500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
ATA006A0X-30SRZ GE Critical Power 6A Austin MicroLynx II SMT: Non-Isolated DC-DC Power Module visit GE Critical Power
ATA006A0XZ GE Critical Power Austin MicroLynx II 12V SIP Non-isolated Power Module visit GE Critical Power
ATA006A0X GE Critical Power Austin MicroLynx II 12V SIP Non-isolated Power Module visit GE Critical Power
ATA006A0X4 GE Critical Power Austin MicroLynx II 12V SIP Non-isolated Power Module visit GE Critical Power
ATA006A0X-SR GE Critical Power 6A Austin MicroLynx II SMT: Non-Isolated DC-DC Power Module visit GE Critical Power
ATA006A0X4-SR GE Critical Power 6A Austin MicroLynx II SMT: Non-Isolated DC-DC Power Module visit GE Critical Power

a006 mosfet

Catalog Datasheet MFG & Type PDF Document Tags

3-Pin Switch-Mode LED Driver

Abstract: AMG-LL992X are high-voltage LED driver control IC with built-in MOSFET switch and intended for LED lighting , AMG-LL992X includes an internal high-voltage switching MOSFET controlled with fixed off-time TOFF of , ± Operating temperature range -40 â'¦ +85 ºС ON-resistance of the MOSFET switch 210 Ohm Constant output , buck converter OFF-state breakdown voltage of the MOSFET switch not less 500 V 3. Application The , µA 5 ISAT * MOSFET saturation current (DRAIN pin) VDD=VDDR VDRAIN= 50 V 100 mA
Alpha Microelectronics
Original
3-Pin Switch-Mode LED Driver 400VDC 264VAC LL9921 LL9923 LL9922 85-264VAC
Abstract: NEW Series LS10 Output to 10A, 60 Vdc DC Solid-State Relay for Printed Circuit Boards FEATURES/BENEFITS â'¢ Slim compact design â'¢ Heatsinking capabilities â'¢ Integrated voltage protection â'¢ High surge handling capability â'¢ MOSFET output Description MECHANICAL SPECIFICATION , 0.25 (6.3) 0.07 ±.006 (1.7 ±0.15) 1.72 (43.6) 0.6 x 0.6 (1.5 x 1.5) C 0.30 (7.6) 10 0.07 ±.006 (1.7 ±0.15) DC 0.02 (0.55) 60 Hot surface: 0.69 (17.5) Part Teledyne Relays
Original
LS60DC10C-21 LS60DC10C LS60DC10F LS60DC10F-21 LS60DC
Abstract: Series LS10 Output to 10A, 60 Vdc DC Solid-State Relay for Printed Circuit Boards FEATURES/BENEFITS â'¢ Slim compact design â'¢ Heatsinking capabilities â'¢ Integrated voltage protection â'¢ High surge handling capability â'¢ MOSFET output Description MECHANICAL SPECIFICATION , Units 0.25 (6.3) 0.07 ±.006 (1.7 ±0.15) 1.71 (43.6) ELECTRICAL SPECIFICATIONS (+20°C , ) -21 0.30 (7.6) C 0.07 ±.006 (1.7 ±0.15) 10 0.02 (0.55) DC Hot surface: 0.69 Teledyne Relays
Original
LS60DC1
Abstract: Series LS10 Output to 10A, 60 Vdc DC Solid-State Relay for Printed Circuit Boards FEATURES/BENEFITS â'¢ Slim compact design â'¢ Heatsinking capabilities â'¢ Integrated voltage protection â'¢ High surge handling capability â'¢ MOSFET output Description MECHANICAL SPECIFICATION , 0.25 (6.3) 0.07 ±.006 (1.7 ±0.15) 1.72 (43.6) .06 x .06 (1.5 x 1.5) C 0.30 (7.6) 10 0.07 ±.006 (1.7 ±0.15) DC 0.02 (0.55) 60 Hot surface: 0.69 (17.5) Part Teledyne Relays
Original
Abstract: 2SK1588 N-CHANNEL MOSFET FOR SWITCHING PACKAGE DRAWING (Unit: mm) DESCRIPTION The 2SK1588 is an N-channel vertical type MOSFET which 4.5 ±0.1 can be driven by 2.5 V power supply. As the MOSFET is , , it is suitable for which need power saving. 2 1 3 0.42 ±0.06 0.42 ±0.06 â , . (VGS = 2.5 V, ID = 1.0 A) 0.47 ±0.06 RDS(on)2 = 0.3 â"¦ MAX. (VGS = 4.0 V, ID = 1.5 A) 1.5 Renesas Electronics
Original

