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LT4351CMS Linear Technology LT4351 - MOSFET Diode-OR Controller; Package: MSOP; Pins: 10; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LT4351IMS Linear Technology LT4351 - MOSFET Diode-OR Controller; Package: MSOP; Pins: 10; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT4351CMS#PBF Linear Technology LT4351 - MOSFET Diode-OR Controller; Package: MSOP; Pins: 10; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LT4351CMS#TR Linear Technology LT4351 - MOSFET Diode-OR Controller; Package: MSOP; Pins: 10; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LT4351CMS#TRPBF Linear Technology LT4351 - MOSFET Diode-OR Controller; Package: MSOP; Pins: 10; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LT4351IMS#PBF Linear Technology LT4351 - MOSFET Diode-OR Controller; Package: MSOP; Pins: 10; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

Varo Semiconductor diode

Catalog Datasheet MFG & Type PDF Document Tags

varo diode

Abstract: H1812 VARO (QUALITY High Voltage Diode H1812 Designed for B & W TV High Voltage Rectifier up to 20 kVDC CRT Voltage Avalanche Quality Rectifier Junctions Molding Material Rated UL 94 V-O Uniform , fl kU jm VARO SEMICONDUCTOR, INC., P.O. Box 469013 ^^ 1000 N. Shiloh; Garland, Texas 75046-9013 VARO (214) 271 -8511 TWX 910-860-5178 05089 June 1982 Band on Cathode End LTR A B C D 171 VARO , Temperature: 260°C Max. for 10 sec. max. 1/16? from epoxy Encapsulating Considerations: See Varo
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P6042 varo diode varo semiconductor Varo integrated rectifiers h1812 diode Varo Semiconductor high voltage diode h1812 VARO 00QCHE7 I--63 BP214A

varo diode

Abstract: Varo Semiconductor G VARO SEMICONDUCTOR, INC. P.O. BOX 676. 1000 N. SHILOH, GARLAND, TEX. 75040 (214)272-4551 TWX , number of individual diode packages used in series for the completed, unencapsulated rectifier. Each diode package contains a stack of controlled avalanche chips. In order to achieve the rated voltage and , diodes used, Varo type H463 may be purchased separately. L .56 r I .50 I .38 â'" , 6.00 T .50 , 'ž. â'ž .,â'ž v. - (Max.) No. of Individual i PRIC!_N(L Vivn.'i|kV) I") i = so mA Diode Packages 1-99
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MH911 MH919 MH353 varo MH911 Varo Semiconductor diode High Voltage Multipliers VARO H467 High Voltage Multipliers DLS-047

varo diode

Abstract: High Voltage Multipliers VARO VARO ÃUALITY vy VARO SO 1)^1^443333 0000^55 7 - zj^os- VARO SEMICONDUCTOR, INC., P.O. Box 469013 1000 N. Shlioh; Garland, Texas 75046-9013 (214) 271-8511 TWX 910-860-5178 High Voltage Glass , diode series Is not designed to operate In air; possible atmospnerlc corrosion of the lead weld Joint , .0236+»0015 0,6 D .135 Max 3,43 169 VARO DUALITY ~5G c1443333 DGOOISh h IU a B § i- O. H O OC , FIG. 2A 170 01883 Vho Semiconductor â'¢ Specfications subfect |p change without notice.
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varo tripler diode varo vf 30 HP-214A H1701 FC-43 HP214A

varo diode

Abstract: 1N1158 Genrl Diode Varo Qualty Sensitron CnmsonSemi Space Power CrimsonSemi Semi Inc Diodes Inc Semicon Com Motorola See Index Indust Mexi Genrl Diode ITTSemilntr Westcode Varo Qualty Sensitron CrimsonSemi Space , Ongin Elec See Index Genrl Diode Varo Qualty Sensitron CrimsonSemi Space Power Genrl Diode ITTSemilntr , Diode ITTSemilntr Westcode Varo Qualty CnmsonSemi Space Power CnmsonSemi Semi Inc Diodes Inc Semicon Com See Index See Index Genrl Diode Genrl Diode Genrl Diode ITTSemilntr Westcode Varo Qualty CnmsonSemi
Advanced Semiconductor
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VHE2401 1S1288 1N1158 1N249B MR2001 1N1159 1n1157 1N1160 BYY16 RM10TB NCR20-600 1N3372 1N3373 SSCDA05HE 1N3374

