VTE1281-1 VTE1281-2 - Datasheet Archive

 

VTE1281-1, -2 T-1¾ (5 mm) Plastic Package - 880 nm PACKAGE DIMENSIONS inch (mm) CASE 26 T-1¾ (5 mm) CHIP SIZE:

 

GaAlAs Infrared Emitting Diodes VTE1281-1 VTE1281-1, -2 T-1¾ (5 mm) Plastic Package - 880 nm PACKAGE DIMENSIONS inch (mm) CASE 26 T-1¾ (5 mm) CHIP SIZE: .015" x .015" DESCRIPTION This narrow beam angle 5 mm diameter plastic packaged emitter contains a medium area, single wirebonded, GaAlAs, 880 nm, high efficiency IRED chip. It is designed to be cost effective in moderate pulse drive applications. ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage and Operating: Continuous Power Dissipation: Derate above 30°C: Maximum Continuous Current: Derate above 30°C: Peak Forward Current, 10 µs, 100 pps: Temp. Coefficient of Power Output (Typ.): Maximum Reverse Voltage: Maximum Reverse Current @ VR = 5V: Peak Wavelength (Typical): Junction Capacitance @ 0V, 1 MHz (Typ.): Response Time @ IF = 20 mA Rise: 1.0 µs Fall: 1.0 µs Lead Soldering Temperature: (1.6 mm from case, 5 seconds max.) -40°C to 100°C 200 mW 2.86 mW/°C 100 mA 1.43 mA/°C 2.5 A -.8%/°C 5.0V 10 µA 880 nm 23 pF 260°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also GaAlAs curves, pages 108-110) Output Forward Drop Condition mW/cm2 Total Power VF Ie Irradiance Part Number Ee Half Power Beam Angle Test Current PO IFT @ IFT Volts Typ. Max. Radiant Intensity distance Diameter mW/sr mW 1/2 Min. Typ. mm mm Min. Typ. mA (Pulsed) VTE1281-1 VTE1281-1 2.5 3.3 36 6.4 32 20 100 1.5 2.0 ±10° VTE1281-2 VTE1281-2 5.0 6.5 36 6.4 65 25 100 1.5 2.0 ±10° Typ. Refer to General Product Notes, page 2. PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto 114