NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Samples | Ordering |
| Part | Manufacturer | Description | Type | Ordering |
| A14S | N/A | Shortform Data and Cross References (Misc Datasheets) |
1 pages, |
Scan | |
| A14 Series | N/A | Basic Transistor and Cross Reference Specification |
1 pages, |
Scan | |
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: www.kexin.com.cn 300 s, Duty Cycle VGS = 0 V, IS = 3.4 A VGS = 0 V,dIF/dt = 100 A/ 1.4 s,IS=3.4A* V , Transistors IC SMD Type 500V N-Channel MOSFET KQB4N50 KQB4N50 + .1 1 .2 7 -00.1 TO-263 Features 3.4A, 500 V. RDS(ON) = 2.7 @ VGS = 10 V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 + .2 , 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 + .2 1 5 .2 5 -00.2 Fast switching + .2 2 .5 4 -00.2 + .2 8 .7 -00.2 Low Crss(typical 6.0pF) 5 .6 0 Low gate charge (typical ... | Original |
2 pages, |
SMD Transistor nc KQB4N50 KQB4N50 abstract |
| Abstract: 2.0% www.kexin.com.cn 300 s, Duty Cycle VGS = 0 V, IS = 1.8 A * VGS = 0 V,dIF/dt = 100 A/ 1.4 s,IS=2.4A 480 2.0 V ns C , Transistors IC SMD Type 800V N-Channel MOSFET KQB2N80 KQB2N80 + .1 1 .2 7 -00.1 TO-263 Features 2.4A, 800 V. RDS(ON) = 6.3 Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 @ VGS = 10 V + .2 , switching +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 + .2 1 5 .2 5 -00.2 Low ... | Original |
2 pages, |
SMD Transistor nc smd diode JC KQB2N80 KQB2N80 abstract |
| Abstract: rDS(on) Forward Transconductancea gfs VDS = -10 V, ID = -5.2 A 14 S Diode , /dt = 100 A/us 57 ns 21 tf Source-Drain Reverse Recovery Time 14 Notes a. Pulse , The saturated output impedance is best fit at the gate bias near the threshold voltage. A novel , convergence difficulties of the switched Cgd model. All model parameter values are optimized to provide a , the device. SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline ... | Original |
3 pages, |
Si3447DV Si3447DV abstract |
| Abstract: Transconductance a Diode Forward Voltage Dynamic rDS(on) gfs VDS = -10 V, ID = -5.2 A 14 S VSD IS = -1.7 A, VGS = 0 V 0.80 V VDS = -6 V, VGS = -4.5 V, ID = -5.2 A 3.5 b , Recovery Time 14 IF = -1.7 A, di/dt = 100 A/us 57 Notes a. Pulse test; pulse width 300 us , drive. The saturated output impedance is best fit at the gate bias near the threshold voltage. A , provide a best fit to the measured electrical data and are not intended as an exact physical ... | Original |
3 pages, |
Si3447DV Si3447DV abstract |
| Abstract: Dynamic gfs VDS = 15 V, ID = 6.8 A 14 S VSD IS = 2.5 A, VGS = 0 V 0.73 V , IF = 2.5 A, di/dt = 100 A/us 60 ns 41 tf Source-Drain Reverse Recovery Time 14 , saturated output impedance is best fit at the gate bias near the threshold voltage. A novel , convergence difficulties of the switched Cgd model. All model parameter values are optimized to provide a , the device. SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline ... | Original |
3 pages, |
Si9436DY 71578 Si9436DY abstract |
| Abstract: 3.0 V, ID = 3.1 A 0.045 VGS = 2.5 V, ID = 2.7 A 0.048 gfs VGS = 10 V, ID = 3.4 A 14 S VSD IF = IS = 1.25 A, VGS = 0 V 0.7 V VDS = 6 V, VGS = 4.5 V, ID = 3.4 A 1.2 , saturated output impedance is best fit at the gate bias near the threshold voltage. A novel , convergence difficulties of the switched Cgd model. All model parameter values are optimized to provide a , the device. SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline ... | Original |
