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Part Manufacturer Description Datasheet BUY
LT3760IFE#TRPBF Linear Technology LT3760 - 8-Channel x 100mA LED Driver; Package: TSSOP; Pins: 28; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT3760EFE#TRPBF Linear Technology LT3760 - 8-Channel x 100mA LED Driver; Package: TSSOP; Pins: 28; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT3760IFE#PBF Linear Technology LT3760 - 8-Channel x 100mA LED Driver; Package: TSSOP; Pins: 28; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT3760EFE#PBF Linear Technology LT3760 - 8-Channel x 100mA LED Driver; Package: TSSOP; Pins: 28; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
TAS5615PHD Texas Instruments Analog input 160W Stereo (300W total) class D amplifier with integrated feedback 64-HTQFP 0 to 70 visit Texas Instruments
CC1021RUZR Texas Instruments TELECOM, CELLULAR, RF AND BASEBAND CIRCUIT, PQCC32, 7 X 7 MM, GREEN, PLASTIC, MO-220, QFN-32 visit Texas Instruments

a 3760

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: . FREQUENCY (MHz) 3775 3770 3765 C 85 ° 25 ° C C -40 ° 3760 3755 3750 3745 3740 3735 , Mount Module Applications â'¢ Microwave Radios â'¢ Satellite Communications â'¢ Direct Broadcast £(f) (dBc/Hz) 14118 Stowe Drive, Suite B | Poway, CA 92064 TEL: (858) 621-2700 | FAX: (858) 486-1927 URL: www.zcomm.com EMAIL: applications@zcomm.com Application Notes âAN-101: Mounting and Grounding âAN-102: Output Loading âAN-107: Manual Soldering OFFSET (Hz) Performance Z-Communications
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CRO3750A-LF MINI-16 FRM-S-002 MINI-16-LOW MINI-16-L MINI-16-UL
Abstract: °C / Tc = 85°C MIN. TYP. MAX. UNIT 17.31 20 23.14 kil â'" 3760 â'" K 1999 10-22 4/9 - TO SH , , MIG30J806HA HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS âââââ , from Case. Outline MIG30J806H : 2-108E5A MIG30J806HA : 2-108E6A â'¢ Weight : 190g EQUIVALENT , situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily , Handbook. The Information contained herein is presented only as a guide for the applications of our -
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MIG30J806H/HA 961001EAA2

MIG30J806E

Abstract: MIG30J806EA '" 3760 â'" K 1999-02-18 4/4 , , Converter Power Circuits and Thermistor in One Package. Output (Inverter Stage) : 3y5 30 A/600 V IGBT Input (Converter Stage) : 3 j> 30 A /800 V Silicon Rectifier The Electrodes are Isolated from Case , 12 o N1 4o- 9 o- 3 6 o- >U 10 o- 7 < 8o- >V 1 o Hi >W o 13 2 o 961001EAA1 â , observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA
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MIG30J806E MIG30J806EA mig30j MIG30J806E/EA
Abstract: 420.0 1 548.0 1.5KE440(C)A 376.0 418.0 462.0 1 602.0 * For bidirectional parts with VR M W , SEM ICONDUCTOR tm 1.5KE6.8(C)A - 1 .5KE440(C)A Features 1.0 min (25.4) â'¢ Glass passivated junction. Dimensions in inches (mm) 0.375 (9.525) 0.265 (6.731) â'¢ 1500W Peak Pulse Power capability at 1.0 ms. â'¢ Excellent clamping capability. â'¢ Low incremental surge resistance. â'¢ Fast response time; typically less than 1.0 ps from 0 volts to BV for unidirectional and 5.0 -
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5KE68 5KE75 5KE82 5KE91 5KE100 5KE110
Abstract: P6KE400(C)A 342.0 P6KE440(C)A 376.0 V [iW M Breakdown Voltage Test Max Clamping Current Voltage @IPPM , P6KE6.8(C)A D iscrete POWER & Sign al Technologies IM IC O N D U C TQ R tm P6KE6.8(C)A - P6KE440(C)A Features · Glass passivated junction. · 600W Peak Pulse Power capability at 1.0 ms. · , 1.0 |^A above 10V. - P6KE440(C)A 1.0 min (25.4) Dimensions in inches (mm) 0.300 (7.62) 0.230 , PPM IPPM T a = 2 5°C unless o th e rw ise noted Parameter Peak Pulse Power Dissipation atTA -
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P6KE220 P6KE250 P6KE300 P6KE350

A 3760

Abstract: 5KE30CA 368.0 1 482.0 3.2 5 1.5KE400(C)A 342.0 380.0 420.0 1 548.0 2.8 5 1.5KE440(C)A 376.0 418.0 462.0 1 , Discrete POWER & Signal PÃ"IRGHILD Technologies IMICONDUCTOR tm 1.5KE6.8(C)A -1.5KE440(C)A Features â'¢ Glass passivated junction. â'¢ 1500W Peak Pulse Power capability at 1.0 ms. â'¢ Excellent clamping capability. â'¢ Low incremental surge resistance. â'¢ Fast response time; typically less than 1.0 ps from 0 volts to BV for unidirectional and 5.0 ns for bidirectional. â'¢ Typical lR less than
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DO-201AE A 3760 5KE30CA 5KE30 5KE-30 5ke300 5KE18 5KE350 10/1000M

