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Part Manufacturer Description Datasheet BUY
TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD2E001YFPR Texas Instruments DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, DSBGA-4, Transient Suppressor visit Texas Instruments
UC1610J/883B Texas Instruments SILICON, BRIDGE RECTIFIER DIODE visit Texas Instruments
UC3612J Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments
UC3612DP Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments

aa7 marking diode

Catalog Datasheet MFG & Type PDF Document Tags

aa7 diode

Abstract: 27BSC Continuous Drain Current lo 25 A Pulsed Drain Current I um 5Û A Continuous Source Current (Diode , the package b. Surface Mounted on 1" x 1" FR4 Board, t < 10 sec. 1/6 Version: AÛ7 TSM4410D 25V , Transconductance VQS - 15Vs ln = 15A gis â'" 25 â'" S Diode Forward Voltage ls = 2.3A, V«s = 0V Vsn â'" 0.35 1.3 , Waveforms 2/6 Version: AÛ7 TSM4410D 25V Dual N-Channel MOSFET Electrical C ha ira eteri sties Curve , 125 150 Tj - Junction Temperature (°C) Source-Drain Diode Forward Voltage 100 0 0.2 0.4 0.6 0.3
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TSM4410DCS 27BSC aa7 diode 05BSC
Abstract: IAR Avalanche Current Typ. ­­­ Max. 65 Units mJ ­­­ d 11 A Diode , 3.1 ISM (Body Diode) Pulsed Source Current ­­­ ­­­ 110 VSD (Body Diode) Diode Forward Voltage ­­­ ­­­ 1.0 V S p-n junction diode. TJ = 25°C, IS = 11A, VGS = 0V trr , , Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 2 1.4 0 1 10 , = Period + - Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt International Rectifier
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IRF8714P EIA-481 EIA-541

IRF8714PBF

Abstract: irf8714 . 65 Units mJ ­­­ d 11 A Diode Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ­­­ ­­­ 3.1 ISM (Body Diode) Pulsed Source Current ­­­ ­­­ 110 VSD (Body Diode) Diode Forward Voltage ­­­ ­­­ 1.0 V S p-n junction diode. TJ = 25°C, IS = 11A, VGS = 0V trr Qrr Reverse Recovery Time Reverse , 7. Typical Source-Drain Diode Forward Voltage 4 2 1.4 0 1 10 100 VDS
International Rectifier
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IRF8714PBF irf8714
Abstract: A Diode Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current â'"â'"â'" â'"â'"â'" 3.1 ISM (Body Diode) Pulsed Source Current â'"â'"â'" â'"â'"â'" 110 VSD (Body Diode) Diode Forward Voltage â'"â'"â'" â'"â'"â'" 1.0 V S p-n junction diode. TJ = 25°C, IS = 11A, VGS = 0V trr Qrr Reverse Recovery Time Reverse , VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 2 International Rectifier
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Abstract: . â'"â'"â'" Max. 53 Units mJ â'"â'"â'" d 8.8 A Diode Characteristics Parameter , (Body Diode) Pulsed Source Current â'"â'"â'" â'"â'"â'" VSD (Body Diode) Diode Forward Voltage â'"â'"â'" â'"â'"â'" 1.0 V p-n junction diode. TJ = 25°C, IS = 8.8A, VGS = 0V , Source-Drain Diode Forward Voltage 4 1 1.4 0 1 10 100 VDS, Drain-to-Source Voltage (V , Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body International Rectifier
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IRF8707P

irf8707pbf

Abstract: aa7 marking diode 15V = 1.0MHz Max. 53 8.8 Units mJ A pF Avalanche Characteristics EAS IAR d Diode Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time , MOSFET symbol showing the integral reverse G D Ã S p-n junction diode. TJ = 25°C, IS = 8.8A, VGS = , 0.1 VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8
International Rectifier
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irf8707pbf aa7 marking diode diode aa7 IRF8707

