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Part : ZC830BTA Supplier : Zetex Semiconductors Manufacturer : Chip One Exchange Stock : 3,038 Best Price : - Price Each : -
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ZC830A Datasheet

Part Manufacturer Description PDF Type
ZC830A Zetex Semiconductors DIODE VAR CAP SINGLE 25V 9PF 3SOT23 Original
ZC830A Zetex Semiconductors SOT23 SILICON VARIABLE CAPACITANCE DIODE Original
ZC830A Zetex Semiconductors SILICON 28V HYPERABRUPT VARACTOR DIODES Original
ZC830A Ferranti Semiconductors SOT-23 Transistors & Diodes 1983 Scan
ZC830A Ferranti Semiconductors Quick Reference Guide 1985 Scan
ZC830ATA Zetex Semiconductors 28 V, silicon hyperabrupt varactor diode Original
ZC830ATA Zetex Semiconductors DIODE VAR CAP SINGLE 25V 9PF 3SOT-23 T/R Original
ZC830ATA Zetex Semiconductors Variable Capacitance Diodes (Varicaps, Varactors), Discrete Semiconductor Products, DIODE VAR CAP 10PF 25V SOT23-3 Original
ZC830ATC Zetex Semiconductors DIODE VAR CAP SINGLE 25V 9PF 3SOT-23 T/R Original
ZC830ATC Zetex Semiconductors Variable Capacitance Diodes (Varicaps, Varactors), Discrete Semiconductor Products, DIODE VAR CAPACITANCE SOT23-3 Original

ZC830A

Catalog Datasheet MFG & Type PDF Document Tags

marking NB D9 sot-23

Abstract: ZC825 SOT23 these devices. THE ZC800, ZC820 and ZC830A SERIES A series of professional range devices for very high , Microminiature SOT-23 High reliability glass DO-7 NOT TO SCALE # E-LINE SOT-23 ZC820 Series ZC830A Series , ZC830A Series Pd* 200 mW Junction Temperature - ZC800 Series Tj 175 °C ZC820 Series Tj 125 °C ZC830A , 6b - ZC830A SERIES FOR THICK FILM HYBRID CIRCUITS. CHARACTERISTICS (at 25°C ambient temperature*. , C2/C20, f = 1 MHz Device Marking SOT-23 Min. Nom. Max. Min. Max. ZC830A 9.0 10 11.0 300 4.5 6.0
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ZC801 ZC802 ZC803 ZC821 ZC822 ZC823 marking NB D9 sot-23 ZC825 SOT23 ZC825 SOT-23 marking 564 sot23-6 ZC825 ZC804 ZC805 ZC806

ZC832A

Abstract: ferranti code stamped on the body of the device as follows: ZC830A. J1 2C831A ZC832A ZC833A ZC834A ZC835A , i FERRANTI semiconductors ® ZC830A Series Silicon Variable Capacitance Diodes DESCRIPTION , measuring 10 x 8 x 0.6 mm. i ® ZC830A Series ELECTRICAL CHARACTERISTICS (at 25"C ambient temperature). , = 1 MHz) Min. Nom. Max. Min. Max. ZC830A 9.0 10 11.0 300 4.5 6.0 ZC831A 13.5 15 16.5 300 4.5 , or without tracking tolerance as required. ZC830A Series. Page 2 ZC830A Series DIODE CAPACITANCE
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FMMD914 ZC836A ferranti ZC836B sot-23 297 BAL99 BAR99 FMMD6050 BAV70 BAV74

ZC800

Abstract: ZC801 % add suffix A ± 5% add suffix B TABLE 6b - ZC830A SERIES FOR THICK FILM HYBRID CIRCUITS , . Max. ZC830A 9.0 10 11.0 300 4.5 6.0 J1 ZC831A 13.5 15 16.5 300 4.5 6.0 J3 ZC832A 19.8 22 24.2 200 , . min. max. min. ZC830A 25 9.0 10 11.0 4.5 6.0 300 ZC831A 25 13.5 15 16.5 4.5 6.0 300 ZC832A 25 19.8 , available or desirable are typical applications. ZC800, ZC820 and ZC830A Series Parameter (Tamb = 25 , ZC800 Series Pd* 400 mW ZC820 Series Pd* 300 mW ZC830A Series Pd* 200 mW Junction Temperature - ZC800
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ZC82 ZC824 ZC826

