NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| ZVP3306F | N/A | FET Data Book |
1 pages, |
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| ZVP3306F | Zetex Semiconductors | Quick Reference Guide (Discrete Semiconductors) 1991 |
2 pages, |
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| ZVP3306F | Zetex Semiconductors | SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
2 pages, |
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| ZVP3306F | N/A | Shortform Datasheet & Cross References Data |
1 pages, |
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| ZVP3306FTA | Zetex Semiconductors | MOSFET, SOT23 P-Channel Enhancement Mode Vertical DMOS FET, Tape and Reel |
2 pages, |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: SOT23 P CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET PARTMARK1NG DETAIL - ZVP3306F - ML ZVP3306F ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage Vos -60 V Continuous Drain Current @ Tamb=25'C Id -0.09 A Pulsed Drain Current Idm -1.6 A Gate-Source Voltage Vqs ±20 V Max Power Dissipation @ Tamb=25"C Ptot 330 mW Operating And Storage Temperature Range t]':tstg -55 TO +150 •c ELECTRICAL , pulsed conditions. Puise width=300us. Duty cycle=s 2%. DS400 DS400 ZVP3306F TYPICAL CHARACTERISTICS «Di MM ... | OCR Scan |
4 pages, |
ZVP3310F DS400 ZVP3306F ZVP3306F abstract |
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| Abstract: ZVP3306F TYPICAL CHARACTERISTICS Drain Source -6 -4 -2 -200mA 0 -100mA 0 -2 -4 -6 -8 I - Drain Current (Amps) ID= -400mA -8 V VGS= -16V -14V , Dissipation at Tamb=25°C 60 ZVP3306F -10V -0.4 -10 SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL , ZVP3306F TYPICAL CHARACTERISTICS Drain Source -6 -4 -2 -200mA 0 -100mA 0 -2 -4 , Dissipation at Tamb=25°C 60 ZVP3306F -10V -0.4 -10 SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL ... | Original |
2 pages, |
ZVP3306F ZVN3306F FET SOT23 60V ZVN3306F abstract |
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| Abstract: Q4 ZVP3306F R2 6.98K Q2 Si4435DY Si4435DY * See note 2. C6 0.1uF Q1 Si4435DY Si4435DY POS R10 , 0.1uF * See note 1. Q4 ZVP3306F R2 6.98K Q2 Si4435DY Si4435DY * See note 2. C6 0.1uF Q1 ... | Original |
5 pages, |
ZVP3306F DIODE B1N DIODE B3N 18650 DIODE B4N 18650 li-ion BAT54 COL 18650 battery li-ion 18650 battery 18650 li-ion cell datasheet abstract |
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| Abstract: 350 -1.5 -3.5 _ 1 80 -50 -10 ZVP3310F ZVP3310F - 100 -75 -1.2 350 -1.5 -3.5 - 1 20 - 150 - 10 ZVP3306F -60 , MR ZVP3306F -60 -90 -1.6 -1.5 -3.5 -1 14 -200 -10 250 ML BSS84 BSS84+ -50 -130 -0.52 -0.8 -2.0 -1 10 -100 ... | OCR Scan |
2 pages, |
ZVN4206E BSS66 BSS67 BSS79B BSS79C BSS84A FMMT2222 FMMT2222A FMMT3903 FMMT3904 FMMT4123 FMMT4400 FMMT4401 ZVN2106E ZVN3310F BSS79B abstract |
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| Abstract: 350 -1.5 -3.5 _ 1 80 -50 -10 ZVP3310F ZVP3310F - 100 -75 -1.2 350 -1.5 -3.5 - 1 20 - 150 - 10 ZVP3306F -60 ... | OCR Scan |
1 pages, |
