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Part : SA14T/R Supplier : PanJit International Manufacturer : Avnet Stock : - Best Price : €0.0717 Price Each : €0.1434
Part : CXTA14 TR Supplier : Central Semiconductor Manufacturer : Future Electronics Stock : - Best Price : $0.37 Price Each : $0.38
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a14 Transistor Pair

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: assertion path is the Darlington pair consisting of transistors Q1 and Q2. The effect of transistor Q1 is , pair consisting of transistor Q3 and transistor Q4. With M1 connecting to the input of the Darlington pair, Transistor Q4 then sinks a large amount of current during the input transition from high-to-low , A13 GND 21 28 GND B14 22 27 A14 B15 23 26 A15 NC 24 25 , 27 A14 Data Input 4 GND Signal Ground 28 GND Signal Ground 5 B2 Data Micro Linear
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darlington pair transistor transistor ai 757 transistors ai 757 darlington pair transistor 1A DARLINGTON ARRAYS 3.3v ML65F16444CR ML65F16444
Abstract: powerful Retroreflective, Proximity (Diffuse) and Opposed Beam Pair Photo-electric Sensors provide , connector provides supply input and transistor output. These miniature sensors offer a digital gain , EMMDC & RCMDC - OPPOSED BEAM EMITTER/ RECEIVER SENSOR PAIR MODEL RRMDC - RETROREFLECTIVE SENSOR , is directed at a photo transistor, amplified and demodulated. An object which then breaks this beam , Receiver contains a sensitive photo-transistor, amplifier-demodulator and output transistor. In operation Red Lion Controls
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LP0522 201-B
Abstract: 9 Transistor I/O Link Modules Reduce Wiring Back to PLC Rack for 32 I/O Points 1 Transmit 16 , connections follows in Operation section. 2. A shielded transmission cable or plain twisted pair cable with a thickness of 0.75 mm2 minimum must be used for signal transmission. If twisted pair cable is used, however , be used. In this case, however, when the output transistor of the sensor is ON, the B7A will be OFF , connected to the Input or Output Link Terminal via a twisted pair cable with a thickness of 0.75 mm2 minimum OMRON
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B7AT6C1 B7A-R6A52 B7A-R6A57 B7AT6C6 B7AS-T6B1 B7A-T6D2 OUT10 OUT11 OUT12 OUT13 OUT14 OUT15
Abstract: assertion path is the Darlington pair consisting of transistors Q1 and 0 2 . The effect of transistor 01 is , Darlington pair consisting of transistor 0 3 and transistor 0 4 . With M1 connecting to the input of the Darlington pair, Transistor 0 4 then sinks a large amount of current during the input transition from , 43 44 45 46 47 48 NC A15 A14 GND A13 A12 No Connect Data Input Data Input Signal Ground Data , A13 A14 A15 Figure 5. Logic Symbol 6 M icro Linear ML65F16444 ARCHITECTURAL -
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Abstract: of 3.6ns. The negation path is also the Darlington pair consisting of transistor Q3 and transistor Q4. With M1 connecting to the input of the Darlington pair, Transistor Q4 then sinks a large , 14 28 GND B14 8 22 13 27 A14 B15 9 23 12 26 A15 NC 10 24 11 , A15 Data Input 3 B1 Data Output 27 A14 Data Input 4 GND Signal Ground , A14 B14 A15 B15 Figure 9. Logic Diagram A0 A1 A2 A3 A4 A5 A6 A7 Micro Linear
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ML6516444CR ML6516444CT ML6516444
Abstract: (MPP mode, Ta=25 °C) Parameter Output transistor drain voltage Reset drain voltage Output gate voltage Output transistor ground voltage Substrate voltage Vertical input source Test point Vertical input gate , 0.1 0 0 1 2 3 4 5 6 7 8 9 10 500 0 0 10 20 30 40 Spacial frequency (Line pair/mm) KMPDB0248EA X-ray exposure (uGy) KMPDB0249EB Device structure Left chip ISV A14 IGV A15 , FOP 7.2 TDI direction 28.0 ± 0.3 A20 A14 B20 B14 A1 A13 B1 B13 3.4 Hamamatsu
