500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
INA101HP Texas Instruments Very High Accuracy Instrumentation Amplifier 14-PDIP -55 to 125 visit Texas Instruments Buy
INA101CM-BI Texas Instruments INSTRUMENTATION AMPLIFIER, 225uV OFFSET-MAX, 0.3MHz BAND WIDTH, MBCY10 visit Texas Instruments
INA101HP-BI Texas Instruments INSTRUMENTATION AMPLIFIER, 1150uV OFFSET-MAX, 0.3MHz BAND WIDTH, PDIP14 visit Texas Instruments
INA101KU Texas Instruments Very High Accuracy Instrumentation Amplifier 16-SOIC visit Texas Instruments Buy
INA101SG Texas Instruments INSTRUMENTATION AMPLIFIER, 225uV OFFSET-MAX, 0.3MHz BAND WIDTH, CDIP14, CERAMIC, DIP-14 visit Texas Instruments
OPA1013CH Texas Instruments DUAL OP-AMP, 400uV OFFSET-MAX, 0.8MHz BAND WIDTH, MBCY8, TO-99, 8 PIN visit Texas Instruments

a101 transistor

Catalog Datasheet MFG & Type PDF Document Tags

a101 transistor

Abstract: SMA-101 A101 / SMA101 Cascadable Amplifier 5 to 100 MHz Rev. V2 Features · · · · Product , : +64 dBm (TYP.) LOW NOISE FIGURE: 3 dB (TYP.) Description The A101 RF amplifier is a discrete , available. Ordering Information Part Number Package A101 TO-8B SMA101 Surface Mount , / 1.9:1 Transistor Power Dissipation Pd 0.7 W 105 115 125 Junction Temperature Rise , ) or information contained herein without notice. A101 / SMA101 Cascadable Amplifier 5 to 100 MHz
M/A-COM
Original
MAAM-008734-0CA101 a101 transistor SMA-101 a101 for amplifier A101 CA101 MIL-STD-883
Abstract: ORDER IP: +36 dBm (TYP.) HIGH SECOND ORDER IP: +64 dBm (TYP.) LOW NOISE FIGURE: 3 dB (TYP.) A101 / SMA101 V2 Product Image Description The A101 RF amplifier is a discrete hybrid design, which uses , Part Number A101 SMA101 CA101 Package TO-8B Surface Mount SMA Connectorized Electrical , Parameter Thermal Resistance jc Transistor Power Dissipation Pd Junction Temperature Rise Above Case Tjc , Drawing: TO-8B * A101 / SMA101 V2 WEIGHT: 2 grams (0.07 oz.) max Outline Drawing: Surface Mount M/A-COM
Original
Abstract: A101 / SMA101 Cascadable Amplifier 5 to 100 MHz Rev. V2 Features â'¢ â'¢ â'¢ â , IP: +64 dBm (TYP.) LOW NOISE FIGURE: 3 dB (TYP.) Description The A101 RF amplifier is a discrete , available. Ordering Information Part Number Package A101 TO-8B SMA101 Surface Mount , 1.7:1 / 1.7:1 1.9:1 / 1.9:1 Transistor Power Dissipation Pd 0.7 W 105 115 125 , guaranteed. changes to the product(s) or information contained herein without notice. A101 / SMA101 M/A-COM
Original

a101 transistor

Abstract: A101/SMA101 5 TO 100 MHZ TO-8 CASCADABLE AMPLIFIER · HIGH OUTPUT POWER: +23 dBm (TYP.) · HIGH THIRD ORDER IP: +36 dBm (TYP.) · HIGH SECOND ORDER IP: +64 dBm (TYP.) · LOW NOISE FIGURE: 3 dB (TYP.) Specifications (Rev. Date: 3/02)* Characteristics Frequency Small Signal Gain (min.) Gain Flatness (max , 50 mW 0.5 W 85°C Thermal Data: Vcc = 12 Vdc Thermal Resistance jc Transistor Power Dissipation , Model TO-8 BM A101 Surface Mount AB SMA101 SMA Connectorized CF CA101 Specifications subject to
M/A-COM
Original
A101/SMA101

