XN06116 XN6116 UNR1116 UN1116 - Datasheet Archive

XN06116 (XN6116) Silicon PNP epitaxial planer transistor G 3 2 0.4±0.2 5° Two elements incorporated into one package.

Composite Transistors XN06116 XN06116 (XN6116 XN6116) Silicon PNP epitaxial planer transistor G 3 2 0.4±0.2 5° Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.8+0.2 0.3 6 Features 1 (0.65) G 5 0.16+0.10 0.06 1.50+0.25 0.05 4 I Unit: mm 2.90+0.20 0.05 1.9±0.1 (0.95) (0.95) For switching/digital circuits 0.30+0.10 0.05 0.50+0.10 0.05 UNR1116 UNR1116(UN1116 UN1116) × 2 elements I Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current 0 to 0.1 G 1.1+0.2 0.1 I Basic Part Number of Element 1.1+0.3 0.1 10° 1 : Collector (Tr1) 2 : Base (Tr1) 3 : Collector (Tr2) (Ta=25°C) Symbol Ratings Unit VCBO 50 V VCEO 50 V IC 100 mA Total power dissipation PT 300 mW Overall Junction temperature Tj 150 °C Tstg 55 to +150 °C 4 : Base (Tr2) 5 : Emitter (Tr2) 6 : Emitter (Tr1) EIAJ : SC74 Mini6-G1 Package Storage temperature Marking Symbol: 6Y Internal Connection 6 Tr1 5 4 I Electrical Characteristics Parameter 1 2 Tr2 3 (Ta=25°C) Symbol Conditions min typ max Unit Collector to base voltage VCBO IC = 10µA, IE = 0 50 V Collector to emitter voltage VCEO IC = 2mA, IB = 0 50 V Collector cutoff current ICBO VCB = 50V, IE = 0 0.1 µA ICEO VCE = 50V, IB = 0 0.5 µA 0.01 mA Emitter cutoff current VEB = 6V, IC = 0 hFE VCE = 10V, IC = 5mA 160 Forward current transfer hFE ratio hFE (small/large)*1 VCE = 10V, IC = 5mA 0.5 Collector to emitter saturation voltage VCE(sat) IC = 10mA, IB = 0.3mA Output voltage high level VOH VCC = 5V, VB = 0.5V, RL = 1k Output voltage low level VOL VCC = 5V, VB = 2.5V, RL = 1k Transition frequency fT VCB = 10V, IE = 1mA, f = 200MHz Input resistance *1 IEBO Forward current transfer ratio R1 460 0.99 0.25 4.9 V 0.2 80 30% V 4.7 V MHz +30% k Ratio between 2 elements Note) The Part number in the Parenthesis shows conventional part number. 1 Composite Transistors XN06116 XN06116 PT - Ta Total power dissipation PT (mW) 500 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (°C) IC - VCE VCE(sat) - IC 100 Collector current IC (mA) Ta=25°C 0.9mA 0.8mA 120 0.7mA 0.6mA 100 0.5mA 80 0.4mA 60 0.3mA 40 0.2mA 20 0.1mA 0 0 2 4 6 8 10 12 IC/IB=10 30 10 3 1 0.3 Ta=75°C 25°C 0.1 0.03 25°C 0.01 0.1 0.3 Collector to emitter voltage VCE (V) 10 10000 30 Ta=75°C 200 25°C 25°C 100 0 1 100 3 2 30 100 300 1000 VIN - IO 100 VO=5V Ta=25°C 1000 VO= 0.2V Ta=25°C 30 10 Input voltage VIN (V) 3 10 Collector current IC (mA) 3000 Output current IO (µA) Collector output capacitance Cob (pF) 4 300 100 30 10 3 1 0.3 0.1 1 3 0 0.1 0.3 1 3 10 30 100 Collector to base voltage VCB (V) 2 3 300 IO - VIN f=1MHz IE=0 Ta=25°C 5 1 VCE= 10V Collector current IC (mA) Cob - VCB 6 hFE - IC 400 Forward current transfer ratio hFE IB=1.0mA 140 Collector to emitter saturation voltage VCE(sat) (V) 160 1 0.4 0.03 0.6 0.8 1.0 1.2 Input voltage VIN (V) 1.4 0.01 0.1 0.3 1 3 10 30 Output current IO (mA) 100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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