ILOIf

Abstract: MIG20J806E 23.14 kil B Value b25/85 Tc = 25°C / Tc = 85°C â'" 3760 â'" K 1999-02-18 4/4 , , Converter Power Circuits and Thermistor in One Package. Output (Inverter Stage) : 30 20 A/600 V IGBT Input (Converter Stage) : 2, 30 A/800 V Silicon Rectifier The Electrodes are Isolated from Case. Outline , 961001EAA1 â'¢ TOSHIBA is continually working to improve the quality and the reliability of its products , TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or
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MIG20J806E MIG20J806EA ILOIf mig20j MIG20J806E/EA

5KE440

Abstract: A 3760 1.5KE6.8(C)A D iscrete POWER & Sign al Technologies IM IC O N D U C TQ R tm 1.5KE6.8(C)A - 1 ,5KE440(C)A Features · Glass passivated junction. · 1500W Peak Pulse Power capability at 1.0 ms , less than 1.0 |^A above 10V. - 1.5KE440(C)A 1.0 min (25.4) Dimensions in inches (mm) 0.375 (9.525 , Symbol PPPM IPPM Pd if(surge) T a = 2 5°C unless o th e rw ise noted Parameter Peak Pulse Power Dissipation at Peak Pulse Current Steady State Power Dissipation .375 " lead length @ T a = 75°C Peak Forward
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1,5KE36 955 539 ic 5KE220 5KE250

MIG50J806E

Abstract: MIG50J806EA ITM = 0-2 mA> Tc = 25°C 17.31 20 23.14 kil B Value b25/85 Te = 25°C / Tc = 85°C â'" 3760 â'" K , , Converter Power Circuits and Thermistor in One Package. Output (Inverter Stage) : 3y5 50 A/600 V IGBT Input (Converter Stage) : 3 j> 30 A /800 V Silicon Rectifier The Electrodes are Isolated from Case , 12 o N1 4o- 9 o- 3 6 o- >U 10 o- 7 < 8o- >V 1 o Hi >W o 13 2 o 961001EAA1 â , observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA
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MIG50J806E MIG50J806EA 600VIGBT mig50j MIG50J806E/EA
Abstract: . UNIT 17.31 20 23.14 kil â'" 3760 â'" K 1999 10-22 4/9 - TO SH IBA MIG20J806H/HA (Note 1 , MIG20J806H, MIG20J806HA HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS â'¢ Integrates , . Outline MIG20J806H : 2-108E5A MIG20J806HA : 2-108E6A Weight : 190g âââââ'¢ EQUIVALENT CIRCUIT P PI 1 o 2 Q N 961001EAA2 0 0 0 T O SH IB A is co ntinu ally , lnerab ility to physical stress. It is th e responsibility o f th e buyer, w h e n utilizing T O SH IB A -
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toshiba LTM 10 C 015 K

Abstract: P channel 600v 30a IGBT lTM = 0.2mA, Tc = 25°C 17.31 20 23.14 kCl B Value b25/85 Tc = 25°C / Tc = 85°C â'" 3760 â'" K , - 5oâ'"J i: 7oâ'"J Ã" 5 6o U »V 71 8o 12 o 9 o- m Ã" 10O-Ã" ilo-'^j Ã" 1 o » w o 13 2 o , TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In , is presented only as a guide for the applications of our products. No responsibility is assumed by
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toshiba LTM 10 C 015 K P channel 600v 30a IGBT TC 30i

mig30j

Abstract: MIG30J906E °C 17.31 20 23.14 kil B Value b25/85 Tc = 25°C / Tc = 85°C â'" 3760 â'" K (Note 1) Switching Time , , Converter and Brake Power Circuits and Thermistor in One Package. Output (Inverter Stage) : 3y5 30 A/600 V IGBT Input (Converter Stage) : 3 j> 30 A /800 V Silicon Rectifier The Electrodes are Isolated from , _LL >w noâ'"'K i -o 13 1 o 2 o 961001EAA1 â'¢ TOSHIBA is continually working to improve the , to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human
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MIG30J906E MIG30J906EA MIG30J906E/EA

