500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD2E001YFPR Texas Instruments DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, DSBGA-4, Transient Suppressor visit Texas Instruments
UC1610J/883B Texas Instruments SILICON, BRIDGE RECTIFIER DIODE visit Texas Instruments
UC3612DP Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments
UC3612J Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments

ZY 20 DIODE

Catalog Datasheet MFG & Type PDF Document Tags

ZY 20 DIODE

Abstract: diode 6a11 '" Gemessen mit Impulsen 3 ) The ZY 1 is a diode, operated in forward. The cathode, indicated by a ring, is to be connected to the negative pole. Die ZY 1 ist eine in Durchlaà betriebene Einzelchip-Diode. Die durch den Ring gekennzeichnete Kathode ist mit dem Minuspol zu verbinden. 10.07.2001 1 ZY 1 , ZY 6.2 ZY 6.8 ZY 7.5 ZY 8.2 ZY 9.1 ZY 10 ZY 11 ZY 12 ZY 13 ZY 15 ZY 16 ZY 18 ZY 20 ZY 22 , ZY 1â'¦ZY 200 (2 W) Silicon-Power-Z-Diodes Silizium-Leistungs-Z-Dioden Maximum power
Diotec
Original

ZY 20 DIODE

Abstract: diode zy Umgebungstemperatur gehalten werden 2 ) Tested with pulses ­ Gemessen mit Impulsen 3 ) The ZY 1 is a diode , 105 ZY 18 16.8 19.1 25 6 ( 10 94 ZY 20 18.8 21.2 25 , ) +6.+11 > 17 47 ZY 39 37 41 10 20 ( 20 44 ZY 43 40 46 10 24 ( 20 39 ZY 47 44 50 10 24 ( , ) +8.+13 > 34 23 ZY 82 77 88 10 30 ( 41 20 ZY 91 85
SEMIKRON
Original

ZY 20 DIODE

Abstract: zy zener Umgebungstemperatur gehalten werden 2 ) Tested with pulses ­ Gemessen mit Impulsen 3 ) The ZY 1 is a diode, operated in forward. The cathode, indicated by a ring, is to be connected to the negative pole. Die ZY 1 , ZY 12 ZY 13 ZY 15 ZY 16 ZY 18 ZY 20 ZY 22 ZY 24 ZY 27 ZY 30 ZY 33 ZY 36 ZY 39 ZY 43 ZY , ZY 1.ZY 200 (2 W) Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden , dem Minuspol zu verbinden. 214 28.02.2002 ZY 1 . ZY 200 (2 W) Maximum ratings Type Typ
Diotec
Original

ZY 20 DIODE

Abstract: ZY18 23 20 19 17 16 14 13 12 11 9 8 ZY 1 3) ZY 3.9 ZY 4.3 ZY 4.7 ZY 5.1 ZY 5.6 ZY 6.2 ZY 6.8 ZY 7.5 ZY 8.2 ZY 9.1 ZY 10 ZY 11 ZY 12 ZY 13 ZY 15 ZY 16 ZY 18 ZY 20 ZY 22 ZY 24 ZY 27 ZY 30 ZY 33 ZY 36 ZY 39 , ZY 1.ZY 200 (2 W) Silicon-Power-Z-Diodes Silizium-Leistungs-Z-Dioden Maximum power dissipation , Gehäuse auf Umgebungstemperatur gehalten werden 2 ) Tested with pulses ­ Gemessen mit Impulsen 3 ) The ZY 1 is a diode, operated in forward. The cathode, indicated by a ring, is to be connected to the
SEMIKRON
Original

ZY 20 DIODE

Abstract: Gate/Cathode twin plugs with wire length = 350 mm; gate = yellow, cathode = red Type ZY 180 L (L = Left for pin pair 4/5) Type ZY 180 R (R = Right for pin pair 6/7) For module-types MCC/MCD/MDD 220, 250, 310 Threaded spacer for higher Anode / Cathode construction: Type ZY 250 (material brass) - 20 , Optional accessories for Thyristor/Diode Modules For module-types MCC 19, 26, 44, 56,72, 94 and , Type ZY 200 L (L = Left for pin pair 4/5) Type ZY 200 R (R = Right for pin pair 6/7) For both types: UL
-
OCR Scan