a101 transistor

Abstract: CA101 A101/SMA101 5 TO 100 MHZ TO-8 CASCADABLE AMPLIFIER · HIGH OUTPUT POWER: +22 dBm (TYP.) · HIGH THIRD ORDER IP: +36 dBm (TYP.) · HIGH SECOND ORDER IP: +60 dBm (TYP.) · LOW NOISE FIGURE: 3 dB (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 2/02)* Characteristics Typical Frequency , °C Thermal Data: Vcc = 12 Vdc Thermal Resistance jc Transistor Power Dissipation Pd Junction Temperature , A101 Surface Mount AA SMA101 SMA Connectorized CE CA101 Specifications subject to change
M/A-COM
Original

A101 TRANSISTOR

Abstract: KS0312AO ) 925-7272 BBSB DHVG Transistor Module 5 Amperes/1200 Volts Description: The Powerex Base Drive Transistor , modules are isolated, consisting of one Bi-polar Transistor with a base-to-emitter resistor Features: â , table - i.e. KS0312A01 is a 1200 Volt, 5 Ampere Base Drive Transistor Module. vceoîsus) Current Rating , (412) 925-7272 KS0312AO Base Drive Transistor Module 5 Amperes/1200 Volts Absolute Maximum Ratings , , Youngwood, Pennsylvania 15697-1800 (412) 925-7272 KS0312A0 Base Drive Transistor Module 5 Amperes/1200
-
OCR Scan
MMBRE ks03 transistor 412 TRansistor C 101

R3381

Abstract: R3498 Transistor & Thyristor Product Change Notification PCN Tracking Number BLBF40 - Mold Compound Change This , . Qualification Plan: Following page. SOT-93 Packaged Power Transistor & Thyristor Product Change , Material Marking Termination Finish Bipolar Transistor As Qual Plan Table (Row 2) Al AlTiNiAu PSI , Notes: 1. QSS Specifications are Bourns Internal Qualification Standards. Method 1015 A101 1010 2031 2004 SS/Accept 129/1 129/1 129/1 22/0 22/0 SOT-93 Packaged Power Transistor &
Bourns
Original
MP150SG BD250C-S BD251 BDW85 BDW85-S R3381 R3498 R3381-S buv49 transistor 1015 MG15G-1040R MG15F-1040R E34947 BD245 BD245A
Abstract: accuracy and it is developed based on CMOS technology. The internal transistor with low-resistance , exceeding the capacitance of output transistor. The thermal shutdown protection circuit protects against , ‰¤4.5V MIN VOUT(S) -0.015 VOUT(S) ×0.99 TYP VOUT(S) VOUT(S) MAX VOUT(S) +0.015 VOUT(S) ×1.01 UNIT V V VIN=5.5V, VOUT(S) VOUT(S) 4.5V≤VOUT(S)≤5.0V V VOUT(S) IOUT=100mA ×0.99 ×1.01 , influenced by the input voltage and temperature change, to the output transistor. VIN Parasitic Diode Unisonic Technologies
Original
L1136 QW-R502-464
Abstract: accuracy and it is developed based on CMOS technology. The internal transistor with low-resistance , exceeding the capacitance of output transistor. The thermal shutdown protection circuit protects against , VOUT(S) VOUT(S) MAX VOUT(S) +0.015 VOUT(S) ×1.01 UNIT V V VIN=5.5V, VOUT(S) VOUT(S) 4.5V≤VOUT(S)≤5.0V V VOUT(S) IOUT=100mA ×0.99 ×1.01 3 VIN≥VOUT(S)+1.0V 1.0V≤VOUT(S)â , transistor. VIN Parasitic Diode Current Supply VOUT Error Amplifier VREF + RF VFB Unisonic Technologies
Original

