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LM431CIZ/LFT1 Texas Instruments Adjustable Precision Zener Shunt Regulator 3-TO-92 visit Texas Instruments
TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD2E001YFPR Texas Instruments DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, DSBGA-4, Transient Suppressor visit Texas Instruments
UC1610J/883B Texas Instruments SILICON, BRIDGE RECTIFIER DIODE visit Texas Instruments
UC3612J Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments

Zener diode 83C 12

Catalog Datasheet MFG & Type PDF Document Tags

Zener diode 83C 12

Abstract: diode zener 6V8 BZX C 55 voltage is defined by : V j = V z + 1 000 Izm The delay obtained is due to the Zener diode ca pacitor. By , Le retard obtenu est dû à la capacité de fa diode Zener. En remplaçant la résistance R - 1000 SI par , BZX83C2V4 - BZX83C75 ZENER DIODES 5 9C 0 2 4 7 4 D T ~ D ' I f D IO D E S Z E N E R P tot = 600 m W 500 mW hermetically sealed glass silicon Zener diodes offering the following advantages : · · · , < 7 5 V Diodes Zener au silicium encapsulées verre, de 500 m W offrant les avantages suivants : · ·
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OCR Scan
Zener diode 83C 12 diode zener 6V8 BZX C 55 BZX marking diode 8ZX83C diode zener BZX 70 C 10 Zener diode 83C 24 Q0Q247M

BZX83B

Abstract: BZX83C BZX83C Series Zener diode Features High reliability Applications Voltage stabilization , 8V2 9V1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 1) VZnom V 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 , VR V 1 1 1 1 1 1 1 1 1 2 3 3.5 4 5 6 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 , Voltage under Operating Conditions at Tamb=25 Figure 6. Diode Capacitance vs. Z-voltage Excel
Excel Semiconductor
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BZX83B bzx 550 4v7 DO-35

BZX83C

Abstract: Zener diode 83C 12 BZX83C Series Zener diode Features High reliability Applications Voltage stabilization , 8V2 9V1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 1) VZnom V 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 , , . Typical Change of Working Voltage under Operating Conditions at Tamb=25 Figure 6. Diode Capacitance vs
Excel Semiconductor
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BZX83-C Series bzx8 BZ DO-35 ZENER bzx83c 3v3
Abstract: BZX83C Series Zener diode Features High reliability Applications Voltage stabilization , 8V2 9V1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 1) VZnom V 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 , , . Diode Capacitance vs. Z-voltage Operating Conditions at Tamb=25â"ƒ Excel Semiconductor Excel Semiconductor
Original

Zener diode 83C 12

Abstract: ECUV1H102KBN 47 µF, 6.3 V cer, 0.01 µF, 50 V, 0805 cer, 0.022 µF, 50 V, 0805 Schottky, dual diode Zener diode , not running. When the converter is running normally, the flyback winding of T1 is clamped at 12 V (in , while C8 charges to 1.6 V. The ramp­up time of the output voltage will last about 1­2 ms depending on , transformer including the MOSFET drain capacitance, transformer internal capacitance and the Schottky diode , ESTOREDCRESONANT)12 ) VIN (4) 10.7 mJ660 pF)12 ) 48 V + 228 V 1 ) 75 V 1.5ms + 2.0 A 4 344mH 5. Calculate 1st
ON Semiconductor
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ECUV1H102KBN MBRD2060CT 83c zener CS5126DEMO/D CS5126

70786

Abstract: Zener diode 83C 12 consists of three diodes, a resistor, a zener diode, a capacitor, and the start switch. When the start , combined with an external MOSFET or Schottky diode to form a reverse-blocking switch. THE SI4720CY VS , Schottky is significantly higher. A single Schottky diode carrying a current of 2 A will dissipate 0.8 W , Level Shift 12 GND1 VGS Limiter 7, 8 S1 Half a circuit shown here. FIGURE 1. Si4720CY , configurations presented. A 3-A Schottky diode is packaged in an SMD or DPAK package. The one advantage is cost
Vishay Siliconix
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AN810 70786 in4148 zener diode kw12-1 block diagram of schottky diode in4148 smd diode circuit diagram 4013 4720CY SO-16

germanium

Abstract: speaker protector 1000 75°C ZENER DIODE SYMBOL CHARAC­ TERISTIC v ZT r ZT Zener Voltage @ I 2 X = , LIGHT-EMITTING DIODE DIODE KEC SEMICONDUCTOR MAXIMUM RATINGS v CEO USE lC Pc ELECTRICAL , -2 4 0 6 6 12 1 Ic (V) 0.25 -0 .3 0.25 -0 .3 - (mA) (MHz) If. (V , 2669 30 50 200 4 0 -2 4 0 12 2 0.4 10 I (100) 10 2 1 10 1 , 12 2 0.4 10 1 120 10 2 AM-RF KTC 2670 30 100 200 4 0 -2 4 0
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OCR Scan
germanium speaker protector kia 7208 KIA 7313 germanium transistor I815/KTN 10I5/KTP 1923/KTN 380TM/KTN K27424

