2002/95/EC XP04654 XP4654 2SC3757 2SA1738 SC-88 SJJ00188BED - Datasheet Archive

 

Composite Transistors XP04654 (XP4654) Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2)

 

This product complies with the RoHS Directive (EU 2002/95/EC 2002/95/EC). Composite Transistors XP04654 XP04654 (XP4654 XP4654) Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) 0.2±0.05 5 0.12+0.05 ­0.02 1.25±0.10 2.1±0.1 Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b ur o iz is ro th u e n w er fo fo ot sin in r y r a av g fo ou n a o rm r y ila ur at pa tro ble da io tie ub f ta n, n le or s pl ce th th he ea . is e ets se m ren . ay e co ha wa nt ac ve l o to ca f ou ur us r p sa ed ro le yo du s of u. ct fic lin es eu . p. 4 5° · Two elements incorporated into one package · Reduction of the mounting area and assembly cost by one half 1 3 2 0.2±0.1 6 Features Unit: mm (0.425) For high-speed switching (0.65) (0.65) Basic Part Number 1.3±0.1 2.0±0.1 · 2SC3757 2SC3757 + 2SA1738 2SA1738 V VCES 40 V VEBO 5 V Collector current IC 100 mA Peak collector current ICP 300 mA Collector-base voltage (Emitter open) VCBO -15 V Collector-emitter voltage (E-B short) VCES -15 V Emitter-base voltage (Collector open) VEBO -4 V Collector current IC -50 mA Peak collector current Th Unit 40 Emitter-base voltage (Collector open) Overall Rating VCBO Collector-emitter voltage (E-B short) Tr2 Symbol Collector-base voltage (Emitter open) ICP -100 mA Total power dissipation PT 150 mW Junction temperature Tj 150 Tstg -55 to +150 4: Emitter (Tr2) 5: Base (Tr2) 6: Collector (Tr1) SMini6-G1 Package Marking Symbol: ED Internal Connection 6 5 Tr1 1 4 Tr2 2 3 °C Storage temperature 1: Emitter (Tr1) 2: Base (Tr1) 3: Collector (Tr2) EIAJ: SC-88 SC-88 0 to 0.1 Parameter Tr1 0.9±0.1 Absolute Maximum Ratings Ta = 25°C 0.9+0.2 ­0.1 10° °C Note) The part number in the parenthesis shows conventional part number. Publication date: February 2004 SJJ00188BED SJJ00188BED 1 This product complies with the RoHS Directive (EU 2002/95/EC 2002/95/EC). XP04654 XP04654 Electrical Characteristics Ta = 25°C ± 3°C · Tr1 Parameter Symbol Collector-base cutoff current (Emitter open) ICBO VCB = 40 V, IE = 0 Conditions Emitter-base cutoff current (Collector open) IEBO VEB = 4 V, IC = 0 Forward current transfer ratio hFE VCE = 1 V, IC = 10 mA Collector-emitter saturation voltage VCE(sat) IC = 10 mA, IB = 1 mA Base-emitter saturation voltage VBE(sat) Min Typ IC = 10 mA, IB = 1 mA Max Unit 0.1 µA 0.1 0.17 µA 320 60 0.25 V 1.0 VCB = 10 V, IE = -10 mA, f = 200 MHz Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b ur o iz is ro th u e n w er fo fo ot sin in r y r a av g fo ou n a o rm r y ila ur at pa tro ble da io tie ub f ta n, n le or s pl ce th th he ea . is e ets se m ren . ay e co ha wa nt ac ve l o to ca f ou ur us r p sa ed ro le yo du s of u. ct fic lin es eu . p. Transition frequency fT 450 V MHz Cob VCB = 10 V, IE = 0, f = 1 MHz 2 Turn-on time ton Refer to the switching time measurement 17 ns Turn-off time toff circuit 17 ns Storage time tstg 10 ns Collector output capacitance (Common base, input open circuited) 6 pF Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. · Tr2 Parameter Symbol Collector-base cutoff current (Emitter open) ICBO VCB = -8 V, IE = 0 Emitter-base cutoff current (Collector open) IEBO VEB = -3 V, IC = 0 Forward current transfer ratio hFE1 VCE = -1 V, IC = -10 mA 50 hFE2 VCE = -1 V, IC = -1 mA 30 VCE(sat) IC = -10 mA, IB = -1 mA Collector-emitter saturation voltage Transition frequency fT Conditions VCB = -10 V, IE = 10 mA, f = 200 MHz Min Typ 800 Unit µA - 0.1 µA 150 - 0.1 Max - 0.1 - 0.2 V 1 500 MHz Collector output capacitance (Common base, input open circuited) Cob VCB = -5 V, IE = 0, f = 1 MHz 1 pF Turn-on time ton Refer to the switching time measurement circuit 12 ns Turn-off time toff 20 ns Storage time tstg 19 ns Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Common