NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: SDZ3V0Q Semiconductor Zener Diode Application · Constant voltage regulation · Reference voltage application Features · Small and compact SMD package used SOD523 · Zener voltage VZ= 3V type Ordering Information Type NO. Marking SDZ3V0Q Package Code W8 SOD-523 Outline Dimensions unit : mm 0.70~0.90 0.32 Max. 1.50~1.70 1.10~1.30 1 2 KSD-D6D010-000 KSD-D6D010-000 0.16 Max. 0.10 Max. 0.60~0.80 CATHODE MARK PIN Connections 1. Anode 2. Cathode 1 SDZ3V0Q ... | Original |
3 pages, |
SDZ3 mark W8 Diode diode marking w8 W8 mark Diode zener smd marking w8 MARK smd diode general semiconductor zener diode application datasheet abstract |
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| Abstract: BZT52C2V0T BZT52C2V0T - BZT52C24T BZT52C24T SURFACE MOUNT ZENER DIODE Lead-free Green · · · · · Planar Die Construction Ultra-Small Surface Mount Package Ideally Suited for Automated Assembly Processes Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Dim B A Case Material: Molded Plastic , · · SOD-523 CATHODE MARK XX NEW PRODUCT Features Ordering Information: See Page 3 , 5 80 500 1.0 3.0 2.0 -3.5 0.2 5 BZT52C5V1T BZT52C5V1T W8 5.1 4.8 5.4 ... | Original |
4 pages, |
BZT52C24T BZT52C2V0T BZT52C2V4T BZT52C2V7T BZT52C3V0T BZT52C3V3T C15T C12-T- marking code zener diode wl W8 mark Diode c15T diode BZT52C2V0T abstract |
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| Abstract: SPICE MODELS: BZT52C2V0T BZT52C2V0T BZT52C2V4T BZT52C2V4T BZT52C2V7T BZT52C2V7T BZT52C3V0T BZT52C3V0T BZT52C3V3T BZT52C3V3T BZT52C3V6T BZT52C3V6T BZT52C3V9T BZT52C3V9T BZT52C4V3T BZT52C4V3T BZT52C4V7T BZT52C4V7T BZT52C5V1T BZT52C5V1T BZT52C2V0T BZT52C2V0T - BZT52C24T BZT52C24T SURFACE MOUNT ZENER DIODE Lead-free Green BZT52C5V6T BZT52C5V6T BZT52C6V2T BZT52C6V2T BZT52C6V8T BZT52C6V8T BZT52C7V5T BZT52C7V5T BZT52C8V2T BZT52C8V2T BZT52C9V1T BZT52C9V1T BZT52C10T BZT52C10T BZT52C11T BZT52C11T BZT52C12T BZT52C12T BZT52C13T BZT52C13T , CATHODE MARK XX NEW PRODUCT Features Ordering Information: See Page 3 Terminal Connections , 3.0 2.0 -3.5 0.2 5 BZT52C5V1T BZT52C5V1T W8 5.1 4.8 5.4 5 60 480 1.0 ... | Original |
4 pages, |
marking code zener diode wl BZT52C2V0T BZT52C2V4T BZT52C2V7T BZT52C3V3T BZT52C3V6T BZT52C3V9T BZT52C4V3T BZT52C4V7T BZT52C5V1T BZT52C3V0T BZT52C18T BZT52C24T BZT52C2V0T abstract |
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| Abstract: form : SA X1 X2 X3 X4 X5X6 X7X8X9X10X11 X7X8X9X10X11 W0 Cool white W8 Warm white Acriche series 4 , mark 2.95 1.0 2. Recommended PCB solder pad 6.4 Temperature check point 6.4 0.5 2.6 , SAWX4A0X for AC source * Notes : [1] A4 series need bridge diode and external resistor. [2] The ... | Original |
15 pages, |
AX4240-0X acriche 2 Acriche SAW04A0A X10490 X10490 abstract |
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| Abstract: X7X8X9X10X11 X7X8X9X10X11 W0 Cool white W8 Warm white Acriche series 4 A4 series X4 Voltage A , 7.0 6.4 2.6 4.4 Cathode mark 2.95 1.0 2. Recommended PCB solder pad 6.4 Temperature , instructions 1. Basic connections of SAWX4A0X for AC source * Notes : [1] A4 series need bridge diode and ... | Original |
15 pages, |
AX4240-0X smd diode code WP X10490 X10490 abstract |
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| Abstract: mark information clarification (Section 6) 10/03/98 -003 Byte-Wide Protection Register Address , 2. Mark for Pin-1 indicator on 48-Lead 8Mb, 16Mb and 32Mb TSOP Current Mark: New Mark: Note , for resistor or diode drop from the system supply. Apply VPP to 12 V ± 5% for faster program and ... | Original |
68 pages, |
te28f320c3bd70 TE28F320C3BC TE28F160C3BD 28F800C3 28F640C3 28F320C3 28F160C3 unlock 28F800C3 abstract |
