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Zener diode 83C 12

Catalog Datasheet MFG & Type PDF Document Tags

Zener diode 83C 12

Abstract: diode zener 6V8 BZX C 55 voltage is defined by : V j = V z + 1 000 Izm The delay obtained is due to the Zener diode ca pacitor. By , Le retard obtenu est dû à la capacité de fa diode Zener. En remplaçant la résistance R - 1000 SI par , BZX83C2V4 - BZX83C75 ZENER DIODES 5 9C 0 2 4 7 4 D T ~ D ' I f D IO D E S Z E N E R P tot = 600 m W 500 mW hermetically sealed glass silicon Zener diodes offering the following advantages : · · · , < 7 5 V Diodes Zener au silicium encapsulées verre, de 500 m W offrant les avantages suivants : · ·
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OCR Scan
Zener diode 83C 12 diode zener 6V8 BZX C 55 8ZX83C BZX marking diode Zener diode 83C 24 diode zener BZX 70 C 10 Q0Q247M

BZX83B

Abstract: bzx 550 4v7 BZX83C Series Zener diode Features High reliability Applications Voltage stabilization , 8V2 9V1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 1) VZnom V 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 , VR V 1 1 1 1 1 1 1 1 1 2 3 3.5 4 5 6 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 , Voltage under Operating Conditions at Tamb=25 Figure 6. Diode Capacitance vs. Z-voltage Excel
Excel Semiconductor
Original
BZX83B bzx 550 4v7 DO-35

BZX83C

Abstract: Zener diode 83C 12 BZX83C Series Zener diode Features High reliability Applications Voltage stabilization , 8V2 9V1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 1) VZnom V 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 , , . Typical Change of Working Voltage under Operating Conditions at Tamb=25 Figure 6. Diode Capacitance vs
Excel Semiconductor
Original
BZX83-C Series BZ DO-35 bzx8 ZENER bzx83c 3v3
Abstract: BZX83C Series Zener diode Features High reliability Applications Voltage stabilization , 8V2 9V1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 1) VZnom V 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 , , . Diode Capacitance vs. Z-voltage Operating Conditions at Tamb=25â"ƒ Excel Semiconductor Excel Semiconductor
Original

83c zener

Abstract: ECUV1H102KBN 47 uF, 6.3 V cer, 0.01 uF, 50 V, 0805 cer, 0.022 uF, 50 V, 0805 Schottky, dual diode Zener diode , not running. When the converter is running normally, the flyback winding of T1 is clamped at 12 V (in , while C8 charges to 1.6 V. The ramp­up time of the output voltage will last about 1­2 ms depending on , transformer including the MOSFET drain capacitance, transformer internal capacitance and the Schottky diode , ESTOREDCRESONANT)12 ) VIN (4) 10.7 mJ660 pF)12 ) 48 V + 228 V 1 ) 75 V 1.5ms + 2.0 A 4 344mH 5. Calculate 1st
ON Semiconductor
Original
83c zener ECUV1H102KBN MBRD2060CT CS5126DEMO/D CS5126

70786

Abstract: Zener diode 83C 12 consists of three diodes, a resistor, a zener diode, a capacitor, and the start switch. When the start , combined with an external MOSFET or Schottky diode to form a reverse-blocking switch. THE SI4720CY VS , Schottky is significantly higher. A single Schottky diode carrying a current of 2 A will dissipate 0.8 W , Level Shift 12 GND1 VGS Limiter 7, 8 S1 Half a circuit shown here. FIGURE 1. Si4720CY , configurations presented. A 3-A Schottky diode is packaged in an SMD or DPAK package. The one advantage is cost
Vishay Siliconix
Original
AN810 70786 in4148 zener diode kw12-1 block diagram of schottky diode in4148 smd diode circuit diagram 4013 4720CY SO-16

germanium

Abstract: germanium transistor 1000 75°C ZENER DIODE SYMBOL CHARAC­ TERISTIC v ZT r ZT Zener Voltage @ I 2 X = , LIGHT-EMITTING DIODE DIODE KEC SEMICONDUCTOR MAXIMUM RATINGS v CEO USE lC Pc ELECTRICAL , -2 4 0 6 6 12 1 Ic (V) 0.25 -0 .3 0.25 -0 .3 - (mA) (MHz) If. (V , 2669 30 50 200 4 0 -2 4 0 12 2 0.4 10 I (100) 10 2 1 10 1 , 12 2 0.4 10 1 120 10 2 AM-RF KTC 2670 30 100 200 4 0 -2 4 0
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OCR Scan
germanium germanium transistor kia 7208 KIA 7313 I815/KTN 10I5/KTP 1923/KTN 380TM/KTN K27424