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ccd tdi binning TDI ccd sensor S7199-01/-01F S7199-01 S7199-01F D-82211 KMPD0177E12
Abstract: (MPP mode, Ta=25 °C) Parameter Output transistor drain voltage Reset drain voltage Output gate voltage Output transistor ground voltage Substrate voltage Vertical input source Vertical input gate , 40 X-ray exposure (ÂuGy) Spatial frequency (Line pair/mm) KMPDB0248EA KMPDB0249EB Device , 1 2 3 4 . 125 126 127 128 2 3 4 5 6 P1BV A16 S1 S2 S3 S4 S5 S6 ISV A14 IGV , 30.48 ± 0.5 1.6 B20 ␠B14 25.4 A20 ␠A14 FOP 7.2 A1 â' â' B1 A13 Hamamatsu
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KMPD1077E12
Abstract: , i INPUTS (LOADING IN TRANSISTOR PAIR) : S3(2) , S2(2), Sl(2), SO(2), A15(2.5) , A14(2.5), ¿13(2.5 -
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8 BIT ALU by 74181 ABB b9 alu 74181 74181 f422 CFT1811A A15-A0 B15-B0 CRB0020A
Abstract: Output transistor drain voltage Reset drain voltage Output gate voltage Output transistor ground voltage , FREQUENCY (Line pair/mm) KMPDB0248EA X-RAY EXPOSURE (mR) KMPDB0249EA 3 CCD area image sensor s Device structure ISV A14 IGV A15 1 2 3 4 . 125 126127 128 2 3 4 5 6 S7199-01 LEFT CHIP , 0.4 FOP 3.0 1.6 5.6 12.7 ± 0.7 * 12.7 ± 0.7 * 25.4 28.0 ± 0.3 A20 A14 FOP 7.2 B20 B14 , Pin connections Pin No. A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16 A17 A18 A19 A20 B1 B2 Hamamatsu Photonics
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S1533 S7199 SE-171 KMPD1077E06
Abstract: Operating conditions (MPP mode, Ta=25 °C) Parameter Output transistor drain voltage Reset drain voltage Output gate voltage Output transistor ground voltage Substrate voltage Vertical input source Test point , 1 2 3 4 SPACIAL FREQUENCY (Line pair/mm) KMPDB0248EA X-RAY EXPOSURE (mR) KMPDB0249EA 3 CCD area image sensor Device structure ISV A14 IGV A15 1 2 3 4 . 125 126127 128 2 , A14 FOP 7.2 B20 B14 A1 A13 B1 B13 3.4 22.86 ± 0.5 22.86 ± 0.5 Hamamatsu Photonics
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KMPD1077E07
Abstract: V V V s Operating conditions (MPP mode, Ta=25 °C) Parameter Output transistor drain voltage Reset drain voltage Output gate voltage Output transistor ground voltage Substrate voltage Vertical , ) 0.8 CTF 500 0 0 10 20 30 40 SPACIAL FREQUENCY (Line pair/mm) KMPDB0248EA , ), CENTER CHIP (CHIP B) ISV A14, B14 IGV A15, B15 1 2 3 4 . 125 126127 128 2 3 4 5 6 P1BV A16, B16 P2BV , ± 0.5 FOP 7.2 ± 0.2 S8658-01 5.6 FOP 3.0 60.96 1.6 C20 C14 *2 25.4 60.96 A20 A14 *1 Hamamatsu
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KMPD1078E09
Abstract: V V V V V V V s Operating conditions (MPP mode, Ta=25 °C) Parameter Output transistor drain voltage Reset drain voltage Output gate voltage Output transistor ground voltage Substrate voltage , FREQUENCY (Line pair/mm) KMPDB0248EA X-RAY EXPOSURE (mR) KMPDB0249EA 3 CCD area image sensor s Device structure ISV A14 IGV A15 1 2 3 4 . 125 126127 128 2 3 4 5 6 S7199-01 LEFT CHIP , 0.4 FOP 3.0 1.6 5.6 12.7 ± 0.7 * 12.7 ± 0.7 * 25.4 28.0 ± 0.3 A20 A14 FOP 7.2 B20 B14 Hamamatsu Photonics
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KMPD1077E05
Abstract: Output transistor drain voltage Reset drain voltage Output gate voltage Output transistor ground , FREQUENCY (Line pair/mm) 0 0 1 2 3 4 X-RAY EXPOSURE (mR) KMPDB0248EA KMPDB0249EA , S1 S2 S3 S4 S5 S6 ISV A14 IGV A15 P1BV A16 S7199-01 B12 RD B11 SSA B10 OS B9 OD , B14 A20 A14 25.4 FOP 7.2 A1 A13 B1 22.86 ± 0.5 22.86 ± 0.5 B13 , . A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16 A17 A18 A19 A20 B1 B2 B3 Hamamatsu Photonics
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dental x-ray sensor S1531 scintillator S1534 1BW TRANSISTOR kvp 39
