XP05543 2SC3904 - Datasheet Archive

 

XP05543 Silicon NPN epitaxial planer transistor Unit: mm For amplification of the low frequency 1.25±0.1 2.0±0.1 2

 

Composite Transistors XP05543 XP05543 Silicon NPN epitaxial planer transistor Unit: mm For amplification of the low frequency 1.25±0.1 2.0±0.1 2 5 3 High transition frequency fT. Two elements incorporated into one package. 6 4 Absolute Maximum Ratings Parameter (Ta=25°C) Symbol Ratings Unit Collector to base voltage VCBO 15 V Rating Collector to emitter voltage of Emitter to base voltage element Collector current VCEO 10 1 : Emitter (Tr1) 2 : Base (Tr1) 3 : Base (Tr2) V VEBO 2 Total power dissipation Storage temperature °C ­55 to +150 Tstg mW 150 Tj °C Marking Symbol: EZ Internal Connection 1 3 Tr1 nt in Symbol is Tr2 6 5 4 (Ta=25°C) co Parameter Collector cutoff current +0.05 4 : Collector (Tr2) 5 : Emitter (Tr2) 6 : Collector (Tr1) EIAJ : SC­88 S­Mini Type Package (6­pin) 2 Electrical Characteristics 0.2±0.1 mA 150 PT Overall Junction temperature V 65 IC 0.12 ­0.02 2SC3904 2SC3904 × 2 elements 0 to 0.1 0.9±0.1 Basic Part Number of Element 0.7±0.1 0.2 1 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in :// g nt n ce c g pa U in tin t e fo na RL ue ue ype typ ur so a d t d e Pr od ty ni bo yp p c. u e e uc ne t l d tl ife t/s ate cy c/ st en in cl e fo st rm ag at e. io n. 0.65 Features 0.425 0.65 M Di ain sc te on na tin nc ue e/ d 0.425 0.2±0.05 2.1±0.1 Conditions ICBO min typ VCB = 10V, IE = 0 IEBO VEB = 1V, IC = 0 hFE VCE = 8V, IC = 20mA 50 120 Transition frequency fT VCE = 8V, IC = 15mA, f = 1.5GHz 7.0 Cob VCB = 10V, IE = 0, f = 1MHz Unit 1 µA 1 µA 8.0 Collector output capacitance max /D Emitter cutoff current M ai nt en an ce Forward current transfer ratio 0.6 300 GHz 1 pF | S21 VCE = 8V, IC = 15mA, f = 1.5GHz 9 dB Power gain GUM VCE = 8V, IC = 15mA, f = 1.5GHz 10 dB Noise figure NF VCE = 8V, IC = 7mA, f = 1.5GHz 2.2 Pl ea Forward transfer gain |2 7 3.0 dB 1 Composite Transistors XP05543 XP05543 PT - Ta IC - VCE 200 IC - VBE 30 120 100 80 60 40 20 200µA 15 150µA 10 100µA 5 120 50µA Ta=75°C ­25°C 60 40 20 0 40 60 80 100 120 140 160 0 0 2 ­25°C 1 3 10 30 120 25°C 80 ­25°C 40 0 0.1 100 1 3 10 30 0 3 10 6 4 2 3 1 30 100 6 Collector to base voltage VCB (V) 100 VCE=8V f=1.5GHz Ta=25°C 5 8 6 4 0 0.1 30 NF - IC VCE=8V f=1.5GHz Ta=25°C 10 10 Collector current IC (mA) 4 3 2 1 2 0.2 1.2 8 100 Noise figure NF (dB) 0.4 1.0 0 0.3 12 Power gain GUM (dB) 0.6 0.8 10 GUM - IC 0.8 0.6 VCE=8V f=1.5GHz Ta=25°C Collector current IC (mA) f=1MHz IE=0 Ta=25°C 1 0.4 fT - IC Ta=75°C 160 Cob - VCB 1.0 0.2 Base to emitter voltage VBE (V) 12 200 Collector current IC (mA) 1.2 0 12 VCE=8V Forward current transfer ratio hFE Ta=75°C 0.01 0.3 10 hFE - IC 1 0.001 0.1 8 240 IC/IB=10 25°C 6 Collector to emitter voltage VCE (V) VCE(sat) - IC 10 0.1 4 Transition frequency fT (GHz) 20 Ambient temperature Ta (°C) Collector to emitter saturation voltage VCE(sat) (V) 25°C 80 20 0 Collector output capacitance Cob (pF) 100 Collector current IC (mA) 140 0 2 VCE=8V IB=250µA 25 160 Collector current IC (mA) Total power dissipation PT (mW) Ta=25°C 180 0.3 1 3 10 30 Collector current IC (mA) 100 0 0.1 0.3 1 3 10 30 Collector current IC (mA) 100 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. 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