IP431

Abstract: IP431A circuit is a monolithic three terminal programmable shunt regulator diode. The voltage reference operates as a low temperature coefficient zener which is programmable between VREF (2.5V) and 36 volts , making these devices excellent replacements for zener diodes in many applications. Being a shunt , (Figure 2) Reference Input Current (Figure 2) mV/V -2 4 5.2 0.4 1.2 uA uA Reference Input Current , Package 178°C/W 114°C/W 100°C/W 83°C/W 41°C/W 38°C/W RJC Thermal Resistance, Junction ­ Case
Semelab
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IP431 IP431AM IP431AI IP431AC IP431AMJ IP431ACD

Zener diode 83C 12

Abstract: IP431ACD DIAGRAM The IP431A circuit is a monolithic three terminal programmable shunt regulator diode. The voltage reference operates as a low temperature coefficient zener which is programmable between VREF , turn-on characteristic making these devices excellent replacements for zener diodes in many applications , 0.4 1.2 uA 0.5 TA = 0 to +70°C * VKA = VREF For Regulation 4 1 mA 3 , D Package N Package J Package 83°C/W 41°C/W 38°C/W Semelab plc. Telephone (01455
Semelab
Original
IP7805 triac control 8-pin
Abstract: to r diode. The vo lta g e reference operates as a low temperature coefficient zener which is , provides a very sharp turn-on characteristic making these devices excellent replacements for zener diodes , (Figure 2) lK = 10mA AV ka = 36V to 10V R1 = 10kQ R2 = oo TA = 0 to +70°C * R2 = oo 0.4 1.2 AV ka , °c/w 83°C/W 41 °C/W 38°C/W R 0JC Thermal Resistance, Junction - Case Semelab pic -
OCR Scan

IC 7107

Abstract: IC 7106 . In the 7106, an internal digital ground is generated from a 6 volt Zener diode and a large P channel , 15:7107 with Zener diode reference. Since low T.C. zeners have breakdown voltages ~ 6.8V, diode , an instrument-size light emitting diode (LED) display. The 7106 and 7107 bring together an , If ICL7I06(LE0) JO â¡w 10 29 â¡ A/Z A 12 2C 28 â¡ BU FF F2C 13 27 â¡ IN T . E2C 14 26 â¡ V f D 15 3C 6 25 â¡ G (TEN 2 S) 83C 1 7 24 â¡ C i ^ 3 2 F3C 1 23 â¡ A3 g 1 E3C 18 9
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OCR Scan
IC 7107 IC 7106 thermometer circuit using 7107 ICL7106/ICL7107 ICL7106 ICL71 ICL7107
Abstract: 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward , -stage input protection circuit is a unique design, consisting of two stages of back-to-back zener diodes separated by a resistor. The first stage diode is designed to absorb most of the ESD energy. The second stage diode is designed to protect the gate from any remaining ESD energy and over-voltages above the , stage diode during over voltage conditions has a maximum value which limits the input current to â Vishay Siliconix
Original
6924AEDQ 2011/65/EU 2002/95/EC
Abstract: stages of back-to-back zener diodes separated by a resistor. The first stage diode is designed to absorb most of the ESD energy. The second stage diode is designed to protect the gate from any remaining ESD , Source-Drain Diode Forward Voltage www.vishay.com 4 Document Number: 72215 S-81056-Rev. B, 12 , the current through the second stage diode during over voltage conditions has a maximum value which limits the input current to 10 mA at 14 V and the maximum toff to 12 us. The Si6924AEDQ has been Vishay Siliconix
Original
Abstract: 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward , -stage input protection circuit is a unique design, consisting of two stages of back-to-back zener diodes separated by a resistor. The first stage diode is designed to absorb most of the ESD energy. The second stage diode is designed to protect the gate from any remaining ESD energy and over-voltages above the , stage diode during over voltage conditions has a maximum value which limits the input current to â Vishay Siliconix
Original
JS709A
Abstract: stages of back-to-back zener diodes separated by a resistor. The first stage diode is designed to absorb most of the ESD energy. The second stage diode is designed to protect the gate from any remaining ESD , Source-Drain Diode Forward Voltage www.vishay.com 4 Document Number: 72215 S-81056-Rev. B, 12 , the current through the second stage diode during over voltage conditions has a maximum value which limits the input current to 10 mA at 14 V and the maximum toff to 12 us. The Si6924AEDQ has been Vishay Siliconix
Original