3 pages, |
Si6925DQ Si6925DQ abstract |
| Abstract: Coss VDS = -5 V, ID = -8 A -20 Ù A 14 S 665 pF VDS=-10V,VGS=0,f=1MHZ 270 , (FDB4020P FDB4020P) TO-263 +0.1 1.27-0.1 Features -16 A, -20 V. RDS(on) = 0.08 Ù @ VGS = -4.5 V Unit: mm , Parameter VDSS -20 V Gate to source voltage VGSS 8 V ID -16 A Idp -48 A 37.5 W Drain current TC=25 Drain current-pulsed Power dissipation PD 0.25 , on-state resistance RDS(on) VGS=-4.5V,ID=-8A,TJ=125 0.098 0.13 VGS=-2.5V,ID=-7A A ... | Original |
2 pages, |
KDB4020P FDB4020P SMD 8A TRANSISTOR KDB4020P abstract |
| Abstract: 13A S A 13C A 13 14.4 16.5 1 3 3 21.5 23.2 S A 14 S A 14C 14 15.6 19.8 1 3 3 25.8 19.4 S A 14 S A 14C S A 14A S A 14C A 14 15.6 , 1.6 S A 190A S A 190C A S A 200 S A 200C 200 220 282 1 3 3 358 1.4 , A 220 S A 220C S A 220A S A 220C A 220 242 281.6 1 3 3 356 1.4 S , 10/1000u s Pe k Pul e a s C ur e t rn 10/ 000 u s 1 VC @ IPP IPP Part N umber ... | Original |
4 pages, |
SA6.0 SA220CA SA11C SA11A SA11 SA220CA abstract |
| Abstract: VOLTAGE (V) FIGURE 4. REVERSE VOLTAGE vs REVERSE CURRENT CHARACTERISTIC Ä 14 S« li. 10 z w cc 6 cc , ultrafast dual diodes (trr < 30ns) with soft recovery characteristics (ta/tb ~ 1)- They have a low forward , devices are intended for use as energy steering/ clamping diodes and rectifiers in a variety of switching , Reverse recovery time at dlp/dt « 10OA/ps (See Figure 2), summation of ta + tD. ta - Time to reach peak , of irm based on a straight line from peak Irm through 25% of Irm. Figure 2) rqjc » Thermal ... | OCR Scan |
3 pages, |
diode mur MUR1 MUR1510 MUR1515 MUR1520 RUR1510 RUR1515 mur 1520 diode mur 610 RUR1520 H3D2E71 MUR1510 abstract |
| Abstract: Electronic Characteristics Drain Current A 1.4 S 1 Shenzhen SI Semiconductors , Continuous Drain Current TC=100 ID 1.35 A IDM 8 A PD 23 W Tj 150 °C , Charge IS Continuous Diode Forward Current 2 1.4 Tj=25° Is=2A C, VGS =0V VSD , A 0.9 uC Reverse Recovery Time Reverse Recovery Charge Thermal , max SYMBOL A 4.2 4.7 E1 7.0 A1 2.3 2.9 e 2.54 b 0.45 ... | Original |
4 pages, |
600V 2A MOSFET N-channel SIF2N60FP SIF2N60FP abstract |
| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| S 74VHC 74VHC 74VHC 74VHC 14 14 S 74VHCT 74VHCT 74VHCT 74VHCT 14A 14 G TYPE PIN S 74VHC 74VHC 74VHC 74VHC 74 14 S 74VHCT 74VHCT 74VHCT 74VHCT 74A 14 S 74VHC 74VHC 74VHC 74VHC 86 14 S 74VHCT 74VHCT 74VHCT 74VHCT 86A 14 M 74VHC 74VHC 74VHC 74VHC 123A 16 S 74VHC 74VHC 74VHC 74VHC 125 14 S 74VHCT 74VHCT 74VHCT 74VHCT 125A 14 S 74VHC 74VHC 74VHC 74VHC 126 14 S www.datasheetarchive.com/files/stmicroelectronics/stonline/prodpres/standard/stanlogi/vhc.htm |
STMicroelectronics | 28/06/2000 | 25.75 Kb | HTM | vhc.htm |
| G 74VHC 74VHC 74VHC 74VHC 08 14 G 74VHCT 74VHCT 74VHCT 74VHCT 08A 14 S 74VHC 74VHC 74VHC 74VHC 14 14 S 74VHCT 74VHCT 74VHCT 74VHCT 14A 14 G 74VHC 74VHC 74VHC 74VHC 20 14 G 74VHCT 74VHCT 74VHCT 74VHCT 20A 14 G 74VHCT 74VHCT 74VHCT 74VHCT 32A 14 F TYPE PIN S 74VHC 74VHC 74VHC 74VHC 74 14 S 74VHCT 74VHCT 74VHCT 74VHCT 74A 14 S 74VHC 74VHC 74VHC 74VHC 86 14 S 74VHCT 74VHCT 74VHCT 74VHCT 86A 14 M 74VHC 74VHC 74VHC 74VHC 123A 16 S 74VHC 74VHC 74VHC 74VHC 125 14 S 74VHCT 74VHCT 74VHCT 74VHCT www.datasheetarchive.com/files/stmicroelectronics/stonline/prodpres/standard/stanlogi/vhcfam3.htm |
STMicroelectronics | 20/10/2000 | 26.17 Kb | HTM | vhcfam3.htm |
