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ZY 20 DIODE

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Abstract: '" Gemessen mit Impulsen 3 ) The ZY 1 is a diode, operated in forward. The cathode, indicated by a ring, is to be connected to the negative pole. Die ZY 1 ist eine in Durchlaà betriebene Einzelchip-Diode. Die durch den Ring gekennzeichnete Kathode ist mit dem Minuspol zu verbinden. 10.07.2001 1 ZY 1 , ZY 6.2 ZY 6.8 ZY 7.5 ZY 8.2 ZY 9.1 ZY 10 ZY 11 ZY 12 ZY 13 ZY 15 ZY 16 ZY 18 ZY 20 ZY 22 , ZY 1â'¦ZY 200 (2 W) Silicon-Power-Z-Diodes Silizium-Leistungs-Z-Dioden Maximum power Diotec
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diode 6a11 DO-41 DO-204AL UL94V-0 150LC 175LC
Abstract: Umgebungstemperatur gehalten werden 2 ) Tested with pulses ­ Gemessen mit Impulsen 3 ) The ZY 1 is a diode , 105 ZY 18 16.8 19.1 25 6 ( 10 94 ZY 20 18.8 21.2 25 , ) +6.+11 > 17 47 ZY 39 37 41 10 20 ( 20 44 ZY 43 40 46 10 24 ( 20 39 ZY 47 44 50 10 24 ( , ) +8.+13 > 34 23 ZY 82 77 88 10 30 ( 41 20 ZY 91 85 SEMIKRON
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diode zy zy diode zy zener 150/C 175/C
Abstract: Umgebungstemperatur gehalten werden 2 ) Tested with pulses ­ Gemessen mit Impulsen 3 ) The ZY 1 is a diode, operated in forward. The cathode, indicated by a ring, is to be connected to the negative pole. Die ZY 1 , ZY 12 ZY 13 ZY 15 ZY 16 ZY 18 ZY 20 ZY 22 ZY 24 ZY 27 ZY 30 ZY 33 ZY 36 ZY 39 ZY 43 ZY , ZY 1.ZY 200 (2 W) Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden , dem Minuspol zu verbinden. 214 28.02.2002 ZY 1 . ZY 200 (2 W) Maximum ratings Type Typ Diotec
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Dioden Tabelle
Abstract: 23 20 19 17 16 14 13 12 11 9 8 ZY 1 3) ZY 3.9 ZY 4.3 ZY 4.7 ZY 5.1 ZY 5.6 ZY 6.2 ZY 6.8 ZY 7.5 ZY 8.2 ZY 9.1 ZY 10 ZY 11 ZY 12 ZY 13 ZY 15 ZY 16 ZY 18 ZY 20 ZY 22 ZY 24 ZY 27 ZY 30 ZY 33 ZY 36 ZY 39 , ZY 1.ZY 200 (2 W) Silicon-Power-Z-Diodes Silizium-Leistungs-Z-Dioden Maximum power dissipation , Gehäuse auf Umgebungstemperatur gehalten werden 2 ) Tested with pulses ­ Gemessen mit Impulsen 3 ) The ZY 1 is a diode, operated in forward. The cathode, indicated by a ring, is to be connected to the SEMIKRON
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ZY18 10-4/LC
Abstract: Gate/Cathode twin plugs with wire length = 350 mm; gate = yellow, cathode = red Type ZY 180 L (L = Left for pin pair 4/5) Type ZY 180 R (R = Right for pin pair 6/7) For module-types MCC/MCD/MDD 220, 250, 310 Threaded spacer for higher Anode / Cathode construction: Type ZY 250 (material brass) - 20 , Optional accessories for Thyristor/Diode Modules For module-types MCC 19, 26, 44, 56,72, 94 and , Type ZY 200 L (L = Left for pin pair 4/5) Type ZY 200 R (R = Right for pin pair 6/7) For both types: UL -
