ZCP0545A - Datasheet Archive

 

MODE VERTICAL IGBT ZCP0545A ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). MAX. This IGBT combines the

 

P-CHANNEL ENHANCEMENT MODE VERTICAL IGBT ZCP0545A ZCP0545A ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). MAX. This IGBT combines the high input impedance of the DMOSFET with the high current density of the BJT. PARAMETER SYMBOL MIN. UNIT CONDITIONS. FEATURES Forward Drain-Source Breakdown Voltage BVDSS -450 V Reverse Drain-Source Breakdown Voltage (4) BVSD -20 V * * EXTREMELY LOW ON STATE VOLTAGE NO NEED TO DERATE FOR HIGHER TEMPERATURES * EASE OF PARALLELING Gate-Source Threshold Voltage VGS(th) -1 ID=-1mA, VDS= VGS * * EXCELLENT TEMPERATURE IMMUNITY HIGH INPUT IMPEDANCE Gate-Body Leakage Zero Gate Voltage Drain Current Drain Source Saturation Voltage (1) TYP. ZCP0545A ZCP0545A VGS=0V -3.5 V IGSS 20 nA VGS=± 20V, VDS=0V * IDSS -20 -2 µA mA VDS=max. rating, VGS=0 VDS=0.8 x max. rating, VGS=0V, Tamb=125°C (2) S E-Line TO92 Compatible REVERSE BLOCKING CHARACTERISTIC WHICH IS INDEPENDENT OF GATE BIAS * D G LOW INPUT CAPACITANCE VDS(SAT) -3 -3 V V ID=-500mA, VDS=-10 V ID=-200mA, VDS=-5 V Static Drain-Source RDS(on) On-State Resistance (1) 6 VGS=-10V,ID=-500mA Input Capacitance (2) 120 pF Common Source Coss Output Capacitance (2) 20 pF Reverse Transfer Capacitance (2) Crss 5 pF Switching Times (2)(3) ton 150 ns 350 ns * CHARACTERISED FOR LOGIC LEVEL DRIVE APPLICATIONS Ciss toff 250 VDS=-25 V, VGS=0V, f=1MHz VDD -25V, VGEN=-10V ID=250mA, RGS=50 (1) Measured under pulsed conditions. Width=300µs. Duty cycle 2% (2) Sample test. (3) Switching times measured with 50 source impedance and