500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

VSO05561

Catalog Datasheet MFG & Type PDF Document Tags

diode T3 Marking

Abstract: diode MARKING A1 BBY53-05W Silicon Tuning Diode High Q hyperabrupt tuning diode Designed for low tuning voltage operation 3 for VCO's in mobile communications equipment High ratio at low reverse voltage C1/C2 3 2 1 VSO05561 1 A1 2 A2 EHA07179 Type BBY53-05W Marking S7s Pin Configuration 1 = A1 2 = A2 3=C1/2 Package SOT323 Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol VR IF Top Tstg Value 6 20 -55 . 150 -55 .
Infineon Technologies
Original
diode T3 Marking diode MARKING A1

VSO05561

Abstract: BBY 53-05W Silicon Tuning Diode 3 · High Q hyperabrupt tuning diode · Designed for low tuning voltage operation for VCO's in mobile communications equipment · High ratio at low reverse voltage 2 1 VSO05561 C1/C2 3 1 2 A1 A2 EHA07179 Type Marking BBY 53-05W S7s Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SOT-323 Maximum Ratings Parameter Symbol Diode reverse voltage VR 6 Forward current IF 20 mA Operating
Infineon Technologies
Original
Abstract: BBY 53-05W Silicon Tuning Diode 3 High Q hyperabrupt tuning diode Designed for low tuning voltage operation for VCO's in mobile communications equipment High ratio at low reverse voltage 2 #1; #1; #1; 1 VSO05561 C1/C2 3 1 2 A1 A2 EHA07179 Type Marking BBY 53-05W S7s Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SOT-323 Maximum Ratings Parameter Symbol Diode reverse voltage VR 6 Forward current IF 20 mA Operating Infineon Technologies
Original
Abstract: BBY 58-04W . BBY 58-06W Silicon Tunig Diodes Preliminary data · Excellent linearity · High Q hyperabrupt tuning diode · Low series inductance · Designed for low tuning voltage operation for VCO's in mobile communications equipment · For low frequency control elements such as TCXOs and VCXOs · Very low capacitance spread BBY 58-04W BBY 58-05W BBY 58-06W 3 2 1 VSO05561 Type BBY 58-04W BBY 58-05W BBY 58-06W Marking Ordering Code B4 B5 B6 Q62702Q62702Q62702- Pin Configuration 1 = A1 1 = A1 1 = C1 2 Siemens
Original
Abstract: BBY53-05W 3 Silicon Tuning Diode High Q hyperabrupt tuning diode Designed for low tuning voltage operation 2 for VCO's in mobile communications equipment High ratio at low reverse voltage 1 VSO05561 #1; #1; #1; C1/C2 3 1 2 A1 A2 EHA07179 Type BBY53-05W Marking S7s Pin Configuration 1 = A1 2 = A2 3=C1/2 Maximum Ratings Parameter Diode reverse voltage Symbol VR Forward current IF Operating temperature range Storage temperature Package Infineon Technologies
Original

BBY53-05W

Abstract: VSO05561 BBY53-05W Silicon Tuning Diode 3 · High Q hyperabrupt tuning diode · Designed for low tuning voltage operation for VCO's in mobile communications equipment · High ratio at low reverse voltage 2 1 VSO05561 C1/C2 3 1 2 A1 A2 EHA07179 Type Marking BBY53-05W S7s Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SOT323 Maximum Ratings Parameter Symbol Diode reverse voltage VR 6 Forward current IF 20 mA Operating
Infineon Technologies
Original

VSO05561

Abstract: BBY 52-05W Silicon Tuning Diode 3 · High Q hyperabrupt tuning diode · Designed for low tuning voltage operation for VCO's in mobile communications equipment 2 1 VSO05561 C1/C2 3 1 2 A1 A2 EHA07179 Type Marking BBY 52-05W S2s Pin Configuration 1=A1 2=A2 Package 3=C1/C2 SOT-323 Maximum Ratings Parameter Symbol Diode reverse voltage VR 7 Forward current IF 20 mA Operating temperature range Top -55 . 150 °C Storage
Infineon Technologies
Original

VSO05561

Abstract: MARKING 1t SOT- 323 BF 771W NPN Silicon RF Transistor 3 For modulators and amplifiers in TV and VCR tuners 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF 771W RBs Pin Configuration 1=B 2=E Package 3=C SOT-323 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 12 Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2
Infineon Technologies
Original
MARKING 1t SOT- 323

UHF diode

Abstract: bat17 BAT17-04W.BAT17-06W Silicon Schottky Diodes 3 For mixer applications in the VHF / UHF range For high-speed switching applications 2 1 BAT17-04W BAT17-05W BAT17-06W 3 3 VSO05561 3 1 2 1 2 EHA07005 1 2 EHA07006 EHA07004 Type Marking Pin Configuration Package BAT17-04W 54s 1 = A1 2 = C2 3 = C1/A2 SOT323 BAT17-05W 55s 1 = A1 2 = A2 3 = C1/2 SOT323 BAT17-06W 56s 3 = C1 2 = C2 3
Infineon Technologies
Original
UHF diode bat17 c2 sot323