OCR Scan
Abstract: temperature at a distance of 10 mm from case. 2) Tested with pulses tp = 20 ms. 3) The ZY1 is a silicon diode , 20 10 ZY. ZY 15 ZY 18 25 °C ZY2 2 ZY 27 , ZH 82 _ Tes Cur rent IZJ 10 m Ik ZY 00 ZY 20 , ) +8. +13 10 >57.1 20 ZY75 70. 79 30 (63.2 18 ZY82 77. 88 30 ( , . ZY200S Breakdown characteristics Tj = constant (pulsed) mA 240 200 r 160 120 80 ¿0 ZY. ZY1 -
OCR Scan
ZY200 ZY1S 58A2 ZY13 ZY16 ZY15
Abstract: 1 1 ZY 47 1 1 10 m^ 1 1 1 / i A / ) 0 10 20 , ZY11 - ZY200 SILICON POWER ZENER DIODE I T D DO-41 Dim Min Max A 25.4 â'" B 4.1 5.2 C 0.71 0.86 D 2.0 2.7 All Dimensions in mm VISHAY /LITEMSI' f POWERSEMICONDUCTOR / Features 2 , 47.3 25 ZY62 58 - 66 10 80 +8 . +13 51.7 21 ZY68 64-72 10 80 +8 . +13 57.1 20 ZY75 70 - 79 10 , of 10mm from case. 2. Tested with pulses tp = 20 ms. DS21406 Rev. E-3 2 of 3 ZY11-ZY200 -
OCR Scan
10 watt zener diode ZY12 ZENER DIODE Marking ZY ZY marking ZY11 10 watts zener diode MIL-STD-202
Abstract: 110 '9 8 90 80 72 66 60 53 48 44 40 37 33 30 27 25 21 20 18 16 15 13 12 11 10 9 8.5 8 Izr niA Z Y 11 Z Y 12 Z Y 13 ZY 1S Z Y 16 Z Y 18 Z Y 20 Z Y 22 Z Y 24 Z Y 27 Z Y 30 Z Y 33 Z Y 36 Z Y 39 Z Y 43 ZY 47 ZY S1 ZY 56 Z Y 62 Z Y 68 Z Y 75 Z Y 82 Z Y 91 Z Y 100 Z Y 110 Z Y 120 Z Y 130 Z Y 150 , is a silicon diode operated in forward direction. Hence, the index o f all parameters ratings should , Breakdown characteristics Tj = constant (puted) mA 240 ZY. ^=25 C 200 160 120 ZY11 ZY12 -
OCR Scan
iz 220 zy 06 ZY221
Abstract: SEC ELECTRON DEVICE 500mw ZENER DIODE B Z Y 8 8 -C 2 V 7 -B Z Y 8 8 -C 3 3 NEC Type BZY88- Series are DHD (Double Heatsink Diode) construction planar type zener diodes possessing an allowable , Diode) Construction. · Planar process. · D035 Glass sealed package. APPLICATIONS Circuits for , e p t at a m bient tem p era ture a t a distance o f Sm m fro m case. B ZY 8 8 -C 2 V 7 ~ B ZY 8 , Max. 83 90 90 90 90 90 78 60 40 10 8 7 7 10 15 20 20 25 30 40 50 50 55 80 80 80 80 D yn am ic Knee -
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zener diode bzy88 bzy88 diod c22 zener diode BZ 320 BZY88 diode diod c16
Abstract: Certified Manufacturer SILICON POWER 2.0 WATT ZENER DIODE ZY9.1V TO ZY12V DO- 41 Glass Axial Package Low Power General Purpose Voltage Regulator Diode ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL VALUE Ptot * Power Dissipation @ 2.0 Tamb=25ºC Tj Junction , =1KHz (MAX) VZ( V) (mA) VR (V) IZ (mA) vz10 -4/K ZY 9.1 ZY 10 ZY 11 ZY 12 8.5-9.6 9.4-10.6 , . 0 85.0 mm TAPES LABEL 2 55 73 .5 .0 m m DO-41:- 2500 pcs./Ammo Pack DIODE Continental Device India
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zy 406 Diode case DO41 C-120 1N4150R