ZC800

Abstract: ZC801 % add suffix A ± 5% add suffix B TABLE 6b - ZC830A SERIES FOR THICK FILM HYBRID CIRCUITS , . Max. ZC830A 9.0 10 11.0 300 4.5 6.0 J1 ZC831A 13.5 15 16.5 300 4.5 6.0 J3 ZC832A 19.8 22 24.2 200 , desirable are typical applications. ZC800, ZC820 and ZC830A Series Parameter (Tamb = 25°C) Symbol Value , Series Pd* 400 mW ZC820 Series Pd* 300 mW ZC830A Series Pd* 200 mW Junction Temperature - ZC800 Series Tj 175 °C ZC820 Series Tj 125 °C ZC830A Series Tj 125 °C Storage Temperature Range Tstg -65 to
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Diode Marking z3 SOT-23

Abstract: dual diode marking A3 code stamped on the body of the device as follows: ZC830A. J1 2C831A ZC832A ZC833A ZC834A ZC835A , i FERRANTI semiconductors ® ZC830A Series Silicon Variable Capacitance Diodes DESCRIPTION , measuring 10 x 8 x 0.6 mm. i ® ZC830A Series ELECTRICAL CHARACTERISTICS (at 25"C ambient temperature). , = 1 MHz) Min. Nom. Max. Min. Max. ZC830A 9.0 10 11.0 300 4.5 6.0 ZC831A 13.5 15 16.5 300 4.5 , or without tracking tolerance as required. ZC830A Series. Page 2 ZC830A Series DIODE CAPACITANCE
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Diode Marking z3 SOT-23 dual diode marking A3 marking J6 transistors code J4 diode W6 13A Diode j4 DIODE schottky sot 23 BAV99 C9/C20 ZC2800E ZC2810E ZC2811E ZC5800E

ZC825 SOT-23

Abstract: ZC2800E % add suffix A ± 5% add suffix B TABLE 6b - ZC830A SERIES FOR THICK FILM HYBRID CIRCUITS , . Max. ZC830A 9.0 10 11.0 300 4.5 6.0 J1 ZC831A 13.5 15 16.5 300 4.5 6.0 J3 ZC832A 19.8 22 24.2 200 , . min. max. min. ZC830A 25 9.0 10 11.0 4.5 6.0 300 ZC831A 25 13.5 15 16.5 4.5 6.0 300 ZC832A 25 19.8 , HD4A 7D BZX84-C3V9 W8 ZC830 J1 BZX84-C4V3 W9 ZC830A - BZX84-C4W Z1 ZC830B - BZX84-C5V1 22 , ZC830A Series Parameter (Tamb = 25°C) Symbol Value Unit Reverse Breakdown Voltage VR 25 Volts Forward
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SOT-23 MARKING w5 Z6 DIODE diode marking w8 marking Z6 diode marking x6

NB J7

Abstract: ZC821 these devices. THE ZC800, ZC820 and ZC830A SERIES A series of professional range devices for very high , Microminiature SOT-23 High reliability glass DO-7 NOT TO SCALE # E-LINE SOT-23 ZC820 Series ZC830A Series , ZC830A Series Pd* 200 mW Junction Temperature - ZC800 Series Tj 175 °C ZC820 Series Tj 125 °C ZC830A , 6b - ZC830A SERIES FOR THICK FILM HYBRID CIRCUITS. CHARACTERISTICS (at 25°C ambient temperature*. , C2/C20, f = 1 MHz Device Marking SOT-23 Min. Nom. Max. Min. Max. ZC830A 9.0 10 11.0 300 4.5 6.0
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NB J7 marking NB SOT-23 diode marking x7 Y1 SOT-23 DO diode marking 5d ZC5800