r3673

Abstract: Y1031 Transistor, Thyristor & Overvoltage Protection Product Change Notification PCN Tracking Number BLBF39 - , flammability rating is V-O. TO-220 Packaged Transistor, Thyristor & Overvoltage Protection Product Change , Compound Die Attach Wire Bond L/F Material Marking Termination Finish Bipolar Transistor/Thyristor , Qualification Standards. Method 1015 A101 1010 2031 2004 SS/Accept 129/1 129/1 129/1 22/0 22/0 TO-220 Packaged Transistor, Thyristor & Overvoltage Protection Product Change Notification PCN
Bourns
Original
TIP43 Y1031 r3673 TIC106D Thyristor r3673 Philippines R3672 KTMC-1030NAP E106817 TIP122-S TIP125 TIP125-S TIP126

a101 transistor

Abstract: , high output voltage accuracy and it is developed based on CMOS technology. The internal transistor , load current while exceeding the capacitance of output transistor. The thermal shutdown protection , —0.99 TYP VOUT(S) VOUT(S) MAX VOUT(S) +0.015 VOUT(S) ×1.01 UNIT V V VIN=5.5V, VOUT(S) VOUT(S) 4.5V≤VOUT(S)≤5.0V V VOUT(S) IOUT=100mA ×0.99 ×1.01 mA 3 VIN≥VOUT(S)+1.0V 1.0Vâ , influenced by the input voltage and temperature change, to the output transistor. VIN Parasitic Diode
Unisonic Technologies
Original

2SB1181

Abstract: 2SB1241 2SB1260 / 2SB1181 /2SB1241 Transistors Power Transistor (-80V, -1 A) 2SB1260/2SB1181 /2SB1241 â'¢Features 1) High breakdown voltage and high current. BVceo= -80V, lcâ'"1A 2) Good hFE linearity. 3) LOW VcE(sat). 4) Complements the 2SD1898 / 2SD186312SD1733. â'¢Structure Epitaxial planar type PNP silicon transistor â'¢External dimensions (Units: mm) 2SB1260 2SB1181 1.6±d.1 -rr-1 ^«¡Il'ff U in 0.75 6.5±0.2 =
-
OCR Scan
2SB1241 SC-62 SC-63 G024422
Abstract: Power Transistor RT240J / RT240 Product Features Application â'¢ Frequency Range = , without notice. ⪠rfsales@rfhic.com ⪠Version 5.2 Power Transistor RT240J / RT240 , Power Transistor RT240J / RT240 Application Circuit for RT240(2500MHz) Performance Charts (Vd = , Z2 1.68 â¹10.1 C6 100nF Z3 10.6 â¹5 R1 51â"¦ Z4 0.7 â¹16 C2,C8 , change without notice. ⪠rfsales@rfhic.com ⪠Version 5.2 Power Transistor RT240J / RT240 RFHIC
Original
900MH IMT-2000 WP-22 WP-12

r3381

Abstract: R3498 Transistor & Thyristor Product Change Notification PCN Tracking Number BLBF40 - Mold Compound Change This , . Qualification Plan: Following page. SOT-93 Packaged Power Transistor & Thyristor Product Change , Transistor As Qual Plan Table (Row 2) Al AlTiNiAu PSI,Technologies, Manila, Philippines 3/SOT-93 MG15F , Qualification Standards. Method 1015 A101 1010 2031 2004 SS/Accept 129/1 129/1 129/1 22/0 22/0 SOT-93 Packaged Power Transistor & Thyristor Product Change Notification PCN Tracking Number BLBF40 -
Bourns
Original
BU466 TIC253D-S TIC263D-S TIC263M MP150s tipl763 transistor BD245 buv48s BD245A-S BD245B BD245B-S BD245C BD245C-S BD245-S

