XD010-14S-D4F EDS-102936 JESD22-A114-B AN-060 AN060 XD010-EVAL

Product Description Sirenza Microdevices' XD010-14S-D4F 15W power module is a robust 2stage Class A/AB amplifier module for use

XD010-14S-D4F XD010-14S-D4F Product Description Sirenza Microdevices' XD010-14S-D4F XD010-14S-D4F 15W power module is a robust 2stage Class A/AB amplifier module for use in GSM and EDGE RF applications. This module is optimized to minimize the EVM at typical operating levels. The power transistors are fabricated using Sirenza's latest, high performance LDMOS process. This unit operates from a single voltage supply and has internal temperature compensation of the bias voltage to ensure stable performance over the full temperature range. It is a drop-in, no-tune solution for medium power applications requiring high efficiency, excellent linearity, and unit-to-unit repeatability. It is internally matched to 50 ohms. Product Features Functional Block Diagram Stage 1 Bias Network 1 925-960 MHz Class A/AB 15W Power Amplifier Module · · · · · · · · Stage 2 Temperature Compensation 2 50 W RF impedance 15W Output P1dB Single Supply Operation : Nominally 28V High Gain: 32 dB at 942 MHz High Efficiency: 31% at 942 MHz Robust 8000V ESD (HBM), Class 3B High Peak Power for Lower BER Ultra-low EVM 4 3 Applications RF in VD1 VD2 RF out Case Flange = Ground · · · Base Station PA driver Repeater GSM / EDGE Key Specifications Symbol Frequency Parameter Unit Min. Frequency of Operation MHz 925 P1dB Output Power at 1dB Compression (single tone) W 10 Gain Gain at 12W Output Power (CW) dB 30 Peak-to-Peak Gain Variation dB IRL Input Return Loss 12W CW dB 12 Efficiency Drain Efficiency at 12W CW % 27 RMS EVM at 8W EDGE output % Gain Flatness Linearity Phase Linearity Max. 960 15 32 35 0.4 1.0 18 31 2.5 % 6.7 3rd Order IMD at 12W PEP (Two Tone) Delay Peak EVM at 8W EDGE output Typ. dBc -35 Signal Delay from Pin 1 to Pin 4 nS 2.5 Deviation from Linear Phase (Peak-to-Peak) Deg 0.5 RTH, j-l Thermal Resistance Stage 1 (Junction-to-Case) ºC/W 11 RTH, j-2 Thermal Resistance Stage 2 (Junction-to-Case) ºC/W -30 4 Test Conditions Zin = Zout = 50, VDD = 28.0V, IDQ1 = 230 mA, IDQ2 =158 mA, TFlange = 25ºC 1625-1675The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any thrid party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2003 Sirenza Microdevices, Inc. All worldwide rights reserved. 303 S. Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-102936 EDS-102936 Rev E XD010-14S-D4F XD010-14S-D4F 925-960 MHz 15W Power Amp Module Quality Specifications Parameter Unit ESD Rating 85o MTTF o C Leadframe, 200 C Channel Typical V 8000 Hours Human Body Model, JEDEC Document - JESD22-A114-B JESD22-A114-B 1.2 X 106 Pin Description Pin # Function Description 1 RF Input Module RF input. This pin is internally connected to DC ground. Do not apply DC voltages to the RF leads. Care must be taken to protect against video transients that may damage the active devices. 2 VD1 This is the drain voltage for the first stage. Nominally +28Vdc 3 VD2 This is the drain voltage for the 2nd stage of the amplifier module. The 2nd stage gate bias is temperature compensated to maintain constant quiscent drain current over the operating temperature range. See Note 1. 4 RF Output Module RF output. This pin is internally connected to DC ground. Do not apply DC voltages to the RF leads. Care must be taken to protect against video transients that may damage the active devices. Flange Gnd Exposed area on the bottom side of the package needs to be mechanically attached to the ground plane of the board for optimum thermal and RF performance. See mounting instructions in application note AN-060 AN-060 on Sirenza's web site. Simplified Device Schematic 2 VD1 3 VD2 Temperature Bias Network RFout Q2 Q1 RFin 1 Compensation 4 Case Flange = Ground Absolute Maximum Ratings Parameters Value Unit 1st Stage Bias Voltage (VD1 ) 35 V 2nd Stage Bias Voltage (VD2) 35 V RF Input Power +20 dBm Load Impedance for Continuous Operation Without Damage 5:1 VSWR Output Device Channel Temperature +200 ºC Operating Temperature Range -20 to +90 ºC Storage Temperature Range -40 to +100 ºC Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation see typical setup values specified in the table on page one. Caution: ESD Sensitive Appropriate precaution in handling, packaging and testing devices must be observed. 