RGK 20/1

Abstract: sanken snr . ­ PZ Power Zener diode, axial-lead . 22 CTL Center-Tap , . 12 Rectifier Diodes . 13 , . 19 Schottky Barrier Diodes . 21 Zener , TO-220/TO-3P fast-recovery rect. . 15, 16 AK Axial-lead Schottky barrier diode , high-speed rectifier . 17 GSC GaAs Schottky diode
Allegro MicroSystems
Original
RGK 20/1 sanken snr sanken power transistor 2SA1216 sac 187 triac motor driver full bridge 10A 2SC3855 SANKEN AMS-174

fet alternator regulator circuit

Abstract: MAX6397 remains off and disconnects the reversed battery from the system. The zener diode and resistor combination , area including the power traces and the return ground path. · Add a zener diode or transient , 1.827 1.854 0.12 VREG = 5V, IREG = 100mA 1.2 150 300 6.5V VIN 72V, IREG = 10mA, VREG = 5V mA 0.44 mV/V 1.2 5.5V VIN 72V, IREG = 100mA, VREG = 5V mV/mA 1.5 1mA , SUPPLY CURRENT vs. INPUT VOLTAGE VIN = 72V 110 100 VIN = 14V 32 28 24 20 16 12 20
Maxim Integrated Products
Original
MAX6397 fet alternator regulator circuit MAX6398 MAX6398ATT-T T633-2 Thermal Shut Down Functioned MOSFET MAX6397/MAX6398 MO229 T833-1 T833-2 T833-3

MAX6397

Abstract: MAX6398 remains off and disconnects the reversed battery from the system. The zener diode and resistor combination , area including the power traces and the return ground path. · Add a zener diode or transient voltage , , IREG = 100mA, VREG = 5V mV/V 1.2 150 300 VREG = 1.1 x VREG (nominal) 15 6.5V VIN , ON GATE OFF 45 35 30 20 MAX6398 GATE OFF 18 16 14 12 10 8 6 4 25 80 , 5.2 5.0 4.8 4.6 1.228 1.224 1.220 1.216 1.212 4.4 1.204 1.200 4.0 0 8 10 12
Maxim Integrated Products
Original
T1033-1 T1033-2 T1433-1 T1433-2

fet alternator regulator circuit

Abstract: overvoltage protection remains off and disconnects the reversed battery from the system. The zener diode and resistor combination , area including the power traces and the return ground path. · Add a zener diode or transient voltage , 1.837 0.12 5.5V VIN 72V, IREG = 100mA, VREG = 5V mV/V 1.2 150 300 VREG = 1.1 x VREG , 30 90 MAX6398 GATE OFF 18 16 14 12 10 8 6 4 25 80 20 MAX6397-98 toc06 , 4.8 4.6 1.228 1.224 1.220 1.216 1.212 4.4 1.204 4.0 0 8 10 12 14 16 18 20 22
Maxim Integrated Products
Original
overvoltage protection

230 volt ac overvoltage protection

Abstract: overvoltage remains off and disconnects the reversed battery from the system. The zener diode and resistor combination , area including the power traces and the return ground path. · Add a zener diode or transient voltage , , IREG = 100mA, VREG = 5V mV/V 1.2 150 300 VREG = 1.1 x VREG (nominal) 15 6.5V VIN , ON GATE OFF 45 35 30 20 MAX6398 GATE OFF 18 16 14 12 10 8 6 4 25 80 , 5.2 5.0 4.8 4.6 1.228 1.224 1.220 1.216 1.212 4.4 1.204 1.200 4.0 0 8 10 12
Maxim Integrated Products
Original
230 volt ac overvoltage protection overvoltage P-Channel Enhancement FET P-Channel Enhancement MOSFET module zener 14v diode S 170 MOSFET TRANSISTOR
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