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a7w transistor

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Abstract: MOTOROLA SC (XSTRS/R F) 4bE D m b3b?2S4 00^55^2 4 «riOTb MOTOROLA SEMICONDUCTOR mhhhhhhhhiimmmhhmhb TECHNICAL DATA The RF Line UHF Power Transistor . designed for use in 100-400 MHz broadband amplifiers. Construction utilizes the new standard, gold metallization and diffused emitter ballast , '¢ Gold Metallization for Reliability TPM425 25 W â'" 400 MHz UHF POWER TRANSISTOR NPN SILICON CASE , - I ^ /Ã7W J1Hà C» Jh: â  24 V r^rr I »-4 /77à \ c6 m rrr m 0 50 c LI â'" 50 ohm -
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tekelec a7w 57 transistor a7w 12 A7W 11 244C-01 T-33-09
Abstract: MTD3055V* N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 12 A, 60 V. RDS(ON) = 0.15 â"¦ @ VGS = 10 V • Low gate charge. • Fast switching speed. These MOSFETs , D9Ã2Ã!$#25;à E Âu6 8Â'rssvpvr‡ â7W âU D9TT arÂÂ'ÃBh‡rÃWÂ'y‡htrà Fairchild Semiconductor
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Abstract: TOSHIBA 3SK207 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3SK207 TV TUNER, UHF RF AMPLIFIER APPLICATIONS. Unit in mm â'¢ Superior Cross Modulation Performance. â'¢ Low Reverse Transfer Capacitance : Crss = 0.015pF (Typ.) â'¢ Low Noise Figure : NF = 1.9dB (Typ.) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDS 13.5 V Gate 1 , 150 mW Chanel Temperature Tch 125 °C Storage Temperature Range Tstg -55-125 °C â'"7W 2.9-a 3 1 -
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TRANSISTOR nf 841 3SK20 S4-5V TRANSISTOR nf 842 800MH 100MH
Abstract: MTD3055VL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features • 12 A, 60 V. RDS(ON) = 0.18 â"¦ @ VGS = 5 V This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • Critical DC electrical parameters specified at elevated , D9Ã2Ã!$#25;à E Âu6 8Â'rssvpvr‡ â7W âU D9TT arÂÂ'ÃBh‡rÃWÂ'y‡htrà Fairchild Semiconductor
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Abstract: drain transistor (capable of sinking current to Vgg), which is in the conducting state when superimpose , tv display. The output is an open drai ri transistor capable of sinking current to Vgg B,G,R outputs , The output is an open drain transistor capable of sinking current to Vgs- details given in Table 3 , j^rumriri AAAiWum, 28 27 26 25 2i> 23 22 21 20 19 18 17 15 15 7 6 9 10 11 12 13 14 "Ã7W top view 15 -
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SAA5057 SAA5020 Block diagram on monochrome tv receiver SAA5012 SAA5051 SAA5010 SAA5053 SAA5050 SAA5056 28-LEAD M82-1264/RST
Abstract: amorphous silicon TFT (Thin Film Transistor). It is composed o f a color TFT-LCD panel, driver ICs , (DEA) \ A7W /1 IV). VI -w -w - Teh Tes -V h / \ _Vh / ' Vh Tc . rch Tel Dot -
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Ba 33 bco A7W 88 transistor a7w A7W 86 a7w 82 a7w 89 LD-10407A LQ181E1DG01 181E1D LD-10407 LD-10407-1 LD-10407-19
Abstract: bipolar transistor) SELF-HEALING (SH) (insulated converters make particularly high demands on the , the design of the dielectric as follow s: AT rai A7"w ATc A7 r A Tre Tem perature gradient, hot spot -
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a7w 97 a7w 02 transistor a7w 69 a7w 96 a7w 67 capa mkp 1082V2 1502A2
Abstract: driven by an open drain transistor on-chip, and requires an external pull-up resistor to VcC' When an -
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82C37A 82C82 MD82C37A MR82C37A 1N4002 F14/2
Abstract: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The Transistor and Diode Data Book for Design Engineers Texas Instruments INCORPORATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY TRANSISTOR DATA SHEETS TRANSISTOR CHIP CHARACTERIZATION TRANSISTOR QUALITY AND RELIABILITY INFORMATION DIODE PRODUCT SPECTRUM DIODE SELECTION GUIDES DIODE , . Texas Instruments INCORPORATED The Transistor and Diode Data Book for Design Engineers First Edition -
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LG color tv Circuit Diagram schematics free transistor equivalent book 2sc RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A 3186J CA90245
Abstract: normalized to one standard set of conditions. 12 TTL LOADING RULES All Transistor Transistor Logic integrated , multi-emitter transistor (T-|). When the voltage level at A or B or both is less than 2 VbE(SAT) levels, the , the input transistor (T-|) will be reverse biased. The current supplied by R1 will then flow through the base-collector diode of T1 (see Figure 3) turning on transistor T2 and t4. The HIGH level input voltage source must be capable of supplying leakage current to the reverse biased input transistor -
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itt 7441 transistor fcs 9012 7446 BCD to 7-segment Fairchild dtl catalog 7400 quad 2-input NAND gate truth-table Truth Table 74192 93L00 93S00 APP-161
Abstract: change's to D.A.T.A. Inc , P.O. Box 26875, San Diego, CA 92126. TECHNICAL SECTIONS Low-Power Transistor , .563 19. Transistor Manufacturersâ'™Sales Offices .564 20. Transistor Manufacturersâ'™Logos .582 21. Transistor Manufacturersâ'™Codes, Names & Addresses , ) .134A&253A Semiconductor, Inc. Inside Cover Silicon Transistor Corp. (STC , comprehensively on what is presently being produced throughout the world in the field of transistor devices. While -
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c547b equivalent PTC SY 16P ptc 75s 2SA1030C ZN107 2SD2021 201069F S-171 CH-5400