WPS256K16-XLJX I/O16 I/O15 I/O14 I/O13 I/O12 I/O11 I/O10 I/O9-16 A0-17 I/O1-16 - Datasheet Archive

 

256Kx16 SRAM PRELIMINARY * PLASTIC PLUSTM FEATURES s Access Times of 17 (Commercial Only), 20, 25nS s Standard Commercial

 

WPS256K16-XLJX WPS256K16-XLJX 256Kx16 SRAM PRELIMINARY * PLASTIC PLUSTM FEATURES s Access Times of 17 (Commercial Only), 20, 25nS s Standard Commercial Off-The-Shelf (COTS) Memory Devices for Extended Temperature Range s Industry Standard 44 Lead Plastic SOJ Package s Electrical and Speed Characteristics for: PIN CONFIGURATION TOP VIEW 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A17 A16 A15 OE UB LB I/O16 I/O16 I/O15 I/O15 I/O14 I/O14 I/O13 I/O13 VSS VCC I/O12 I/O12 I/O11 I/O11 I/O10 I/O10 I/O9 NC A14 A13 A12 A11 A10 · Military Temperature (-55°C to +125°C) · Industrial Temperature (-40°C to +85°C) · Commercial Temperature (0°C to +70°C) s Burn-in and Temperature Cycling Available s Organized as 256K x 16 s Center Power/Ground Pins (Revolutionary) s Data Byte Control: · Lower Byte (LB) = I/O1-8 · Upper Byte (UB) = I/O9-16 I/O9-16 s 5 Volt Power Supply s s s s s PIN DESCRIPTION A0-17 A0-17 LB Lower-Byte Control (I/O1-8) Upper-Byte Control (I/O 9-16) I/O1-16 I/O1-16 Data Input/Output CS Chip Select OE Output Enable WE Write Enable VCC +5.0V Power VSS · Thermal Shock · Temperature Cycling * This data sheet describes a product under development, not fully characterized, and is subject to change without notice. Ground NC April 1996 I/O Compatible with 3.3V Devices Low Power Dissipation CMOS TTL Compatible Inputs and Outputs Battery Back-Up Operation Reliability Test Data Available: · High Temperature Operating Life · High Temperature Storage · Pressure Cooker Test · Wet High Temperature Operating Life Address Inputs UB 13 No Connection 1 White Microelectronics · Phoenix, AZ · (602) 437-1520 SRAM SRAM A0 A1 A2 A3 A4 CS I/O1 I/O2 I/O3 I/O4 VCC VSS I/O5 I/O6 I/O7 I/O8 WE A5 A6 A7 A8 A9 WPS256K16-XLJX WPS256K16-XLJX TRUTH TABLE CS WE OE H L L X H X L H L L 13 X H X L LB X UB X X H L H L L H L Mode Data I/O Not Select Standby Output Disable X X H H L L H L L I/O9-16 I/O9-16 High Z High Z High Z Active Data Out High Z Data Out Data In High Z Data In High Z Data Out Data Out High Z Data In Data In Read Write ABSOLUTE MAXIMUM RATINGS Parameter Power I/O1-8 High Z Active Active RECOMMENDED OPERATING CONDITIONS Symbol Min Max Unit Symbol Min Max Unit Operating Temperature (Mil.) TA -55 +125 °C Supply Voltage VCC 4.5 5.5 V Operating Temperature (Ind.) TA -40 +85 °C Input High Voltage VIH 2.2 V CC + 0.5 V T STG -65 +150 °C Input Low Voltage VIL -0.3 +0.8 V VG -0.5 Vcc + 0.5 V Operating Temperature (Mil.) TA -55 +125 °C VCC -0.5 7.0 V Operating Temperature (Ind.) TA -40 +85 °C Storage Temperature Signal Voltage Relative to GND Supply Voltage Parameter SRAM CAPACITANCE (T A = +25°C) Parameter Symbol Condition Input capacitance CIN VIN = 0V, f = 1.0MHz Max Unit 6 pF Output capicitance COUT VOUT = 0V, f = 1.0MHz 8 pF This parameter is guaranteed by design but not tested. DC CHARACTERISTICS (VCC = 5.0V, V SS = 0V, TA = -55°C to +125°C) Parameter Sym Conditions Units Min Max 10 µA Input Leakage Current ILI VCC = 5.5, VIN = GND to VCC Output Leakage Current ILO CS = V IH, OE = VIH, VOUT = GND to VCC 10 µA Operating Supply Current ICC CS = V IL, OE = VIH , f = 5MHz, Vcc = 5.5 200 mA Standby Current ISB CS = V IH, OE = VIH, f = 5MHz, Vcc = 5.5 15 mA Output Low Voltage VOL IOL = 8mA, VCC = 4.5 0.4 V Output High Voltage VOH IOH = -4.0mA, VCC = 4.5 2.4 V NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V DATA RETENTION CHARACTERISTICS (TA = -55°C to +125°C) Parameter Symbol Conditions Units Min Data Retention Current CS V CC -0.2V VCC = 3V * Also available in Low Power version. Please call factory for informaion. White Microelectronics · Phoenix, AZ · (602) 437-1520 2 Max 5.5 V 1.0 V DR I CCDR1 Data Retention Supply Voltage Typ 3.0* mA 2.0 WPS256K16-XLJX WPS256K16-XLJX AC CHARACTERISTICS (V CC = 5.0V, VSS = 0V, TA = -55°C to +125°C) Parameter Symbol Read Cycle -17* Min Read Cycle Time tRC Address Access Time t AA Output Hold from Address Change t OH Chip Select Access Time -20 Max 17 t ACS Min -25 Max 20 Units Max 25 17 3 Min nS 20 4 25 nS 25 nS 15 nS 5 17 nS 20 Output Enable to Output Valid tOE Chip Select to Output in Low Z t CLZ 1 5 5 5 Output Enable to Output in Low Z t OLZ1 0 0 0 Chip Disable to Output in High Z t CHZ 1 10 10 12 nS Output Disable to Output in High Z t OHZ 1 10 10 12 nS t BA 12 12 14 nS 12 nS LB, UB Access Time LB, UB Enable to Low Z Output t BLZ1 LB, UB Disable to High Z Output 12 tBHZ 1 0 12 0 nS nS 0 10 nS 10 1. This parameter is guaranteed by design but not tested. 13 * Commercial temperature range only. AC CHARACTERISTICS (V CC = 5.0V, V SS = 0V, TA = -55°C to +125°C) Parameter Symbol -17* Min -20 Max Min -25 Max Min Units Max Write Cycle Time t WC 17 20 25 nS Chip Select to End of Write t CW 15 17 20 nS Address Valid to End of Write tAW 15 17 20 nS Data Valid to End of Write t DW 12 12 15 nS Write Pulse Width tWP 15 17 20 nS Address Setup Time t AS 0 0 0 nS Address Hold Time t AH 0 0 0 nS Output Active from End of Write t OW1 0 0 0 Write Enable to Output in High Z t WHZ 1 10 10 nS 10 nS Data Hold Time tDH 0 0 0 nS LB, UB Valid to End of Write tBW 15 17 20 nS 1. This parameter is guaranteed by design but not tested. * Commercial temperature range only. AC TEST CIRCUIT AC TEST CONDITIONS I OL Parameter Current Source Typ Unit Input Pulse Levels (Bipolar Supply) C eff = 50 pf I OH Current Source 3 nS 1.5 V Output Timing Reference Level 1.5V 5 Input and Output Reference Level VZ V Input Rise and Fall D.U.T. VIL = 0, V IH = 3.0 1.5 V NOTES: V Z is programmable from -2V to +7V. I OL & IOH programmable from 0 to 16mA. Tester Impedance Z0 = 75 . V Z is typically the midpoint of V OH and V OL. I OL & IOH are adjusted to simulate a typical resistive load circuit. ATE tester includes jig capacitance. White Microelectronics · Phoenix, AZ · (602) 437-1520 SRAM Write Cycle WPS256K16-XLJX WPS256K16-XLJX TIMING WAVEFORM - READ CYCLE tRC ADDRESS tAA CS tACS tCHZ tBA tBLZ tCLZ tBHZ LB, UB tRC ADDRESS tAA OE tOH DATA I/O tOE tOLZ PREVIOUS DATA VALID DATA VALID tOHZ DATA I/O DATA VALID HIGH IMPEDANCE 13 READ CYCLE 1 (CS = OE = VIL, UB or LB = VIL, WE = VIH) READ CYCLE 2 (WE = VIH) WRITE CYCLE - WE CONTROLLED tWC ADDRESS tAW tAH tCW SRAM CS tBW LB, UB tAS tWP WE tOW tWHZ tDW DATA I/O tDH DATA VALID WRITE CYCLE 1, WE CONTROLLED WRITE CYCLE - LB, UB CONTROLLED WRITE CYCLE - CS CONTROLLED tWC tWC WS32K32-XHX WS32K32-XHX t ADDRESS ADDRESS tAS tAW tAH tCW tAS CS AW tAH tCW CS tBW tBW LB, UB LB, UB tWP tWP WE WE tDW DATA I/O tDH tDW DATA I/O DATA VALID WRITE CYCLE 2, CS CONTROLLED White Microelectronics · Phoenix, AZ · (602) 437-1520 DATA VALID WRITE CYCLE 3, LB, UB CONTROLLED 4 tDH WPS256K16-XLJX WPS256K16-XLJX 44 LEAD, PLASTIC SOJ (400 mil) 28.7 (1.130) 28.4 (1.120) 11.30 (0.445) 11.05 (0.435) 10.16 (0.400) TYP 9.65 (0.380) #23 9.14 (0.360) #44 #22 #1 0.66 (0.026) 0.81 (0.032) 0.69 (0.027) MIN 13 3.76 (0.148) MAX 0.004" max 0.95 (0.0375) TYP 1.27 (0.05) TYP 0.38 (0.015) 0.53 (0.021) DIMENSIONS IN MILLIMETERS AND (INCHES) SRAM ORDERING INFORMATION W P S 256K 16 X - XXX LJ X DEVICE GRADE: M = Military Temperature -55°C to +125°C I = Industrial Temperature -40°C to +85°C C = Commercial Temperature 0°C to +70°C PACKAGE: LJ = 44 Lead Plastic SOJ ACCESS TIME in nS IMPROVEMENT MARK B = Burn-in T = Temperature Cycling C = Burn-in and Temperature Cycle ORGANIZATION, 256K x 16 SRAM PLASTIC PLUSTM WHITE MICROELECTRONICS 5 White Microelectronics · Phoenix, AZ · (602) 437-1520