CHN 650

Abstract: CHN 749 VARO SEMICONDUCTOR, INC., P.O. Box 469013 1000 N. Shiloh; Garland, Texas 75046-9013 VARO (214) 271 -8511 TWX 910-860-5178 6 Amp Epoxy Bridge Rectifiers vh series January 1984 Glass Passivated Silicon Chips Controlled Avalanche Series with 250V, 450V, 650V, and 850V Minimum Avalanche Ratings , 1100 1300 NA Volts Maximum Instantaneous Forward Voltage Drop (per diode) at 6 Amps (Fig. 3) vFM , .195-.205 4.95 - 5.21 25 26 © 19Ã4 Viro Semiconductor â'¢ Spécification subject to change without
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VH247 VH447 VH647 VH448 VH648 CHN 650 CHN 749 Varo Semiconductor avalanche Varo vh247 chn 610 chn 850 VHB47 VH048 VH148

Varo R711

Abstract: R712  VARO VARO SEMICONDUCTOR, INC., P.O. Box 469013 1000 N. Shiloh; Garland, Texas 75046-9013 (214 , n sec Square Wave (Per diode) Prm 1500 NA NA Watts Continuous Power Dissipation In V,Bm , , (Non-Rep) and Tc = 100°C (Per diode) (Fig. 2) Ifsm 300 150 Amps Peak Surge Current, 1 sec at 60 Hz and Tc = 100°C (Per diode) (Fig. 2) 'frm 60 50 Amps Avg. Forward Current at Tc = 100"C (Per diode) lo 15 Amps Junction Operating and Storage Temperature Range . Tj' Tstq 65
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R711X R712X R714X Varo R711 R712 Varo R712X R704 R716 R711 R716X

varo diode

Abstract: VSK330 o VARO T" o VARO SEMICONDUCTOR, INC., P.O. Box 469013 1000 N. Shiloh; Garland, Texas 75046-9013 (214) 271-8511 TWX 910-860-5178 3 Amp Schottky Barrier Rectifiers January 1960 20 Volt, 30 Volt , rectifier may be considered for purposes of circuit analysis, as an ideal diode in parallel with a variable capacitance equal in value to the junction capacitance. See Figure 3. C1983 V«ro Semiconductor â , Viro Semiconductor â'¢ Specfications subject to change without notice.
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VSK320 VSK330 VSK340 rectifier diode 6 amp 400 volt diode VSK330 varo capacitor

RM10TB-H

Abstract: 1S1288R E7F3 S2135 1N3965 1N2785 See Index Sansha Elec Sansha Elec Ongin Elec PhilipsElec Genrl Diode Genrl Diode ITTSemilntr Westcode Varo Qualty CrimsonSemi Space Power See Index See Index Genrl Diode Genrl Diode ITTSemilntr Westcode Varo Qualty Sanken Elec Sanken Elec Sanken Elec Sanken Elec Semicon Com , Diode Genrl Diode Genrl Diode ITTSemilntr Diodes Inc Semicon Com ThmsnCSFEFC Semikron MitsubiElec , PhilipsElec Genrl Diode Genrl Diode Genrl Diode Genrl Diode Genrl Diode Genrl Diode Genrl Diode Edal Indus
Central Semiconductor
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RN820 RM10TB-H BYX25-800 BYX13-800 1S1288R S2120 T20A6 Sanken STR tm59 BYX13 1N2283 DG20AA40M DG20AA40 S20-04 BYX13-400 TR502

Varo Semiconductor diode

Abstract: J roaueti, Dnc. J. c/ TELEPHONE: (973) 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MUR1630CT Ultrafast Recovery Rectifier FEATURES â'¢ Ultrafast Recovery Time â'¢ LOW ron/varo vouage â'¢ Low Leakage Current 4 â'¢Â» â'¢ 175 , IFM Peak Repetitive Forward Current (Rated VR, Square Wave,20kHz) Per Diode Leg 16 A C , Recovery Time IF= 0.5A, IR= 1A, lrr= 0.25A 60 ns New Jersey Semiconductor
New Jersey Semiconductor
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TQ-22QC

Varo Semiconductor diode

Abstract: C=ffVoa(; VarO V; f=1MHz Forward Characteristics of Reverse Diode IpsflfVso); ¿Ops pu lse test, Vas , > Turn-On-Time Turn-Off-Time U {to n = td (o ff)+ t f) O tr tf Avalanche Capability Diode , *rci â'"> lg ( A ] s u r e i -» Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370
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2SK2523-01

diode 5.1B3

Abstract: 74LVT16245DL PHILIPS INTERNATIONAL Philips Semiconductor* Low Voilage Products bSE ]> m 7iiafl2b DObi1^ S3Q Objective specification 3.3V ABT 16â'"bit transceiver with 3-state outputs 74LVT16245 FEATURES â'¢ 16-bit bidirectional bus interface â'¢ 3-State buffers â'¢ Output capability: +64mA/-32mA â'¢ TTL input and output , IK DC Input diode current V|k DC output diode , pin2 Vcc = 3V to 3.6V; One input at V«rO-6V, Other inputs at Vcc or GND 0.2 mA ipu/pd Power up
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LVT16245 74LVT diode 5.1B3 74LVT16245DL 74LVT16245DGG 51B3 sq 1b4 1 A/-32