j4a diode

Abstract: ZC830B MAX Minimum Q @ VR=3V f=50MHz Capacitance Ratio C2 / C20 at f=1MHz MIN MAX ZC830A , PARTMARK ZC830 J1S ZC830A J1A ZC830B J1B ZC831 J3S ZC831A J3A ZC831B
Zetex Semiconductors
Original
j4a diode diode J4S ZC830/A/B ZC836/A/B ZC832 ZC832B ZC833 ZC833B
Abstract: Minimum Q @ Vr =3V f=50MHz Capacitance Ratio a t^ z MIN NOM MAX MIN MAX ZC830A , PARTMARK PART NO PARTMARK PART NO PARTMARK ZC830 J1S ZC830A J1A ZC830B J1B -
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ZC834 ZC834B ZC835 ZC835B ZC836

zc826 IC

Abstract: . ZC800, ZC820 and ZC830A Series T-oi-n j ; Parameter (TotI,b=25°C) Reverse Breakdown Voltage Forward Current Power Dissipation - ZC800 Series ZC820 Series ZC830A Series Junction Tem perature-ZC800 Series ZC820 Series ZC830A Series Storage Temperature Range Symbol Vr If P d* Pd * P d* Value 25 , ZC801 ZC802 ZC803 ZC804 ZC805 ZC806 SOT-23 ZC830A ZC831A ZC832A ZC833A ZC834A ZC835A ZC836A 9.0 13.5
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zc826 IC

diode J4S

Abstract: j4a diode MAX ZC830A 9.0 10.0 11.0 ZC831A 13.5 15.0 16.5 ZC832A 19.8 22.0 , ZC830 J1S ZC830A J1A ZC830B J1B ZC831 J3S ZC831A J3A ZC831B J3B
Zetex Semiconductors
Original
j4s diode J5B SOT23 832A DIODE j5s 831A DSA003721

zener diode marking E7

Abstract: diode marking w8 SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION DIODES DIODES Device Device Device Device Type marking Type marking BAL99 E2 BZX84-C43 X6 BAR99 E3 BZX84-C47 X7 BAS16 A3 FMMD914 5D BAV70 A4 FMMD6050 5A BAV74 JA HD2A 5D BAV99 A7 BAW56 Al HD3A 4D BZX84-C2V7 W4 HD4A 7D BZX84-C3V0 W5 ZC830 J1 BZX84-C3V3 W6 ZC830A - BZX84-C3V6 W7 , /C20 f = 50MHz Volts pF max. min. typ. max. min. max. min. ZC830A 25 9.0 10 11.0 4.5 6.0 300
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BZX84-C27 zener diode marking E7 marking J7 diode diode marking e8 marking W6 diode diode MARKING c9 BZX84-C4V7 BZX84-C5V6 BZX84-C6V2 BZX84-C6V8 BZX84-C7V5 BZX84-C8V2

BAV99 Zener diode

Abstract: transistors bav99 Al HD3A 4D BZX84-C2V7 W4 HD4A 7D BZX84-C3V0 W5 ZC830 J1 BZX84-C3V3 W6 ZC830A - BZX84-C3V6 , /C20 f = 50MHz Volts pF max. min. typ. max. min. max. min. ZC830A 25 9.0 10 11.0 4.5 6.0 300
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BAV99 Zener diode transistors bav99 marking code J1 sot23 Marking c9 SOT23 BAV99a7 marking w7 sot-23 BZX84

ZC831

Abstract: diode J4S CHARACTERISTICS (at Tamb=25°C) Nominal Capacitance (pF) V,=2V, f=1MHz PART NO MIN ZC830A ZC831A ZC832A ZC833A , ZC833 ZC834 ZC835 ZC836 PARTMARK J1S J3S J4S J2S J5S J6S J7S PART NO ZC830A ZC831A ZC832A ZC833A ZC834A
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Q836/

BAV70-A4

Abstract: Diode Marking z3 SOT-23 J1 BZX84-C3V3 W6 ZC830A - BZX84-C3V6 W7 ZC830B _ BZX84-C3V9 W8 ZC831 J3 BZX84-C4V3 W9 , . min. ZC830A 25 9.0 10 11.0 4.5 6.0 300 ZC831A 25 13.5 15 16.5 4.5 6.0 300 ZC832A 25 19.8 22 24.2
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BAV70-A4 BAS 20 SOT23 SOT23 DIODE marking CODE AV BAV70A marking Z6 SOT-23 Capacitance SOT diode marking Z3
Abstract: NO MIN ZC830A ZC831A ZC832A ZC833A ZC834A ZC835A ZC836A 9.0 13.5 19.8 29.7 42.3 61.2 90.0 NOM 10.0 , ZC834 ZC835 ZC836 PARTMARK J1S J3S J4S J2S J5S J6S J7S PART NO ZC830A ZC831A ZC832A ZC833A ZC834A ZC835A -
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5D marking DIODE BAS16

