1N4148 2.5 V 2 + U5 LM4040 , 16 15 14 13 12 11 R6 10 10 kW 9 R5 11 kW C13 220 pF D1 DIFS4 R7 100 kW SENSE R11 10 kW R8 40.2 kW R12 10 kW C14 220 pF NOTE: 1. C10 is the soft start Temic Semiconductors
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AN719 P55 MOSFET 1n4148 0805 Siliconix An719 Si9145BY Si9145 Si4435DY P54CVRE 4410DY 4435DY 9145BY SO-16
Abstract: GND, RL = 10 kW to GND 80 dB Open Loop Unity Gain Bandwidth CL = 20 pF to GND, RL = 10 kW to GND 20 MHz DVin = 100 mV, G = â'10 V/V, DVout = 1.5 V â'" 2.5 V, CL = 20 pF to GND , kW to GND 10 MHz VS+ to VSâ' = 0.5 to 1.3 V 1.0 V/V CURRENT SUMMING AMPLIFIER â , Current Sense Unity Gain Bandwidth 300 5 mV mA 80 10 CL = 20 pF to GND, RL = 10 kW to GND , EN = Low 70 Internal Pull Down Resistance V ns 10 kW IOUT OUTPUT Input Referred ON Semiconductor
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MCPG1040LR36C NCP81143 QFN36 485CC NCP81143/D
Abstract: er e ic in a O nl MMU 0102 MMU 0102-50 ±1 10 W to 2.21 MW ±0.5 47 W to 221 kW ±1 10 W to 221 kW ±0.50 47 W to 221 kW MMU 0102-25 MMA 0204 PROFESSIONAL MMA 0204 jumper ±5 0.22 to 0.91 W ±1 1 W to 10 MW ±0.5 10 W to 475 kW ±1 10 W to 475 kW ±0.5 MMA 0204-50 - 10 W to 475 kW MMA 0204-25 MMB 0207 PROFESSIONAL MMB 0207 jumper , . MMA 0204-15 10000; tape & reel 8 2312 142 6. 10 W to 221 kW 8 9B14064AXXXXDF001 Vishay BCcomponents
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VISHAY 2312 915 2312 vishay b0207c B0207 2322 241 vishay RESISTOR 2322 VISHAY 9B08053A0R00JC00T 9B08053A0R00JC003 9B08053AXXXXJC00T 9B08053AXXXXJC003 9B08053AXXXXGC00T 9B08053AXXXXGC003
Abstract: output (filter terminal) 13 0.61 PWB 30 kW 2 kW 23 0.61 BST2 AMP 12 kW 10 kW , 10 kW 10 kW BST1 OUT OUTB BST2 Power amplifier output OUTA 3 0.61 15 kW INA 6 Power amplifier input 13 10 kW INB 13 20 kW 12 10 kW 20 kW 8 15 kW 10 kW 6 BST OUT 8 20 kW 3 PWA 12 BST amplifier 2 output terminal Vref 10 kW 10 kW BST NF2 20 kW 2 BST amplifier 2 NF terminal (low-pass compensation Toshiba
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TA2131FN beep
Abstract: 10872 D1 220 kW (250 V~) R2 (Rsync) R1 BYT86/800 18 kW/ 2W Load 1000 W L C2 2.2 mF/ 10 V R5 , =230V R 1 ( kW ) 30 PR1 ( W ) 15 95 10116 X 4 3 2 1 0 20 10 0 0 95 10114 3 6 9 , 1.5 W 8 U217B 1 47 mF/ 10 V 2 3 4 56 kW 39 kW II 1.5 mA VI 95 11308 Figure 9. Power switch 95 11309 2.2 mF/ 10 V D1 C2 220 kW (250 V~) R2 (Rsync) R1 BYT86/800 18 kW/ 2W Load 1000 , Reference voltage 1.25 V N R(25) =100 kW/B =3988 Figure 10. Temperature control 15 to 35°C with Temic Semiconductors
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U217B-B ntc 33 tic triac tic 236n triac burst fire control ic siemens ntc triac 1.7 kw U217BBF U217B-BFP U217B-BFPG3 88/540/EEC 91/690/EEC D-74025
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