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ZPD75 DO-204AH DO-35 ZMM75 D7/10K D8/10K SB14686 ZPD10 ZPD11 ZPD12 ZPD13 ZPD15 - Datasheet Archive
Vishay Semiconductors formerly General Semiconductor Zener Diodes VZ Range 1.0, 2.7 to 75V Power Dissipation 500mW DO-204AH
ZPD1 thru ZPD75 ZPD75 Vishay Semiconductors formerly General Semiconductor Zener Diodes VZ Range 1.0, 2.7 to 75V Power Dissipation 500mW DO-204AH DO-204AH (DO-35 DO-35 Glass) Features · Silicon Planar Zener Diodes. · The Zener voltages are graded according to the international E 12 standard. Offered with either 5% or 2% tolerance. Smaller voltage tolerances and other Zener voltages are available upon request. · These diodes are also available in MiniMELF case with the type designation ZMM1 . ZMM75 ZMM75. Mechanical Data Case: DO-35 DO-35 Glass Case Weight: approx. 0.13g Packaging codes/options: D7/10K D7/10K per 13" reel, (52mm tape), 20K/box D8/10K D8/10K per Ammo tape (52mm tape), 20K/box Dimensions in inches and (millimeters) Maximum Ratings and Thermal Characteristics Parameter (TA = 25°C unless otherwise noted) Symbol Value Unit Ptot 500(1) mW Zener Current (see Table "Characteristics") Power Dissipation at Tamb = 25°C Thermal Resistance Junction to Ambient Air RJA (2) 300 °C/W Junction Temperature Tj 175 °C Storage Temperature Range TS 55 to +175 °C Notes: (1) Valid provided that leads at a distance of 8mm from case are kept at ambient temperature (2) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature Document Number 88415 02-May-02 www.vishay.com 1 ZPD1 thru ZPD75 ZPD75 Vishay Semiconductors formerly General Semiconductor Electrical Characteristics Type add suffix SB14686 SB14686 for 2% tol. (TA = 25°C unless otherwise noted) Dynamic Resistance at IZ = 1 mA at IZ = 5 mA f = 1 kHz f = 1 kHz rzj () rzj () Temperature Coefficient of Zener Voltage at IZ = 5 mA vz (104/°C) min max Reverse Voltage at IR = 100 nA VR (V) Admissible Zener current(2) at at Tamb = 25°C Tamb = 45°C IZ (mA) IZ (mA) ZPD1(3) 6.5 (< 8) < 50 26 23 280 ZPD2.7 75 (< 83) < 500 9 4 135 160 ZPD3 80 (< 95) < 500 9 3 117 140 ZPD3.3 80 (< 95) < 500 8 3 109 130 ZPD3.6 80 (< 95) < 500 8 3 101 120 ZPD3.9 80 (< 95) < 500 7 3 92 110 ZPD4.3 80 (< 95) < 500 6 1 85 100 ZPD4.7 70 (< 78) < 500 5 +2 76 90 ZPD5.1 30 (< 60) < 480 3 +4 > 0.8 67 80 ZPD5.6 10 (< 40) < 400 2 +6 >1 59 70 ZPD6.2 4.8 (< 