Siemens 1736

Abstract: 2sc 1740 TRANSISTOR equivalent 25C D m 0235bG5 Q004312 "J NPN Silicon Planar Transistor SIENENS AKTIEN6ESELLSCHAF $12 ISIEG 0 BCY66 BCY 66 is an epitaxial NPN silicon planar transistor in TO 18 case (18 A 3 DIN 41876). The collector is electrically connected to the case. The transistor is particularly provided for low-noise AF input stages. The complementary transistor is BCY 67. Type Ordering code BCY 66 Q60203-Y66 E ' B 0 , Nolsa figura NF = f (VCE) /c = 0.2mA;fig = 2kO;í = 1kHz dB A/ = 200Hz;Tímb = 25°C 20 W °101 5 10Â
-
OCR Scan
Siemens 1736 2sc 1740 TRANSISTOR equivalent QS 100 NPN Transistor 101S Scans-00145246 10-lmA Q0QM31

r3673

Abstract: Y1031 A101 1010 2031 2004 SS/Accept 129/1 129/1 129/1 22/0 22/0 TO-220 Packaged Transistor , Transistor, Thyristor & Overvoltage Protection Product Change Notification PCN Tracking Number BLBF39 - , flammability rating is V-O. TO-220 Packaged Transistor, Thyristor & Overvoltage Protection Product Change , Marking Termination Finish Bipolar Transistor/Thyristor As Qual Plan Table (Row 2) Al AlTiNiAu PSI , Date: June 2006 Lot 1 TIP135-S Transistor SD135HQ 65/0 65/0 65/0 12/0 12/0 Lot 2
Bourns
Original
TIC226D Philippines transistor bf64 bd657 R3673-S transistor bf65 bdx55 TIP126-S TIP127 TIP127-S TIP130 TIP130-S TIP131

transistor 1PN

Abstract: ti 26 CEM9952A Dual Enhancement Mode Field Effect Transistor^ and P Channel) FEATURES iaov , i'm, Hbto^ #VE=]0| Rdsi^I liti.il iV(3=4.5V. -30V , . Sffito^iQOiifl ffwMCW. Jto.mitnfi by. * Super high dens cell design for entrenei}' 1« Rism. * High pmer and current handing rapabiiitj1. * Surface Mount Package, so-e D1 Di Da Da Fl m m fsl Iii LU Iii Iii Si Gì Sa G a ABSOLUTE MAXIMUM RATINGS , -2+í, Vcs=CV -1 ti Gate-Gody Leakage Its Vb=±Z0i Vrf1 ±101 1 ON CHAR ACT E Rl STJ CSb Cate
-
OCR Scan
transistor 1PN ti 26
Abstract: guaranteed to a cumulative .65% AQL. 16 .055 I T («101 Wtot e ooo 1 15 14 , ). 100 mW Output Transistor Collector-emitter v o lta g e -
OCR Scan
ISD-74

WP-22

Abstract: Power Transistor RT240J / RT240 Product Features Application â'¢ Frequency Range = , without notice. ⪠rfsales@rfhic.com ⪠Version 5.2 Power Transistor RT240J / RT240 , Power Transistor RT240J / RT240 Application Circuit for RT240(2500MHz) Performance Charts (Vd = , Z2 1.68 â¹10.1 C6 100nF Z3 10.6 â¹5 R1 51â"¦ Z4 0.7 â¹16 C2,C8 , change without notice. ⪠rfsales@rfhic.com ⪠Version 5.2 Power Transistor RT240J / RT240
RFHIC
Original

132 KW motor

Abstract: B84143B2500S020 4.7 160 B85121A*A630, 55 A101, A201 158 162 Feedthrough filters B85321A*+160 16 , 168 63 . 250 500 B85321A*A630, 55 A101 . A501 Legend Terminal type: Tab connectors , transistor or thyristor circuits Electrical tools Optical devices with primary switch-mode
EPCOS
Original
B84143B1600S020 B84143B2500S020 132 KW motor Transistor AC 187 B84102K B84142A0020R000 B84143B0036-R000 B85111A B84111F B84112G B84113H B84143B1000S020 B84143B1000S080
Showing first 20 results.