2002/95/EC XN04214 XN4214 SC-74 UNR2214 UN2214 SJJ00055BED - Datasheet Archive
This product complies with the RoHS Directive (EU 2002/95/EC 2002/95/EC). Composite Transistors XN04214 XN04214 (XN4214 XN4214) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 0.05 1.9±0.1 (0.95) (0.95) M Di ain sc te on na tin nc ue e/ d 6 2 0.30+0.10 0.05 0.50+0.10 0.05 Basic Part Number 0.4±0.2 1 (0.65) 3 5° ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in :// g nt n ce c g pa U in tin t e fo na RL ue ue ype typ ur so a d t d e Pr od ty ni bo yp p c. u e e uc ne t l d tl ife t/s ate cy c/ st en in cl e fo st rm ag at e. io n. · Two elements incorporated into one package (Transistors with built-in resistor) · Reduction of the mounting area and assembly cost by one half 5 1.50+0.25 0.05 4 Features 2.8+0.2 0.3 For switching/digital circuits 0.16+0.10 0.06 Parameter 1.1+0.2 0.1 Symbol Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Rating Unit VCBO 50 V 300 mW 150 °C Tstg Storage temperature V -55 to +150 °C 4: Collector (Tr2) 5: Base (Tr1) 6: Emitter (Tr1) Mini6-G1 Package mA Tj Junction temperature 50 100 PT Total power dissipation VCEO IC Collector current 1: Collector (Tr1) 2: Base (Tr2) 3: Emitter (Tr2) EIAJ : SC-74 SC-74 0 to 0.1 Absolute Maximum Ratings Ta = 25°C 1.1+0.3 0.1 10° · UNR2214 UNR2214 (UN2214 UN2214) × 2 Marking Symbol: BR Internal Connection 4 5 6 Tr2 3 Electrical Characteristics Ta = 25°C ± 3°C Symbol nt in Parameter Collector-base voltage (Emitter open) co Collector-emitter voltage (Base open) /D is Collector-base cutoff current (Emitter open) ce Collector-emitter cutoff current (Base open) M ai nt en an Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Output voltage high-level Min Typ 1 Max Unit VCBO IC = 10 µA, IE = 0 50 VCEO IC = 2 mA, IB = 0 50 ICBO VCB = 50 V, IE = 0 ICEO VCE = 50 V, IB = 0 0.5 µA IEBO VEB = 6 V, IC = 0 0.2 mA hFE VCE = 10 V, IC = 5 mA VCE(sat) VCC = 5 V, VB = 0.5 V, RL = 1 k VOL V 0.1 µA 80 IC = 10 mA, IB = 0.3 mA VOH V 0.25 VCC = 5 V, VB = 2.5 V, RL = 1 k 4.9 V V 0.2 V Input resistance Pl ea Output voltage low-level Conditions 2 Tr1 R1 -30% 10 +30% k Resistance ratio R1 / R 2 0.17 0.21 0.25 Transition frequency fT VCB = 10 V, IE = -2 mA, f = 200 MHz 150 MHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Note) The part number in the parenthesis shows conventional part number. Publication date: March 2004 SJJ00055BED SJJ00055BED 1 This product complies with the RoHS Directive (EU 2002/95/EC 2002/95/EC). XN04214 XN04214 IC VCE VCE(sat) IC 160 IB = 1.0 mA 400 Collector current IC (mA) Total power dissipation PT (mW) Ta = 25°C 300 200 120 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA 80 0.3 mA 40 0.2 mA 100 0.1 mA 0 40 80 120 0 160 Ambient temperature Ta (°C) 0 Forward current transfer ratio hFE VCE = 10 V 300 Ta = 75°C 200 25°C -25°C 100 10 6 8 100 1 000 Collector current IC (mA) 6 5 3 2 0 0.1 1 10 Collector-base voltage VCB (V) Input voltage VIN (V) 1 0.1 10 100 Output current IO (mA) 2 1 Ta = 75°C 25°C 0.1 -25°C 0.01 0.1 1 10 100 Collector current IC (mA) 104 VO = 5 V Ta = 25°C 103 102 10 1 VO = 0.2 V Ta = 25°C 1 10 IO VIN 4 10 0.01 0.1 12 f = 1 MHz IE = 0 Ta = 25°C VIN IO 100 10 IC / IB = 10 Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob hFE IC 1 4 100 Collector-emitter voltage VCE (V) 400 0 2 Output current IO (µA) 0 Collector-emitter saturation voltage VCE(sat) (V) PT Ta 500 SJJ00055BED SJJ00055BED 100 1 0.4 0.6 0.8 1.0 1.2 Input voltage VIN (V) 1.4 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. Any applications other than the standard applications intended. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.