MIG10Q906H

Abstract: MIG10Q906HA 85°C â'" 3760 â'" K (Note 1) Switching Time Test Circuit & Timing Chart -vge Rg jâ'"W\ , Brake Power Circuits and Thermistor in One Package. Output (Inverter Stage) : 3^5 10 A/1200 V IGBT Input (Converter Stage) : 3 ^ 15 A/1600 V Silicon Rectifier The Electrodes are Isolated from Case. Outline MIG10Q906H : 2-108E5A MIG10Q906HA : 2-108E6A Weight : 190 g equivalent circuit P PI o- ä 3oâ'"J ii 5oâ'"J if 7oâ'"J "i Be 4 o- 5 6o â'¢U »V 7< 8o- 12o-'Kj 9o-'Kj ä 10o-ä no-if Â
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MIG10Q906H/HA
Abstract: "¦ 1 V 100 A 3760 Gate resistance VGS=0V, VDS=0V, f=1MHz 5640 pF 280 400 , A 10 A 8 IAS, IAR Power Dissipation B TA=70° C C TA=25° mJ 268 2.1 , Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case A 300 PD TC=100° C Power Dissipation A 45 EAS, EAR Avalanche energy L=0.3mH 1 TC=25° C Rev2: Mar 2012 78 200 IDSM TA=70° C V 100 IDM C TA=25° Continuous Drain Current Units V  Alpha & Omega Semiconductor
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AOT470/AOB470L

MIG20J806H

Abstract: MIG20J806HA '" 3760 â'" K 1999-10-22 4/9 TOSHIBA MIG20J806H/HA (Note 1) Switching Time Test Circuit & Timing Chart , - 4 o- 9o ic 5oâ'"J if 7oâ'"J "i 5 6o â'¢U 71 8o »V »W Ã" 10o-Ã" HQ-if 1 o 13 2 o , TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In , is presented only as a guide for the applications of our products. No responsibility is assumed by
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125-C
Abstract: mâ"¦ mâ"¦ S 1 V 100 A 3760 Gate resistance VGS=0V, VDS=0V, f=1MHz 5640 , C A 10 A 8 IAS, IAR Power Dissipation B TA=70° C TA=25° C mJ 268 , t ≤ 10s W 134 PDSM Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case A 300 PD TC=100° C Power Dissipation A 45 EAS, EAR Avalanche energy L=0.3mH C TC Alpha & Omega Semiconductor
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P channel 600v 30a IGBT

Abstract: MIG30J906H 23.14 kCl B Value b25/85 Tc = 25°C / Tc = 85°C â'" 3760 â'" K (Note 1) Switching Time Test Circuit , MIG30J906H : 2-108E3A MIG30J906HA : 2-108E4A Weight : 190g EQUIVALENT CIRCUIT P PI o- Bc Ã" 3oâ'"< Ã" 5oâ'"J if 7oâ'""J Ã" 4 o- 5 6o U »V 71 8o »W 12o-'Kj 9o-ä 10o-'Kl ä no-'Kl ä 13 N NI , TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In
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common cathode MIG30J906H/HA

MIG50J806H

Abstract: mig50j806 Itm = 0.2 mA, Tc = 25°C 17.31 20 23.14 kn B Value b25/85 Tc = 25°C / Tc = 85°C â'" 3760 â'" K , POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS â'¢ Integrates Inverter, Converter Power Circuits and Thermistor in One Package. â'¢ Output (Inverter Stage) : Z 50 A/600 V IGBT â'¢ Input (Converter Stage) : Z 30 A/800 V Silicon Rectifier â'¢ The Electrodes are Isolated from Case. â'¢ Outline MIG50J806H : 2-108E5A â'¢ Weight : 190 g EQUIVALENT CIRCUIT P N PI o- 71 71 71 K : 50â
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mig50j806 TOSHIBA FL INVERTER vqe 71

1-530843-4

Abstract: 1-530843-1 . Housing Dim. (Typ.)â'" 3.760 [95.50] L x .368 [9.35] W x .610 [15.49] H Notes: 1. Other connector size , Board Connectors One-Piece Printed Circuit Board Connectors (Board-to-Board) â  Maximum number of dual posi­ tions: .100 [2.54] centerlinesâ'" 70, .125 [3.18] centerlinesâ'" 50 â  Selective gold plating of con­ tacts for high performance at low cost â  .025 [0.64] square solid posts meet standard wrap-type speci­ fications â  .028 [0.71] diameter solid posts for flow solder applicaÂ
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CG907 1-530843-4 1-530843-1 E28476

MIG15Q806H

Abstract: MIG15Q806HA Resistance R25 ITM = 0.2 mA, Tc = 25°C 17.31 20 23.14 kCl B Value b25/85 Tc = 25°C / Tc = 85°C â'" 3760 â , Power Circuits and Thermistor in One Package. Output (Inverter Stage) : 3^5 15 A/1200 V IGBT Input (Converter Stage) : 3 ^ 15 A/1600 V Silicon Rectifier The Electrodes are Isolated from Case. Weight : 190 g , o- 9 o- à C 5oâ'"'J if 7oâ'"Ã" 5 6o »u 7< 8o »V » w JKj Ã" 10O-'^j Ã" HO-'kl Ã" 13 , TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or
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MIG15Q806H MIG15Q806HA MIG15Q806H/HA
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