characteristics chart Th PT Ta Total power dissipation PT (mW) 250 200 150 100 50 0 0 40 80 120 160 Ambient temperature Ta (°C) 2 SJJ00188BED SJJ00188BED This product complies with the RoHS Directive (EU 2002/95/EC 2002/95/EC). XP04654 XP04654 Characteristics charts of Tr1 Switching time measurement circuit ton , toff test circuit tstg test circuit 0.1 µF 0.1 µF VOUT VOUT A 220 50 VIN = 10 V 3.3 k VCC = 3 V 3.3 k 50 VIN = 10 V 0.1 µF 90 500 VCC = 10 V 500 50 VBB = 2 V Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b ur o iz is ro th u e n w er fo fo ot sin in r y r a av g fo ou n a o rm r y ila ur at pa tro ble da io tie ub f ta n, n le or s pl ce th th he ea . is e ets se m ren . ay e co ha wa nt ac ve l o to ca f ou ur us r p sa ed ro le yo du s of u. ct fic lin es eu . p. VBB = -3 V 1 k 910 10% VIN 10% VIN 10% 90% VOUT VOUT 90% ton toff 10% tstg (Waveform at A) VCE(sat) IC IB = 3.0 mA 2.5 mA 80 2.0 mA 1.5 mA 60 1.0 mA 40 0.5 mA 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 10 1 25°C 0.01 0.1 Th Transition frequency fT (MHz) Forward current transfer ratio hFE 10 300 Ta = 75°C 25°C -25°C 10 Collector current IC (mA) 100 1 300 200 100 -100 Emitter current IE (mA) SJJ00188BED SJJ00188BED 100 1 000 Cob VCB 400 -10 10 Collector current IC (mA) 500 0 -1 Ta = -25°C 25°C 75°C 0.1 100 VCB = 10 V Ta = 25°C 400 1 1 fT I E 500 0 0.1 10 0.01 1 600 VCE = 1 V 100 100 Collector current IC (mA) hFE IC 200 Ta = 75°C -25°C 0.1 Collector-emitter voltage VCE (V) 600 VBE(sat) IC IC / IB = 10 -1 000 Collector output capacitance C (pF) (Common base, input open circuited) ob Collector current IC (mA) 100 100 Base-emitter saturation voltage VBE(sat) (V) Ta = 25°C Collector-emitter saturation voltage VCE(sat) (V) IC VCE 120 6 5 IE = 0 f = 1 MHz Ta = 25°C 4 3 2 1 0 1 10 100 Collector-base voltage VCB (V) 3 This product complies with the RoHS Directive (EU 2002/95/EC 2002/95/EC). XP04654 XP04654 Characteristics charts of Tr2 Switching time measurement circuit ton , toff test circuit VCC = -1.5 V VBB VIN VBB = -10 V VCC = -3 V 62 VOUT 2 k 0.1 µF tstg test circuit 52 508 0.1 µF VIN 51 Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b ur o iz is ro th u e n w er fo fo ot sin in r y r a av g fo ou n a o rm r y ila ur at pa tro ble da io tie ub f ta n, n le or s pl ce th th he ea . is e ets se m ren . ay e co ha wa nt ac ve l o to ca f ou ur us r p sa ed ro le yo du s of u. ct fic lin es eu . p. 51 30 VOUT 34 10% VIN 0 90% 90% VOUT ton VIN = -5.8 V VBB = Ground tstg toff VIN = 9.8 V VBB = -8.0 V VIN = 9.0 V IC VCE VCE(sat) IC Collector current IC (mA) -100 Ta = 25°C IB = -600 µA -500 µA -400 µA -40 -300 µA -30 -200 µA -20 -100 µA -10 0 -2 0 -4 -6 -8 -10 -12 Collector-emitter saturation voltage VCE(sat) (V) -60 -50 -10 Ta = 75°C 25°C -25°C -1 - 0.1 - 0.01 -1 Th Ta = 75°C 40 0 - 0.1 25°C -25°C -1 -10 Collector current IC (mA) 4 -10 -100 2 400 Transition frequency fT (MHz) Forward current transfer ratio hFE 160 -100 -1 000 - 0.01 -1 1 200 800 400 10 Emitter current IE (mA) SJJ00188BED SJJ00188BED -100 -1 000 Cob VCB 1 600 1 -10 Collector current IC (mA) VCB = -10 V f = 200 MHz Ta = 25°C 2 000 0 Ta = -25°C 25°C 75°C -1 fT I E 200 IC / IB = 10 -10 Collector current IC (mA) VCE = -10 V 80 -100 - 0.1 hFE IC 120 VBE(sat) IC IC / IB = 10 Collector-emitter voltage VCE (V) 240 90% 90% VOUT 10% Base-emitter saturation voltage VBE(sat) (V) 0 100 Collector output capacitance C (pF) (Common base, input open circuited) ob VIN 2.4 2.0 IE = 0 f = 1 MHz Ta = 25°C 1.6 1.2 0.8 0.4 0 -1 -10 -100 Collector-base voltage VCB (V) Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b ur o iz is ro th u e n w er fo fo ot sin in r y r a av g fo ou n a o rm r y ila ur at pa tro ble da io tie ub f ta n, n le or s pl ce th th he ea . is e ets se m ren . ay e co ha wa nt ac ve l o to ca f ou ur us r p sa ed ro le yo du s of u. ct fic lin es eu . p. 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