Abstract: 60 40 20 I I 0 0 10 20 I, lead length (mm.) 30 35 ZY BREAKDOWN , ZY 1. ZY 200 2 W Zener Diodes Dimensions in mm. DO-15 (Plastic) Voltage 1 to 200 V Power 2.0 W 6.35 ± 0.2 58.5 min. Mounting instructions 1. Min. distance from body to , resistance at: 10 mm. lead length 1.1 V 60 ° C/W ZY (2) ZY1 ZY10 ZY11 ZY12 ZY13 ZY15 , 14 17 17 20 20 24 24 28 28 34 34 41 41 50 50 60 60 75 75 90 90 1000 145 135 Fagor
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ZY150 ZY10 zener 212 zy47 zener ZY24 ZY22 ZY20 ZY100 ZY110 ZY120 ZY130 ZY160
Abstract: 60 40 20 I I 0 0 10 20 I, lead length (mm.) 30 35 ZY BREAKDOWN , ZY 1. ZY 200 2 W Zener Diodes Dimensions in mm. DO-15 (Plastic) Voltage 1 to 200 V Power 2.0 W 6.35 ± 0.2 58.5 min. Mounting instructions 1. Min. distance from body to , resistance at: 10 mm. lead length 1.1 V 60 ° C/W ZY (2) ZY1 ZY10 ZY11 ZY12 ZY13 ZY15 , 14 17 17 20 20 24 24 28 28 34 34 41 41 50 50 60 60 75 75 90 90 1000 145 135 -
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Zener Diode zy12 ZY19 ZY-15 ZY33 ZENER DIODE with Iz max Iz min ZY82 ZY180
Abstract: ZY11 - ZY200 SILICON POWER ZENER DIODE t VISHAY /litem? l'i / POWER SEMICONDUCTOR , '" B 4.1 5.2 C 0.71 0.86 D 2.0 2.7 All Dimensions in mm Maximum Ratings @ Ta = 25° C unless , 66 10 80 +8 . . +13 51.7 21 ZY68 64 - 72 10 80 +8 . . +13 57.1 20 ZY75 70 - 79 10 100 +8 . . +13 , from case. 2. Tested with pulses tp = 20 ms. DS21406 Rev. E 2 of 3 This Material Copyrighted By Its , ZY 12 Tes t Cu 50 m I rren A 1 -
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iY22 Zener Diode LF marking
Abstract: MCC 95 MCD 95 Thyristor Modules Thyristor/Diode Modules VRSM VDSM VRRM VDRM Type V , (50 Hz) t = 8.3 ms (60 Hz) 20 000 19 100 A2s A2s 150 500 A/us 1000 V/us 10 , (M5) Weight Typical including screws Data according to IEC 60747 and refer to a single diode , = 0.45 A/us TVJ = 25°C 2 us tq VD = /3 VDRM dv/dt = 20 V/us; -di/dt = 10 A/us IT = , , cathode = red Type ZY 200L (L = Left for pin pair 4/5) UL 758, style 1385, Type ZY 200R (R = Right IXYS
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MCC95 io1B io8B IXYS MCD 95-16 IO8B mcc95 16 101 IXYS MCC 95-12 IXYS MCD 95-08 io8b MCD95
Abstract: Thyristor/Diode Modules 3 VRSM VDSM VRRM VDRM Type V 900 1300 1500 1700 1900 V 800 , Hz) 25 300 23 900 t = 10 ms t = 8.3 ms (50 Hz) (60 Hz) 20 000 19 100 A2s A2s , including screws Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS , /cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red Type ZY 200L (L = Left for pin pair 4/5) UL 758, style 1385, Type ZY 200R (R = Right for pin pair 6/7) CSA class 5851, guide IXYS
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IXYS MCC 95-12 io8B ixys mcc 132 12 IXYS MCd 95-12 IO8B
