NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
2002/95/EC XN04114 XN4114 SC-74 UNR2114 UN2114 SJJ00047BED - Datasheet Archive
Composite Transistors XN04114 (XN4114) Silicon PNP epitaxial planar type Unit: mm 2.90+0.20 0.05 1.9±0.1 (0.95)
This product complies with the RoHS Directive (EU 2002/95/EC 2002/95/EC). Composite Transistors XN04114 XN04114 (XN4114 XN4114) Silicon PNP epitaxial planar type Unit: mm 2.90+0.20 0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 0.06 M Di ain sc te on na tin nc ue e/ d 2 5° 1 (0.65) 3 0.30+0.10 0.05 0.50+0.10 0.05 Basic Part Number 0.4±0.2 6 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in :// g nt n ce c g pa U in tin t e fo na RL ue ue ype typ ur so a d t d e Pr od ty ni bo yp p c. u e e uc ne t l d tl ife t/s ate cy c/ st en in cl e fo st rm ag at e. io n. · Two elements incorporated into one package (Transistors with built-in resistor) · Reduction of the mounting area and assembly cost by one half 5 1.50+0.25 0.05 4 Features 2.8+0.2 0.3 For switching/digital circuits Parameter 1.1+0.2 0.1 Symbol Collector-base voltage (Emitter open) Rating Unit VCBO -50 V Storage temperature 300 mW 150 °C Tstg Junction temperature V -55 to +150 °C 4: Collector (Tr2) 5: Base (Tr1) 6: Emitter (Tr1) Mini6-G1 Package mA Tj Total power dissipation -50 -100 PT Collector current VCEO IC Collector-emitter voltage (Base open) 1: Collector (Tr1) 2: Base (Tr2) 3: Emitter (Tr2) EIAJ : SC-74 SC-74 0 to 0.1 Absolute Maximum Ratings Ta = 25°C 1.1+0.3 0.1 10° · UNR2114 UNR2114 (UN2114 UN2114) × 2 Marking Symbol: BK Internal Connection 4 5 6 Tr2 3 Electrical Characteristics Ta = 25°C ± 3°C Symbol nt in Parameter Collector-base voltage (Emitter open) co Collector-emitter voltage (Base open) /D is Collector-base cutoff current (Emitter open) ce Collector-emitter cutoff current (Base open) M ai nt en an Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Output voltage high-level Min Typ 1 Max Unit VCBO IC = -10 µA, IE = 0 -50 VCEO IC = -2 mA, IB = 0 -50 ICBO VCB = -50 V, IE = 0 - 0.1 ICEO VCE = -50 V, IB = 0 - 0.5 µA IEBO VEB = -6 V, IC = 0 - 0.2 mA hFE VCE = -10 V, IC = -5 mA VCE(sat) VCC = -5 V, VB = - 0.5 V, RL = 1 k VOL V µA 80 IC = -10 mA, IB = - 0.3 mA VOH V - 0.25 - 0.2 VCC = -5 V, VB = -2.5 V, RL = 1 k V V -4.9 V Input resistance Pl ea Output voltage low-level Conditions 2 Tr1 R1 -30% 10 +30% k Resistance ratio R1 / R 2 0.17 0.21 0.25 Transition frequency fT VCB = -10 V, IE = 1 mA, f = 200 MHz 80 MHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Note) The part number in the parenthesis shows conventional part number. Publication date: February 2004 SJJ00047BED SJJ00047BED 1 This product complies with the RoHS Directive (EU 2002/95/EC 2002/95/EC). XN04114 XN04114 PT Ta IC VCE VCE(sat) IC IB = -1.0 mA -120 300 200 - 0.5 mA -80 - 0.4 mA - 0.3 mA - 0.2 mA -40 100 0 - 0.1 mA 0 40 80 120 0 160 Ambient temperature Ta (°C) -2 0 -8 300 Ta = 75°C 200 25°C -25°C 100 -100 -1 000 Collector current IC (mA) 6 5 3 2 0 - 0.1 -1 -10 Input voltage VIN (V) -10 -1 -10 -100 Collector-base voltage VCB (V) -100 Output current IO (mA) 2 -1 -10 -100 Collector current IC (mA) -104 VO = -5 V Ta = 25°C -103 -102 -10 1 VO = - 0.2 V Ta = 25°C -1 -25°C - 0.01 - 0.1 IO VIN 4 -100 - 0.1 - 0.1 -12 25°C - 0.1 f = 1 MHz IE = 0 Ta = 25°C VIN IO -1 000 -10 Ta = 75°C Output current IO (µA) VCE = -10 V -10 -6 -1 Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob hFE IC 0 -1 -4 IC / IB = 10 -10 Collector-emitter voltage VCE (V) 400 Forward current transfer ratio hFE - 0.9 mA - 0.8 mA - 0.7 mA - 0.6 mA 400 Collector current IC (mA) Total power dissipation PT (mW) Ta = 25°C Collector-emitter saturation voltage VCE(sat) (V) -100 -160 500 SJJ00047BED SJJ00047BED -1 - 0.4 - 0.6 - 0.8 -1.0 -1.2 Input voltage VIN (V) -1.4 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. Any applications other than the standard applications intended. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.