ZY1S

Abstract: 58A2 temperature at a distance of 10 mm from case. 2) Tested with pulses tp = 20 ms. 3) The ZY1 is a silicon diode , 20 10 ZY. ZY 15 ZY 18 25 °C ZY2 2 ZY 27 , ZH 82 _ Tes Cur rent IZJ 10 m Ik ZY 00 ZY 20 , ) +8. +13 10 >57.1 20 ZY75 70. 79 30 (63.2 18 ZY82 77. 88 30 ( , . ZY200S Breakdown characteristics Tj = constant (pulsed) mA 240 200 r 160 120 80 ¿0 ZY. ZY1
-
OCR Scan
ZY200 ZY1S 58A2 ZY 20 DIODE diode zy ZY13 zy zener DO-41

ZY12

Abstract: 10 watt zener diode 1 1 ZY 47 1 1 10 m^ 1 1 1 / i A / ) 0 10 20 , ZY11 - ZY200 SILICON POWER ZENER DIODE I T D DO-41 Dim Min Max A 25.4 â'" B 4.1 5.2 C 0.71 0.86 D 2.0 2.7 All Dimensions in mm VISHAY /LITEMSI' f POWERSEMICONDUCTOR / Features 2 , 47.3 25 ZY62 58 - 66 10 80 +8 . +13 51.7 21 ZY68 64-72 10 80 +8 . +13 57.1 20 ZY75 70 - 79 10 , of 10mm from case. 2. Tested with pulses tp = 20 ms. DS21406 Rev. E-3 2 of 3 ZY11-ZY200
-
OCR Scan
ZY12 10 watt zener diode ZY150 ZY11 ZY15 ZY marking MIL-STD-202

iz 220

Abstract: ZY221 110 '9 8 90 80 72 66 60 53 48 44 40 37 33 30 27 25 21 20 18 16 15 13 12 11 10 9 8.5 8 Izr niA Z Y 11 Z Y 12 Z Y 13 ZY 1S Z Y 16 Z Y 18 Z Y 20 Z Y 22 Z Y 24 Z Y 27 Z Y 30 Z Y 33 Z Y 36 Z Y 39 Z Y 43 ZY 47 ZY S1 ZY 56 Z Y 62 Z Y 68 Z Y 75 Z Y 82 Z Y 91 Z Y 100 Z Y 110 Z Y 120 Z Y 130 Z Y 150 , is a silicon diode operated in forward direction. Hence, the index o f all parameters ratings should , Breakdown characteristics Tj = constant (puted) mA 240 ZY. ^=25 C 200 160 120 ZY11 ZY12
-
OCR Scan
iz 220 ZY221 zy 06

zener diode bzy88

Abstract: bzy88 SEC ELECTRON DEVICE 500mw ZENER DIODE B Z Y 8 8 -C 2 V 7 -B Z Y 8 8 -C 3 3 NEC Type BZY88- Series are DHD (Double Heatsink Diode) construction planar type zener diodes possessing an allowable , Diode) Construction. · Planar process. · D035 Glass sealed package. APPLICATIONS Circuits for , e p t at a m bient tem p era ture a t a distance o f Sm m fro m case. B ZY 8 8 -C 2 V 7 ~ B ZY 8 , Max. 83 90 90 90 90 90 78 60 40 10 8 7 7 10 15 20 20 25 30 40 50 50 55 80 80 80 80 D yn am ic Knee
-
OCR Scan
zener diode bzy88 bzy88 diod c22 zener diode BZ 320 BZY88 diode diod c16

zy 406

Abstract: ZY 20 DIODE Certified Manufacturer SILICON POWER 2.0 WATT ZENER DIODE ZY9.1V TO ZY12V DO- 41 Glass Axial Package Low Power General Purpose Voltage Regulator Diode ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL VALUE Ptot * Power Dissipation @ 2.0 Tamb=25ºC Tj Junction , =1KHz (MAX) VZ( V) (mA) VR (V) IZ (mA) vz10 -4/K ZY 9.1 ZY 10 ZY 11 ZY 12 8.5-9.6 9.4-10.6 , . 0 85.0 mm TAPES LABEL 2 55 73 .5 .0 m m DO-41:- 2500 pcs./Ammo Pack DIODE
Continental Device India
Original
zy 406 Diode case DO41 C-120 1N4150R