10) < 200 1 +7 >2 54 64 ZPD6.8 4.5 (< 8) < 150 +2 +7 >3 49 58 ZPD7.5 4 (< 7) < 50 +3 +7 >5 44 53 340 ZPD8.2 4.5 (< 7) < 50 +4 +7 >6 40 47 ZPD9.1 4.8 (< 10) < 50 +5 +8 >7 36 43 ZPD10 ZPD10 5.2 (< 15) < 70 +5 +8 > 7.5 33 40 ZPD11 ZPD11 6 (< 20) < 70 +5 +9 > 8.5 30 36 ZPD12 ZPD12 7 (< 20) < 90 +6 +9 >9 28 32 ZPD13 ZPD13 9 (< 25) < 110 +7 +9 > 10 25 29 ZPD15 ZPD15 11 (< 30) < 110 +7 +9 > 11 23 27 ZPD16 ZPD16 13 (< 40) < 170 +8 +9.5 > 12 20 24 ZPD18 ZPD18 18 (< 50) < 170 +8 +9.5 > 14 18 21 ZPD20 ZPD20 20 (< 50) < 220 +8 +10 > 15 17 20 ZPD22 ZPD22 25 (< 55) < 220 +8 +10 > 17 16 18 ZPD24 ZPD24 28 (< 80) < 220 +8 +10 > 18 13 16 ZPD27 ZPD27 30 (< 80) < 250 +8 +10 > 20 12 14 ZPD30 ZPD30 35 (< 80) < 250 +8 +10 > 22.5 10 13 ZPD33 ZPD33 40 (< 80) < 250 +8 +10 > 25 9 12 ZPD36 ZPD36 40 (< 90) < 250 +8 +10 > 27 9 11 ZPD39 ZPD39 50 (< 90) < 300 +10 +12 > 29 8 10 ZPD43 ZPD43 60 (< 100) < 700 +10 +12 > 32 7 9.2 ZPD47 ZPD47 70 (< 100) < 750 +10 +12 > 35 6 8.5 ZPD51 ZPD51 70 (< 100) < 750 +10 +12 > 38 6 7.8 ZPD56 ZPD56 < 135(4) < 1000(5) typ. +10(4) > 42 5.2 7.1 ZPD62 ZPD62 < 150(4) < 1000(5) typ. +10(4) > 47 4.8 6.4 ZPD68 ZPD68 < 200(4) < 1000(5) typ. +10(4) > 51 4.1 5.8 ZPD75 ZPD75 (4) (5) (4) > 55 3.9 5.3 < 250 < 1500 typ. +10 Notes: (1) Tested with pulses tp = 5ms (2) Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature (3) The ZPD1 is a silicon diode operated in forward direction. Hence, the subscript of all parameters should be "F" instead of "Z". Connect the cathode terminal to the negative pole (4) at IZ = 2.5mA (5) at IZ = 0.5mA www.vishay.com 2 Document Number 88415 02-May-02 ZPD1 thru ZPD75 ZPD75 Vishay Semiconductors formerly General Semiconductor Electrical Characteristics Type ± 5% Tol. Zener Voltage range(1) at IZ VZ (V) min. max. (TA = 25°C unless otherwise noted) Test Current IZ (mA) Type add suffix SB14686 SB14686 for ± 2% Tol. Zener Voltage range(1) at IZ VZ (V) min. max. Test Current IZ (mA) ZPD1(3) 0.70 0.80 5.0 ZPD1(3) - - 5.0 ZPD2.7 2.50 2.90 5.0 ZPD2.7 2.65 2.75 5.0 ZPD3 2.80 3.20 5.0 ZPD3 2.94 3.06 5.0 ZPD3.3 3.10 3.50 5.0 ZPD3.3 3.23 3.37 5.0 ZPD3.6 3.40 3.80 5.0 ZPD3.6 3.53 3.67 5.0 ZPD3.9 3.70 4.10 5.0 ZPD3.9 3.82 3.98 5.0 ZPD4.3 4.00 4.60 5.0 ZPD4.3 4.21 4.39 5.0 ZPD4.7 4.40 5.00 5.0 ZPD4.7 4.61 4.79 5.0 ZPD5.1 4.80 5.40 5.0 ZPD5.1 5.00 5.20 5.0 ZPD5.6 5.20 6.00 5.0 ZPD5.6 5.49 5.71 5.0 ZPD6.2 5.80 6.60 5.0 ZPD6.2 