VSO05561

Abstract: BBY52-05W BBY52-05W Silicon Tuning Diode 3 · High Q hyperabrupt tuning diode · Designed for low tuning voltage operation for VCO's in mobile communications equipment 2 1 VSO05561 C1/C2 3 1 2 A1 A2 EHA07179 Type Marking BBY52-05W S2s Pin Configuration 1=A1 2=A2 Package 3=C1/C2 SOT323 Maximum Ratings Parameter Symbol Diode reverse voltage VR 7 Forward current IF 20 mA Operating temperature range Top -55 . 150 °C Storage
Infineon Technologies
Original

DIODE T4 A1

Abstract: diode marking T4 BBY 52-05W Silicon Tuning Diode Preliminary data · High Q hyperabrupt tuning diode · Designed for low tuning voltage operation for VCO's in mobile communications equipment 3 2 1 C1/C2 3 VSO05561 1 A1 2 A2 EHA07179 Type BBY 52-05W Marking Ordering Code S2s upon request Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SOT-323 Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Value 7 20 -55 . 150 -55 . 150
Infineon Technologies
Original
DIODE T4 A1 diode marking T4

smd ct3

Abstract: marking code AC sot 323 diode BBY 53-05W Silicon Tuning Diode · For 2-Band-hyperband-TV-tuners · High capacitance ratio · Low series inductance · Low series resistance · Extremely small plastic SMD package · Excellent uniformity and matching due to "in-line" matching assembly procedure 3 2 1 VSO05561 Type BBY 53-05W Maximum Ratings Parameter Marking Ordering Code S7s Q62702- Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SOT-323 Symbol Value 6 20 -55 .+150 -55 .+150 Unit V mA °C Diode reverse
Siemens
Original
smd ct3 marking code AC sot 323 diode smd marking CT3

noise diode

Abstract: BAT15-05W BAT15-05W Silicon Schottky Diode DBS mixer applications up to 12 GHz Low noise figure Low barrier type 3 2 1 VSO05561 BAT 15-05W C1/C2 3 1 2 A1 A2 EHA07179 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BAT15-05W S5s Pin Configuration 1=A1 2=A2 Package 3=C1/C1 SOT323 Maximum Ratings Parameter Symbol Value Unit Diode reverse voltage VR 4 Forward current IF 110
Infineon Technologies
Original
noise diode EHD07079 EHD07081 EHD07082
Abstract: BBY 58-04W . BBY 58-06W 3 Silicon Tuning Diodes Excellent linearity High Q hyperabrupt tuning diode 2 Low series inductance Designed for low tuning voltage operation 1 for VCO's in mobile communications equipment VSO05561 For low frequency control elements such as TCXOs and VCXOs Very low capacitance spread #1; #1; #1; #1; #1; #1; BBY 58-04W BBY 58-05W 3 BBY 58-06W 3 3 1 2 1 2 EHA07005 1 2 EHA07006 EHA07004 Type Marking Pin Infineon Technologies
Original

A2 diode

Abstract: marking c2 diode BBY 57-05W Silicon Tuning Diode 3 · Excellent linearity · High Q hyperabrupt tuning diode · Low series inductance · High capacitance ratio 2 · Designed for low tuning voltage operation for VCO's in mobile communications equipment 1 · For control elements such as TCXOs and VCXOs VSO05561 C1/C2 3 1 2 A1 A2 EHA07179 Type Marking BBY 57-05W D6s Pin Configuration 1=A1 2=A2 Package 3=C1/C2 SOT-323 Maximum Ratings Parameter
Infineon Technologies
Original
A2 diode marking c2 diode

BAS40-04W

Abstract: BAS40-05W BAS40-04W.BAS40-06W 3 Silicon Schottky Diode General-purpose diode for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing BAS40-04W 2 1 BAS40-05W BAS40-06W 3 3 3 1 2 1 2 1 2 EHA07006 EHA07004 EHA07005 VSO05561 Type Marking Pin Configuration Package BAS40-04W 44s 1 = A1 2 = C2 3 = C1/A2 SOT323 BAS40-05W 45s 1 = A1 2 = A2 3 = C1/C2 SOT323 BAS40
Infineon Technologies
Original
EHB00159 EHB00158 EHB00156 EHB00157 EHD07169 EHD07168

BAT68-04W

Abstract: BAT68-05W BAT68W Silicon Schottky Diodes For mixer applications in the VHF / UHF range For high-speed switching applications 3 2 1 BAT68W BAT68-05W BAT68-04W 1 3 1 2 3 1 2 EHA07005 EHA07002 BAT68-06W 3 3 VSO05561 1 2 EHA07006 EHA07004 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package BAT68W 84s 1 = A1 2 =C2 3 = C1/A2 SOT323 BAT68-04W 85s 1 =
Infineon Technologies
Original
EHD07101 EHD07104 EHD07103

BCR135W

Abstract: VSO05561 BCR135W NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, Built in bias resistor (R1=10k , R 2=47k ) driver circuit 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR135W WJs Pin Configuration 1=B 2=E Package 3=C SOT323 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 50 Collector-base voltage VCBO 50 Emitter-base voltage VEBO 6
Infineon Technologies
Original

