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HFA3102BZ Intersil Corporation Dual Long-Tailed Pair Transistor Array; SOIC14; Temp Range: -40° to 85°C visit Intersil Buy
HFA3102BZ96 Intersil Corporation Dual Long-Tailed Pair Transistor Array; SOIC14; Temp Range: -40° to 85°C visit Intersil Buy
HFA3135IHZ96 Intersil Corporation Ultra High Frequency Matched Pair Transistors; SOT6; Temp Range: -40° to 85°C visit Intersil Buy
HFA3134IHZ96 Intersil Corporation Ultra High Frequency Matched Pair Transistors; SOT6; Temp Range: -40° to 85°C visit Intersil Buy
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil

a14 Transistor Pair

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darlington pair transistor

Abstract: transistor ai 757 assertion path is the Darlington pair consisting of transistors Q1 and Q2. The effect of transistor Q1 is , pair consisting of transistor Q3 and transistor Q4. With M1 connecting to the input of the Darlington pair, Transistor Q4 then sinks a large amount of current during the input transition from high-to-low , A13 GND 21 28 GND B14 22 27 A14 B15 23 26 A15 NC 24 25 , 27 A14 Data Input 4 GND Signal Ground 28 GND Signal Ground 5 B2 Data
Micro Linear
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Abstract: powerful Retroreflective, Proximity (Diffuse) and Opposed Beam Pair Photo-electric Sensors provide , connector provides supply input and transistor output. These miniature sensors offer a digital gain , EMMDC & RCMDC - OPPOSED BEAM EMITTER/ RECEIVER SENSOR PAIR MODEL RRMDC - RETROREFLECTIVE SENSOR , is directed at a photo transistor, amplified and demodulated. An object which then breaks this beam , Receiver contains a sensitive photo-transistor, amplifier-demodulator and output transistor. In operation Red Lion Controls
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B7AT6C1

Abstract: B7A-R6A52 9 Transistor I/O Link Modules Reduce Wiring Back to PLC Rack for 32 I/O Points 1 Transmit 16 , connections follows in Operation section. 2. A shielded transmission cable or plain twisted pair cable with a thickness of 0.75 mm2 minimum must be used for signal transmission. If twisted pair cable is used, however , be used. In this case, however, when the output transistor of the sensor is ON, the B7A will be OFF , connected to the Input or Output Link Terminal via a twisted pair cable with a thickness of 0.75 mm2 minimum
OMRON
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darlington pair transistor

Abstract: transistor ai 757 assertion path is the Darlington pair consisting of transistors Q1 and 0 2 . The effect of transistor 01 is , Darlington pair consisting of transistor 0 3 and transistor 0 4 . With M1 connecting to the input of the Darlington pair, Transistor 0 4 then sinks a large amount of current during the input transition from , 43 44 45 46 47 48 NC A15 A14 GND A13 A12 No Connect Data Input Data Input Signal Ground Data , A13 A14 A15 Figure 5. Logic Symbol 6 M icro Linear ML65F16444 ARCHITECTURAL
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darlington pair transistor transistor ai 757

darlington pair transistor

Abstract: ML6516444CR of 3.6ns. The negation path is also the Darlington pair consisting of transistor Q3 and transistor Q4. With M1 connecting to the input of the Darlington pair, Transistor Q4 then sinks a large , 14 28 GND B14 8 22 13 27 A14 B15 9 23 12 26 A15 NC 10 24 11 , A15 Data Input 3 B1 Data Output 27 A14 Data Input 4 GND Signal Ground , A14 B14 A15 B15 Figure 9. Logic Diagram A0 A1 A2 A3 A4 A5 A6 A7
Micro Linear
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ML6516444CR ML6516444CT ML6516444

TDI ccd sensor

Abstract: ccd tdi binning (MPP mode, Ta=25 °C) Parameter Output transistor drain voltage Reset drain voltage Output gate voltage Output transistor ground voltage Substrate voltage Vertical input source Test point Vertical input gate , 0.1 0 0 1 2 3 4 5 6 7 8 9 10 500 0 0 10 20 30 40 Spacial frequency (Line pair/mm) KMPDB0248EA X-ray exposure (µGy) KMPDB0249EB Device structure Left chip ISV A14 IGV A15 , FOP 7.2 TDI direction 28.0 ± 0.3 A20 A14 B20 B14 A1 A13 B1 B13 3.4
Hamamatsu
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TDI ccd sensor ccd tdi binning S7199-01/-01F S7199-01 S7199-01F D-82211 KMPD0177E12
Abstract: (MPP mode, Ta=25 °C) Parameter Output transistor drain voltage Reset drain voltage Output gate voltage Output transistor ground voltage Substrate voltage Vertical input source Vertical input gate , 40 X-ray exposure (µGy) Spatial frequency (Line pair/mm) KMPDB0248EA KMPDB0249EB Device , 1 2 3 4 . 125 126 127 128 2 3 4 5 6 P1BV A16 S1 S2 S3 S4 S5 S6 ISV A14 IGV , 30.48 ± 0.5 1.6 B20 ␠B14 25.4 A20 ␠A14 FOP 7.2 A1 â' â' B1 A13 Hamamatsu
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KMPD1077E12

