XP4216 UN1216 - Datasheet Archive

XP4216 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 6 2 5 4 UN1216 × 2 elements s

Composite Transistors XP4216 XP4216 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 6 2 5 4 UN1216 UN1216 × 2 elements s Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Ratings Unit Collector to base voltage Rating Collector to emitter voltage of element Collector current VCBO 50 V VCEO 50 V IC 100 mA Total power dissipation PT 150 mW Overall Junction temperature Tj 150 Tstg 55 to +150 0.2±0.1 1 : Emitter (Tr1) 4 : Emitter (Tr2) 2 : Base (Tr1) 5 : Base (Tr2) 3 : Collector (Tr2) 6 : Collector (Tr1) EIAJ : SC88 SMini Type Package (6pin) °C °C Storage temperature +0.05 0 to 0.1 q 0.12 0.02 s Basic Part Number of Element 0.7±0.1 0.9±0.1 0.2 q Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 1 3 2.0±0.1 q 0.425 0.65 s Features 1.25±0.1 0.65 0.425 0.2±0.05 2.1±0.1 Marking Symbol: 8U Internal Connection 1 Tr1 2 3 s Electrical Characteristics Parameter Collector to base voltage Collector to emitter voltage 6 5 Tr2 4 (Ta=25°C) Symbol Conditions min VCBO IC = 10µA, IE = 0 typ max 50 50 Unit V VCEO IC = 2mA, IB = 0 ICBO VCB = 50V, IE = 0 ICEO VCE = 50V, IB = 0 0.5 µA IEBO VEB = 6V, IC = 0 0.01 mA Forward current transfer ratio hFE VCE = 10V, IC = 5mA Collector to emitter saturation voltage VCE(sat) IC = 10mA, IB = 0.3mA Output voltage high level VOH VCC = 5V, VB = 0.5V, RL = 1k Output voltage low level VOL VCC = 5V, VB = 2.5V, RL = 1k Transition frequency fT VCB = 10V, IE = 2mA, f = 200MHz Input resistance R1 Collector cutoff current Emitter cutoff current V 0.1 160 460 0.25 4.9 V V 0.2 150 30% µA 4.7 V MHz +30% k 1 Composite Transistors XP4216 XP4216 PT - Ta Total power dissipation PT (mW) 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) IC - VCE VCE(sat) - IC 100 Collector current IC (mA) IB=1.0mA 0.9mA 0.8mA 0.7mA 0.6mA 120 100 0.5mA 0.4mA 80 0.3mA 60 0.2mA 40 20 0.1mA 0 2 4 6 8 10 Collector to emitter voltage VCE 12 IC/IB=10 30 10 3 1 0.3 Ta=75°C 25°C 0.1 0.03 0.01 0.1 0 (V) 1 3 10 10000 25°C 200 150 100 50 30 100 1 (mA) 3 2 30 100 300 1000 VIN - IO 100 VO=5V Ta=25°C 1000 VO=0.2V Ta=25°C 30 10 Input voltage VIN (V) 3 10 Collector current IC (mA) 3000 Output current IO (µA) Collector output capacitance Cob (pF) 25°C 250 IO - VIN 4 300 100 30 10 3 1 0.3 0.1 1 0.03 3 0 0.1 0.3 1 3 10 Collector to base voltage 2 Ta=75°C 300 0 0.3 Collector current IC f=1MHz IE=0 Ta=25°C 5 VCE=10V 350 25°C Cob - VCB 6 hFE - IC 400 Forward current transfer ratio hFE Ta=25°C 140 Collector to emitter saturation voltage VCE(sat) (V) 160 30 100 VCB (V) 1 0.4 0.6 0.8 1.0 1.2 Input voltage VIN (V) 1.4 0.01 0.1 0.3 1 3 10 30 Output current IO (mA) 100