BCR166W

Abstract: VSO05561 BCR166W PNP Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, Built in bias resistor (R1=4.7k , R2=47k ) driver circuit 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07183 Type Marking BCR166W WTs Pin Configuration 1=B 2=E Package 3=C SOT323 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 50 Collector-base voltage VCBO 50 Emitter-base voltage VEBO 5
Infineon Technologies
Original

BCR183W

Abstract: VSO05561 BCR183W PNP Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=10k , R2 =10k ) 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07183 Type Marking BCR183W WMs Pin Configuration 1=B 2=E Package 3=C SOT323 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 50 Collector-base voltage VCBO 50 Emitter-base voltage VEBO 10
Infineon Technologies
Original

Pin diode G4S

Abstract: BAR63-04W BAR63.W Silicon PIN Diode 3 · PIN diode for high speed switching of RF signal · Low forward resistance · Very low capacitance 2 · For frequencies up to 3 GHz 1 BAR63-04W BAR63-05W C1/A2 BAR63-06W C1/C2 A1/A2 3 3 VSO05561 3 1 2 1 2 1 2 A1 C2 A1 A2 C1 C2 EHA07181 EHA07179 EHA07187 Type Marking Pin Configuration Package BAR63-04W G4s 1 = A1 2 = C2 BAR63-05W G5s 1 = A1 2 = A2 3
Infineon Technologies
Original
Pin diode G4S marking G5s diode C2 100MH EHD07139 EHD07138

VSO05561

Abstract: A7s marking diode BAV 99W Silicon Switching Diode Array 3 For high-speed switching applications Connected in series 2 C1/A2 3 1 1 2 A1 VSO05561 C2 EHA07181 Type Marking BAV 99W A7s Pin Configuration 1 = A1 2 = C2 Package 3 = C1/A2 SOT-323 Maximum Ratings Parameter Symbol Diode reverse voltage VR 70 Peak reverse voltage VRM 70 Forward current IF 200 mA Surge forward current, t = 1 s IFS 4.5 A Total power
Infineon Technologies
Original
A7s marking diode EHN00019 EHB00076 EHB00078 EHB00075

VSO05561

Abstract: BAS 16W Silicon Switching Diode 3 · For high-speed switching applications 2 1 VSO05561 1 3 EHA07002 Type Marking BAS 16W A6s Pin Configuration 1=A 2 = n.c. Package 3=C SOT-323 Maximum Ratings Parameter Symbol Diode reverse voltage VR 75 Peak reverse voltage VRM 85 Forward current IF 250 mA Surge forward current, t = 1 µs IFS 4.5 A Total power dissipation, TS = 119 °C Ptot 250 mW Junction
Infineon Technologies
Original
EHN00017 EHB00023 EHB00025 EHB00022

BAS16W

Abstract: VSO05561 BAS16W Silicon Switching Diode 3 For high-speed switching applications 2 1 VSO05561 1 3 EHA07002 Type BAS16W Marking A6s Pin Configuration 1=A 2 = n.c. 3=C Package SOT323 Maximum Ratings Parameter Symbol Diode reverse voltage VR 75 Peak reverse voltage VRM 85 Forward current IF 250 mA Surge forward current, t = 1 s IFS 4.5 A Total power dissipation, TS = 119 °C Ptot 250 mW Junction temperature
Infineon Technologies
Original
marking A6s

VSO05561

Abstract: w1901 BAV 70W Silicon Switching Diode Array 3 · For high-speed switching applications · Common cathode 2 C1/C2 3 1 1 2 A1 VSO05561 A2 EHA07179 Type Marking BAV 70W A4s Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SOT-323 Maximum Ratings Parameter Symbol Diode reverse voltage VR 70 Peak reverse voltage VRM 70 Forward current IF 200 mA Surge forward current, t = 1 µs IFS 4.5 A Total power
Infineon Technologies
Original
w1901 EHB00066 EHB00068 EHB00065

VSO05561

Abstract: BAW 56W Silicon Switching Diode Array 3 · For high-speed switching applications · Common anode 2 A1/A2 3 1 1 2 C1 VSO05561 C2 EHA07187 Type Marking BAW 56W A1s Pin Configuration 1 = C1 2 = C2 Package 3 = A1/A2 SOT-323 Maximum Ratings Parameter Symbol Diode reverse voltage VR 70 Peak reverse voltage VRM 70 Forward current IF 200 mA Surge forward current, t = 1 µs IFS 4.5 A Total power
Infineon Technologies
Original
EHB00091 EHB00093 EHB00090

BAT68-04W

Abstract: BAT68-05W BAT68-04W . BAT68-06W Silicon Schottky Diodes For mixer applications in the VHF / UHF range For high-speed switching applications 3 2 1 BAT68-05W BAT68-04W BAT68-06W 3 3 3 1 2 1 2 EHA07005 VSO05561 1 2 EHA07006 EHA07004 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package BAT68-04W 84s 1 = A1 2 =C2 3 = C1/A2 SOT323 BAT68-05W 85s 1 = A1 2 = A2 3
Infineon Technologies
Original
Showing first 20 results.