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| Abstract: mark information clarification (Section 6) 10/03/98 -003 Byte-Wide Protection Register Address , Datasheet 9 Intel£ Advanced+ Boot Block Flash Memory (C3) Figure 2. Mark for Pin-1 indicator on 48-Lead 8Mb, 16Mb and 32Mb TSOP Current Mark: New Mark: Note: Table 1. The topside marking on , for resistor or diode drop from the system supply. Apply VPP to 12 V ± 5% for faster program and ... | Original |
68 pages, |
VFBGA 48ball TE28F160C3BD INTEL FLASH MEMORY pcn 28F800C3 28F640C3 28F320C3 28F160C3 28F800C3 abstract |
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| Abstract: is not desired to signal the second DC estimation, then an internal timer is used to mark the end , for the digital IF circuits. Supply voltage for the digital IF circuits. This diode structure is , W7 W8 W9 W10 W11 W12 W13 W14 Time 0 t1 t2 t3 t4 t5 t6 , after t6 W8 5 80e3 BypassSM, PU_XTAL, PU_MULT, CalRxFil, PLL_BW, PU_TX t8: 285us after , of BDCLK after rising edge of W8 W10 5 80d2 BypassSM, PU_XTAL, PU_MULT, CalRxPLL_Int ... | Original |
24 pages, |
W8 mark Diode 24 a W8 mark Diode tcxo 13MHz RF2968 RF2172 CON20 bluetooth transmitter circuit diagram ANTENNA RF RF2968 abstract |
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| Abstract: THS1240 THS1240 Ensure that the printed-circuit assembly (PCA) has the correct check mark on the silkscreen. , MAX6250BCSA MAX6250BCSA / MAX6250ACSA MAX6250ACSA 8SOP(D) Wire Jumper Defaults: MASK W1 W13 W8 Jumper option 24 AWG , 1 D2 BAV99 BAV99 SOT23 Dual, small-signal diode General Semiconductor BAV99 BAV99 2 C1 , Connects REFOUT+ to REFIN+ W8 Connects the clock signal from J5 to circuit used to derive CLK signal , installed N/A W8 Jumper installed N/A W9 Jumper installed Jumper not installed W10 ... | Original |
34 pages, |
ADT1-6T-3 GRM42-6COG* 1206 PACKAGE SG-8002DC-40 THS1240 THS3201ID TWS-102 adt4-6t-1 CR1206-FX-103 HP33120A GRM40cog w2a sot-23 GRM42-6COG TLC1431 THS1240 abstract |
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| Abstract: reference to the product mark. 2.2 Figure 3: 64-Ball Easy BGA Package Easy BGA Mechanical , ) A1 Index Mark 1 A B C D E F G H J K L M D 2 3 4 5 6 7 8 A B C D E F G H J K L M b E 8 7 6 5 4 3 2 1 , of the package, in reference to the product mark. Datasheet 11 Apr 2010 Order Number:208033-02 , will always be in the upper left corner of the package, in reference to the product mark. Datasheet , resistor or diode drops from the system supply, the VIH level of VPP can be as low as VPPL min. VPP must ... | Original |
90 pages, |
datasheet abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
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| .6.5 W6 - Keypad interrupt enable 20 2.6.6 W7 - FDC MSEN 20 2.6.7 W8 - Audio DMA Request 20 2.6.8 W9 of IRQ12 IRQ12 IRQ12 IRQ12. W7 - FDC MSEN See Super I/O™ data sheet. W8 - Audio DMA Request W8 enables the Audio ohm resistor, R64, sets the charging current to nominal value of 3 ma. No diode switching is necessary output by driving a positive voltage into the summing junction through diode CR3. When bit 7 is high, the inverter output is low turning off the diode, allowing U76C to scale the DAC output and turning on LED DS2 www.datasheetarchive.com/download/83212864-549407ZC/demobd.zip (TOP11.DOC) |
National | 29/04/1997 | 1334.54 Kb | ZIP | demobd.zip |
| .6.5 W6 - Keypad interrupt enable 20 2.6.6 W7 - FDC MSEN 20 2.6.7 W8 - Audio DMA Request 20 2.6.8 W9 of IRQ12 IRQ12 IRQ12 IRQ12. W7 - FDC MSEN See Super I/O™ data sheet. W8 - Audio DMA Request W8 enables the Audio ohm resistor, R64, sets the charging current to nominal value of 3 ma. No diode switching is necessary output by driving a positive voltage into the summing junction through diode CR3. When bit 7 is high, the inverter output is low turning off the diode, allowing U76C to scale the DAC output and turning on LED DS2 www.datasheetarchive.com/download/56930619-512592ZC/wcd01048.zip (TOP11.DOC) |
National | 02/04/1998 | 1334.54 Kb | ZIP | wcd01048.zip |
