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Abstract: close approximation of the correct capacitor value is: C* _ W5014 p To where c* = C2 + CSTRAY The ... OCR Scan
datasheet

7 pages,
249.01 Kb

signetics PLL NE568 SA568AN SA568AD philip NE568AN NE568AD NE568A NE568 PHILIP qs NE/SA568A NE/SA568A abstract
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Abstract: PTF 10122 50 Watts WCDMA, 2.1­2.2 GHz GOLDMOSTM Field Effect Transistor Description · The PTF 10122 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 50 watts power output, with 11 dB of gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. · · · · · · INTERNALLY MATCHED Guaranteed Performance at 2.17 GHz, 28 V - Out ... Original
datasheet

6 pages,
261.92 Kb

capacitor siemens 4700 35 datasheet abstract
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Abstract: JPM05 JPM05 E L E C T R O N I C C O M P O N E N T S DC Solenoids Contents & Features Index & DC Solenoids Features .1 Solenoid Specifications .2 Product List .3 How to Select Solenoids . 4 - 8 DC Solenoids (PM Type) . ... Original
datasheet

20 pages,
369.48 Kb

DC solenoid JPM0288 JPM0298 JPM0328 JPM0364 JPM1210 JPM1316 Push type solenoid switch JSM0105 latching solenoid solenoid JPM1535 JPM0822 hosiden JPM05 JPM05 abstract
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Abstract: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H4047M RA45H4047M RoHS Compliance, 400-470MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H4047M RA45H4047M is a 45-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to 470-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the dr ... Original
datasheet

8 pages,
105.51 Kb

RA45H4047M-101 RA45H4047M RA45H4047M abstract
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Abstract: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H4047M RA45H4047M RoHS Compliance, 400-470MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H4047M RA45H4047M is a 45-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to 470-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the dr ... Original
datasheet

9 pages,
91.61 Kb

RA45H4047M-101 circuit diagram power amplifier 450w RF MOSFET MODULE RA45H4047M RA45H4047M abstract
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Abstract: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H4047M RA45H4047M 400-470MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H4047M RA45H4047M is a 45-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to 470-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF in ... Original
datasheet

9 pages,
90.18 Kb

RA45H4047M-01 RA45H4047M RA45H4047M abstract
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Abstract: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H4047M RA45H4047M 400-470MHz 45W 12.5V MOBILE RADIO DESCRIPTION The RA45H4047M RA45H4047M is a 45-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to 470-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuate ... Original
datasheet

9 pages,
90.2 Kb

RA45H4047M-E01 RA45H4047M-01 RA45H4047M RA45H4047M abstract
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Abstract: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H4047M RA45H4047M RoHS Compliance, 400-470MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H4047M RA45H4047M is a 45-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to 470-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the ... Original
datasheet

9 pages,
93.06 Kb

RA45H4047M-101 RA45H4047M RA45H4047M abstract
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Abstract: A Strangkühlkörper für Leiterplattenmontage Extruded heatsinks for PCB mounting Dissipateurs extrudés pour montage PCB 34,9 16 12,7 1,5 3,2 6,5 18,3 P 25,4 E Ø 2,3 max. .STC 6,5 1,5 6 max. 3 4,5 max. 10,8 25,4 Ø7 M3 Ø6 Ø 2,3 max. .STIC .STCB P = erhöhter Arretierungspunkt E = Einbauart P = raised retaining stud E = fixing method P = point d'arrêt surélevé E = manière de fixation für Halbleiter Clipmonta ... Original
datasheet

20 pages,
2663.22 Kb

Heatsinks to-220 leistungstransistoren POWER TRANSISTOR TO-220 transistor STS SOT SK 50 et 12 transistor et 454 datasheet abstract
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