irf8707pbf

Abstract: IRF8707 Max. 53 Units mJ ­­­ d 8.8 A Diode Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ­­­ ­­­ ISM (Body Diode) Pulsed Source Current ­­­ ­­­ VSD (Body Diode) Diode Forward Voltage ­­­ ­­­ 1.0 V p-n junction diode. TJ = 25°C, IS = 8.8A, VGS = 0V trr Qrr Reverse Recovery Time Reverse , Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 1 1.4 0 1 10 100
International Rectifier
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IRF870
Abstract: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA ÏÏ7 Ã>Ã'| ñCHTESO GDOTBlb 3 | ~ (DISCRETE/OPTO) ' 67C -Silicon Planar Typé D ~ T ¿W- 0 °) 09316 ~ 1SS104 Diode Unit in mm GENERAL PURPOSE RECTIFIER APPLICATIONS. FEATURES : . Low Forward Voltage : Vp=1.3V (Max.) . Low Reverse Current : lR=0.1nA (Typ.) 0 , Weight: 0.14g Note Marking -65-175 T ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC -
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1SS104

Abstract: TOSHIBA 1SS104 TOSHIBA {DISCRETE/OPTO} ÏÏ7 ^017550 QDOTBlb 3 9097250 TOSHIBA (DISCRETE/OPTO) * - ? -_v -Silicon Planar Typé Diode 670 0 93 16 " D~T Q°) 1SS104 GENERAL PURPOSE RECTIFIER APPLICATIONS. FEATURES: . Low Forward Voltage : Vf=1.3V (Max.) . Low Reverse Current : lR=0.1nA (Typ.) MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Maximum(Peak) Reverse Voltage Reverse Voltage SYMBOL VRM , Range Tstg -65~ 175 Weight: O.lAg Marking JL, T ELECTRICAL CHARACTERISTICS (Ta-25 C
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TOSHIBA 1SS104

F7103

Abstract: Derating Factor Linear Derating Factor (PCB Mount)* Gate-to-Source Voltage Peak Diode Recovery dv/dt  , and Characteristics Is Ism V sd trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) © Diode Forward Voltage Reverse Recovery Time Reverse Recovery , the / Iâ'" ; A integral reverse G JtU \ 12 â'" â'" s p-n junction diode. â'" 0.80 1.2 V , Voltage Vqs. Drain-to-Source Voltage (volts) Fig 7. Typical Source-Drain Diode Forward Voltage
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F7103 IRF7103 S5452

5962-E1257-2

Abstract: marking M9u *cc + 0.5 V dc Output voltage range -.-.- -0.5 V dc to Vcc + 0.5 V dc DC Input diode current (It*) - -20 mA DC output diode current Uq^)* - -50 mA DC output current , specified in table I and apply over the full case operating temperature range. 3.4 Marking. Marking shall be , 14 I 05 1 1 15 I ÏÏ5 1 1 16 | ÏÏ6 1 1 17 I 06 1 1 18 I £7 1 1 19 1 ÏÏ7 « 1 20 | 1 f vcc , ' 193A SEP 87 M .S. GOVERNMENT PRINTING OFFICE; »»7 - 748-IM-MHU DATA INPUT TIMING INPUT ss- u CLEAR
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5962-E1257-2 marking M9u MH--ST0-883 30VERMMENT 19S8-M9-90 5962-8865101RX IDT54FCT533DB

2SK2231

Abstract: 2SK223 '" Switching Time Rise Time tr lov n ¿q VGS AA7" J 1 2.5A vOUT :RL = ' 120 3d-30V â'" 18 â'" ns Turn-on , Qgd â'" 4 â'" SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL , Reverse Current Idrp â'" â'" â'" 20 A Diode Forward Voltage Vdsf IDR = 5A, VQS = 0V â'" â'" -1.7 V , Qrr â'" 0.1 â'" juC MARKING TYPE Lot Number â'" Month (Starting from Alphabet A) â'" Year (Last
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2SK2231 2SK223 k2231 SC-64 95MAX

IRF8736PBF

Abstract: IRF8736 A Diode Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ­­­ ­­­ 3.1 ISM (Body Diode) Pulsed Source Current ­­­ ­­­ 144 VSD (Body Diode) Diode Forward Voltage ­­­ ­­­ 1.0 V p-n junction diode. TJ = 25 , 1.0 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 , Ground Plane · Low Leakage Inductance Current Transformer - D= Period + Body Diode
International Rectifier
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IRF8736PBF IRF8736 IRF8736P