8 BIT ALU by 74181

Abstract: alu 74181 , i INPUTS (LOADING IN TRANSISTOR PAIR) : S3(2) , S2(2), Sl(2), SO(2), A15(2.5) , A14(2.5), ¿13(2.5
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8 BIT ALU by 74181 alu 74181 ABB b9 74181 f422 CFT1811A A15-A0 B15-B0 CRB0020A

S1533

Abstract: Output transistor drain voltage Reset drain voltage Output gate voltage Output transistor ground voltage , FREQUENCY (Line pair/mm) KMPDB0248EA X-RAY EXPOSURE (mR) KMPDB0249EA 3 CCD area image sensor s Device structure ISV A14 IGV A15 1 2 3 4 . 125 126127 128 2 3 4 5 6 S7199-01 LEFT CHIP , 0.4 FOP 3.0 1.6 5.6 12.7 ± 0.7 * 12.7 ± 0.7 * 25.4 28.0 ± 0.3 A20 A14 FOP 7.2 B20 B14 , Pin connections Pin No. A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16 A17 A18 A19 A20 B1 B2
Hamamatsu Photonics
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S1533 S7199 SE-171 KMPD1077E06
Abstract: Operating conditions (MPP mode, Ta=25 °C) Parameter Output transistor drain voltage Reset drain voltage Output gate voltage Output transistor ground voltage Substrate voltage Vertical input source Test point , 1 2 3 4 SPACIAL FREQUENCY (Line pair/mm) KMPDB0248EA X-RAY EXPOSURE (mR) KMPDB0249EA 3 CCD area image sensor Device structure ISV A14 IGV A15 1 2 3 4 . 125 126127 128 2 , A14 FOP 7.2 B20 B14 A1 A13 B1 B13 3.4 22.86 ± 0.5 22.86 ± 0.5 Hamamatsu Photonics
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KMPD1077E07
Abstract: V V V s Operating conditions (MPP mode, Ta=25 °C) Parameter Output transistor drain voltage Reset drain voltage Output gate voltage Output transistor ground voltage Substrate voltage Vertical , ) 0.8 CTF 500 0 0 10 20 30 40 SPACIAL FREQUENCY (Line pair/mm) KMPDB0248EA , ), CENTER CHIP (CHIP B) ISV A14, B14 IGV A15, B15 1 2 3 4 . 125 126127 128 2 3 4 5 6 P1BV A16, B16 P2BV , ± 0.5 FOP 7.2 ± 0.2 S8658-01 5.6 FOP 3.0 60.96 1.6 C20 C14 *2 25.4 60.96 A20 A14 *1 Hamamatsu
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KMPD1078E09
Abstract: V V V V V V V s Operating conditions (MPP mode, Ta=25 °C) Parameter Output transistor drain voltage Reset drain voltage Output gate voltage Output transistor ground voltage Substrate voltage , FREQUENCY (Line pair/mm) KMPDB0248EA X-RAY EXPOSURE (mR) KMPDB0249EA 3 CCD area image sensor s Device structure ISV A14 IGV A15 1 2 3 4 . 125 126127 128 2 3 4 5 6 S7199-01 LEFT CHIP , 0.4 FOP 3.0 1.6 5.6 12.7 ± 0.7 * 12.7 ± 0.7 * 25.4 28.0 ± 0.3 A20 A14 FOP 7.2 B20 B14 Hamamatsu Photonics
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KMPD1077E05

S7199-01

Abstract: S1531 Output transistor drain voltage Reset drain voltage Output gate voltage Output transistor ground , FREQUENCY (Line pair/mm) 0 0 1 2 3 4 X-RAY EXPOSURE (mR) KMPDB0248EA KMPDB0249EA , S1 S2 S3 S4 S5 S6 ISV A14 IGV A15 P1BV A16 S7199-01 B12 RD B11 SSA B10 OS B9 OD , B14 A20 A14 25.4 FOP 7.2 A1 A13 B1 22.86 ± 0.5 22.86 ± 0.5 B13 , . A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16 A17 A18 A19 A20 B1 B2 B3
Hamamatsu Photonics
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S1531 dental x-ray sensor scintillator VERTICAL S1534 kvp 39

ac 128 transistor

Abstract: Operating conditions (MPP mode, Ta=25 °C) Parameter Output transistor drain voltage Reset drain voltage Output gate voltage Output transistor ground voltage Substrate voltage Vertical input source Test , 7 8 9 10 SPACIAL FREQUENCY (Line pair/mm) 0 0 10 20 30 40 X-RAY , . 125 126127 128 2 3 4 5 6 P1BV A16, B16 S1 S2 S3 S4 S5 S6 ISV A14, B14 IGV A15 , — 6.0 (V) 5.6 FOP 228.0 ± 0.3 FOP 3.0 FOP 7.2 ± 0.2 223.0 ± 0.5 A20 ␠A14 B20
Hamamatsu
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ac 128 transistor KMPD1078E08

