2002/95/EC XN04381G UNR2213 UNR2122 SJJ00480AED

Composite Transistors XN04381G Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) M Di ain sc te on

This product complies with the RoHS Directive (EU 2002/95/EC 2002/95/EC). Composite Transistors XN04381G XN04381G Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) M Di ain sc te on na tin nc ue e/ d For switching circuits/digital circuits ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in :// g nt n ce c g pa U in tin t e fo na RL ue ue ype typ ur so a d t d e Pr od ty ni bo yp p c. u e e uc ne t l d tl ife t/s ate cy c/ st en in cl e fo st rm ag at e. io n. Package Features · Two elements incorporated into one package (Transistors with built-in resistor) · Reduction of the mounting area and assembly cost by one half 1: Collector (Tr1) 2: Base (Tr2) 3: Emitter (Tr2) Basic Part Number · UNR2213 UNR2213 + UNR2122 UNR2122 Absolute Maximum Ratings Ta = 25°C Parameter Tr1 Symbol Collector current Overall Total power dissipation Junction temperature V VCEO 50 V 100 -50 V VCEO -50 V -500 mA PT 300 mW 150 °C -55 to +150 Marking Symbol: CW mA VCBO 4: Collector (Tr2) 5: Base (Tr1) 6: Emitter (Tr1) °C Internal Connection (C2) 4 (B1) 5 (E1) 6 R2 47 k R1 47 k Tr2 R2 4.7 k 3 (E2) Tr1 R1 4.7 k 2 (B2) 1 (C1) Publication date: March 2009 Pl ea M ai nt en an ce /D is co nt in Storage temperature 50 Tj Collector-emitter voltage (Base open) VCBO Tstg Collector-base voltage (Emitter open) Unit IC Collector current Rating IC Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Tr2 · Code Mini6-G3 · Pin Name SJJ00480AED SJJ00480AED 1 This product complies with the RoHS Directive (EU 2002/95/EC 2002/95/EC). XN04381G XN04381G Electrical Characteristics Ta = 25°C ± 3°C · Tr1 Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 50 Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0 Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0 0.5 µA Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0 0.1 mA hFE VCE = 10 V, IC = 5 mA Forward current transfer ratio Collector-emitter saturation voltage VCE(sat) Conditions Min Typ VOH VCC = 5 V, VB = 0.5 V, RL = 1 k Output voltage low-level VOL Unit V V 0.1 µA 80 IC = 10 mA, IB = 0.3 mA Output voltage high-level Max 0.25 VCC = 5 V, VB = 3.5 V, RL = 1 k 4.9 V V 0.2 V Input resistance R1 -30% 47 +30% k Resistance ratio R1 / R2 0.8 1.0 1.2 Transition frequency fT VCB = 10 V, IE = -2 mA, f = 200 MHz 150 MHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. · Tr2 Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = -10 µA, IE = 0 -50 Collector-emitter voltage (Base open) VCEO IC = -2 mA, IB = 0 -50 Collector-base cutoff current (Emitter open) ICBO VCB = -50 V, IE = 0 -1 Collector-emitter cutoff current (Base open) ICEO VCE = -50 V, IB = 0 -1 µA Emitter-base cutoff current (Collector open) IEBO VEB = -6 V, IC = 0 -2 mA hFE VCE = -10 V, IC = -100 mA VCE(sat) IC = -100 mA, IB = -5 mA Forward current transfer ratio Collector-emitter saturation voltage Conditions Output voltage high-level VOH VCC = -5 V, VB = - 0.5 V, RL = 500 Output voltage low-level VOL Min Typ Max Unit V V µA 50 - 0.25 - 0.2 VCC = -5 V, VB = -3.5 V, RL = 500 V V -4.9 V Input resistance R1 -30% 4.7 +30% k Resistance ratio R1 / R2 0.8 1.0 1.2 Transition frequency fT VCB = -10 V, IE = 50 mA, f = 200 MHz 200 MHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Common characteristics chart PT Ta Total power dissipation PT (mW) 500 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (°C) 2 SJJ00480AED SJJ00480AED This product complies with the RoHS Directive (EU 2002/95/EC 2002/95/EC). XN04381G XN04381G Characteristics charts of Tr1 VCE(sat) IC Collector current IC (mA) 0.9 mA 0.8 mA 0.7 mA 0.6 mA 120 0.5 mA 0.4 mA 80 0.3 mA 0.2 mA 40 0.1 mA 0 0 2 4 6 8 10 12 100 IC / IB = 10 1 -25°C 25°C 1 10 -25°C 200 100 0 0.01 0.1 Ta = 75°C 300 100 1 IO VIN 104 4 3 2 100 1 000 VIN IO 100 VO = 5 V Ta = 25°C 103 Input voltage VIN (V) f = 1 MHz IE = 0 Ta = 25°C 10 Collector current IC (mA) Collector current IC (mA) Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob Ta = 75°C 25°C 0.1 Cob VCB 5 VCE = 10 V 10 Collector-emitter voltage VCE (V) 6 hFE IC 400 Forward current transfer ratio hFE Ta = 25°C IB = 1.0 mA Collector-emitter saturation voltage VCE(sat) (V) IC VCE 160 102 VO = 0.2 V Ta = 25°C 10 1 0.1 10 1 0 0.1 1 10 Collector-base voltage VCB (V) 100 1 0.4 0.6 0.8 1.0 1.2 Input voltage VIN (V) SJJ00480AED SJJ00480AED 1.4 0.01 0.1 1 10 100 Output current IO (mA) 3 This product complies with the RoHS Directive (EU 2002/95/EC 2002/95/EC). XN04381G XN04381G Characteristics charts of Tr2 IC VCE VCE(sat) IC -100 Collector current IC (mA) -250 IB = -1.0 mA - 0.9 mA -200 - 0.8 mA - 0.7 mA -150 - 0.6 mA - 0.5 mA - 0.4 mA - 0.3 mA -100 - 0.2 mA -50 - 0.1 mA 0 -2 0 -4 -6 -8 -10 -12 IC / IB = 10 -10 -1 Ta = 75°C 25°C - 0.1 -25°C - 0.01 -1 Collector-emitter voltage VCE (V) -10 25°C 80 -25°C 40 0 -1 -1 000 12 8 -10 -100 -1 000 Collector current IC (mA) VIN IO VO = -5 V Ta = 25°C -103 -100 Input voltage VIN (V) Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob 16 -102 -10 VO = - 0.2 V Ta = 25°C -10 -1 - 0.1 4 0 - 0.1 -1 -10 -100 Collector-base voltage VCB (V) 4 120 IO VIN -104 f = 1 MHz IE = 0 Ta = 25°C 20 -100 Ta = 75°C VCE = -10 V Collector current IC (mA) Cob VCB 24 hFE IC 160 Forward current transfer ratio hFE Ta = 25°C Collector-emitter saturation voltage VCE(sat) (V) -300 -1 - 0.4 - 0.6 - 0.8 -1.0 -1.2 Input voltage VIN (V) SJJ00480AED SJJ00480AED -1.4 - 0.01 - 0.1 -1 -10 Output current IO (mA) -100 This product complies with the RoHS Directive (EU 2002/95/EC 2002/95/EC). XN04381G XN04381G Mini6-G3 Unit: mm +0.20 2.90 -0.05 +0.05 1.9 ±0.1 (0.95) 0.13 -0.02 (0.95) 2 1 6° 1.50 -0.05 (0.65) +0.10 0.30 -0.05 0.4 ±0.2 3 +0.2 6 2.8 -0.3 5 +0.25 4 +0.10 0.50 -0.05 +0.3 1.1 -0.1 0 to 0.1 1.1 -0.1 +0.2 8° SJJ00480AED SJJ00480AED 5 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. Any applications other than the standard applications intended. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company. 20080805