303 S. Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC 2 Note 1: The internally generated gate voltage is thermally compensated to maintain constant quiescent current over the temperature range listed in the data sheet. No compensation is provided for gain changes with temperature. This can only be accomplished with AGC external to the module. Note 2: Internal RF decoupling is included on all bias leads. No additional bypass elements are required, however some applications may require energy storage on the drain leads to accommodate time-varying waveforms. Note 3: This module was designed to have its leads hand soldered to an adjacent PCB. The maximum soldering iron tip temperature should not exceed 700° C, and the soldering iron tip should not be in direct contact with the lead for longer than 10 seconds. Refer to app note AN060 AN060 (www.sirenza.com) for further installation instructions. http://www.sirenza.com EDS-102936 EDS-102936 Rev E XD010-14S-D4F XD010-14S-D4F 925-960 MHz 15W Power Amp Module Typical Performance Curves Gain and Efficiency vs. Output Power and Temperature Freq=950 MHz EDGE, Vdd=28 V Gain and EVM vs. Output Power and Voltage Freq=942 MHz EDGE, Vdd=24V, 28V, 32V TFlange= 25°C 35 25 Gain (dB), Efficiency (%) 40 30 Gain @ 24 VDC Gain @ 28 VDC 20 Gain @ 32 VDC EVM @ 24 VDC 15 EVM @ 28 VDC EVM @ 32 VDC 10 5 30 25 20 Gain @ -20°C Gain @25°C Gain @ 90°C Efficiency @ -20°C Efficiency @ 25°C Efficiency @ 90°C 15 10 5 0 0 0 2 4 6 8 10 12 0 2 4 6 8 10 Output Power (W) Gain, Efficiency, EVM vs. Frequency Output Power= 8 W EDGE, Vdd=28 V TFlange=25°C EVM and Id vs. Output Power and Temperature Freq=950 MHz EDGE, Vdd=28 V 0 -5 Efficiency 20 -15 EVM 15 -20 Input Return Loss 10 -25 5 920 930 940 950 960 -35 970 1.2 1 3 0.8 2 0.6 1 0.4 0.2 0 0 2 4 6 8 10 12 Output Power (W) Frequency (MHz) 303 S. Technology Court Broomfield, CO 80021 1.4 EVM @ 25°C Id @ -20°C Id @ 90°C 4 -30 0 EVM @-20°C EVM @ 90°C Id @ 25°C 5 EVM (%) -10 Gain 6 Input Return Loss (dB) 30 Gain (dB), Efficiency (%), EVM (%) 35 25 12 Output Power (W) Phone: (800) SMI-MMIC 3 http://www.sirenza.com EDS-102936 EDS-102936 Rev E Id (Amps) Gain (dB), EVM (%) 35 XD010-14S-D4F XD010-14S-D4F 925-960 MHz 15W Power Amp Module Test Board Schematic with module connections shown Test Board Bill of Materials Component Description Manufacturer PCB Rogers 4350, er=3.5 Thickness=30mils Rogers J1, J2 SMA, RF, Panel Mount Tab W / Flange Johnson J3 MTA Post Header, 6 Pin, Rectangle, Polarized, Surface Mount AMP C1, C10 Cap, 10mF, 35V, 10%, Tant, Elect, D Kemet C2, C20 Cap, 0.1mF, 100V, 10%, 1206 Johanson C3, C30 Cap, 1000pF, 100V, 10%, 1206 Johanson C25, C26 Cap, 68pF, 250V, 5%, 0603 ATC C21, C22 Cap, 0.1mF, 100V, 10%, 0805 Panasonic C23, C24 Cap, 1000pF, 100V, 10%, 0603 AVX Mounting Screws 4-40 X 0.250" Various Test Board Layout To receive Gerber files, DXF drawings, a detailed BOM, and assembly recommendations for the test board with fixture, contact applications support at support@sirenza.com. Data sheet for evaluation circuit (XD010-EVAL XD010-EVAL) available from Sirenza website. 303 S. Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC 4 http://www.sirenza.com EDS-102936 EDS-102936 Rev E XD010-14S-D4F XD010-14S-D4F 925-960 MHz 15W Power Amp Module Package Outline Drawing Recommended PCB Cutout and Landing Pads for the D4F Package Note 3: Dimensions are in inches Refer to Application note AN-060 AN-060 "Installation Instructions for XD Module Series" for additional mounting info. App note availbale at at www.sirenza.com 303 S. Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC 5 http://www.sirenza.com EDS-102936 EDS-102936 Rev E