XP06401 XP6401 2SB0709A 2SB709A

XP06401 (XP6401) Silicon PNP epitaxial planer transistor Unit: mm For general amplification 1 6 2 5 3 Two elements incorporated

Composite Transistors XP06401 XP06401 (XP6401 XP6401) Silicon PNP epitaxial planer transistor Unit: mm For general amplification 1 6 2 5 3 Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 4 0 to 0.1 2SB0709A 2SB0709A(2SB709A 2SB709A) × 2 elements 0.12 0.02 0.9±0.1 G 0.7±0.1 I Basic Part Number of Element +0.05 0.2 G 2.0±0.1 G 0.425 0.65 I Features 1.25±0.1 0.65 0.425 0.2±0.05 2.1±0.1 I Absolute Maximum Ratings Parameter (Ta=25°C) Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage Rating Emitter to base voltage of element Collector current VCEO 50 7 V IC 100 mA Peak collector current ICP 200 mA Total power dissipation PT 150 mW Overall Junction temperature Tj 150 °C Tstg 55 to +150 °C 4 : Collector (Tr2) 5 : Base (Tr1) 6 : Collector (Tr1) EIAJ : SC88 SMini Type Package (6pin) V VEBO 1 : Emitter (Tr1) 2 : Emitter (Tr2) 3 : Base (Tr2) 0.2±0.1 Storage temperature Marking Symbol: 5O Internal Connection 1 Parameter Collector to base voltage 6 5 2 3 I Electrical Characteristics Tr1 Tr2 4 (Ta=25°C) Symbol Conditions min typ max Unit VCBO IC = 10µA, IE = 0 60 V Collector to emitter voltage VCEO IC = 2mA, IB = 0 50 V Emitter to base voltage VEBO IE = 10µA, IC = 0 7 V Collector cutoff current ICBO VCB = 20V, IE = 0 0.1 µA ICEO VCE = 10V, IB = 0 100 µA Forward current transfer ratio VCE = 10V, IC = 2mA 160 hFE (small/large)*1 VCE = 10V, IC = 2mA 0.5 Collector to emitter saturation voltage VCE(sat) IC = 100mA, IB = 10mA Transition frequency fT VCB = 10V, IE = 1mA, f = 200MHz 80 MHz Collector output capacitance *1 hFE Forward current transfer hFE ratio 460 Cob VCB = 10V, IE = 0, f = 1MHz 2.7 pF 0.99 0.3 0.5 V Ratio between 2 elements Note.) The Part number in the Parenthesis shows conventional part number. 1 Composite Transistors XP06401 XP06401 PT - Ta IC - VCE 250 IC - I B 60 60 200 150 100 50 250µA 40 200µA 30 150µA 20 100µA 10 0 0 20 40 60 20 10 0 0 2 4 6 8 10 12 14 16 18 0 100 Collector to emitter voltage VCE (V) IB - VBE IC - VBE Collector current IC (mA) 200 150 100 25°C 160 120 80 40 50 Collector to emitter saturation voltage VCE(sat) (V) 25°C Ta=75°C 400 VCE(sat) - IC VCE=5V 200 250 300 10 VCE=5V Ta=25°C 300 200 Base current IB (µA) 240 350 IC/IB=10 3 1 25°C Ta=75°C 25°C 0.3 0.1 0.03 0.01 0.003 0 0 0.4 0.8 1.2 0 1.6 0.4 1.2 1.6 Base to emitter voltage VBE Base to emitter voltage VBE (V) hFE - IC 400 Ta=75°C 25°C 25°C 200 100 10 30 100 300 1000 140 120 100 80 60 40 Collector current IC (mA) 0 0.1 30 100 300 1000 Cob - VCB 20 3 10 8 VCB=10V Ta=25°C Transition frequency fT (MHz) 500 3 Collector current IC (mA) 160 VCE=10V 0 1 0.001 1 2.0 (V) fT - I E 600 300 0.8 Collector output capacitance Cob (pF) 0 Forward current transfer ratio hFE 30 0 80 100 120 140 160 400 2 40 50µA Ambient temperature Ta (°C) Base current IB (µA) VCE=5V Ta=25°C 50 Collector current IC (mA) 50 Collector current IC (mA) Total power dissipation PT (mW) Ta=25°C IB=300µA 0.3 1 3 10 30 Emitter current IE (mA) 100 f=1MHz IE=0 Ta=25°C 7 6 5 4 3 2 1 0 1 2 3 5 10 20 30 50 100 Collector to base voltage VCB (V) Composite Transistors XP06401 XP06401 NF - IE NF - IE 20 6 VCB=5V f=1kHz Rg=2k Ta=25°C VCB=5V Rg=50k Ta=25°C 300 200 hfe 16 4 3 2 100 14 12 Parameter h Noise figure NF (dB) Noise figure NF (dB) 5 18 h Parameter - IE f=100Hz 10 1kHz 8 50 20 10 10kHz 6 5 4 0 0.01 0.03 0.1 0.3 1 3 10 Emitter current IE (mA) hie (k) 3 2 1 hoe (µS) 30 2 0 0.1 0.2 0.3 0.5 1 2 3 5 Emitter current IE (mA) 10 1 0.1 VCE=5V f=270Hz Ta=25°C hre (×104) 0.2 0.3 0.5 1 2 3 5 10 Emitter current IE (mA) h Parameter - VCE 300 200 hfe IE=2mA f=270Hz Ta=25°C Parameter h 100 50 30 20 hoe (µS) 10 5 3 hre (×104) hie (k) 2 1 1 2 3 5 10 20 30 50 100 Collector to emitter voltage VCE (V) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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