BB409

Abstract: BF960 MOSFET transistors is offered. A variety of package styles is available in metal, glass and plastic , -92 0.205-.008 0.205-.008 0.165-.008 , Fig. 13 Axial Fig. 14 TO-92 0.205-.008 0.06+.006 0.1 ±.006 i Dimensions in
-
OCR Scan
BF960 BF963 BB409 LT 5202 diode BB505G BF966 BF960S BF961 BF964 BF964S
Abstract: TRANSISTOR 2SK1588 N-CHANNEL MOSFET FOR SWITCHING PACKAGE DRAWING (Unit: mm) DESCRIPTION The 2SK1588 is an N-channel vertical type MOSFET which 4.5 ±0.1 can be driven by 2.5 V power supply. As the MOSFET is driven by low voltage and does not 1.6 ±0.2 1.5 ±0.1 require consideration of driving current, it is suitable for which need power saving. 2 1 3 0.42 ±0.06 â , = 2.5 V, ID = 1.0 A) 0.42 ±0.06 0.47 ±0.06 RDS(on)2 = 0.3 Ω MAX. (VGS = 4.0 V, ID = 1.5 Renesas Electronics
Original
Abstract: TRANSISTOR 2SK1585 SWITCHING N-CHANNEL MOSFET PACKAGE DRAWING (Unit: mm) DESCRIPTION The 2SK1585 is an N-channel vertical type MOSFET which 4.5 ±0.1 can be driven by the 2.5 V power supply , ±0.1 consideration of driving current, it is suitable for appliances power saving. 1 3 0.42 ±0.06 â'¢ Directly driven by ICs having a 3 V power supply. 0.42 ±0.06 â'¢ Has low on-state resistance. RDS , ±0.1 including VCR cameras and headphone stereos which need 0.47 ±0.06 RDS(on)2 = 1.0 â"¦ MAX. (VGS = 4.0 Renesas Electronics
Original
Abstract: A3946 Half-Bridge Power MOSFET Controller Features and Benefits Description ⪠On-chip , an N-channel MOSFET that controls current to the load, while the low-side gate driver switches an N-channel MOSFET as a synchronous rectifier. Packages: 16-pin SOICW (suffix LB) 16-pin TSSOP with , VREG PGND M A3946 Half-Bridge Power MOSFET Controller Selection Guide Part Number , 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com 2 A3946 Half-Bridge Power MOSFET Controller Allegro MicroSystems
Original
JESD51-5
Abstract: 2SK1585 SWITCHING N-CHANNEL MOSFET PACKAGE DRAWING (Unit: mm) DESCRIPTION The 2SK1585 is an N-channel vertical type MOSFET which 4.5 ±0.1 can be driven by the 2.5 V power supply. As the , driving current, it is suitable for appliances power saving. 1 3 0.42 ±0.06 0.42 ±0.06 â , cameras and headphone stereos which need 0.47 ±0.06 RDS(on)2 = 1.0 â"¦ MAX. (VGS = 4.0 V, ID = 0.5 Renesas Electronics
Original

charge pump mosfet driver

Abstract: A3946 Half-Bridge Power MOSFET Controller Features and Benefits Description On-chip , MOSFETs. The high-side gate driver switches an N-channel MOSFET that controls current to the load, while the low-side gate driver switches an N-channel MOSFET as a synchronous rectifier. A bootstrap , 29319.150i VREG LGND PGND M A3946 Half-Bridge Power MOSFET Controller Selection Guide , , Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com 2 A3946 Half-Bridge Power MOSFET
Allegro MicroSystems
Original
charge pump mosfet driver
Abstract: of operation are possible depending on MOSFET size and operating load current. Thermograph of Passive Diode Bridge + Temperature Rise (°C) TG1 ~ OUTP CURRENT MOSFET (A) 2.5mΠ, operation are possible depending on MOSFET size and operating load current. By maximizing available , Information MOSFET Selection A good starting point is to reduce the voltage drop of the ideal bridge to 30mV per MOSFET with the LT4320 (50mV per MOSFET with the LT4320-1). Given the average output load Linear Technology
Original
LT4320/LT4320-1 4320/LT4320-1 LT4321 LTC4352 MSOP-12 DFN-12