Zener Diode zy12

Abstract: ZY10 60 40 20 I I 0 0 10 20 I, lead length (mm.) 30 35 ZY BREAKDOWN , ZY 1. ZY 200 2 W Zener Diodes Dimensions in mm. DO-15 (Plastic) Voltage 1 to 200 V Power 2.0 W 6.35 ± 0.2 58.5 min. Mounting instructions 1. Min. distance from body to , resistance at: 10 mm. lead length 1.1 V 60 ° C/W ZY (2) ZY1 ZY10 ZY11 ZY12 ZY13 ZY15 , 14 17 17 20 20 24 24 28 28 34 34 41 41 50 50 60 60 75 75 90 90 1000 145 135
-
Original
Zener Diode zy12 ZY10 ZY18 ZY19 ZY-15 ZY33 ZY100 ZY110 ZY120 ZY130 ZY160 ZY180

ZY15

Abstract: ZY10 60 40 20 I I 0 0 10 20 I, lead length (mm.) 30 35 ZY BREAKDOWN , ZY 1. ZY 200 2 W Zener Diodes Dimensions in mm. DO-15 (Plastic) Voltage 1 to 200 V Power 2.0 W 6.35 ± 0.2 58.5 min. Mounting instructions 1. Min. distance from body to , resistance at: 10 mm. lead length 1.1 V 60 ° C/W ZY (2) ZY1 ZY10 ZY11 ZY12 ZY13 ZY15 , 14 17 17 20 20 24 24 28 28 34 34 41 41 50 50 60 60 75 75 90 90 1000 145 135
Fagor
Original
zener 212 ZY16 ZY20 ZY22 ZY24 2W Zener

iY22

Abstract: Zener Diode LF marking ZY11 - ZY200 SILICON POWER ZENER DIODE t VISHAY /litem? l'i / POWER SEMICONDUCTOR , '" B 4.1 5.2 C 0.71 0.86 D 2.0 2.7 All Dimensions in mm Maximum Ratings @ Ta = 25° C unless , 66 10 80 +8 . . +13 51.7 21 ZY68 64 - 72 10 80 +8 . . +13 57.1 20 ZY75 70 - 79 10 100 +8 . . +13 , from case. 2. Tested with pulses tp = 20 ms. DS21406 Rev. E 2 of 3 This Material Copyrighted By Its , ZY 12 Tes t Cu 50 m I rren A 1
-
OCR Scan
iY22 Zener Diode LF marking zy47 zener

io1B

Abstract: io8B MCC 95 MCD 95 Thyristor Modules Thyristor/Diode Modules VRSM VDSM VRRM VDRM Type V , (50 Hz) t = 8.3 ms (60 Hz) 20 000 19 100 A2s A2s 150 500 A/µs 1000 V/µs 10 , (M5) Weight Typical including screws Data according to IEC 60747 and refer to a single diode , = 0.45 A/µs TVJ = 25°C 2 µs tq VD = /3 VDRM dv/dt = 20 V/µs; -di/dt = 10 A/µs IT = , , cathode = red Type ZY 200L (L = Left for pin pair 4/5) UL 758, style 1385, Type ZY 200R (R = Right
IXYS
Original
MCC95 io1B io8B IXYS MCD 95-16 IO8B mcc95 16 101 IXYS MCC 95-12 IXYS MCD 95-08 io8b MCD95

IXYS MCC 95-12 io8B

Abstract: IXYS MCD 95-08 io8b Thyristor/Diode Modules 3 VRSM VDSM VRRM VDRM Type V 900 1300 1500 1700 1900 V 800 , Hz) 25 300 23 900 t = 10 ms t = 8.3 ms (50 Hz) (60 Hz) 20 000 19 100 A2s A2s , including screws Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS , /cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red Type ZY 200L (L = Left for pin pair 4/5) UL 758, style 1385, Type ZY 200R (R = Right for pin pair 6/7) CSA class 5851, guide
IXYS
Original
IXYS MCC 95-12 io8B ixys mcc 132 12 IXYS MCd 95-12 IO8B

