XN01871 XN1871 2SK0198 2SK198 SC-74A SJJ00034BED - Datasheet Archive
XN01871 (XN1871) Silicon n-channel junction FET Unit: mm 2.90+0.20 0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 0.06 M
Composite Transistors XN01871 XN01871 (XN1871 XN1871) Silicon n-channel junction FET Unit: mm 2.90+0.20 0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 0.06 M Di ain sc te on na tin nc ue e/ d 5 1 0.30+0.10 0.05 (0.65) 2 5° ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in :// g nt n ce c g pa U in tin t e fo na RL ue ue ype typ ur so a d t d e Pr od ty ni bo yp p c. u e e uc ne t l d tl ife t/s ate cy c/ st en in cl e fo st rm ag at e. io n. · Two elements incorporated into one package (Source-coupled FETs) · Reduction of the mounting area and assembly cost by one half Basic Part Number 4 1.50+0.25 0.05 3 1.1+0.2 0.1 Parameter Symbol Storage temperature V 20 mA 10 mA 300 mW 150 °C Tstg Channel temperature -30 Tch Total power dissipation VGDO PT Gate current V IG Drain curennt Unit 30 ID Gate-drain voltage (Source open) Rating VDSX Drain-source voltage -55 to +150 °C 0 to 0.1 Absolute Maximum Ratings Ta = 25°C 1.1+0.3 0.1 10° · 2SK0198 2SK0198 (2SK198 2SK198) × 2 1: Gate (FET1) 2: Gate (FET2) 3: Drain (FET2) EIAJ: SC-74A SC-74A 4: Source 5: Drain (FET1) Mini5-G1 Package Marking Symbol: 5T Internal Connection 3 4 5 FET2 Symbol nt in Parameter M ai nt en an ce Mutual conductance /D is Gate-source cutoff voltage co Gate-source cutoff current Conditions IDSS VDS = 10 V, VGS = 0 IGSS VDS = 10 V, ID = 10 µA 1 Min Typ VGS = -30 V, VDS = 0 VGSC FET1 2 Electrical Characteristics Ta = 25°C ± 3°C Drain-source cutoff current 0.4±0.2 Features 2.8+0.2 0.3 For low-frequency amplification 0.5 - 0.1 VDS = 10 V, ID = 0.5 mA, f = 1 MHz 4 VDS = 10 V, VGS = 0, f = 1 kHz gm 4 Max Unit 12 mA -100 nA -1.5 V mS 12 Ciss VDS = 10 V, VGS = 0, f = 1 MHz 14 pF Reverse transfer capacitance (Common source) Crss VDS = 10 V, VGS = 0, f = 1 MHz 3.5 pF 60 mV Noise voltage Pl ea Short-circuit forward transfer capacitance (Common source) NV VDS = 30 V, ID = 1 mA, GV = 80 dB Rg = 100 k, Function = FLAT Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Note) The part number in the parenthesis shows conventional part number. Publication date: February 2004 SJJ00034BED SJJ00034BED 1 XN01871 XN01871 PT Ta ID VDS 500 ID VGS 9.6 8 VDS = 10 V 8.0 300 200 6 VGS = 0 V 4 - 0.1 V - 0.2 V Drain current ID (mA) 400 Drain current ID (mA) Total power dissipation PT (W) Ta = 25°C 6.4 4.8 Ta = 75°C 3.2 25°C 2 100 - 0.3 V 25°C 1.6 - 0.4 V 0 40 80 120 0 160 0 Ambient temperature Ta (°C) 2 4 Mutual conductance gm (mS) Mutual conductance gm (mS) 16 IDSS = 5.0 mA 8 2.0 mA 4 0 - 0.8 - 0.6 - 0.4 - 0.2 12 2.0 mA 8 4 2 4 6 8 NF f 12 VGS = 3 V f = 1 MHz Ta = 25°C VDS = 10 V ID = 5.2 mA Ta = 25°C 10 Noise figure NF (dB) 4 3 2 1 8 6 4 Rg = 500 2 1 k 1 10 Drain-source voltage VDS (V) 2 100 0 10 102 103 104 Frequency f (Hz) SJJ00034BED SJJ00034BED - 0.4 - 0.2 0 10 VGS = 3 V f = 1 MHz Ta = 25°C 8 6 Ciss 4 Coss 2 0 1 10 Drain-source voltage VDS (V) Drain current ID (mA) Crss VDS - 0.6 Ciss , Coss VDS IDSS = 5.0 mA 0 - 0.8 Gate-source voltage VGS (V) 16 0 0 5 0 0 -1.0 12 VDS = 10 V Ta = 25°C Gate-source voltage VGS (V) Reverse transfer capacitance C (pF) rss (Common source) 10 gm ID 20 VDS = 10 V Ta = 25°C 12 8 Drain-source voltage VDS (V) gm VGS 20 6 Short-circuit forward transfer capacitance (Common source) Ciss , Short-circuit output capacitance (Common source) Coss (pF) 0 105 100 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. 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