2002/95/EC XN06113 XN6113 SC-74 UNR2113 UN2113 SJJ00095BED - Datasheet Archive
Composite Transistors XN06113 (XN6113) Silicon PNP epitaxial planar type Unit: mm 2.90+0.20 0.05 1.9±0.1 (0.95)
This product complies with the RoHS Directive (EU 2002/95/EC 2002/95/EC). Composite Transistors XN06113 XN06113 (XN6113 XN6113) Silicon PNP epitaxial planar type Unit: mm 2.90+0.20 0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 0.06 M Di ain sc te on na tin nc ue e/ d 6 2 0.30+0.10 0.05 0.50+0.10 0.05 Basic Part Number 0.4±0.2 1 (0.65) 3 5° ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in :// g nt n ce c g pa U in tin t e fo na RL ue ue ype typ ur so a d t d e Pr od ty ni bo yp p c. u e e uc ne t l d tl ife t/s ate cy c/ st en in cl e fo st rm ag at e. io n. · Two elements incorporated into one package (Transistors with built-in resistor) · Reduction of the mounting area and assembly cost by one half 5 1.50+0.25 0.05 4 Features 2.8+0.2 0.3 For switching/digital circuits Parameter 1.1+0.2 0.1 Symbol Collector-base voltage (Emitter open) Rating Unit VCBO -50 V Storage temperature 300 mW 150 °C Tstg Junction temperature V -55 to +150 °C 4: Base (Tr2) 5: Emitter (Tr2) 6: Emitter (Tr1) Mini6-G1 Package mA Tj Total power dissipation -50 -100 PT Collector current VCEO IC Collector-emitter voltage (Base open) 1: Collector (Tr1) 2: Base (Tr1) 3: Collector (Tr2) EIAJ: SC-74 SC-74 0 to 0.1 Absolute Maximum Ratings Ta = 25°C 1.1+0.3 0.1 10° · UNR2113 UNR2113 (UN2113 UN2113) × 2 Marking Symbol: 6W Internal Connection 4 5 6 Tr1 Tr2 3 Electrical Characteristics Ta = 25°C ± 3°C Symbol nt in Parameter co Collector-emitter voltage (Base open) /D is Collector-base cutoff current (Emitter open) ce Collector-emitter cutoff current (Base open) M ai nt en an Emitter-base cutoff current (Collector open) Forward current transfer ratio hFE Ratio * Collector-emitter saturation voltage Output voltage high-level Output voltage low-level Conditions Min Typ 1 Max Unit VCBO IC = -10 µA, IE = 0 -50 VCEO IC = -2 mA, IB = 0 -50 ICBO VCB = -50 V, IE = 0 - 0.1 ICEO VCE = -50 V, IB = 0 - 0.5 µA IEBO VEB = -6 V, IC = 0 - 0.1 mA hFE VCE = -10 V, IC = -5 mA 80 hFE(Small VCE = -10 V, IC = -5 mA 0.50 V V µA 0.99 /Large) VCE(sat) IC = -10 mA, IB = - 0.3 mA Pl ea Collector-base voltage (Emitter open) 2 VOH VCC = -5 V, VB = - 0.5 V, RL = 1 k VOL - 0.25 - 0.2 VCC = -5 V, VB = -3.5 V, RL = 1 k V V -4.9 V Input resistance R1 -30% 47 +30% k Resistance ratio R1 / R 2 0.8 1.0 1.2 Transition frequency fT VCB = -10 V, IE = 1 mA, f = 200 MHz 80 MHz Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Ratio between 2 elements Note) The part number in the parenthesis shows conventional part number. Publication date: February 2004 SJJ00095BED SJJ00095BED 1 This product complies with the RoHS Directive (EU 2002/95/EC 2002/95/EC). XN06113 XN06113 IC VCE VCE(sat) IC -160 400 300 200 Ta = 25°C - 0.9 mA - 0.8 mA - 0.7 mA -120 Collector current IC (mA) Total power dissipation PT (mW) IB = -1.0 mA - 0.6 mA - 0.5 mA - 0.4 mA -80 - 0.3 mA - 0.2 mA -40 100 - 0.1 mA 0 0 0 40 80 120 160 -2 0 Ta = 75°C 300 25°C 200 -25°C 100 -100 -1 000 6 5 3 2 Input voltage VIN (V) -25°C -1 0 - 0.1 -1 -10 -10 -1 - 0.1 -10 -10 -100 Collector current IC (mA) -104 VO = -5 V Ta = 25°C -103 -102 -10 1 -100 Output current IO (mA) 2 - 0.1 IO VIN 4 VO = - 0.2 V Ta = 25°C -1 Ta = 75°C 25°C - 0.01 - 0.1 f = 1 MHz IE = 0 Ta = 25°C VIN IO - 0.01 - 0.1 -12 -100 Collector-base voltage VCB (V) Collector current IC (mA) -100 -10 Output current IO (µA) VCE = -10 V Forward current transfer ratio hFE -8 -1 Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob hFE IC 400 -10 -6 IC / IB = 10 -10 Collector-emitter voltage VCE (V) Ambient temperature Ta (°C) 0 -1 -4 -100 Collector-emitter saturation voltage VCE(sat) (V) PT Ta 500 SJJ00095BED SJJ00095BED -1 - 0.4 - 0.6 - 0.8 -1.0 -1.2 Input voltage VIN (V) -1.4 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. 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