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RU-550-50 GE Critical Power SPD PLUG DIN RAIL 550 MCOV 50KA visit GE Critical Power
RU-180-25 GE Critical Power SPD PLUG DIN RAIL 180 MCOV 25KA visit GE Critical Power
TD480D3025RMP GE Critical Power SPD DIN RAIL 480 DELTA 25KA UL visit GE Critical Power
TD240D3025RMP GE Critical Power SPD DIN RAIL 240DELTA 25KA UL visit GE Critical Power
TD347S1050RMP GE Critical Power SPD DIN RAIL 347 SINGLE PH 50KA visit GE Critical Power
RU-180-50 GE Critical Power SPD PLUG DIN RAIL 180 MCOV 50KA visit GE Critical Power

ac din hfe nv

Catalog Datasheet MFG & Type PDF Document Tags

BSY95A

Abstract: BSY95 « max.0.50 Metal case JEDEC TO-18 18 A 3 according to DIN 41 876 Collector connected to case Weight , Peak Collector Current IcM 200 mA Power Dissipation at TA = 25 °C Ptot 300 mW Junction Temperature Ti 175 °C Storage Temperature Range Ts -65 . . . +175 °C 66 BSY95A Characteristics at TA = 25 °C Symbol Min. Typ. Max. Unit Collector Base Breakdown Voltage at lc = 1 ¿¿A V(BR)CBO 20 - - V , 1 mA atVcE = 0.35 V, lc = 10 mA hFE hFE 30 50 70 88 200 - Collector Saturation Voltage at lc = 10
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BSY95

transistor 2sc 548

Abstract: equivalent transistor bc 649 '" , DIN 41868). They are intended for use in AF input and driver stages (BC 549; BC 550 for low-noise , Emitter-peak current ^EM 200 200 200 200 200 mA Junctiontemperature T> 150 150 150 150 150 °C Storage temperature range Tstg -65 to+150 °C Total power dissipation (Tamb = 25°C) Ptot 500 500 500 500 , (Tamb = 25 °C) | The transistors are grouped in accordance with the DC current gain hF£ and are
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BC5481 BC650 transistor 2sc 548 equivalent transistor bc 649 BC548BC BC660 2sC 548 B Bc 648 BC5461 Q62702-C687 Q62702-C687-V3 Q62702-C687-V1 Q62702-C687-V2 Q62702-C688

transistor BC 667

Abstract: transistor BC 247 °C) The transistors are grouped in accordance with the DC current gain hFe and are marked by VI, A , kO; f = 10 to 50 Hz) En - Ã0.11 S0.11 nv Dynamic characteristics (7"amb = 25 °C) -/c = 2 mA , PNP silicon Planartransistors in TO 92 plastic package 10 A 3 DIN 41868. They are intended for use in , Storage temperature range Tstg -65 to+150 °C Total power dissipation Plot 500 500 500 500 500 mW
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BC659 transistor BC 667 transistor BC 247 transistor BC 245 TRANSISTOR bc 657 BC 667 bc667 BC556-BC560 BC5561 Q62702-C692 BC556VI Q62702-C692-V3 BC556A

LAMBDA iCG

Abstract: Nemic Lambda alpha 600 1.5 kV AC output to earth simplify its use in demanding medical applications. Series NV Power , AC Format open frame optional case Warranty 4 NV Power NVM 175 W Power 3 years , W 1­6 3.2 ­ 32 V 90 ­ 264 V AC closed case 3 years NV Power 700 W 700 W (1150 W*) 1450 W , NV Power from 100 W to 300 W Medical approvals available NV Power is based around a configurable , rectifiers in a resonant topology. The NV-100 up to the NV-300 have class leading power densities i.e.: 8.3
TDK-Lambda
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NV-100 NV-175 LAMBDA iCG Nemic Lambda alpha 600 CPFE500F Lambda VEGA 900 lambda lga f Lambda VEGA 650 NV-300 EN60950 EN55022 1077-G