Abstract: 56 72 94 95 E2-6 E2-10 E2-12 E2-16 E2-20 E2-24 E2-26 Thyristor/Diode Modules 6 , Thyristor and Thyristor/Diode Modules Contents 2000 Type Page 2200 1600 1800 , MCC MCC MCC MCC MCC MCC MCC 19 26 44 56 72 94 95 E2-2 E2-6 E2-12 E2-16 E2-20 E2 , 0.45 A/us 2 us tq TVJ = TVJM; IT = 20 A, tP = 200 us; -di/dt = 10 A/us VR = 100 V; dv/dt = 20 V/us; VD = 2/3 VDRM 150 5: PGM = TVJ = TVJM; IT = 25 A, -di/dt = 0.64 A/us 50 6 uC IXYS
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MCC72 HIGH VOLTAGE THYRISTOR THYRISTOR MODULE IXYS MCC 310-14io1 162-16io1 IXYS MCC 162 THYRISTOR MODULE MCC 25 ixys mcc 26-16io1 E2-20 E2-30 E2-34 E2-36 E2-40 E2-44
Abstract: noted) Breakdown characteristics T ]= constant (pUsed) mA 20 T/ = ; Y56 25°( ZY. - 2 Y68 este 1 10 o c tlz i l ZY 32 I I I ZY1 00 ZY1 20 5 n lA | ZY1 r SO ¿Y1 B0 " 7 ] ra w 1 , Range Ptot Rbja Ti Ts Symbol (Ta = 25°C unless otherwise noted) Value Unit 2.0(1> 60(1> 150 , 27 25 21 20 18 16 15 13 12 11 10 9 8.5 8 7.5 N otes: (1) Valid provided that leads are kept at , silicon diode operated in forward direction. Hence, the index of all parameters ratings should be "P -
OCR Scan
zener 245 zener diode 20w D0-204AM
Abstract: (< 80) +8 . +13 10 > 57.1 20 ZY75 70 . 79 30 (< 100) +8 . +13 10 , distance of 10 m m from case (2) Tested w ith pulses tp = 5 ms (3) The ZY1 is a silicon diode operated in , characteristics Tj = constant (pulsed) mA 240 ZY. T 25°C j= 200 Iz 1 160 120 ZY11 ZY12 , (pulsed) mA ZY. Y z v G eneral S e m ic o n i Breakdown characteristics Ty= constant (pulsed) mA ZY. V 25 °( 2Y56 2Y68 ZYI32 Testcurrent /- 10 m ZY100 - ZY120 -
OCR Scan
Abstract: : Type ZY 250, material brass 20 12 14 2002 POWERSEM reserves the right to change limits , Thyristor Modules Thyristor/Diode Modules PSKT 310 PSKH 310 Preliminary Data Sheet ITRMS , tP = 30 us tP = 500 us A/us 120 60 20 PGM TVJ = TVJM IT = ITAVM 100 5 4 2 , circuits Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated , , Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 Symbol Test POWERSEM
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Abstract: MCD Threaded spacer for higher Anode/ Cathode construction: Type ZY 250, material brass 20 , Thyristor/Diode Modules 3 VRSM VDSM VRRM VDRM V V 900 1300 1500 1700 1900 800 , 60 20 W W W VRGM 10 V TVJ TVJM Tstg -40.+140 140 -40.+125 °C °C °C , /106-132 Nm/lb.in. 320 g Data according to IEC 60747 and refer to a single thyristor/diode unless , a Characteristic Values thyristor/diode; DC current module thyristor/diode; DC current IXYS
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250-14io1 mcc 250 thyristor 250-16io1 2x450 THYRISTOR MODULE IXYS MCC 250
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