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Part Manufacturer Description Datasheet BUY
PTV10B-M3/85A Vishay Semiconductors 1.5W,10V, SMP ZENER visit Digikey
PTV10B-M3/84A Vishay Semiconductors 1.5W,10V, SMP ZENER visit Digikey
933117710143 Nexperia DIODE ZENER 4.7V 400MW DO35 visit Digikey
934054846115 Nexperia DIODE ZENER 3V 400MW SOD323 visit Digikey
SMAZ5925B-M3/5A Vishay Semiconductors 1.5W,10V 5%,SMA ZENER visit Digikey
SMAZ5925B-M3/61 Vishay Semiconductors 1.5W,10V 5%,SMA ZENER visit Digikey

ZENER+10V/400mW

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Industry standard 3-pin TO-220 · ESD protected to 1.5KV · Low On-resistance, 50m · 10V input level , 2uA (1.0V) 10uA (5.0V) DIL8/SO8L 2.2 - 6.0V 1.0 - 6.0V 1uA (2.0V) 4uA (5.0V) DIL/SO8 · · , voltage: 2.5V to 6V · Clock operating supply voltage (0 to +70°C): 1.0V to 6.0V · Data retention voltage: 1.0V to 6V · Operating current (fscl =0 Hz): Max 50A · Clock function with four year calendar Philips Semiconductors
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Zener Diode 3v 400mW BC107 transistor transistor bc548b TRANSISTOR bc108 bc547 cross reference chart Transistor BC109 DS750 87C750 80C51 PZ3032-12A44 BUK101-50GS BUW12AF
Abstract: : (978) 689-0803 Website: http: //www.microsemi.com 400mW ZENER VOLTAGE REGULATOR DIODE DEVICES , 5% 24.0 400mW 1N3507A 3.6 20.0 5% 22.0 400mW 1N3508A 3.9 20.0 5% 20.0 400mW 1N3509A 4.3 20.0 5% 18.0 400mW 1N3510A 4.7 20.0 5% 16.0 400mW 1N3511A 5.1 20.0 5% 14.0 400mW 1N3512A 5.6 20.0 5% 8.0 400mW 1N3513A 6.2 20.0 5% 3.0 400mW 1N3514A 6.8 20.0 5% 3.0 400mW 1N3515A Microsemi
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1N3506A 1N3534A 5 volts ZENER DIODE 180 volts ZENER DIODE 8.2 zener diode 1N3516A 1N3517A 1N3518A 1N3519A
Abstract: Power Rating 1N3506A 3.3 20.0 5% 24.0 400mW 1N3507A 3.6 20.0 5% 22.0 400mW 1N3508A 3.9 20.0 5% 20.0 400mW 1N3509A 4.3 20.0 5% 18.0 400mW 1N3510A 4.7 20.0 5% 16.0 400mW 1N3511A 5.1 20.0 5% 14.0 400mW 1N3512A 5.6 20.0 5% 8.0 400mW 1N3513A 6.2 20.0 5% 3.0 400mW 1N3514A 6.8 20.0 5% 3.0 400mW 1N3515A 7.5 10.0 5% 4.0 400mW 1N3516A 8.2 10.0 Microsemi
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1N3520A 1N3512 1N3521A 1N3522A 1N3523A 1N3524A 1N3525A
Abstract: wide operating voltage range (2.3 to 10V) Low loss detector (low reference voltage: Vref , control using en pin with PWM signal Low component count 800kHz 2.3 to 10V (Vref=0.515V) 20V , 2.3 to -30 to Adjustable 400mA External 80% 400mW 800kHz 2 to 4 10.0V +85°C schottky 3 W-LED TOKO
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TK11851L TK11851LTL-G D31FB 984FB-220M Zener Diode 7 10v 400mW 3V10V 515VLED
Abstract: 49 Ta&uX Electronic Valves Z & I Aero Services Ltd London England 1972 - 73 Zener Diode Selection Chart Continued Voltage 250mW 5% 340mW 10% 400mW 5% 1W 10% 1W 5% 1.5W 5% 2W 5% 5W 10% 5.25W 10% 8W 10% 20W 5% 8.2 V BZY88C8V2 OAZ206 BZX61C8V2 D815V 8.7V D814B 9.1V BZY88C9V1 10V D814V BZY88C10 BZX70C10 D815G 11V D814G BZY88C11 BZX61C11 BZX70C11 VR11A 12V BZY88C12 D815D 13V D814D BZY88C13 VR13A 15V BZY88C15 Z2A150FB 8ZX61C15 D815E 16V -
