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LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

a1275 transistor

Catalog Datasheet MFG & Type PDF Document Tags

transistor a1275

Abstract: a1275 transistor _ SEMICONDUCTOR KOREA ELECTRONICS CO.,LTD. TECHNICAL DATA KTA1275 EPITAXIAL PLANAR PNP TRANSISTOR COLOR TV VERT. DEFELECTION OUTPUT APPLICATION. COLOR TV CLASS B SOUND OUTPUT APPLICATION. FEATURES â'¢ High Voltage : VCeo=-160V. â'¢ Large Continuous Collector Current Capability. â , . 12. 19 Revision No : 2 KEC 1/3 KT A1275 le - Vce le - Vbe / -1 3 -12 1 COMMON EMITTER Ta , -30 -100 -300 -lk COLLECTOR CURRENT IC (mA) 1998. 12. 19 Revision No : 2 KEC 2/3 KT A1275 fT "
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KTC3228 transistor a1275 a1275 transistor A-1275 a1275 y T0-92L

transistor a1275

Abstract: a1275 transistor Ordering number:ENN5184A NPN Epitaxial Planar Silicon Transistor 2SC5245 UHF to S-Band Low-Noise Amplifier, OSC Applications Features Package Dimensions · Low noise : NF=0.9dB typ (f=1GHz). : NF=1.4dB typ (f=1.5GHz). · High gain : S21e2=10dB typ (f=1.5GHz). · High cutoff , 0.528 â'"37.2 1200 0.288 â'"127.5 4.105 83.6 0.110 57.2 0.505 â , 0.212 30.6 0.638 â'"53.4 1800 0.492 â'"127.5 1.766 72.2 0.215 28.6
SANYO Electric
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IC A1302 2059B

transistor a1275

Abstract: A1388 Characteristics1 θJC Active Transistor Power Dissipation Junction Temperature Above Case Temperature MTBF , â'"77.5 â'"110.0 â'"130.4 â'"152.4 135.4 â'"15.7 â'"58.7 â'"92.4 â'"114.6 â'"127.5 15.00
Teledyne Cougar
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A1388 transistor a2151 MIL-HDBK-217E
Abstract: +125°C â'"62 to +150°C +125°C Thermal Characteristics1 θJC Active Transistor Power Dissipation , 2.07 â'".25 â'"2.86 â'"5.75 â'"9.32 â'"12.75 â'"16.88 â'"21.61 â'"26.32 â'"30.87 â'"34.73 â Teledyne Cougar
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Abstract: Thermal Characteristics θJC Active Transistor Power Dissipation Junction Temperature Above Case , '"128.4 â'"119.3 â'"115.3 â'"113.0 â'"114.9 â'"117.3 â'"127.5 â'"143.0 â'"161.6 178.7 160.2 S12 Agilent Technologies
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1000MH 5963-2451E

transistor A1277

Abstract: a965 transistor Thermal Characteristics θJC Active Transistor Power Dissipation Junction Temperature Above Case , 2.07 â'".25 â'"2.86 â'"5.75 â'"9.32 â'"12.75 â'"16.88 â'"21.61 â'"26.32 â'"30.87 â'"34.73 â
Agilent Technologies
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transistor A1277 a965 transistor A9992 5963-2512E

a31789

Abstract: â'"62 to +150°C +125°C Thermal Characteristics1 θJC Active Transistor Power Dissipation , '"138.4 â'"128.4 â'"119.3 â'"115.3 â'"113.0 â'"114.9 â'"117.3 â'"127.5 â'"143.0 â'"161.6 178.7
Teledyne Cougar
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a31789

nec A1441

Abstract: A1441 nec developed or manufactured by or for Renesas Electronics. DATA SHEET NPN SILICON RF TRANSISTOR 2SC5433 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3 , '119.7 â'127.5 â'134.9 Data Sheet PU10101EJ01V0DS S22 5 2SC5433 VCE = 3 V, IC = 1 mA, ZO = , 0.450 0.442 0.445 0.466 0.489 0.505 0.518 0.534 0.551 â'61.7 â'103.4 â'127.5 â
Renesas Electronics
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nec A1441 A1441 nec

transistor a1275

Abstract: Current Limit Internal Thermal Overload Protection Standard 3-Lead Transistor Package Output is Short , temperature range. (1) Typical Min (2) Max (2) IL = 10 mA â'1.250 â'1.225 â'1.275 3V
Texas Instruments
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LM333 SNVS776F LM150/LM350 ISO/TS16949
Abstract: Enhancement tested Standard 3-Lead Transistor Package Output Short Circuit Protected The LM137HV/LM337HV , Max TJ = 25°C, (3) â'1.225 â'1.250 â'1.275 â'1.213 â'1.250 â'1.287 V Texas Instruments
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LM137HV LM337HV SNVS777D