TDA1054

Abstract: TDA 1054 M dissipation at Tamb < 50 °C Tstg. Tj Storage and junction temperature 20 V 500 mW -40 to 150 °C ORDERING , Rth j-amb Thermal resistance junction-ambient max 200 °C/W ELECTRICAL CHARACTERISTICS ( Refer to the test circuit, Tamb= 25 °C) Parameter Test conditions Min. Typ. Max. Unit Vs Supply voltage 4 20 V Id Quiescent drain current Vs = 9V R0 = °° S1 = S2 = S3 = B 6 mA hFE DC current gain (Q1 and Q2) lc = 0.1 mA Vce=5V 300 500 â'" eN Input noise voltage (Q1) lc = 0.1 mA VCE= 5V f = 1 kHz 2 nV
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TDA1054 TDA 1054 M tda 486 ic data TAPE RECORDER bias ac din hfe nv riaa preamplifier circuit diagram

TDA 1038

Abstract: TDA1054 Tstg.Tj Storage and junction temperature -40 to 150 °C ORDERING NUMBERS: TDA 1054M mono applications 2 , resistance junction-ambient max 200 °C/W ELECTRICAL CHARACTERISTICS (Refer to the test circuit, Tamb = , current VS=9V Rl=« S1 - S2 = S3 = B 6 mA hFE DC current gain lc=0.1mA Vge = 5V 300 500 - eN Input noise voltage (Q1) nV lc= 0.1mA VCE=5V v/Hz 'N Input noise current (Q1) f = 1 kHz 0.5 PA , 300Sà + 120mH (DIN 45405) 1.3 mV 4* Output weighted background noise 1.3 mV S + N N 'Signal to
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TDA1054M TDA 1038 tda 1042 tda 1041 TDA 1041 E zg j9 00124E5 TDA1054WM CS-0062

SSFC 5A

Abstract: afsa â'¢c « # ta s Tstg â'" 55â'" + 150 °C : Electrical Characteristìcs(Tc = 25 , " Iebo Vebo = 10V 0.1 mA tt it â'¬ ìft (fi $ hFE Ic = 1 A, Vce = 5V 25 65 â'" VcE(sat) Ic=.4A IB , â'¢c/w A-113 2sc4509 liSte®®! : Characteristics ttf Kf BP Ib (mA) a»«« Collector Output , Din llpstIon Liait S \ s â'¢s S , i SS ì i >§ nv * n Pr fìv c m IS w w H- H- SS Jg « -le SS ' « ¡* » ^ §n ga
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2SC4509 SSFC 5A afsa

AUY21

Abstract: AUY22 and AUY 29 are alloyed PNP germanium transistors in a case 3 C3 DIN 41 872 (sim. TO-41). The , temperature 100 100 100 °C Storage temperature Ts - 55 to + 90 - 55 to + 90 - 55 to + 90 °C Total power dissipation (rcas( , Static characteristics (7"case = 25 °C) The transistors are classified in groups according to their static forward current transfer ratio hFE at â'" lc = 5 A, which are indicated by Roman numerals. The
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AUY29 Q62901-B13-B Q60120-Y21 AUY21 AUY22 AUY 10 TCA 700 Y AUY29V Q62901 Q60120 Q60120-Y22-
Abstract: dissipation Ts ≤ 60 °C; note 1 â' â' 400 hFE DC current gain IC = 40 mA; VCE = 8 V; Tj = 25 °C 100 120 250 Cre feedback capacitance IC = 0; VCE = 8 V; f = 1 MHz â' 0.5 â' pF fT transition frequency IC = 40 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 °C , '60 dB (DIN 45004B); IC = 40 mA; VCE = 8 V; ZL = ZS = 75 â"¦; Tamb = 25 °C; Vp = VO; Vq = VO â'6 dB , , depending on the version) - © Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced Philips Semiconductors
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BFG540 BFG540/X BFG540/XR BFG540XR

IAO5 Sharp

Abstract: free transistor equivalent book 2sc pre-stages The ACY 23 and ACY 32 are alloyed germanium PNP transistors in the case 1 A3 DIN 41871 (sim. TO , 40 mA Junction temperature Tt 90 °C Storage temperature Ts -55 to +75 °C Total power dissipation , case D ^thJcase ^50 K/W 96 ACY 23, ACY32 Static characteristics (7"amb = 25 °C) ACY 23 ACY 32 ^amb 25 60 °C Collector-base cutoff current (-^CBO = 10V) â'" ^CBO 3 ( , )*
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IAO5 Sharp free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Q60103-
Abstract: in the document, depending on the version) - © Koninklijke Philips Electronics N.V. (year). All , power dissipation Ts ≤ 95 °C â' 300 mW Cre feedback capacitance IC = ic = 0 , 1 GHz; Tamb = 25 °C 14 â' dB IC = 15 mA; VCE = 10 V; f = 2 GHz; Tamb = 25 °C 8 â' dB F noise figure IC = 5 mA; VCE = 10 V; f = 1 GHz; Î"s = Î"opt; Tamb = 25 °C , temperature â'65 +150 °C Tj junction temperature â' 175 °C Ts ≤ 95 °C; note Philips Semiconductors
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BFR92A BFT92