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D816A D816D D817A BZY11 D817B D817G zener diode D814D zener diode 18V 1.5W ZENER D814D Zener Diode 12v 400mW BZY88C16 Z2A160CF BZX61C16 BZX70C15 BZX70C18 D815Z
Abstract: -452 E-452 F-562 E-562 P in c h -o ff c u rre n t*' T est vottage 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V IpCmA) 0.01â'" 0.05â'" 0.20â'" 0.40â'" 0.60â'" 0 88â'" 1.28â , Voltage (V) â'" Explanation of terms Ip Pinch-off current at 10V VK Voltage which produces O.BIp or , 30CTC/W F type 400mW 1 50*C /W 100V 50m A â'" 30 'C â'" 150â'C Voltage ( v ) - l(s -
OCR Scan
F-101L E-101L F-101 E-101 F-301 E-301
Abstract: -103 E-123 E-153 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V Pinch-off current*1 , 0.20.05 Feeding round hole Part retaining square hole 0.1 1.5 0 1.750.1 50.5 VR VK IR 10V 100V VB , 26 or 52 4.00.1 4.00.1 Explanation of terms IP :Pinch-off current at 10V VK:Voltage which , Operating temp E type 300mW 300C/ W F type 400mW 150C/ W 6.350.5 30.5 Insulation 200.5 26.30.5 0 2 Type SeMitec Ishizuka Electronics
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E-701 diode zener ZD 101 zener diode on 822 EE-202 diode zener ZD 153 glass diode orange yellow band diode zener ZD 103 F-501 F-701 F-102 F-152 F-202 F-272
Abstract: -103 E-123 E-153 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V Pinch-off current*1 , 0.20.05 Feeding round hole Part retaining square hole 0.1 1.5 0 1.750.1 50.5 VR VK IR 10V 100V VB , 26 or 52 4.00.1 4.00.1 Explanation of terms IP :Pinch-off current at 10V VK:Voltage which , Operating temp E type 300mW 300C/ W F type 400mW 150C/ W 6.350.5 30.5 Insulation 200.5 26.30.5 02 Type 1 SeMitec Ishizuka Electronics
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F-352 CRD Diode zener band yellow glass diode yellow band diode E562 zener zd 31 F-452 F-822 F-103 F-123 F-153
Abstract: -103 E-123 E-153 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V Pinch-off current*1 , IP 0.20.05 Feeding round hole Part retaining square hole 0.1 1.5 0 1.750.1 50.5 VR VK IR 10V , L1L2 1.5 26 or 52 4.00.1 4.00.1 Explanation of terms IP :Pinch-off current at 10V VK:Voltage , current Operating temp E type 300mW 300C/ W F type 400mW 150C/ W 6.350.5 30.5 Insulation 200.5 26.30.5 02 SeMitec Ishizuka Electronics
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zener zd 501 CRD F-352 crd e103 822 diode Current Regulative Diode zener diode 562 E-501 E-102 E-152 E-202 E-272 E-352
Abstract: mois«« Power Dissipation at +50 °G Ambient: Operations (Op) & Storage (Sstg) 400mW -65 °C to +200 , MAXIMUM fUkTMGS DC Power Dissipation at +50 °C Ambient: Operations (Op) & Storage (Tstg): 400mW -65 , uA uA OHMS OHMS mA %/C 5. 1 5 5 30 1500 1.0V +-0.030 NORMINAL 1NS231A 1N5231B 8°04-918Ã" B K C , 007 QC ELECTRICAL INSPECTION »VF4 e lOOifi '.B50V-1.0V 25C OOB SHIPPING REQUIREHENTS »VF5 * 200iA -