| S 74LVX 74LVX 74LVX 74LVX 14 14 G 74LVX 74LVX 74LVX 74LVX 20 14 G 74LVX 74LVX 74LVX 74LVX 27 14 G 74LVX 74LVX 74LVX 74LVX 32 14 S 74LVX 74LVX 74LVX 74LVX 74 14 S 74LVX 74LVX 74LVX 74LVX 86 14 M 74LVX 74LVX 74LVX 74LVX 123A 14 S 74LVX 74LVX 74LVX 74LVX 125 14 S 74LVX 74LVX 74LVX 74LVX 126 14 S 74LVX 74LVX 74LVX 74LVX 132 14 M 74LVX 74LVX 74LVX 74LVX 138 16 F Product Portfolio F TYPE PIN G 74LVX 74LVX 74LVX 74LVX 00 14 www.datasheetarchive.com/files/stmicroelectronics/stonline/prodpres/standard/stanlogi/lvxfam3.htm |
STMicroelectronics | 20/10/2000 | 15.58 Kb | HTM | lvxfam3.htm |
| 00002_ S:PIN27 PIN27 PIN27 PIN27 $Net00003_ S:PIN42 PIN42 PIN42 PIN42 $Net00004_ S:PIN5 $Net00006_ S:PIN1 A S:PIN44 PIN44 PIN44 PIN44 A S:PIN2 A S:PIN3 A S:PIN4 A S:PIN8 A S:PIN9 A S:PIN43 PIN43 PIN43 PIN43 A S:PIN38 PIN38 PIN38 PIN38 A S:PIN37 PIN37 PIN37 PIN37 A S:PIN36 PIN36 PIN36 PIN36 A S:PIN35 PIN35 PIN35 PIN35 A S:PIN34 PIN34 PIN34 PIN34 A S:PIN29 PIN29 PIN29 PIN29 A S:PIN28 PIN28 PIN28 PIN28 A S:PIN11 PIN11 PIN11 PIN11 A S:PIN12 PIN12 PIN12 PIN12 A S:PIN13 PIN13 PIN13 PIN13 A S:PIN14 A S:PIN18 PIN18 PIN18 PIN18 A S:PIN19 PIN19 PIN19 PIN19 ;The remaining section of the .gyd file is successful fit. PARTITION FB1_1 "A" "A" PARTITION FB1_4 "A" PARTITION FB1_6 "A www.datasheetarchive.com/download/69753992-995897ZC/xapp137.zip (PROMMAP.GYD) |
Xilinx | 03/01/2000 | 175.79 Kb | ZIP | xapp137.zip |
| 32 14 S 74LVX 74LVX 74LVX 74LVX 74 14 S 74LVX 74LVX 74LVX 74LVX 86 14 M 74LVX 74LVX 74LVX 74LVX 123A 14 S 74LVX 74LVX 74LVX 74LVX 125 14 S 74LVX 74LVX 74LVX 74LVX 126 14 S 74LVX 74LVX 74LVX 74LVX 132 14 M G 74LVX 74LVX 74LVX 74LVX 08 14 S 74LVX 74LVX 74LVX 74LVX 14 14 G °C Io Output Current 4 mA Tpd Delay Time www.datasheetarchive.com/files/stmicroelectronics/stonline/prodpres/standard/stanlogi/lvx.htm |
STMicroelectronics | 28/06/2000 | 17.35 Kb | HTM | lvx.htm |
| S0070000494E5439D4 < > S208FFFFDC0100FE001E S214FE00F 000001000000000040A7 S20CFE0124FF00000100000000D0 < < < > < < < < < S20 www.datasheetarchive.com/download/30681420-118880ZC/90545_irq_ext_int9-v10.zip (INT9.mhx) |
Fujitsu | 01/02/2012 | 42.25 Kb | ZIP | 90545_irq_ext_int9-v10.zip |
| S00800004F637530336D < > S208FFFFDC01A0FF007D < < < < < < < < < S214FFA www.datasheetarchive.com/download/22872198-118958ZC/90595_frt_ocu-v12.zip (Ocu03.mhx) |
Fujitsu | 01/02/2012 | 43.49 Kb | ZIP | 90595_frt_ocu-v12.zip |
| < < > S208FFFFDC0380FF009B < S206FF827E0000FA < < S20CFF82A0FF00060100000000CC < < < < www.datasheetarchive.com/download/65568262-119247ZC/mcu-an-390055-e-v12-rotary_encoder.zip (Rot_Enc_extIRQ.mhx) |
Fujitsu | 01/02/2012 | 87.93 Kb | ZIP | mcu-an-390055-e-v12-rotary_encoder.zip |
| < < > S208FFFFDC0380FF009B < S206FF827E0000FA < < S20CFF82A0FF00060100000000CC < < < < www.datasheetarchive.com/download/90410935-119006ZC/90xxx_hw_rotaryencoder_irq_ext-v10.zip (Rot_Enc_extIRQ.mhx) |
Fujitsu | 01/02/2012 | 44.31 Kb | ZIP | 90xxx_hw_rotaryencoder_irq_ext-v10.zip |
| ! VCE = 6 V IC = 140 mA ! Common Emitter S-Parameters: July 1994 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG .8688 129.9 0.982 17.7 0.1903 35.2 0.6267 130.6 2.000 0.8720 127.8 0.944 14.4 0.1987 32 .6732 112.4 2.800 0.8867 110.4 0.717 -9.0 0.2616 14.6 0.6847 107.2 3.000 0.8923 106.1 0.680 -14.5 0.2759 9.9 0.7001 101.8 3.200 0.8942 102.1 0.640 -19.6 0.2879 5.2 0.7112 96 www.datasheetarchive.com/files/siemens/ehdata/spar/bfg235/g96v0a14.s2p |
Siemens | 08/08/1994 | 3 Kb | S2P | g96v0a14.s2p |