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YA868C15

Catalog Datasheet MFG & Type PDF Document Tags

mp2a5100

Abstract: ya868c12 Device Name DATE CHECKED : Type Name : YA868C15R Spec. No. : NAME DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatever for the use of any t h ird pa rt y n o r u s ed f o r th e m an uf a c tu rin g p u rp o se s wit h o u t the express written consent Fuji Electric Co.,Ltd. S P E C I F I C AT I O N ( T E N TAT I V E ) MS5D1808 SILICON
Fuji Electric
Original
mp2a5100 ya868c12 YA868C15 YG865C10 2sk4004 diode 3a05 RH011 2007-10B120FIS

YA868C15

Abstract: YG868C12R TS868C12R YA862C15R YG862C15R TS862C15R YA865C15R YG865C15R TS865C15R PH865C15 YA868C15R YG868C15R
Fuji Electric
Original
H04-004-07 H04-004-06 H04-004-03

YA868C15

Abstract: ya868c12 YA868C15R (30A) (150V / 30A ) [0401] High Voltage Schottky barrier diode Outline drawings, mm 10+0.5 0 30 Tc=25°C MAX. 3.7±0.2 IO V V A 1.2 0 14 -0.5 150 0.90 15±0.2 Characteristics YA868C15R Units Condition 6.4±0.2 2.7±0.1 Major characteristics VRRM , Approximate mass Recommended torque 0.3 to 0.5 2 N·m g (150V / 30A ) YA868C15R (30A , (V) 1000 YA868C15R (30A) (150V / 30A ) Surge Current Ratings (max.) Surge Capability
Fuji Electric
Original
YG862C12R YA865C12R YG975C6R YG972S6 yg862c15 yg865c15 yg971s6 YA862C12R TS862C12R YG865C1 YA961S6R