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1N4699UR-1 Microsemi Corporation Zener Diode visit Digikey
TLZ20-GS08 Vishay Semiconductors Zener Diode visit Digikey
TLZ30A-GS08 Vishay Semiconductors Zener Diode visit Digikey
TLZ39D-GS18 Vishay Semiconductors Zener Diode visit Digikey
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ZENER A34

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: ? GOGOELT 0 | f-(- of 1N821A 1N823A 1N825A 1N827A 1N829A TEMPERATURE COMPENSATED ZENER DIODE JEDEC DO-7 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 1N821A Series types are temperature compensated Zener , . 1N821A 1N823A 1N825A 1N827A 1N829A ZENER VOLTAGE VZ@ lZT x 6.2 6.2 6.2 6.2 6.2 ZENER TEST CURRENT ZT mA 7.5 7.5 7.5 7.5 7.5 MAX. ZENER IMPEDANCE ZZT § lZT JL 10 10 10 10 10 VOLTAGE TEMP , »3-o7 CENTRAL SEMICONDUCTOR CASE OUTLINE DRAWINGS â 22 jH ci) MH â 34 .30 (U) T â 032 .030 h .60 J -
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B1 7 zener T-75 DIODE 623B5 625-J CBR12 CBR30 0000S23
Abstract: /-7/ ll^lB 1N9^2B 1N9^B 1N9^5B TEMPERATURE COMPENSATED ZENER DIODE _JEDEC D0-T CASE ir , are temperature compensated Zener Diodes designed for applications where long-term voltage stability , (Ta=25°C) TYPE NO. ZENER VOLTAGE Vâ'ž § I ZT ZENER TEST CURRENT "^ZT mA MAX. ZENER IMPEDANCE , ) MH â 34 .30 (U) T â 032 .030 h .60 J (15.2) """I CASEA CBR1 Ser/'es CBR2 Ser/es t -
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AEG T95F 900 F82 thomson fsmi 2.5 silicon transistor SEMICON INDEXES skea 1/17 14a
Abstract: 1N936B 1N93TB 1N93Ã"B 1N939B TEMPERATURE COMPENSATED ZENER DIODE JEDEC DO-7 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 1N935B Series types are temperature compensated Zener Diodes designed for , Tolerance ±5 % ELECTRICAL CHARACTERISTICS (Ta=25°C) TYPE NO. ZENER ZENER TEST MAX. ZENER VOLTAGE , CASE OUTLINE DRAWINGS â 22 jH ci) MH â 34 .30 (U) T â 032 .030 h .60 J (15.2) """I -
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Abstract: CENTRAL SEMICONDUCTOR , ^ ODDOat-S 3 \ T^t/^IS^ 3 Watt Zener Diode â'¢ 5% Tolerance â'¢ Case C i EIZS. â'"â'"; Zener Test Zener Maximum Zener Zener Test Zener Maximum CENTRAL Voltage Current Impedance Piirrant CENTRAL Voltage Current Impedance Zener TYPE NO. Vz@lz Iz Zz burreni IZM TYPE , 20 27 77 C3Z43B 43 15 35 70 C3Z45B 45 15 37 67 C 5 Watt Zener Diode â'¢ 5% Tolerance â'¢ Case C C TYPE NO. CENTRAL TYPE NO. Zener Voltage Vz@lz Test Current lz Zener Impedance Zz -
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1n93a 1W93 1N93 1W935B
Abstract: Silicon-Based Technology Corp. Small-Signal Zener Diodes CAZ59C2V7 ­ CAZ59C51 Features and Advantages: Surface mount package for automatic assembly process High precision Zener voltage (VZ) (Note3.) Small Zener diode dynamic impedance(ZZT) Low standby reverse current(VR) (Note4.) Very high , self-heating effect. Electrical Characteristics : (@TA=25°C unless otherwise specified) Zener Part Type Marking Codes Voltage Max. Zener Impedance Vz@IZT ZZT@IZT IR@VR ZZK@IZK NomV -
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C3Z47B C3Z50B C3Z51B C3Z52B C3Z56B C3Z10B IN5374B in5374 IN5373B 5 watt zener diode IN5373 C3Z75B
Abstract: Silicon-Based Technology Corp. Small-Signal Zener Diodes CAZ23C2V7 ­ CAZ23C51 Features and Advantages: Surface mount package for automatic assembly process High precision Zener voltage (VZ) (Note3.) Small Zener diode dynamic impedance(ZZT) Low standby reverse current(VR) (Note4.) Very high , otherwise specified) Zener Part Type Marking Codes Voltage Max. Zener Impedance Vz@IZT , A25 A26 A27 A28 A29 A30 A31 A32 A34 A35 A36 A37 A39 A40 A41 A42 A43 A45 A46 A48 Silicon-Based Technology
