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Part Manufacturer Description Datasheet BUY
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

a639 transistor

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: product developed or manufactured by or for Renesas Electronics. DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It , transistor has been applied ultra super mini mold package. Low Cre : 0.9 pF TYP. (@ VCB = 5 V, IE = 0, f = , '"46.5 â'"48.7 â'"50.6 â'"53.4 â'"55.9 â'"58.4 â'"61.1 â'"63.9 â'"67.3 â'"70.6 â'"74.0 â'"78.0 â Renesas Electronics
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A1357 transistor

Abstract: a639 transistor +100°C Thermal Characteristics1 θJC Active Transistor Power Dissipation Junction Temperature Above , 84.4 65.5 43.1 19.0 â'"7.0 â'"30.7 â'"49.4 â'"63.9 â'"77.6 â'"86.9 â'"94.7 â'"99.8 â
Teledyne Cougar
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A1357 transistor a639 transistor transistor a1042 a1718 MIL-HDBK-217E

a639 transistor

Abstract: Characteristics2 θJC Active Transistor Power Dissipation Junction Temperature Above Case Temperature 39/19 , '"55.3 â'"58.3 â'"61.5 â'"63.9 â'"63.8 S22 Ang Mag â'"6.4 â'"10.7 â'"9.6 â'"9.4 â'"9.4 â
Agilent Technologies
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UTO-1025 1000MH 5963-2525E

a639 transistor

Abstract: Characteristics1 θJC Active Transistor Power Dissipation Junction Temperature Above Case Temperature MTBF , '"37.7 â'"41.5 â'"45.2 â'"49.0 â'"52.7 â'"56.4 â'"60.2 â'"63.9 â'"67.5 â'"71.2 â'"74.9 â'"78.6 â
Teledyne Cougar
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a1718

Abstract: +150°C +100°C Thermal Characteristics1 θJC Active Transistor Power Dissipation Junction , 84.4 65.5 43.1 19.0 â'"7.0 â'"30.7 â'"49.4 â'"63.9 â'"77.6 â'"86.9 â'"94.7 â'"99.8 â
Agilent Technologies
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500MH 5963-3240E 5963-2546E

transistor a458 pin configuration

Abstract: Thermal Characteristics1 θJC Active Transistor Power Dissipation Junction Temperature Above Case , '"37.7 â'"41.5 â'"45.2 â'"49.0 â'"52.7 â'"56.4 â'"60.2 â'"63.9 â'"67.5 â'"71.2 â'"74.9 â'"78.6 â
Agilent Technologies
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transistor a458 pin configuration 100MH 5963-2479E

a406 rf npn

Abstract: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA855TD NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD FEATURES â'¢ Low voltage operation â'¢ 2 different built-in transistors (2SC5737, 2SC5745) Q1: Low noise transistor NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz Q2: Low phase distortion transistor suited for OSC operation fT = 5.5 GHz TYP., S21eï , '39.5 â'52.1 â'63.9 â'74.3 â'84.9 â'94.2 â'103.6 â'112.2 â'120.7 â'128.3 â'134.9 â
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a406 rf npn PA855TD-T3 PU10098EJ01V0DS