FMMT4401 BSS67 BSS79B BSS79C BSS84A FMMT2222 FMMT2222A FMMT3903 FMMT3904 FMMT4123 FMMT4400 BSS66 BSS79B abstract |
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| Abstract: VP0106N3-G VP0106N3-G VP0610L VP0610L VP0106N3-G VP0106N3-G ZVP3306F VP2110K1-G VP2110K1-G BST72A BST72A VN0808L-G VN0808L-G TP0610T TP0610T TP0610T-G TP0610T-G ... | Original |
1 pages, |
ZVN3320A BSS7728 VP2110K1-G tn5325 vn10km cross ZVP2106A TN0604N3 VN10LF ZVNL110A BSN10 "cross reference" CROSS REFERENCE 2n6661 BST72A CROSS BST72A replacement mosfet bs250 2N6660 2N6661 2N6660 abstract |
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| Abstract: 350 -1.5 -3.5 _ 1 80 -50 -10 ZVP3310F ZVP3310F - 100 -75 -1.2 350 -1.5 -3.5 - 1 20 - 150 - 10 ZVP3306F -60 , MR ZVP3306F -60 -90 -1.6 -1.5 -3.5 -1 14 -200 -10 250 ML BSS84 BSS84+ -50 -130 -0.52 -0.8 -2.0 -1 10 -100 ... | OCR Scan |
3 pages, |
ZVP4105A BSS66 BSS67 BSS79B BSS79C FMMT2222 FMMT2222A FMMT3903 FMMT3904 FMMT4123 FMMT4400 ZVN3320F zetex zvp2106a B558 FMMT4401 BSS79B abstract |
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| Abstract: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN3306F ZVN3306F ISSUE 3 JANUARY 1996 FEATURES * RDS(on)= 5 * 60 Volt VDS COMPLEMENTARY TYPE PARTMARKING DETAIL - S D ZVP3306F MC G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS 60 V Continuous Drain Current at T amb =25°C ID 150 mA Pulsed Drain Current I DM 3 A Gate-Source Voltage V GS ± 20 V Power Dissipation at T amb =25°C P tot ... | Original |
3 pages, |
ZVP3306F GS 393 ZVP3306* datasheet ZVN3306F ZVP3306F abstract |
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| Abstract: SOT23 P-CHANNEL ENHANCEMENT ZVP3306F MODE VERTICAL DMOS FET ISSUE 3- JANUARY I L 1996 FEATURES . 60 Volt Vr>s . Ro;, ,=14(2 s D PARTMA13KING PARTMA13KING DETAIL COMPLEMENTARY - ML G TYPE - ZVN3306F ZVN3306F SOT23 ABSOLUTE MAXIMUM _ RATINGS. PARAMETER [Drain - Sc, urce (;ontl~luuus VALUE SYMBOL ID Cui, errt atT ,MP,=25'C _ Pdsed Drain r;ate SrIu ( !Irtent l)isscpa, ml Iperatng anti ELECTRICAL Storage Gate ... | Original |
2 pages, |
ZVP3306F ZVN3306F FET SOT23 60V ML SOT23 ZVP3306F abstract |
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| Abstract: 10 ZVP3306F -60 -90 -1.6 350 -1.5 -3.5 - 1 14 -200 - 10 BSS84 BSS84§ -50 -130 -0.52 360 -0.8 -2.0 - 1 10 ... | OCR Scan |
2 pages, |
FMMT5210 BC846B BC850B BC850C BCS47B BCV71 BCV72 FMMT2484 FMMT3903 FMMT3904 FMMT5089 FMMT5209 BC846A BCS46B BC846A abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| .SUBCKT ZVP3306F 3 4 5 *ZETEX MOSFET ZVP3306G ZVP3306G ZVP3306G ZVP3306G, 3 *Node 1,D *Node 2,G *Node 3,S * * D G S M1 3 2 5 5 P3306M P3306M P3306M P3306M RG 4 2 252 RL 3 5 1.2E8 D1 3 5 P3306D P3306D P3306D P3306D * .MODEL P3306M P3306M P3306M P3306M PMOS VTO=-2.875 RS=5.227 RD=7.524 IS=1E-15 1E-15 1E-15 1E-15 KP=.145 +CGSO=28E-12 28E-12 28E-12 28E-12 CGDO=3E-12 3E-12 3E-12 3E-12 CBD=35E-12 35E-12 35E-12 35E-12 PB=1 LAMBDA=6.67E-3 67E-3 67E-3 67E-3 * .MODEL P3306D P3306D P3306D P3306D D IS=5E-12 5E-12 5E-12 5E-12 RS=.768 .ENDS ZVP3306F www.datasheetarchive.com/files/kaleidoscope/cad/visionics_edwinxp140/edwinxp/eds_sbk/zetex/zvp3306f.sbc |