ML555

Abstract: h51 diode Current® 12 A I Ear Repetitive Avalanche Energy® 13 mJ dv/dt Peak Diode Recovery dv/dt @ 3.2 V/ns â , Continuous Source Current 20 MOSFET symbol â¡ (Body Diode) A showing the ( H- r) Ism : Pulsed Source Current 80 integral reverse ) i (Body Diode) ® p-n junction diode. S Vso : Diode , , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area , nternatiord IOR Reetzer IRF2525 Peak Diode Recovery dv/dt Test Circuit auyp: ¡J§ © Circuit Layout
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IRF1010 JISR9246 ML555 h51 diode c871 marking code 7Gs 002B3 T0-220
Abstract: 0.5 V dc Output voltage range -.-.- -0.5 V dc to Vcc + 0.5 V dc DC Input diode current (It*) - -20 mA DC output diode current - -50 mA DC output current- - , the full case operating temperature range. 3.4 Marking. Marking shall be in accordance with MIL-STD , DESC FORM 193A SEP 87 Ã"U.S. GOVERNMENT PRINTING OFFICE: »»7 - 748-1»-« This Material Copyrighted , 5962-88651 REVISION LEVEL SHEET 11 DESC FORM 193A SEP 87 GOVERNMENT PRINTING OFFICE: »«7 7W -
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MU--STD-883 STQ-883 P54PCT533DMB 5962-8865101SX IDT54FCT533EB 5962-88651012X
Abstract: SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL Continuous D rain Reverse C urrent Pulse D rain Reverse C urrent Diode Forward Voltage TEST CONDITION â'" ÏDR , A V 1999 10-06 2/5 â'" â'" â'" â'" â'" MARKING nnnn TPC8204 Ì5L uu , VOLTAGE Vq S 0 (V) > T 2 .5 ' H û H *3 = ' A 1 ~Aâ'"7 I 4 6 8 -
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4558 mosfet

Abstract: 4558 dd A Diode Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ­­­ ­­­ 3.1 ISM (Body Diode) Pulsed Source Current ­­­ ­­­ 144 VSD (Body Diode) Diode Forward Voltage ­­­ ­­­ 1.0 V p-n junction diode. TJ = 25 , Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 8 1.2 0.1 1 10 , Inductance Current Transformer - D= Period + Body Diode Forward Current di/dt D.U.T. VDS
International Rectifier
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4558 mosfet 4558 dd 478D 45288 w83 310 T424 DIODE
Abstract: mJ â'"â'"â'" d 14.4 A Diode Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current â'"â'"â'" â'"â'"â'" 3.1 ISM (Body Diode) Pulsed Source Current â'"â'"â'" â'"â'"â'" 144 VSD (Body Diode) Diode Forward Voltage â'"â'"â'" â'"â'"â'" 1.0 V p-n junction diode. TJ = 25°C, IS = 14.4A, VGS = 0V trr Qrr Reverse , , Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 8 1.2 0.1 1 International Rectifier
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BYV36C

Abstract: MBD447 A to lR = 1 A; measured at Ir = 0.25 A; see Fig. 26 - - 100 150 250 ns ns ns Cd diode capacitance , (square pulse) and duty factor. 1996 Jul 01 â  7110fl2b 0105^70 Ã"Ã"7 This Material Copyrighted By Its , : â  7110û2b QIDSITS 3bcl â  BYV36A to E. f = 1 MHz; Tj = 25 °C. Fig.23 Diode capacitance as a , rectifiers BYV36F and G. f = 1 MHz; Tj = 25 °C. Fig.24 Diode capacitance as a function of reverse voltage , soft-recovery controlled avalanche rectifiers PACKAGE OUTLINE BYV36 series Dimensions in mm. The marking
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BYV36B BYV36C BYV36D BYV36E BYV36G MBD447 0105T7
Abstract: Bulletin 12108 rev. D 03/98 International I©R Rectifier SAFElR Series 8EWS.S SURFACE MOUNTABLE INPUT RECTIFIER DIODE VF < 1V@ 5A Description/Features 'fsm = 200A The 8EWS , Configuration E = Single Diode P ackage W = D -P A K Q T y p e of Silicon S = S urface M ountable T , IS R Rectifier Marking Information E X A M P L E : T H IS IS AN 8 E W S 1 6 S (K , 1 ) * ! X 10.6 (0.42) 1 0 .4 (0.41) 8 .1 (0.32) 7 .9 (0.31) r 1 -8 5 < °-°7 > DIA -
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