TC4426 CAPACITOR INPUT

Abstract: TC4426 /4428 are CMOS buffer/drivers built using TelCom Semiconductor' new Tough CMOS process. They are , output stage transition region. · Hewlett Packard: P/N 5082-2303 · Motorola: P/N MBR120P · Varo: P/N VSB52 (Four diode bridge) To be effective the output clamp diodes must be connected close to the , device or 125°C for "MJA" device. Sales Offices TelCom Semiconductor 1300 Terra Bella Avenue P.O , : liter@c2smtp.telcom-semi.com TelCom Semiconductor Austin Product Center 9101 Burnet Rd. Suite 214 Austin, TX 78758 TEL
TelCom Semiconductor
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TC4426 CAPACITOR INPUT TC4426 am 4428 0.1 uf Ceramic disk Capacitor TelCom Semiconductor system design practice scr gate driver ic TC4426/27/28 TC4426/4427/4428 TC426/427/428
Abstract: Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION , a voltage two diode drops above ground. Either method causses the output of the PWM comparator to be , . www.ti.com OFFLINE FLYBACK REGULATOR R1 5 1W 117 VAC VARO VM 68 R12 4.7 k 2W R2 56 k 2W C9 , "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 , other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue Texas Instruments
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UC1843-H SLUS896A UC1843 ISO/TS16949
Abstract: applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this , V or pull pin 1 below a voltage two diode drops above ground. Either method causses the output of , 117 VAC VARO VM 68 R12 4.7 k 2W R2 56 k 2W C9 3300 pF 600 V D4 1N3613 T1 D6 U9D946 L1 +6 V C1 250 mF , been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are , corrections, enhancements, improvements and other changes to its semiconductor products and services per Texas Instruments
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UC1843-SP SLUS981

USD1120 ZENER

Abstract: USD1120 diode applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this , accomplished by two methods; either raise pin 3 above 1 V or pull pin 1 below a voltage two diode drops above , L1 +6 V VARO VM 68 C9 3300 pF 600 V R12 4.7 kâ"¦ 2W C1 250 mF 250 V R2 56 kâ , . Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with
Texas Instruments
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USD1120 ZENER USD1120 diode USD1120 smd transistor marking zf

USD1120

Abstract: USD1120 ZENER Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION , a voltage two diode drops above ground. Either method causses the output of the PWM comparator to be , . www.ti.com OFFLINE FLYBACK REGULATOR R1 5 1W 117 VAC VARO VM 68 R12 4.7 k 2W R2 56 k 2W C9 , "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6
Texas Instruments
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UFN833 varo vm 68 diode USD1120 Varo Semiconductor ufn833 ufn833 data USD112

USD1120

Abstract: UFN833 warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers , accomplished by two methods; either raise pin 3 above 1 V or pull pin 1 below a voltage two diode drops above , . www.ti.com OFFLINE FLYBACK REGULATOR T1 R1 5 1W 117 VAC D6 U9D946 L1 +6 V VARO , conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor
Texas Instruments
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USD1120 datasheet UF81002 2N2222 die 27 zener diode vm 68 1N3612

U9D946

Abstract: availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products , two diode drops above ground. Either method causses the output of the PWM comparator to be high , VARO VM 68 C9 3300 pF 600 V R12 4.7 kâ"¦ 2W C1 250 mF 250 V R2 56 kâ"¦ 2W C10 N5 , or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for
Texas Instruments
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USD1120 diode

Abstract: SmD TRANSISTOR a42 applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this , V or pull pin 1 below a voltage two diode drops above ground. Either method causses the output of , 117 VAC VARO VM 68 R12 4.7 k 2W R2 56 k 2W C9 3300 pF 600 V D4 1N3613 T1 D6 U9D946 L1 +6 V C1 250 mF , been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are
Texas Instruments
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SmD TRANSISTOR a42 PIN CONFIGURATION IC RT 3060 smd diode marking jg TRANSISTOR SMd jg data

USD1120 diode

Abstract: USD1120 Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION , a voltage two diode drops above ground. Either method causses the output of the PWM comparator to be , . www.ti.com OFFLINE FLYBACK REGULATOR R1 5 1W 117 VAC VARO VM 68 R12 4.7 k 2W R2 56 k 2W C9 , "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6
Texas Instruments
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130VA
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