Abstract: Operating conditions (MPP mode, Ta=25 °C) Parameter Output transistor drain voltage Reset drain voltage Output gate voltage Output transistor ground voltage Substrate voltage Vertical input source Test , 7 8 9 10 SPACIAL FREQUENCY (Line pair/mm) 0 0 10 20 30 40 X-RAY , . 125 126127 128 2 3 4 5 6 P1BV A16, B16 S1 S2 S3 S4 S5 S6 ISV A14, B14 IGV A15 , — 6.0 (V) 5.6 FOP 228.0 ± 0.3 FOP 3.0 FOP 7.2 ± 0.2 223.0 ± 0.5 A20 ␠A14 B20 Hamamatsu
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ac 128 transistor KMPD1078E08
Abstract: ) Parameter Output transistor drain voltage Reset drain voltage Output gate voltage Output transistor ground , CTF 500 0 0 1 2 3 4 SPACIAL FREQUENCY (Line pair/mm) KMPDB0248EA X-RAY EXPOSURE (mR) KMPDB0249EA 3 CCD area image sensor s Device structure ISV A14 IGV A15 1 2 3 4 , 28.0 ± 0.3 A20 A14 FOP 7.2 B20 B14 A1 A13 B1 B13 3.4 22.86 ± 0.5 22.86 , A10 A11 A12 A13 A14 A15 A16 A17 A18 A19 A20 B1 B2 B3 B4 B5 B6 B7 B8 B9 B10 B11 B12 B13 B14 B15 B16 B17 Hamamatsu
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sensor x-ray mosfet ssd KMPD1077E08
Abstract: Output transistor drain voltage Reset drain voltage Output gate voltage Output transistor ground voltage , 0 1 2 3 4 SPACIAL FREQUENCY (Line pair/mm) KMPDB0248EA X-RAY EXPOSURE (mR , A14, B14 IGV A15, B15 1 2 3 4 . 125 126127 128 2 3 4 5 6 P1BV A16, B16 P2BV A17, B17 P1AV A18 , S8658-01 5.6 FOP 3.0 60.96 1.6 C20 C14 *2 25.4 60.96 A20 A14 *1 LEFT CHIP A1 A13 45.72 B20 , , B3 A4, B4 A5, B5 A6, B6 A7, B7 A8, B8 A9, B9 A10, B10 A11, B11 A12, B12 A13, B13 A14, B14 A15, B15 Hamamatsu Photonics
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S8658 KMPD1078E05
Abstract: -7 s Operating conditions (MPP mode, Ta=25 °C) Parameter Output transistor drain voltage Reset drain voltage Output gate voltage Output transistor ground voltage Substrate voltage Vertical input , 0 0 1 2 3 4 5 6 7 8 9 10 SPACIAL FREQUENCY (Line pair/mm) 0 , S3 S4 S5 S6 ISV A14, B14 IGV A15, B15 C8 A8, B8 P2AH A9, B9 P1AH A10, B10 SSD , 0.2 223.0 ± 0.5 15.24 60.96 A20 A14 B20 60.96 *2 25.4 28.0 ± 0.3 C20 C14 Hamamatsu Photonics
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kvp c6 image sensor x-ray ccd KE
Abstract: converted into a difference of collector currents by the transistor pair. The equation governing the behavior of the transistor pair is derived from (2) on Page 3 and is as follows : 'Cl, >c2 : exp (51 , Rl - 10kil ±12 ±14 ±12 ±14 V RL = 2ki2 ±10 ±13 ±10 ±13 V Power Consumption 150 200 , Rj_ = 10kil ±12 ±14 ±12 ±14 V RL=2k« ±10 ±13 ±10 ±13 V Power Consumption 150 200 , and the base-emitter voltage of"a transistor: {e^T-J (1) For base-emitter voltages greater than -
OCR Scan
ICL8048 ICL8049 transistor bc 103 anti-log TABLE antilog amplifier IL11 ICL8048CC
Abstract: Output transistor drain voltage Reset drain voltage Output gate voltage Output transistor ground voltage , VOLTAGE (mV) 0.8 CTF 500 0 0 1 2 3 4 SPACIAL FREQUENCY (Line pair/mm , (CHIP A), CENTER CHIP (CHIP B) ISV A14, B14 IGV A15, B15 1 2 3 4 . 125 126127 128 2 3 4 5 6 P1BV , 60.96 A20 A14 *1 LEFT CHIP A1 A13 45.72 B20 15.24 B14 28.0 ± 0.3 CENTER CHIP B1 30.48 B13 , A11, B11 A12, B12 A13, B13 A14, B14 A15, B15 A16, B16 A17, B17 A18, B18 A19, B19 A20, B20 C1 C2 C3 C4 Hamamatsu
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KMPD1078E06
Abstract: converted into a difference of collector currents by the transistor pair. The equation governing the behavior of the transistor pair is derived from (2) on Page 3 and is as follows : 'Cl, >c2 : exp (51 , Rl - 10kil ±12 ±14 ±12 ±14 V RL = 2ki2 ±10 ±13 ±10 ±13 V Power Consumption 150 200 , Rj_ = 10kil ±12 ±14 ±12 ±14 V RL=2k« ±10 ±13 ±10 ±13 V Power Consumption 150 200 , and the base-emitter voltage of"a transistor: {e^T-J (1) For base-emitter voltages greater than -
OCR Scan
D 8049 C 8048 8048 application note 8049 an 8049 IC 8048 ir
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