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zener diode A29 ZENER A29 a23 zener a37 zener zener diode A36 diode ZENER A26 SC-59 MIL-STD-202 J-STD-020C CAZ59CXVX CAZ59C27 CAZ59C30
Abstract: -CENTRAL SEMICONDUCTOR 1 Watt Zener Diode "ti »T|icìacntJ3 â¡â¡D02t,4 i 5% Tolerance â'¢ Case B W~r-t/-i 3 -r-ti-is Zener Test Zener Zener Test Zener CENTRAL Voltage Current Impedance , â'¢ 25 C1Z200B 200 1.2 1500 2 Watt Zener Diode â'¢ 5% Tolerance â'¢ Case B Zener Test Zener Maximum Zener Test Zener Maximum CENTRAL Voltage Current Impedance CENTRAL Voltage Current Impedance , C2Z36B 36 10 50 35 C2Z39B 39 10 60 31 C2Z43B 43 9 70 28 * 1 Watt Zener Diode Available Silicon-Based Technology
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a36 zener CAZ23C24 a59 zener diode ZENER A26 ZENER A31 2 diode ZENER A37 CAZ23CXVX CAZ23C27 CAZ23C30 CAZ23C33 CAZ23C36 CAZ23C39
Abstract: 1989963 CENTRAL SEMICONDUCTOR â'¢ bï DE|nflT1b3 D000274 H CGSHtFill s@Bt«!!e@neflueCop c©rp. Centralâ"¢ Semiconductor Corp. 145 Adams Avenue Hauppauge, New York 11788 DESCRIPTION 61C "00274 r-v/w/ 1K37OA THRU 1N4372A SILICON ZENER DIODE 500mW, 2.k THRU 3-0 VOLTS JEDEC DO-35 CASE* The CENTRAL SEMICONDUCTOR 1N4370A Series types are Silicon Zener Diodes mounted in a hermetically sealed glass , »3-o7 CENTRAL SEMICONDUCTOR CASE OUTLINE DRAWINGS â 22 jH ci) MH â 34 .30 (U) T â 032 .030 h .60 J -
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1N4728A 1N4750A C1Z27B 1N4729A 1N4751A C1Z30B zener diode z9 b1 2 Watt Zener Diode C1Z5.1B Central semiconductor zener tlc 1125 Z9.1B
Abstract: !«!rinii'ifiB3 DESCRIPTION 61C 00277 tl SFlnflTHaB G000577 0 1N4678 THRU 1 N^f714 LOW LEVEL SILICON ZENER DIODE JEDEC DO-7 CASE The CENTRAL SEMICONDUCTOR 1N4678 Series types are Silicon Zener Diodes , Suffix) ±1 % ELECTRICAL CHARACTERISTICS (TA=25°C): JEDEC Type No. Nominal Zener Max. Reverse Leakage , Type No. Nominal Zener Voltage Vz@50uA (volts) Max. Reverse Leakage Current Max. Regulation Factor , »3-o7 CENTRAL SEMICONDUCTOR CASE OUTLINE DRAWINGS â 22 jH ci) MH â 34 .30 (U) T â 032 .030 h .60 J -
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1NA370A 1NA371A 1NA372A
Abstract: CENTRAL SEMICONDUCTOR bï DE J nfint3 â¡â¡â¡â¡Ebb S 10 Watt Zener Diode â'¢ 5% Tolerance â'¢ Case D (Do-4) â'¢ TYPE NO. Zener Voltage Vz@lz Test Current lz Zener Impedance Zz Maximum Zener Current IZM TYPE NO. Zener Voltage Vz@lz Test Current lz Zener Impedance Zz Maximum Zener Current IZM , 47 45 40 50 Watt Zener Diode â'¢ 5% Tolerance â'¢ Case E (Do-5) â'¢ Sl| ^ Lâ'"/ TYPE NO. Zener Voltage vz@lz Test Current lz Zener Impedance Zz Maximum Zener Current* IZM TYPE NO. Zener Voltage -
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1N4698 1N4699 1N4680 1N4681 1N4700 1N4701 IN4702 1N4683
Abstract: ­ THRU 1N55U6, A, B, C, D 3> ; LOW LEAKAGE, LOW NOISE ZENER DIODE JEDEC DO-T CASE KS DESCRIPTION The Central Semiconductor 1N551à Series types are Silicon Avalanche Zener Diodes designed for , ) ÃN55Ï8 '-'- Nominal Zener Voltage VZ@IZT (volts) ' ' '3.3 Test Current (ma) 20 Max. Zener Impedance , DEjnñTIbB â¡OODlfiE â¡ jlT»3-o7 CENTRAL SEMICONDUCTOR CASE OUTLINE DRAWINGS â 22 jH ci) MH â 34 -
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1N3993A 1N3994A 1N3995A 1N3996A 1N2990B 1N2993B 10 watt zener diode 50 Watt Zener Diode LN298 TLC 1050 diode Lz zener 1N3997A
Abstract: CENTRAL SEMICONDUCTOR r Central seniiâ'¬pit^yetor corp. Centralâ"¢ semiconductor corp. 145 Adams Avenue Hauppauge, New York 11788 na^Hba ÃDDGEÃI I 1 WATT ZENER DIODE 6.2-200 VOLTS, 5% AXIAL LEAD D015 EPOXY CASE C1Z 6.2B SERIES IMMiMl c c FEATURES: â'¢ 1 Watt at 50° C Ambient â'¢ Epoxy Molded Construction â'¢ High Temperature Capability i â'¢ Low Forward Voltage Drop TYPE NO. ZENER , â¡OODlfiE â¡ jlT»3-o7 CENTRAL SEMICONDUCTOR CASE OUTLINE DRAWINGS â 22 jH ci) MH â 34 .30 (U) T -