Kaleidoscope | 25/06/1999 | 0.32 Kb | SBC | zvp3306f.sbc |
| *ZETEX ZVP3306F Mosfet Spice Subcircuit Last revision 3/97 * .SUBCKT ZVP3306F 3 4 5 * D G S M1 3 2 5 5 P3306M P3306M P3306M P3306M RG 4 2 252 RL 3 5 1.2E8 D1 3 5 P3306D P3306D P3306D P3306D * .MODEL P3306M P3306M P3306M P3306M PMOS VTO=-2.875 RS=5.227 RD=7.524 IS=1E-15 1E-15 1E-15 1E-15 KP=.145 +CGSO=28E-12 28E-12 28E-12 28E-12 CGDO=3E-12 3E-12 3E-12 3E-12 CBD=35E-12 35E-12 35E-12 35E-12 PB=1 LAMBDA=6.67E-3 67E-3 67E-3 67E-3 * .MODEL P3306D P3306D P3306D P3306D D IS=5E-12 5E-12 5E-12 5E-12 RS=.768 .ENDS ZVP3306F * * (C) 1991 ZETEX PLC * * The copyright in this model and the design embodied belong to * Zetex PLC ("Zetex"). It is www.datasheetarchive.com/files/zetex/spice/zvp3306f.mod |
Zetex | 08/07/1999 | 0.99 Kb | MOD | zvp3306f.mod |
| * * ZETEX ZVP3306F Mosfet Spice Subcircuit Last revision 3/5/00 * .SUBCKT ZVP3306F 3 4 5 * D G S M1 3 2 5 5 P3306M P3306M P3306M P3306M RG 4 2 252 RL 3 5 1.2E8 C1 2 5 28E-12 28E-12 28E-12 28E-12 C2 3 2 3E-12 3E-12 3E-12 3E-12 D1 3 5 P3306D P3306D P3306D P3306D * .MODEL P3306M P3306M P3306M P3306M PMOS VTO=-2.875 RS=5.227 RD=7.524 IS=1E-15 1E-15 1E-15 1E-15 KP=.145 +CBD=35E-12 35E-12 35E-12 35E-12 PB=1 LAMBDA=6.67E-3 67E-3 67E-3 67E-3 .MODEL P3306D P3306D P3306D P3306D D IS=5E-12 5E-12 5E-12 5E-12 RS=.768 .ENDS ZVP3306F * *$ * * (C) 1991 ZETEX PLC * * The copyright in this model and the design embodied belong to * Zetex PLC ("Zetex"). It is www.datasheetarchive.com/files/spicemodels/misc/spice_model_cd/vendor list/zetex/zvp3306f.lib |
Spice Models | 29/07/2012 | 1.01 Kb | LIB | zvp3306f.lib |
| * *Zetex ZVP3306F Spice Model v1.1 Last Revised 3/5/00 * .SUBCKT ZVP3306F 3 4 5 * D G S M1 3 2 5 5 P3306M P3306M P3306M P3306M RG 4 2 252 RL 3 5 1.2E8 C1 2 5 28E-12 28E-12 28E-12 28E-12 C2 3 2 3E-12 3E-12 3E-12 3E-12 D1 3 5 P3306D P3306D P3306D P3306D * .MODEL P3306M P3306M P3306M P3306M PMOS VTO=-2.875 RS=5.227 RD=7.524 IS=1E-15 1E-15 1E-15 1E-15 KP=.145 +CBD=35E-12 35E-12 35E-12 35E-12 PB=1 LAMBDA=6.67E-3 67E-3 67E-3 67E-3 .MODEL P3306D P3306D P3306D P3306D D IS=5E-12 5E-12 5E-12 5E-12 RS=.768 .ENDS ZVP3306F * *$ * * (c) 2005 Zetex Semiconductors plc * * The copyright in these models and the designs embodied belong * to Zetex www.datasheetarchive.com/files/diodes-inc/spice-model/1528.mod |
Diodes, Inc. | 04/09/2012 | 1.06 Kb | MOD | 1528.mod |
| =1.0078 .ENDS ZVN4424G ZVN4424G ZVN4424G ZVN4424G * *ZETEX ZVP3306F Mosfet Spice Subcircuit Last revision 3/97 * .SUBCKT ZVP3306F 3 4 5 * D G S M1 3 2 5 5 P3306M P3306M P3306M P3306M RG 4 2 252 RL 3 5 1.2E8 D1 3 5 P3306D P3306D P3306D P3306D * .MODEL LAMBDA=6.67E-3 67E-3 67E-3 67E-3 * .MODEL P3306D P3306D P3306D P3306D D IS=5E-12 5E-12 5E-12 5E-12 RS=.768 .ENDS ZVP3306F * * *ZETEX ZVP4424G ZVP4424G ZVP4424G ZVP4424G Mosfet Spice www.datasheetarchive.com/files/zetex/spice/znewmods.lib |
Zetex | 24/08/1998 | 19.63 Kb | LIB | znewmods.lib |