LT4320

Abstract: of operation are possible depending on MOSFET size and operating load current. Thermograph of Passive Diode Bridge + Temperature Rise TG1 ~ OUTP MOSFET CURRENT 2.5mΩ TG2 LT4320 , . Higher frequencies of operation are possible depending on MOSFET size and operating load current. By , -1 Applications Information MOSFET Selection A good starting point is to reduce the voltage drop of the ideal bridge to 30mV per MOSFET with the LT4320 (50mV per MOSFET with the LT4320-1). Given the average output
Linear Technology
Original
LTC4353 MSOP-16 DFN-16 LTC4354 LTC4355 LTC4357
Abstract: OLI 580 ISO LINK OPTO-ISOLATED HIGH SPEED POWER MOSFET DRIVER For Hybrid Assembly 6 .100"±.01" 5 4 Minimum Bonding pad size .005"X .010", 6 places 3 VDD 6 Device color code* Cathode Anode 1 G ND 2 3 .110"±.01" 4 VOUT .030" ±.006" 2 Max. .065" 1 * OLI 580 Color code - grey SCHEMATIC Features PACKAGE OUTLINE Description ♦ , non-inverting power MOSFET driver for hybrid assembly for switching loads where electrical isolation is ISO LINK
Original
10KV/
Abstract: 2SK2110 N-CHANNEL MOSFET FOR HIGH-SPEED SWITCHING PACKAGE DRAWING (Unit: mm) DESCRIPTION The 2SK2110 is a N-channel MOSFET of a vertical type and is a switching element that can be directly driven , ±0.06 0.42 ±0.06 â'¢ Low on-state resistance RDS(on) = 1.5 â"¦ MAX. (VGS = 4.0 V, ID = 0.3 , , 0.47 ±0.06 1.5 TYP. 0.41 +0.03 â'"0.05 1. Source 2. Drain 3. Gate 3.0 TYP. ORDERING Renesas Electronics
Original
Abstract: TRANSISTOR 2SK2110 N-CHANNEL MOSFET FOR HIGH-SPEED SWITCHING PACKAGE DRAWING (Unit: mm) DESCRIPTION The 2SK2110 is a N-channel MOSFET of a vertical type and is a switching element that can be , product has a low on-state resistance and superb such as motors and DC/DC converters. 3 0.42 ±0.06 0.8 MIN. 0.42 ±0.06 â'¢ Low on-state resistance RDS(on) = 1.5 Ω MAX. (VGS = 4.0 V, ID = 0.3 , , 0.47 ±0.06 1.5 TYP. 0.41 +0.03 â'"0.05 1. Source 2. Drain 3. Gate 3.0 TYP. ORDERING Renesas Electronics
Original

Si7852DP

Abstract: 4w sot-23 marking n The LTC®4440-5 is a high frequency high side N-channel MOSFET gate driver that is designed , MOSFET when activated. Applications n n n n n The LTC4440-5 features supply , 80V 80V 80V MOSFET Gate Drive 100V 100V 4V to 15V 4V to 15V 8V to 15V VCC , to drive a high side N-channel power MOSFET whose drain can float up to 80V above ground , powerful output driver of the LTC4440-5 reduces the switching losses of the power MOSFET, which increase
Linear Technology
Original
Si7852DP 4w sot-23 marking LT3010/LT3010-5 LT3430 LTC3722-1/ LTC3722-2 LTC3723-1/ LTC3723-2
Abstract: n The LTC®4440A-5 is a high frequency high side N-channel MOSFET gate driver that is designed , lockout circuit that disables the external MOSFET when activated. Automotive Power Systems , Operating TS Absolute Max TS MOSFET Gate Drive VCC UV+ VCC UVâ'" LTC4440A-5 80V 100V 4V to 15V , side N-channel power MOSFET whose drain can float up to 80V above ground, eliminating the need for a , LTC4440A-5 reduces the switching losses of the power MOSFET, which increase with transition time. The Linear Technology
Original
LTC4446 LTC4441/LTC4441-1 LTC3900 LTC3901 LTC3722-1/LTC3722-2 LTC3723-1/LTC3723-2
Abstract: FQA47P06SMD2 MECHANICAL DATA Dimensions in mm (inches) Pâ'"CHANNEL POWER MOSFET 1 .2 7 (0 .0 5 0 ) m in . 3 .6 8 (0 .1 4 5 ) 3 .6 8 (0 .1 4 5 ) 3 .4 3 (0 .1 3 5 ) 3 .4 3 (0 .1 3 5 ) 4 .1 1 (0 .1 6 2 ) 3 .8 7 (0 .1 5 2 ) VDSS ID(cont) RDS(on) 3 1 7 .6 5 (0 .6 9 5 ) 1 7 .4 0 (0 .6 8 5 ) 1 2 .1 9 (0 .4 8 0 ) 1 1 .9 4 (0 .4 7 0 ) 0 .8 9 (0 .0 3 5 ) m in . 1 , (on) tr td(off) tf Unit V â'"0.06 ID = â'"27.5A VDS = VGS VDS = â'"30V VDS = â Semelab
Original

Mosfet FTR 03-E

Abstract: N-channel MOSFET transistor iftl (1) (2) (3) ROHM : CPT3 Ã'IAJ : SC-63 1.Q±Q.2 (1) Gate (2 , o 1 n A + 01 0 4 -0 .0 5 _ â'"0.06 t - MPT3 SC-62 type By , cost. 0 4-^ > D =+0.1 â'"0.06 Ail terminals have same dimensions SMT6 SC-74 type â
-
OCR Scan
Mosfet FTR 03-E 2SK2504 SC-43 SC-67 T0-220FP
Showing first 20 results.