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1N4752 1N4729 1N4731 1N4732 1N4733 1N4734 Zener Diode 4148 zener T 4148 ZENER 4148 T 4148 zener ZENER diode t 4148 5 volts zener diode 4148 DQQQ271 1N4728 DO-41 1N4730
Abstract: coefficient"* Indication lead less lead Test voltage IpCmA) V.CV5 InCmA) F-101L E-101L 10V 0.01â'"0 06 O 4 mino 81p 8.00 max 1 1 + 2 1-1-0 10 IL F-101 E-101 10V 0.05â'"0.21 O S minO.81 p 6.00 max 1 1 + 2.1-H0.10 01 F-301 e-3oi 10V 0.20â'"'0.42 0.8 min0.81 p 400 max 1 1 (- 0 4-â'"â  â'" 0 20 03 F-501 E-501 10V 0.40â'"-0.63 1.1 minO 81p 2.00 max 1 1 + 0.1-â'"' â'" 0.25 05 F-701 E-701 10V 0.60â'"0.92 1.4 min0.81p 1.00 max 1 1 OO-O 32 07 F-102 E-102 10V O 88â'"1 32 1 7 min0.81p 0.65 max 1 1 â -
OCR Scan
MAA3171 F101-L ishizuka Ishizuka E-562 e352 CRD Diode B
Abstract: SEMICONDUCTOR PRODUCTS DIVISION A DIVISION or HARRIS CORPORATION HA-1610/1615 +10V Precision Voltage Reference FEATURES DESCRIPTION â'¢ MONOLITHIC CONSTRUCTION â'¢ INITIAL ACCURACY +10V ± 0.05 , REFERENCE HA-1610/15 is a monolithic +10V precision voltage reference featuring excellent initial accuracy , 's voltage output constant under varying external conditions while an initial accuracy of 10V ± 0.05% and a , zener bias resistors. An accurate +10V DC output with 10mA typical load current capability is provided -
OCR Scan
HA-1515-5 HA-1610-2 HA-1610-5 HA-1615-2 HA-1615-5 HA1610-5 100/JVRMS AV0/10V
Abstract: ) 9.5 35 8.2 05W 500mW,DO-35 05WS 400mW,DO-34 NOTE: 05W series is for 500mW,DO-35 package; 05WS series is for 400mW,DO-34 package. 1B­1/2 LESHAN RADIO COMPANY, LTD. 05W 05WS 05W 05WS , 29 ± 1 0.4 ± 0.1 DO-35 (mm) DO-34 (mm) 05W 500mW,DO-35 05WS 400mW,DO-34 NOTE: 05W series is for 500mW,DO-35 package; 05WS series is for 400mW,DO-34 package. 1B­2/2 Leshan Radio Leshan Radio Company
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05W12 1b2 zener DO-34 PACKAGE 05w18 05W1 DO-34 ZENER 8205W 05W15 05WS15 05W16 05WS16 05W18
Abstract: (Ta=25°C) 100 ZENER CURRENT : IZ (mA) Ta=25°C Pd=400mW 100 50 Ta=25°C 100 50 50 20 10 5 3.6 ZENER CURRENT : IZ (mA) 20 10 5 20 22 24 13 Pd=400mW ZENER VOLTAGE : VZ (mA) 20 Pd=400mW 10 5 2 1 0.5 15 16 3.9 30 33 36 2 1 2 1 0.5 18 27 5.6 ROHM
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RLZ30RLZ39 RLZ20A LL34 ZENER DIODE color bands zener diode green BAND brown red yellow zener diode orange brown green zener diode red green white zener diode LL-34 9RLZ12 RLZ13RLZ27
Abstract: CLL5530B SURFACE MOUNT SILICON ZENER DIODE 10 VOLTS 400mW, 5% TOLERANCE Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CLL5530B is a Silicon Avalanche Zener Diode designed for applications requiring low noise, low leakage, low current, and low impedance. MARKING: CATHODE BAND SOD-80 CASE MAXIMUM RATINGS: (TA=50°C) Power Dissipation Operating and Storage Junction , SILICON ZENER DIODE 10 VOLTS, 400mW 5% TOLERANCE Semiconductor Corp. SOD-80 CASE - MECHANICAL Central Semiconductor