| .0078 .ENDS ZVN4424G ZVN4424G ZVN4424G ZVN4424G * *ZETEX ZVP3306F Mosfet Spice Subcircuit Last revision 3/97 * .SUBCKT ZVP3306F 3 4 5 * D G S M1 3 2 5 5 P3306M P3306M P3306M P3306M RG 4 2 252 RL 3 5 1.2E8 D1 3 5 P3306D P3306D P3306D P3306D LAMBDA=6.67E-3 67E-3 67E-3 67E-3 * .MODEL P3306D P3306D P3306D P3306D D IS=5E-12 5E-12 5E-12 5E-12 RS=.768 .ENDS ZVP3306F * * *ZETEX ZVP4424G ZVP4424G ZVP4424G ZVP4424G Mosfet Spice www.datasheetarchive.com/files/spicemodels/misc/spice_model_cd/vendor list/zetex/znewmods.lib |
Spice Models | 29/07/2012 | 19.77 Kb | LIB | znewmods.lib |
| DBS250 DBS250 DBS250 DBS250 D IS=2E-13 2E-13 2E-13 2E-13 RS=0.309 .ENDS BS250P BS250P BS250P BS250P * *$ * *Zetex ZVP3306F Spice Model v1.1 Last Revised 3/5/00 * .SUBCKT ZVP3306F 3 4 5 * D G S M1 3 2 5 5 P3306M P3306M P3306M P3306M RG 4 2 252 RL 3 5 1.2E8 C1 2 5 28E-12 28E-12 28E-12 28E-12 +CBD=35E-12 35E-12 35E-12 35E-12 PB=1 LAMBDA=6.67E-3 67E-3 67E-3 67E-3 .MODEL P3306D P3306D P3306D P3306D D IS=5E-12 5E-12 5E-12 5E-12 RS=.768 .ENDS ZVP3306F www.datasheetarchive.com/files/diodes-inc/spice-model/spicemodels_mosfets_p-channel_p-channel-31v-99v.txt |
Diodes, Inc. | 04/09/2012 | 28.73 Kb | TXT | spicemodels_mosfets_p-channel_p-channel-31v-99v.txt |
| .SUBCKT Zetex_XN models from http://www.zetex.com/spice1.shtm *#$@ (SS special comment) * (C) 1997 ZETEX PLC * * The copyright in these models and the designs embodied belong * to Zetex PLC ("Zetex"). They are supplied free of charge by * Zetex for the purpose of research and design and may be used or * copied intact (including this notice) for that purpose only. * All other rights are reserved. The models are believed accurate * but no c www.datasheetarchive.com/files/spicemodels/misc/models/zetexdescrete.lib |
Spice Models | 27/08/2003 | 85.12 Kb | LIB | zetexdescrete.lib |
| * ZETEX Spice Model Library v4.5 * (Last Revision June 2002) * *NOTE 1 *To introduce temperature dependence for bipolar current gain *into a ZETEX model please insert the term XTB. XTB is none *linear with temperature and an average value around room *temperature is 1.4. For better accuracy when working around *-55°C use a value of 1.7 and around 100°C use a value of 1.1. * *NOTE 2 *Some ZETEX high voltage bipolar models use RCO & GAMMA as www.datasheetarchive.com/files/spicemodels/misc/modelos/spice_complete/zmodels.lib |
Spice Models | 18/04/2010 | 168.97 Kb | LIB | zmodels.lib |
| * ZETEX Spice Model Library v4.7 * (Last Revision July 2003) * * *NOTE 1 *Some ZETEX high voltage bipolar models use RCO & GAMMA as supported by *MicroSim PSpice. PSpice models the quasi-saturation effect less well *at temperature extremes. Spice software which does not support RCO & GAMMA *will model the quasi-saturation region incorrectly. The resulting *model will return optimistic values for forward Vcesat, current gain *and Tdon. If you www.datasheetarchive.com/files/spicemodels/misc/models/zmodels.lib |
Spice Models | 27/08/2003 | 190.93 Kb | LIB | zmodels.lib |
| NXP Semiconductor / Philips Part | Industry Part | Manufacturer | Type | Comments |
| Part | Similar Part | Notes |