k a1046

Abstract: TRANSISTOR 2SC5432 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION , â'21.2 â'35.3 â'46.5 â'54.0 â'58.9 â'63.9 â'71.0 â'79.0 â'86.7 â'95.1 â
Renesas Electronics
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k a1046 PU10100EJ01V0DS
Abstract: , C14, C15, C22 Ceramic capacitor, 12 pF ATC 600S 120 JT Q1, Q2 Transistor Infineon , '"6.76 1910 3.67 â'"6.67 1920 3.62 â'"6.57 1930 3.56 â'"6.48 1940 3.50 â'"6.39 , C5, C10, C14, C15, C22 Ceramic capacitor, 12 pF ATC 600S 120 JT Q1, Q2 Transistor Infineon Technologies
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PTMA210152M PG-DSO-20-63 JESD22-A114F
Abstract: , 12 pF ATC 600S 120 JT Q1, Q2 Transistor Infineon Technologies BCP56 R1, R2 , '"6.57 1930 3.56 â'"6.48 1940 3.50 â'"6.39 1950 3.45 â'"6.30 1960 3.40 â , , Q2 Transistor Infineon Technologies BCP56 R1, R2 Chip resistor, 0 ohms Digi-Key Infineon Technologies
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Abstract: developed or manufactured by or for Renesas Electronics. DATA SHEET NPN SILICON RF TRANSISTOR 2SC5435 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3 , '31.8 â'41.7 â'47.3 â'49.1 â'49.4 â'51.0 â'53.6 â'56.8 â'60.1 â'63.9 â'69.8 â'76.5 â Renesas Electronics
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PU10103EJ01V0DS
Abstract: TRANSISTOR 2SC5787 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD , 0.440 0.435 0.429 0.424 0.420 0.416 0.412 0.407 â'56.7 â'58.1 â'59.7 â'61.1 â'62.5 â'63.9 , 0.249 0.219 0.189 0.165 â'16.8 â'31.3 â'41.9 â'49.1 â'55.4 â'60.4 â'63.9 â'68.0 â Renesas Electronics
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PU10070EJ01V0DS
Abstract: TRANSISTOR 2SC5369 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE AMPLIFICATION FEATURES PACKAGE , '"42.7 â'"54.0 â'"54.2 â'"56.7 â'"59.8 â'"58.5 â'"59.7 â'"62.5 â'"61.2 â'"62.6 â'"64.9 â'"63.9 â , '"57.7 â'"59.2 â'"61.3 â'"63.9 â'"66.5 â'"68.9 â'"72.4 â'"75.7 â'"78.4 â'"82.8 â'"86.1 â Renesas Electronics
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Abstract: TRANSISTOR µPA860TD NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS , ) Q1: High-gain transistor fT = 12.0 GHz TYP., S21e2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz Q2: Low phase distortion transistor suitable for 3 GHz or higher OSC applications fT = 20.0 , '34.0 â'44.0 â'54.3 â'63.9 â'72.7 â'81.2 â'90.1 â'98.2 â'106.3 â'114.0 â'121.6 â Renesas Electronics
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PU10067EJ01V0DS

Transistor a1488

Abstract: TRANSISTOR µPA861TD NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS , ) Q1: High-gain transistor fT = 12.0 GHz TYP., S21e2 = 9.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz Q2: Low phase distortion transistor suitable for 3 GHz or higher OSC applications fT = 20.0 , '41.7 â'46.6 â'50.8 â'54.6 â'57.9 â'61.2 â'63.9 â'66.3 â'68.8 â'70.8 â'72.8 â'74.5 â
NEC
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Transistor a1488 PU10057EJ02V0DS

transistor A1024

Abstract: A1712 DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR 2SC5761 NPN SiGe RF TRANSISTOR FOR LOW NOISE â' HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES â'¢ Ideal for low noise â' high-gain amplification NF = 0.9 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz â'¢ Maximum stable power gain: MSG = 20.0 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz â'¢ SiGe , 0.497 0.491 0.474 â'55.0 â'57.5 â'59.6 â'61.9 â'63.9 â'66.1 â'68.1 â'69.9 â
NEC
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transistor A1024 A1712 nec a1232 2SC5761-T2
Abstract: TRANSISTOR µPA873TD NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD FEATURES â'¢ Built-in low phase distortion transistor suited for OSC applications fT = 4.5 GHz TYP , ANG. (deg.) â'38.4 â'56.1 â'63.9 â'68.8 â'72.3 â'76.1 â'79.9 â'84.6 â'89.2 â Renesas Electronics
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PU10151EJ01V0DS

A1668

Abstract: A1489 TRANSISTOR DATA SHEET NPN SILICON RF TRANSISTOR 2SC5677 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES â'¢ Low voltage operation, low phase distortion â'¢ Ideal for OSC applications â'¢ 3-pin lead-less minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5677 50 pcs (Non reel) â'¢ 8 mm wide embossed taping 2SC5677 , '47.1 â'49.3 â'51.7 â'54.1 â'56.5 â'58.9 â'61.4 â'63.9 â'66.3 0.538 0.591 0.660 0.719
NEC
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A1668 A1489 TRANSISTOR Transistor a1244 A827 1307 2SC5677-T3 P15287EJ1V0DS0

a1069 nec

Abstract: TRANSISTOR 2SC5704 NPN SILICON RF TRANSISTOR FOR LOW NOISE â' HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS , 0.807 0.795 0.784 0.774 â'52.3 â'58.2 â'63.9 â'70.0 â'75.5 â'81.2 â'86.7 â'92.2 â
Renesas Electronics
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a1069 nec

MARKING A581

Abstract: developed or manufactured by or for Renesas Electronics. DATA SHEET NPN SILICON RF TRANSISTOR 2SC5676 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER , 0.322 0.301 â'22.3 â'38.3 â'48.0 â'54.1 â'58.1 â'61.2 â'63.9 â'66.6 â'69.3 0.081
Renesas Electronics
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MARKING A581
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