IP431

Abstract: IP431A circuit is a monolithic three terminal programmable shunt regulator diode. The voltage reference operates as a low temperature coefficient zener which is programmable between VREF (2.5V) and 36 volts , making these devices excellent replacements for zener diodes in many applications. Being a shunt , (Figure 2) Reference Input Current (Figure 2) mV/V -2 4 5.2 0.4 1.2 µA µA Reference Input Current , Package 178°C/W 114°C/W 100°C/W 83°C/W 41°C/W 38°C/W RJC Thermal Resistance, Junction ­ Case
Semelab
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IP431 IP431AM IP431AI IP431AC IP431AMJ IP431ACD

Zener diode 83C 12

Abstract: IP431ACD DIAGRAM The IP431A circuit is a monolithic three terminal programmable shunt regulator diode. The voltage reference operates as a low temperature coefficient zener which is programmable between VREF , turn-on characteristic making these devices excellent replacements for zener diodes in many applications , 0.4 1.2 µA 0.5 TA = 0 to +70°C * VKA = VREF For Regulation 4 1 mA 3 , D Package N Package J Package 83°C/W 41°C/W 38°C/W Semelab plc. Telephone (01455
Semelab
Original
IP7805 triac control 8-pin
Abstract: to r diode. The vo lta g e reference operates as a low temperature coefficient zener which is , provides a very sharp turn-on characteristic making these devices excellent replacements for zener diodes , (Figure 2) lK = 10mA AV ka = 36V to 10V R1 = 10kQ R2 = oo TA = 0 to +70°C * R2 = oo 0.4 1.2 AV ka , °c/w 83°C/W 41 °C/W 38°C/W R 0JC Thermal Resistance, Junction - Case Semelab pic -
OCR Scan

IC 7107

Abstract: IC 7106 . In the 7106, an internal digital ground is generated from a 6 volt Zener diode and a large P channel , 15:7107 with Zener diode reference. Since low T.C. zeners have breakdown voltages ~ 6.8V, diode , an instrument-size light emitting diode (LED) display. The 7106 and 7107 bring together an , If ICL7I06(LE0) JO â¡w 10 29 â¡ A/Z A 12 2C 28 â¡ BU FF F2C 13 27 â¡ IN T . E2C 14 26 â¡ V f D 15 3C 6 25 â¡ G (TEN 2 S) 83C 1 7 24 â¡ C i ^ 3 2 F3C 1 23 â¡ A3 g 1 E3C 18 9
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IC 7107 IC 7106 thermometer circuit using 7107 ICL7106/ICL7107 ICL7106 ICL71 ICL7107
Abstract: 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward , -stage input protection circuit is a unique design, consisting of two stages of back-to-back zener diodes separated by a resistor. The first stage diode is designed to absorb most of the ESD energy. The second stage diode is designed to protect the gate from any remaining ESD energy and over-voltages above the , stage diode during over voltage conditions has a maximum value which limits the input current to â Vishay Siliconix
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6924AEDQ 2011/65/EU 2002/95/EC
Abstract: stages of back-to-back zener diodes separated by a resistor. The first stage diode is designed to absorb most of the ESD energy. The second stage diode is designed to protect the gate from any remaining ESD , Source-Drain Diode Forward Voltage www.vishay.com 4 Document Number: 72215 S-81056-Rev. B, 12 , the current through the second stage diode during over voltage conditions has a maximum value which limits the input current to 10 mA at 14 V and the maximum toff to 12 µs. The Si6924AEDQ has been Vishay Siliconix
Original
Abstract: 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward , -stage input protection circuit is a unique design, consisting of two stages of back-to-back zener diodes separated by a resistor. The first stage diode is designed to absorb most of the ESD energy. The second stage diode is designed to protect the gate from any remaining ESD energy and over-voltages above the , stage diode during over voltage conditions has a maximum value which limits the input current to â Vishay Siliconix
Original
JS709A
Abstract: stages of back-to-back zener diodes separated by a resistor. The first stage diode is designed to absorb most of the ESD energy. The second stage diode is designed to protect the gate from any remaining ESD , Source-Drain Diode Forward Voltage www.vishay.com 4 Document Number: 72215 S-81056-Rev. B, 12 , the current through the second stage diode during over voltage conditions has a maximum value which limits the input current to 10 mA at 14 V and the maximum toff to 12 µs. The Si6924AEDQ has been Vishay Siliconix
Original