sensor x-ray

Abstract: mosfet ssd ) Parameter Output transistor drain voltage Reset drain voltage Output gate voltage Output transistor ground , CTF 500 0 0 1 2 3 4 SPACIAL FREQUENCY (Line pair/mm) KMPDB0248EA X-RAY EXPOSURE (mR) KMPDB0249EA 3 CCD area image sensor s Device structure ISV A14 IGV A15 1 2 3 4 , 28.0 ± 0.3 A20 A14 FOP 7.2 B20 B14 A1 A13 B1 B13 3.4 22.86 ± 0.5 22.86 , A10 A11 A12 A13 A14 A15 A16 A17 A18 A19 A20 B1 B2 B3 B4 B5 B6 B7 B8 B9 B10 B11 B12 B13 B14 B15 B16 B17
Hamamatsu
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sensor x-ray mosfet ssd KMPD1077E08

sensor x-ray

Abstract: Output transistor drain voltage Reset drain voltage Output gate voltage Output transistor ground voltage , 0 1 2 3 4 SPACIAL FREQUENCY (Line pair/mm) KMPDB0248EA X-RAY EXPOSURE (mR , A14, B14 IGV A15, B15 1 2 3 4 . 125 126127 128 2 3 4 5 6 P1BV A16, B16 P2BV A17, B17 P1AV A18 , S8658-01 5.6 FOP 3.0 60.96 1.6 C20 C14 *2 25.4 60.96 A20 A14 *1 LEFT CHIP A1 A13 45.72 B20 , , B3 A4, B4 A5, B5 A6, B6 A7, B7 A8, B8 A9, B9 A10, B10 A11, B11 A12, B12 A13, B13 A14, B14 A15, B15
Hamamatsu Photonics
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S8658 KMPD1078E05

kvp c6

Abstract: dental x-ray sensor -7 s Operating conditions (MPP mode, Ta=25 °C) Parameter Output transistor drain voltage Reset drain voltage Output gate voltage Output transistor ground voltage Substrate voltage Vertical input , 0 0 1 2 3 4 5 6 7 8 9 10 SPACIAL FREQUENCY (Line pair/mm) 0 , S3 S4 S5 S6 ISV A14, B14 IGV A15, B15 C8 A8, B8 P2AH A9, B9 P1AH A10, B10 SSD , 0.2 223.0 ± 0.5 15.24 60.96 A20 A14 B20 60.96 *2 25.4 28.0 ± 0.3 C20 C14
Hamamatsu Photonics
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kvp c6 image sensor x-ray 1BW TRANSISTOR ccd KE

ICL8049

Abstract: transistor bc 103 converted into a difference of collector currents by the transistor pair. The equation governing the behavior of the transistor pair is derived from (2) on Page 3 and is as follows : 'Cl, >c2 : exp (51 , Rl - 10kil ±12 ±14 ±12 ±14 V RL = 2ki2 ±10 ±13 ±10 ±13 V Power Consumption 150 200 , Rj_ = 10kil ±12 ±14 ±12 ±14 V RL=2k« ±10 ±13 ±10 ±13 V Power Consumption 150 200 , and the base-emitter voltage of"a transistor: {e^T-J (1) For base-emitter voltages greater than
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ICL8048 ICL8049 transistor bc 103 antilog amplifier anti-log TABLE 8048BC 8048CC
Abstract: Output transistor drain voltage Reset drain voltage Output gate voltage Output transistor ground voltage , VOLTAGE (mV) 0.8 CTF 500 0 0 1 2 3 4 SPACIAL FREQUENCY (Line pair/mm , (CHIP A), CENTER CHIP (CHIP B) ISV A14, B14 IGV A15, B15 1 2 3 4 . 125 126127 128 2 3 4 5 6 P1BV , 60.96 A20 A14 *1 LEFT CHIP A1 A13 45.72 B20 15.24 B14 28.0 ± 0.3 CENTER CHIP B1 30.48 B13 , A11, B11 A12, B12 A13, B13 A14, B14 A15, B15 A16, B16 A17, B17 A18, B18 A19, B19 A20, B20 C1 C2 C3 C4 Hamamatsu
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KMPD1078E06

D 8049 C

Abstract: ICL8049 converted into a difference of collector currents by the transistor pair. The equation governing the behavior of the transistor pair is derived from (2) on Page 3 and is as follows : 'Cl, >c2 : exp (51 , Rl - 10kil ±12 ±14 ±12 ±14 V RL = 2ki2 ±10 ±13 ±10 ±13 V Power Consumption 150 200 , Rj_ = 10kil ±12 ±14 ±12 ±14 V RL=2k« ±10 ±13 ±10 ±13 V Power Consumption 150 200 , and the base-emitter voltage of"a transistor: {e^T-J (1) For base-emitter voltages greater than
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D 8049 C an 8049 IC 8049 8048 application note 8048 8048 ir
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