Abstract: Zener Diode LF marking ZC830 J1 BZX84-C3V3 W6 ZC830A - BZX84-C3V6 W7 ZC830B _ BZX84-C3V9 W8 ZC831 J3 BZX84-C4V3 W9 , . min. ZC830A 25 9.0 10 11.0 4.5 6.0 300 ZC831A 25 13.5 15 16.5 4.5 6.0 300 ZC832A 25 19.8 22 24.2
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5D marking DIODE BAS16 Zener Diode LF marking DIODE MARKING CODE TW 7y sot23 marking C20 sot-23 Ferranti Semiconductors

FMMD914

Abstract: FMMD6050 W6 ZC830A - BZX84-C3V6 W7 ZC830B _ BZX84-C3V9 W8 ZC831 J3 BZX84-C4V3 W9 ZC831A â , Type Vr Ctot C9/C20 f = 50MHz Volts pF max. min. typ. max. min. max. min. ZC830A 25 9.0 10
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sot-23 MARKING CODE A4 W6 Diode FMMD marking Z1 sot marking code SS SOT23 marking J1 sot-23 150-C

Diode Marking z3 SOT-23

Abstract: schottky diode marking A7 Type Vr Ctot C2/C20 f = 50MHz Volts pF max. min. typ. max. min. max. min. ZC830A 25 9.0 10 , J1 BZX84-C4V3 W9 ZC830A - BZX84-C4W Z1 ZC830B - BZX84-C5V1 22 ZC831 J3 BZX84-C5V6 Z3
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ZC2810-ZC2811 schottky diode marking A7 marking code X5 SOT23 MARKING X4 SOT23 X2 marking code sot 23 Y3 SOT23 Z4 SOT23 ZC2800 ZC2810 ZC2811 ZC281 FMMD109

marking z7

Abstract: Z4 SOT23 SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION Device Type DIODES Device marking Device Type DIODES Device marking BAV70 A4 BZX84-C43 X6 BAW4 JA BZX84-C47 X7 BAV99 A7 FMMD109 4A BAW56 A1 FMMD914 5D BZX84 C2V7 W4 FMMD3102 4C BZX84-C3V0 W5 HD2A 5D BZX84-C3V3 W6 HD3A 4D BZX84-C3V6 W7 HD4A 7D BZX84-C3V9 W8 ZC830 J1 BZX84-C4V3 W9 ZC830A - BZX84-C4W Z1 ZC830B - BZX84-C5V1 22 ZC831 J3 BZX84-C5V6 Z3 ZC831A - BZX84-C6V2 Z4 ZC831B - BZX84-C6V8 Z5
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marking z7 BZX84C18 BZX84C5V6 z3 C5V6 marking Y4 C3V9 BZX84-C9V1 BZX84-C10 BZX84-C11 BZX84-C12 BZX84-C13 BZX84-C15

shockley diode application

Abstract: shockley diode * ZETEX ZC830A Spice Model Last revision 4/3/92 * .MODEL ZC830A D IS= 5.355E-15 N= 1.08 RS= 0.1161 XTI , Zetex ZC830A Variable Capacitance Diode SPICE Model, Illustrating Parasitic and ESR Components. AN23 , example of a variable capacitance diode with options * ZETEX ZC830A Spice Model Last revision 4/3/92 * .MODEL ZC830A D IS= 5.355E-15 N= 1.08 RS= 0.1161 XTI =3 + EG= 1.11 CJO= 19.15E-12 M= 0.9001 VJ= 2.164 FC , 5V, 0.52 FOR 10V OR 0.46 FOR 20V BIAS. * Figure 5 Zetex ZC830A Variable Capacitance Diode SPICE
Zetex Semiconductors
Original
shockley diode application shockley diode diode shockley transistor bipolar driver schematic shockley diode SPICE MODELS spice shockley diode F632-79
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