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1N5519 1N5520 1N5521 1n523 1s5531 1s553 1N5528 1N5526 1N5525 000E7
Abstract: , Totat (Reduce Vcc so that v1° = 10-5 Vdc) 4.0 6.5 Ã".5 mA Zener Regulating Voltage 10 9 118 12.8 V , Admittance Y12 0 + ¡3.4 jumho Forward Transfer Admittance V21 110 + ¡140 mmhos Output Admittance (Pin 3 -
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C1Z10B C1Z11B C1Z12B C1Z13B C1Z14B C1Z15B Z6.8B Z12B Z6.2B DIODE Z8.2B D015
Abstract: output polarity protection diode ZD: Surge absorption zener diode Tr : NPN output transistor ZD , protection diode ZD: Surge absorption zener diode Tr : PNP output transistor â'" HUMAN MACHINE , .) Cable Hook Groove MS-GX6-1 M3 x 0.5 mm 0.020 in tapped hole or ø3.4 mm ø0.134 in hole 22 mm 0.866 in ø3.4 mm ø0.134 in hole Refer to General precautions. GX-8 type If mounting , sensor with a nut, the mounting hole diameter should be ø3.4 mm ø0.134 in. â'¢ The tightening -
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MC1364P CA3064 MC1364 Direct Replacement
Abstract: eight NPN darlington diver CIRCUIT SCHEMATIC pairs. Each input has a Zener diode and 10.5ki2 , ) V mA Percent duty cycle £'34% Output saturation voltage Limits Test conditions Panasonic
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0118 transistor SUS304 MS-GXL15 GX-15 MS-A15F MS-A15H
Abstract: to any positive voltage source greater than the internal zener regulating voltage through a suitable , Drain at 10.5 Volts â'¢t 4 V,o(i) = 10.5 V 4 6.5 9.5 mA Zener Regulated Voltage - DC Supply Voltage , mmho - Reverse Transfer Admittance *12 0 +¡3.4 Mmho - Forward Transfer Admittance , »21 Rs = , internally used AGO amplifier, and a zener voltage regulator. The 45-MHz amplifier limiter combination , PACKAGE 92CS- 22406 Fig.4 â'" Test setup: Measurement of total device dissipation, zener regulating -
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54592P M54592P
Abstract: +158 Symbols â'¦ ZD: Surge absorption zener diode Tr : NPN output transistor NPN output type GL , Symbols â'¦ ZD: Surge absorption zener diode Tr : NPN output transistor Amplifier Built-in , (Depth: 8 mm 0.315 in or more) or ø3.4 mm ø0.134 in thru-hole 11.5 mm 0.453 in ø2.4 mm ø0.094 in , with a nut, the thru-hole diameter should be ø3.4 mm ø0.134 in. â'¢ Screws, nuts or washers are , Top sensing type, GL-18H/18HL type D M3 × 0.5 mm 0.020 in tapped holes or ø3.4 mm 0.134 in -
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CA3064E RCA-CA3064 CA3044 CA3044V1 22406 RCA Television Schematic Diagram television internal parts block diagram matching transistors H-1561 ICAN-5831
Abstract: the peak intensity (3) Thermal resistance: RthJS (Junction to Solder) (4) A zener diode is included , 7000K 0.33 A21 A11 A32 A22 A12 A43 A33 A23 A13 0.32 A42 A44 A34 , 0.3331 0.3213 0.3371 A14 A24 A34 A44 CIE X CIE Y CIE X CIE Y CIE X , Cathode Anode 1 2 Zener Diode (1) All dimensions are in millimeters. (2) Scale : none (3 , Resin +Phosphor â'¤ Body Thermo Plastic Heat-resistant Polymer â'¥ Zener Diode Panasonic
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GL-18HL
Abstract: OPTIONS Symbols â'¦ ZD: Surge absorption zener diode Tr : PNP output transistor Max. load current , Load Usersâ'™ circuit Symbols â'¦ ZD: Surge absorption zener diode Tr : PNP output transistor , '¢ To mount the sensor with a nut, the thru-hole diameter should be ø3.4 mm ø0.134 in. With the , or more) or ø3.4 mm ø0.134 in thru-hole 11.5 mm 0.453 in If mounting using nut and washers , thru-hole M3 × 0.5 mm 0.020 in tapped hole or ø3.4 mm ø0.134 in thru-hole diameter should be ø3.4 mm Seoul Semiconductor
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4700K 5600K 4200K 4500K
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