LM337T

Abstract: lm337imp/nopb Thermal Overload Protection P+ Product Enhancement Tested Standard 3-lead Transistor Package Output is , Voltage Tj = 25°C (3) â'1.225 â'1.250 â'1.275 â'1.213 â'1.250 â'1.287 3V ≤ |VIN â
Texas Instruments
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LM337T lm337imp/nopb LM137 LM337-N SNVS778C LM137/LM337-N
Abstract: Pkg Level 3 UL 94 Vâ'0 @ 0.125 in Transistor Count 699 Devices Meets or exceeds JEDEC , '1820 â'1275 â'1695 â'1500 â'1995 â'1375 â'1820 â'1250 â'1695 â'1475 â ON Semiconductor
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MC100EP40 AND8020 MC100EP40/D
Abstract: Thermal Overload Protection P+ Product Enhancement Tested Standard 3-lead Transistor Package Output is , Voltage Tj = 25°C (3) â'1.225 â'1.250 â'1.275 â'1.213 â'1.250 â'1.287 3V ≤ |VIN â Texas Instruments
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SNVS778D
Abstract: Pkg Level 3 UL 94 Vâ'0 @ 0.125 in Transistor Count 699 Devices Meets or exceeds JEDEC , 11) U, U, B, B PLD â'1525 â'1945 â'1400 â'1820 â'1275 â'1695 â'1500 â ON Semiconductor
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N02A SOT-223

Abstract: Internal Thermal Overload Protection P+ Product Enhancement Tested Standard 3-lead Transistor Package , , TA = 25° C Reference Voltage Tj = 25° C â'1.225 â'1.250 â'1.275 â'1.213 â'1.250 â
Texas Instruments
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N02A SOT-223
Abstract: Thermal Overload Protection P+ Product Enhancement Tested Standard 3-lead Transistor Package Output is , Voltage Tj = 25°C (3) â'1.225 â'1.250 â'1.275 â'1.213 â'1.250 â'1.287 3V ≤ |VIN â Texas Instruments
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Abstract: Thermal Overload Protection P+ Product Enhancement Tested Standard 3-lead Transistor Package Output is , Voltage Tj = 25°C (3) â'1.225 â'1.250 â'1.275 â'1.213 â'1.250 â'1.287 3V ≤ |VIN â Texas Instruments
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transistor a2431

Abstract: A2611 8 Pin S11 Magnitude (dB) â'12.75 â'8.98 â'10.11 â'11.97 â'13.85 â'15.69 â'17.40 â'19.17 â , Figure 21. 3-Lead Small Outline Transistor Package [SOT-89] (RK-3) Dimensions shown in millimeters
Analog Devices
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transistor a2431 A2611 8 Pin a2733 a2955 A2611 transistor a954 ADL5602 0603LS-NX 09-12-2013-C PKG-003480 ADL5602ARKZ-R7 ADL5602-EVALZ

Transistor a1488

Abstract: TRANSISTOR µPA861TD NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS , ) Q1: High-gain transistor fT = 12.0 GHz TYP., S21e2 = 9.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz Q2: Low phase distortion transistor suitable for 3 GHz or higher OSC applications fT = 20.0 , S21 ANG. (deg.) â'19.3 â'37.9 â'54.3 â'69.9 â'84.1 â'96.3 â'107.7 â'118.2 â'127.5 , '96.2 â'98.6 â'127.5 â'159.0 0.958 0.904 0.833 0.754 0.676 0.609 0.550 0.498 0.453 0.416
NEC
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Transistor a1488 PU10057EJ02V0DS
Abstract: TRANSISTOR µPA863TD NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS , ) Q1: Built-in high gain transistor fT = 12.0 GHz TYP., S21e2 = 9.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz Q2: Built-in low phase distortion transistor suited for OSC operation fT = 4.5 GHz , S21 ANG. (deg.) â'19.3 â'37.9 â'54.3 â'69.9 â'84.1 â'96.3 â'107.7 â'118.2 â'127.5 , '88.0 â'89.5 â'91.6 â'93.4 â'96.2 â'98.6 â'127.5 â'159.0 0.958 0.904 0.833 0.754 0.676 Renesas Electronics
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