transistor f6 13003

Abstract: equivalent transistor bj 131-6 distortion to DIN 45004, par. 6.3: 3-tone, f = 470 MHz. 2. The typical maximum VSWR occurring in the , -39 SOT172A1 SOT128/TO-202 SOT54/TO-92 V(BR)CEO (V) max. lc , BAS 17 BCW60A (SOT23) AA AB AB AC AC BCX51 (SOT89) BCW60B (SOT23) BCX51-6 (SOT89) BCW60C
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transistor f6 13003 equivalent transistor bj 131-6 BB112 tunnel diode BFQ25 BU705

germanium

Abstract: cqx 87 values are valid at ^ amb = 25 °C, unless otherwise specified K 106 . 150 L 132 , supplied only in the above shown groups. The values o f the hFE-range lim its are taken from the DIN , 'j 'rr V °C gs 0 -" < mA V °C/W V AA 1 1 7 ') 1 502) 90  , 2 DIN 41880 JEDEC DO 7 Fig. 2: 54 A 2 DIN 41 880 JEDEC DO 35 0 0 ,SS 100Q, ;'r â'" 1 mA Diodes Switching diodes Type Fig. Nr. M axim um ratings Pv at ^ 'amb = 4 5 °c mW BA
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germanium cqx 87 TDA 2516 BZY87 Series BD 433NPNTO-126 BB505 AA113 AA117 AA119 BAV17 BAV18 BAV19

tl4311

Abstract: SOP23-5 © º» T¼ ½¾J¿ À$ I*ÍJ ÎÏ ÐiÑ )+ "« ª ¬D ¯°'± ²³´µ ¶·'¸ ÅÆÇ ÈWÇ ËÌ ½¸ z® É , .129 ÐiÑ .135 http://onsemi.com.cn 8 , ¦§s$ ¨© º» T¼ ½¾J¿ À$ I*ÍJ ÎÏ ÐiÑ )+ "« ª ¬D ¯°'± ²³´µ ¶·'¸ ÅÆÇ ÈWÇ ËÌ ½¸ z® É , ¦§s$ ¨© º» T¼ ½¾J¿ À$ I*ÍJ ÎÏ ÐiÑ )+ "« ª ¬D ¯°'± ²³´µ ¶·'¸ ÅÆÇ ÈWÇ ËÌ ½¸ z® É , ÐiÑ )+ "« ª ¬D ¯°'± ²³´µ ¶·'¸ ÅÆÇ ÈWÇ ËÌ ½¸ z® ɾ3 pzɾ 3-. uvʯ zÒÓ ¾hz
ON Semiconductor
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tl4311 SOP23-5 LM337B uc3842a uc3842b MGB20N40CLT4 2N4920 SG388CH/D

4468A

Abstract: C2024 transistor Ambient temperature, Ta - °C Parameter Symbol Conditions Ratings Unit Maximum supply voltage Vcc max 3.0 V Allowable power' dissipation Pd max 320 mW Operating temperature Topr -10 to +60 °C Storage temperature Tstg -40 to +125 °c Operating Conditions at Ta = 25°C Parameter Symbol Conditions , = -20 dBm, Rv = 0il 38 43 dB Output noise voltage Vno Rv = 0 il, BPF: 20 Hz to 20 kHz 35 48 nv , = 1.0 V, Ipp = 25 mA, 2SB1295, using a rank 6 hFE 33 39 dB Output voltage Vrf Vqq = 1.0 V, Ipp =
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LA4590W LA3235W SQFP-48 4468A C2024 transistor A00390 FR 9024 IC 4468