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zener sod 80 diode CENTRAL SEMICONDUCTOR DIODE SOD80 marking 27 diode
Abstract: CLL5530B SURFACE MOUNT SILICON ZENER DIODE 10 VOLTS 400mW, 5% TOLERANCE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CLL5530B is a Silicon Avalanche Zener Diode designed for applications requiring low noise, low leakage, low current, and low impedance. MARKING: CATHODE BAND SOD-80 CASE MAXIMUM RATINGS: (TA=50°C) Power Dissipation Operating and Storage Junction , R1 (8-January 2010) CLL5530B SURFACE MOUNT SILICON ZENER DIODE 10 VOLTS 400mW, 5% TOLERANCE Central Semiconductor
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Abstract: -701 E-701 0.881.32 F-102 E-102 1.281.72 F-152 E-152 1.682.32 F-202 E-202 10V 2.283.10 F-272 E , are three Types for taping. IP 0.8 IP 1 max. VR VK 10V 100V VB Voltage (V) IR Explanation of terms IP :Pinch-off current at 10V VK:Voltage which produces 0.8Ip or greater current VB , type 400mW 150C/ W Part No. F101LF-562 F-822 F-103 F-123 F-153 0.20.05 50.5 50mA SeMitec Ishizuka Electronics
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E-103 glass axial zener diode green BAND CRD F-822 Diode 4003 E202 E-822
Abstract: 3541563 FENWAL ELECTRON ICS / APD 83D 00906 D T-Z/^d ? â'" ])E| 3S415b3 DDDDc1Db 5 | ".; ZENER DIODES 400mW DO-35 Case DO-35Case Typet Nominal Zener Voltage Test Current Maximum! Dynamic Impedance Maximum Temperature Vz@lzt Izt Zzt @ Izt °C V mA 0 - 1N5518 1N5519 1N5520 1N5521 3.3 3.6 3.9 4.3 20 26 24 22 18 175J 1N5522 1N5523 1N5524 1N5525 4.7 5.1 5.6 6.2 10 5 3 1 22 26 30 30 , ±10% of DC zener test current is superimposed on the test current. DO-35 Case 400mW DO-35 Case Typet -
OCR Scan
1N5526 1n5541 zener 7.5 B 45 3S415 DO-35C 1N5527 1N5528 1N5529
Abstract: 1889105 CAPAR COMPONENTS CORP ~71 DE | lAtmOS D0DQ3Q1 1 [(APAR 71C 00301 D T~~ tf- O f CORP. Silicon Zener Diode (400mW) Series 1N751A-1N974B Features â  Silicon Planar diode with double heat sink and glass sealed â  Storage Temperature - 65 °C - + 175 °C â  Junction Temperature 175° C â  Power Dissipation400MW (to 25°C) DO-35 Ma*. 2,0 $ Min. 26 I Max. 4 ? Min. 26 O , 1N974B 36 3.4 70 8.5 Tolerance: suffix B = Vz±5% 1N751 Series (400mW) o (mA) 100 OC oc o te 10 -
OCR Scan
1N957B 1N751A 1N958B 1N752A 1N959B 1N753A DIODE 1N751A zener diode si 18 wam 91 zener 7.5 B 20 zener diode 8.2 v 400MW
Abstract: AMERICAN POWER DEVICES 23E D 0737135 D O O O O m b T - - '/-.Ã' ? ZENER DIODES DO-35 Case 400mW Nominal Zener Voltage Vz @ Izt V Typet Test Current Izt mA Maximum:): Dynamic Impedance Zzt @ Izt D °C - 1N5518 1N5519 1N5520 1N5521 3.3 3.6 3.9 4.3 1N5522 1N5523 1N5524 1N5525 4.7 5.1 5.6 6.2 1N5526 1N5527 1N5528 1N5529 6.8 , with RMS value of +10% of DC zener test current Is superimposed on the test current. 400mW DO -
OCR Scan
1N5530 1N5531 1N5532 1N5533 1N5534 1N5535
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