6.08 6.32 5.0 ZPD6.8 6.40 7.20 5.0 ZPD6.8 6.66 6.94 5.0 ZPD7.5 7.00 7.90 5.0 ZPD7.5 7.35 7.65 5.0 ZPD8.2 7.70 8.70 5.0 ZPD8.2 8.04 8.36 5.0 ZPD9.1 8.50 9.60 5.0 ZPD9.1 8.92 9.28 5.0 ZPD10 ZPD10 9.40 10.6 5.0 ZPD10 ZPD10 9.80 10.2 5.0 ZPD11 ZPD11 10.4 11.6 5.0 ZPD11 ZPD11 10.8 11.2 5.0 ZPD12 ZPD12 11.4 12.7 5.0 ZPD12 ZPD12 11.8 12.2 5.0 ZPD13 ZPD13 12.4 14.1 5.0 ZPD13 ZPD13 12.7 13.3 5.0 ZPD15 ZPD15 13.8 15.6 5.0 ZPD15 ZPD15 14.7 15.3 5.0 ZPD16 ZPD16 15.3 17.1 5.0 ZPD16 ZPD16 15.7 16.3 5.0 ZPD18 ZPD18 16.8 19.1 5.0 ZPD18 ZPD18 17.6 18.4 5.0 ZPD20 ZPD20 18.8 21.2 5.0 ZPD20 ZPD20 19.6 20.4 5.0 ZPD22 ZPD22 20.8 23.3 5.0 ZPD22 ZPD22 21.6 22.4 5.0 ZPD24 ZPD24 22.8 25.6 5.0 ZPD24 ZPD24 23.5 24.5 5.0 ZPD27 ZPD27 25.1 28.9 5.0 ZPD27 ZPD27 26.5 27.5 5.0 ZPD30 ZPD30 28.0 32.0 5.0 ZPD30 ZPD30 29.4 30.6 5.0 ZPD33 ZPD33 31.0 35.0 5.0 ZPD33 ZPD33 32.3 33.7 5.0 ZPD36 ZPD36 34.0 38.0 5.0 ZPD36 ZPD36 35.3 36.7 5.0 ZPD39 ZPD39 37.0 41.0 5.0 ZPD39 ZPD39 38.2 39.8 5.0 ZPD43 ZPD43 40.0 46.0 5.0 ZPD43 ZPD43 42.1 43.9 5.0 ZPD47 ZPD47 44.0 50.0 5.0 ZPD47 ZPD47 46.1 47.9 5.0 ZPD51 ZPD51 48.0 54.0 5.0 ZPD51 ZPD51 50.0 52.0 5.0 ZPD56 ZPD56 52.0 60.0 2.5 ZPD56 ZPD56 54.9 46.9 2.5 ZPD62 ZPD62 58.0 66.0 2.5 ZPD62 ZPD62 60.8 63.2 2.5 ZPD68 ZPD68 64.0 72.0 2.5 ZPD68 ZPD68 66.6 69.4 2.5 ZPD75 ZPD75 70.0 79.0 2.5 ZPD75 ZPD75 73.5 76.5 2.5 Notes: (1) Measured with pulses tp = 5 ms (3) The ZPD1 is a silicon diode operated in forward direction. Hence, the subscript of all parameters should be "F" instead of "Z". Connect the cathode terminal to the negative pole Document Number 88415 02-May-02 www.vishay.com 3 ZPD1 thru ZPD75 ZPD75 Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) www.vishay.com 4 Document Number 88415 02-May-02 ZPD1 thru ZPD75 ZPD75 Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) Document Number 88415 02-May-02 www.vishay.com 5 ZPD1 thru ZPD75 ZPD75 Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) www.vishay.com 6 Document Number 88415 02-May-02 ZPD1 thru ZPD75 ZPD75 Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) °C/W °C Document Number 88415 02-May-02 www.vishay.com 7 ZPD1 thru ZPD75 ZPD75 Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) °C °C www.vishay.com 8 Document Number 88415 02-May-02 ZPD1 thru ZPD75 ZPD75 Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) Document Number 88415 02-May-02 www.vishay.com 9