| EVR PCK D0 D9 1k W 1k W 1k W 1k W V EE STV1602A STV1602A STV1602A STV1602A 0.1 m F 220 W 220 W 220 W 8 V EE (-5V) ECL line 4 fsc (D2 NTSC and PAL). Differing from the 4:2:2 case, SYN output has an equal mark and space ratio a diode (transistor with C-B diode short-circuited) and a resistor between FV and V EE . PLL pull www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1156.htm |
STMicroelectronics | 02/04/1999 | 29.8 Kb | HTM | 1156.htm |
| EE STV1602A STV1602A STV1602A STV1602A 0.1 m F 220 W 220 W 220 W 8 V EE (-5V) ECL line drivers or ECL for 4 fsc (D2 NTSC and PAL). Differing from the 4:2:2 case, SYN output has an equal mark and circuit using a diode (transistor with C-B diode short-circuited) and a resistor between FV and V EE www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1156-v1.htm |
STMicroelectronics | 25/05/2000 | 31.58 Kb | HTM | 1156-v1.htm |
| EVR PCK D0 D9 1k W 1k W 1k W 1k W V EE STV1602A STV1602A STV1602A STV1602A 0.1 m F 220 W 220 W 220 W 8 V EE (-5V) ECL line 4 fsc (D2 NTSC and PAL). Differing from the 4:2:2 case, SYN output has an equal mark and space ratio a diode (transistor with C-B diode short-circuited) and a resistor between FV and V EE . PLL pull www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1156-v2.htm |
STMicroelectronics | 14/06/1999 | 29.76 Kb | HTM | 1156-v2.htm |
| EVR PCK D0 D9 1k W 1k W 1k W 1k W V EE STV1602A STV1602A STV1602A STV1602A 0.1 m F 220 W 220 W 220 W 8 V EE (-5V) ECL line 4 fsc (D2 NTSC and PAL). Differing from the 4:2:2 case, SYN output has an equal mark and space ratio a diode (transistor with C-B diode short-circuited) and a resistor between FV and V EE . PLL pull www.datasheetarchive.com/files/stmicroelectronics/books/ascii/docs/1156.htm |
STMicroelectronics | 25/05/2000 | 34.22 Kb | HTM | 1156.htm |
| voltage of the drain junctions. Impact ionization causes high current to flow through the diode. The , shorting the drain/substrate diode and resulting in a pad- V SS leakage path. Junction damage can also /substrate diode. This type of damage is visible only after a decoration etch is performed to highlight areas of address mark wake-up be used and when should idle line wake-up be used? ' answer[41]=' The wake -up method, address mark, which is implemented by setting the Wake-up Mode Select (WAKE) bit of the SCCR1 www.datasheetarchive.com/files/motorola/faq/index.htm |
Motorola | 21/02/2000 | 441.5 Kb | HTM | index.htm |
| voltage of the drain junctions. Impact ionization causes high current to flow through the diode. The , shorting the drain/substrate diode and resulting in a pad- V SS leakage path. Junction damage can also /substrate diode. This type of damage is visible only after a decoration etch is performed to highlight areas of address mark wake-up be used and when should idle line wake-up be used? ' answer[41]=' The wake -up method, address mark, which is implemented by setting the Wake-up Mode Select (WAKE) bit of the SCCR1 www.datasheetarchive.com/files/motorola/faq/index-v1.htm |
Motorola | 21/02/2000 | 441.62 Kb | HTM | index-v1.htm |
| the diode. The current (and heat generated) eventually becomes localized due to some non-uniformity in diffusion and into the substrate, shorting the drain/substrate diode and resulting in a pad- V between p- and n- type regions and a leaky drain/substrate diode. This type of damage is visible only should SCI address mark wake-up be used and when should idle line wake-up be used? The wake -up method, address mark, which is implemented by setting the Wake-up Mode Select (WAKE) bit of the SCCR1 www.datasheetarchive.com/files/motorola/faq/mcufaq.txt |
Motorola | 21/02/2000 | 401.87 Kb | TXT | mcufaq.txt |
| Configuration Warning: Write 0Ch in this register to use the ICAP1 and ICAP2 functions. 08h R/W 8 9/80 ST72272 ST72272 ST72272 ST72272 www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5840.htm |
STMicroelectronics | 02/04/1999 | 131.73 Kb | HTM | 5840.htm |