HIGH VOLTAGE THYRISTOR

Abstract: THYRISTOR MODULE IXYS MCC 310-14io1 56 72 94 95 E2-6 E2-10 E2-12 E2-16 E2-20 E2-24 E2-26 Thyristor/Diode Modules 6 , Thyristor and Thyristor/Diode Modules Contents 2000 Type Page 2200 1600 1800 , MCC MCC MCC MCC MCC MCC MCC 19 26 44 56 72 94 95 E2-2 E2-6 E2-12 E2-16 E2-20 E2 , 0.45 A/µs 2 µs tq TVJ = TVJM; IT = 20 A, tP = 200 µs; -di/dt = 10 A/µs VR = 100 V; dv/dt = 20 V/µs; VD = 2/3 VDRM 150 5: PGM = TVJ = TVJM; IT = 25 A, -di/dt = 0.64 A/µs 50 6 µC
IXYS
Original
MCC72 HIGH VOLTAGE THYRISTOR THYRISTOR MODULE IXYS MCC 310-14io1 162-16io1 THYRISTOR MODULE MCC 25 IXYS MCC 162 ixys mcc 26-16io1 E2-20 E2-30 E2-34 E2-36 E2-40 E2-44

zener 245

Abstract: ZY43 noted) Breakdown characteristics T ]= constant (pUsed) mA 20 T/ = ; Y56 25°( ZY. - 2 Y68 este 1 10 o c tlz i l ZY 32 I I I ZY1 00 ZY1 20 5 n lA | ZY1 r SO ¿Y1 B0 " 7 ] ra w 1 , Range Ptot Rbja Ti Ts Symbol (Ta = 25°C unless otherwise noted) Value Unit 2.0(1> 60(1> 150 , 27 25 21 20 18 16 15 13 12 11 10 9 8.5 8 7.5 N otes: (1) Valid provided that leads are kept at , silicon diode operated in forward direction. Hence, the index of all parameters ratings should be "P
-
OCR Scan
zener 245 ZY43 zener diode 20w D0-204AM
Abstract: (< 80) +8 . +13 10 > 57.1 20 ZY75 70 . 79 30 (< 100) +8 . +13 10 , distance of 10 m m from case (2) Tested w ith pulses tp = 5 ms (3) The ZY1 is a silicon diode operated in , characteristics Tj = constant (pulsed) mA 240 ZY. T 25°C j= 200 Iz 1 160 120 ZY11 ZY12 , (pulsed) mA ZY. Y z v G eneral S e m ic o n i Breakdown characteristics Ty= constant (pulsed) mA ZY. V 25 °( 2Y56 2Y68 ZYI32 Testcurrent /- 10 m ZY100 - ZY120 -
OCR Scan

PSKT 310

Abstract: ZY 20 DIODE : Type ZY 250, material brass 20 12 14 2002 POWERSEM reserves the right to change limits , Thyristor Modules Thyristor/Diode Modules PSKT 310 PSKH 310 Preliminary Data Sheet ITRMS , tP = 30 µs tP = 500 µs A/µs 120 60 20 PGM TVJ = TVJM IT = ITAVM 100 5 4 2 , circuits Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated , , Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 Symbol Test
POWERSEM
Original
PSKT 310

250-14io1

Abstract: mcc 250 thyristor MCD Threaded spacer for higher Anode/ Cathode construction: Type ZY 250, material brass 20 , Thyristor/Diode Modules 3 VRSM VDSM VRRM VDRM V V 900 1300 1500 1700 1900 800 , 60 20 W W W VRGM 10 V TVJ TVJM Tstg -40.+140 140 -40.+125 °C °C °C , /106-132 Nm/lb.in. 320 g Data according to IEC 60747 and refer to a single thyristor/diode unless , a Characteristic Values thyristor/diode; DC current module thyristor/diode; DC current
IXYS
Original
250-14io1 mcc 250 thyristor THYRISTOR MODULE IXYS MCC 250 2x450 250-16io1
Showing first 20 results.