RGK 20/1

Abstract: sanken snr . ­ PZ Power Zener diode, axial-lead . 22 CTL Center-Tap , . 12 Rectifier Diodes . 13 , . 19 Schottky Barrier Diodes . 21 Zener , TO-220/TO-3P fast-recovery rect. . 15, 16 AK Axial-lead Schottky barrier diode , high-speed rectifier . 17 GSC GaAs Schottky diode
Allegro MicroSystems
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RGK 20/1 sanken snr sanken power transistor 2SA1216 sac 187 triac motor driver full bridge 10A 2SC3855 SANKEN AMS-174

Thermal Shut Down Functioned MOSFET

Abstract: fet alternator regulator circuit remains off and disconnects the reversed battery from the system. The zener diode and resistor combination , area including the power traces and the return ground path. · Add a zener diode or transient , 1.827 1.854 0.12 VREG = 5V, IREG = 100mA 1.2 150 300 6.5V VIN 72V, IREG = 10mA, VREG = 5V mA 0.44 mV/V 1.2 5.5V VIN 72V, IREG = 100mA, VREG = 5V mV/mA 1.5 1mA , SUPPLY CURRENT vs. INPUT VOLTAGE VIN = 72V 110 100 VIN = 14V 32 28 24 20 16 12 20
Maxim Integrated Products
Original
MAX6397 Thermal Shut Down Functioned MOSFET fet alternator regulator circuit MAX6398 MAX6398ATT-T T633-2 MAX6397/MAX6398 MO229 T833-1 T833-2 T833-3

MAX6397

Abstract: MAX6398 remains off and disconnects the reversed battery from the system. The zener diode and resistor combination , area including the power traces and the return ground path. · Add a zener diode or transient voltage , , IREG = 100mA, VREG = 5V mV/V 1.2 150 300 VREG = 1.1 x VREG (nominal) 15 6.5V VIN , ON GATE OFF 45 35 30 20 MAX6398 GATE OFF 18 16 14 12 10 8 6 4 25 80 , 5.2 5.0 4.8 4.6 1.228 1.224 1.220 1.216 1.212 4.4 1.204 1.200 4.0 0 8 10 12
Maxim Integrated Products
Original
T1033-1 T1033-2 T1433-1 T1433-2

fet alternator regulator circuit

Abstract: overvoltage protection remains off and disconnects the reversed battery from the system. The zener diode and resistor combination , area including the power traces and the return ground path. · Add a zener diode or transient voltage , 1.837 0.12 5.5V VIN 72V, IREG = 100mA, VREG = 5V mV/V 1.2 150 300 VREG = 1.1 x VREG , 30 90 MAX6398 GATE OFF 18 16 14 12 10 8 6 4 25 80 20 MAX6397-98 toc06 , 4.8 4.6 1.228 1.224 1.220 1.216 1.212 4.4 1.204 4.0 0 8 10 12 14 16 18 20 22
Maxim Integrated Products
Original
overvoltage protection

230 volt ac overvoltage protection

Abstract: overvoltage remains off and disconnects the reversed battery from the system. The zener diode and resistor combination , area including the power traces and the return ground path. · Add a zener diode or transient voltage , , IREG = 100mA, VREG = 5V mV/V 1.2 150 300 VREG = 1.1 x VREG (nominal) 15 6.5V VIN , ON GATE OFF 45 35 30 20 MAX6398 GATE OFF 18 16 14 12 10 8 6 4 25 80 , 5.2 5.0 4.8 4.6 1.228 1.224 1.220 1.216 1.212 4.4 1.204 1.200 4.0 0 8 10 12
Maxim Integrated Products
Original
230 volt ac overvoltage protection overvoltage P-Channel Enhancement FET P-Channel Enhancement MOSFET module AC INRUSH CURRENT LIMITER
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