BFG55A

Abstract: IC05 philips ) ^CEO (V) â c (mA) P,c (mW) h FE min. max. at lc (mA) at VcE (V) VcE Mt , CHARACTERISTICS RATINGS TYPE NUMBER VC 0 B (V) ^C E O (V) â c (A) (W) hF E min. at , IEC60-2, section 6:10/1000 ps exponential; T( = 25 °C prior to the pulse. RECTIFIER DIODES , NUMBER TEMPERATURE RANGE °C RESISTANCE R at T â'žâ'žb (Ci) note 1 SENSOR CURRENT (mA , 1173 KTY85-150 -4 0 to 125 1000 ±5% 1 1173 Note 1. T«, : 25 °c. April 1S91
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BFG55A IC05 philips SMD MARKING CODE ALg philips discrete a440 a1211 lg LCD01

APC UPS CIRCUIT DIAGRAM rs 1500

Abstract: APC UPS es 500 CIRCUIT DIAGRAM /W °C/W ELECTRICAL CHARACTERISTICS Parameter lCB0 lCEO lEB0 VBE hFE -C re NF GD b Collector , V = 1 0 0 kHz VCE = -12 V = 800 MHz 10 50 550 0.25 7 -8 -500 -100 'ebo hFE fT -C re NF , lEBO VBE hFE fT -C re NF GD b Collector cutoff current (VBE = 0) Collector cutoff current (lB = 0 , ELECTRICAL CHARACTERISTICS Parameter ' ces Iceo lEBo VBE hFE fT - C re NF Collector cutoff current (VBE = 0 , 0.5 mA 5 mA BC 107 BC 108 BC 109 ELECTRICAL CHARACTERISTICS Parameter hFE* DC current gain c
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APC UPS CIRCUIT DIAGRAM rs 1500 APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM AF106

1n813 fairchild

Abstract: 2N2369 AVALANCHE PULSE GENERATOR FP, F, D Dual Flip Flop F, D FP, F, D AC Coupled Flip Flop F, C, D Gate Expanders , , D CCSL to MOS F, D MOS to CCSL F, D Multivibrators F, C,D AC Coupled One Shot , POSITIVE (NAND) LOGIC Q 0 0 1 1 c A â'¢B â'¢C â'¢D â  fXl E ~ A B C P (X) F = G â'¢ H â , . CCH V vT T IL vT X V Min. â'˜c p VCCH VF v rT Sense VCC VR , Min. Max. VFD VFD 'r â 
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1n813 fairchild 2N2369 AVALANCHE PULSE GENERATOR FD6666 diode 2N3137 UA703 equivalent FD200 diode BR-BR-0034-58

JF01

Abstract: 250v ACE 69 © _ co ADC12L038 Simplified Block Diagram CS PD CÃNV _,7 7 7 J1 HUX0UT1 rV A/DIN 1 Q-UUX0UT2 A/DIN 2 Qâ'" â â'¢QEOC -âºQ DOR Output Output Shift Logic Bu(f»r -»QDO a o o 3 < , '" MUX0UT1 â'" A/DIN t â'" MUXOUT2â'" A/DIN2 â'" VREF DGND â'" ADC 12L032 20 -v 19 â'" CCLK 18 â'" SCLK , CH3 â'" A 21 â'" SCLK CH3 â'" 4 25 â'" SCLK COM â'" 5 20 -DI CH4 â'" 5 24 â'" DI MUX0UT1â'" A/DIN 1 , 19 â'" PD 11 14 â'" AGND A/DIN 1 â'" 1 1 18 â'" AGND DGND â'" 12 13 -v MUX0UT2 â'" 12 17 A
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ADC12L030 ADC12L032 ADC12L034 LM4040 LM4041 LM9140 JF01 250v ACE 69 rs232 mi din 6 serial RS232 "12 bit" ADC 0B4 DC-DC 12L030/ 12L032/ADC12L034/ADC 12L038

Keithley

Abstract: Picoammeters . . . . . . . . . . . . . . 7011-KIT-R 96-pin Female DIN Connector . . . . . . , 121 . . 6220 6221/2182A Complete Delta Mode System, w/AC and DC Current Source, Nanovoltmeter, and all necessary cables. . . . . . . 121 6221 AC and DC Current Source. . . . . . . . , Extraction Tool. . . . . . . . . . . . . . . 7078-DIN 1.8m (6 ft) Cable . . . . . . .
Keithley Instruments
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Keithley Picoammeters transistor 2611b Keithley s900 5 DIGIT SINGLE CHIP DIGITAL MULTIMETER keithley 192 Multimeter service manual 1-888-KEITHLEY 7036-D 7074-D 7156-D 7164-D RS-232
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