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E78996 VSKT152 - Datasheet Archive
Vishay High Power Products Thyristor/Thyristor, 150 A (New INT-A-PAK Power Module) FEATURES · Electrically isolated by DBC
VSKT152/04PbF Vishay High Power Products Thyristor/Thyristor, 150 A (New INT-A-PAK Power Module) FEATURES · Electrically isolated by DBC ceramic (AI2O3) · 3500 VRMS isolating voltage RoHS · Industrial standard package COMPLIANT · High surge capability · Glass passivated chips · Simple mounting · UL E78996 E78996 approved · Totally lead (Pb)-free New INT-A-PAK · Designed and qualified for multiple level APPLICATIONS PRODUCT SUMMARY · Battery charges IT(AV) 150 A · Welders · Power converters MAJOR RATINGS AND CHARACTERISTICS SYMBOL UNITS A 85 TC VALUES 150 IT(AV) CHARACTERISTICS °C 330 IT(RMS) 50 Hz I2 t 4000 60 Hz 4200 50 Hz 80 60 Hz ITSM 73 A kA2s I2t 800 kA2s VRRM 400 V TStg - 40 to 150 Range TJ °C - 40 to 125 ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VRRM/VDRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM/VDSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM/IDRM AT 125 °C mA VSKT152/04PbF 400 500 50 Document Number: 94514 Revision: 25-Apr-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 1 VSKT152/04PbF Vishay High Power Products Thyristor/Thyristor, 150 A (New INT-A-PAK Power Module) ON-STATE CONDUCTION PARAMETER Maximum average on-state current at case temperature Maximum RMS on-state current SYMBOL IT(RMS) As AC switch t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2 t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing Value of threshold voltage On-state slope resistance Maximum on-state voltage drop I2t VT(TO) rt VTM A 85 t = 8.3 ms ITSM UNITS °C 180° conduction half sine wave t = 10 ms Maximum peak, one-cycle on-state, non-repetitive surge current VALUES 150 IT(AV) TEST CONDITIONS 330 4000 No voltage reapplied 100 % VRRM reapplied No voltage reapplied 4200 A 3350 Sine half wave, initial TJ = TJ maximum 100 % VRRM reapplied 3500 80 73 kA2s 56 51 800 kA2s 0.82 V 1.44 m Ipk = x IT(AV), TJ = 25 °C 1.48 V t = 0.1 to 10 ms, no voltage reapplied TJ maximum Maximum holding current IH TJ = 25 °C, anode supply = 6 V, resistive load, gate open circuit 200 Maximum latching current IL TJ = 25 °C, anode supply = 6 V, resistive load 400 mA SWITCHING PARAMETER Typical delay time Typical rise time Typical turn-off time SYMBOL tgd tgr tq TEST CONDITIONS TJ = 25 °C Gate current = 1 A, dlg/dt = 1 A/µs Vd = 0.67 % VDRM ITM = 300 A, - dl/dt = 15 A/µs; TJ = TJ maximum VR = 50 V; dV/dt = 20 V/µs; gate 0 V, 100 VALUES UNITS 1 2 µs 50 to 200 BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 50 mA 50 Hz, circuit to base, all terminals shorted, t = 1 s 3500 V TJ = TJ maximum, exponential to 67 % rated VDRM 1000 V/µs Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = 125 °C RMS insulation voltage VINS Critical rate of rise of off-state voltage dV/dt www.vishay.com 2 For technical questions, contact: ind-modules@vishay.com Document Number: 94514 Revision: 25-Apr-08 VSKT152/04PbF Thyristor/Thyristor, 150 A Vishay High Power Products (New INT-A-PAK Power Module) TRIGGERING PARAMETER SYMBOL TEST CONDITIONS VALUES PGM Maximum average gate power Maximum peak gate current tp 5 ms, TJ = TJ maximum 12 PG(AV) Maximum peak gate power f = 50 Hz, TJ = TJ maximum 3 IGM Maximum peak negative gate voltage - VGT VGT A 10 4 TJ = 25 °C V 2.5 TJ = TJ maximum 1.7 Anode supply = 6 V, resistive load; Ra = 1 TJ = - 40 °C Maximum required DC gate current to trigger W 3 tp 5 ms, TJ = TJ maximum TJ = - 40 °C Maximum required DC gate voltage to trigger UNITS 270 Maximum gate voltage that will not trigger dI/dt 80 IGD Maximum rate of rise of turned-on current 150 VGD Maximum gate current that will not trigger TJ = 25 °C TJ = TJ maximum IGT mA 0.3 V 10 mA 300 A/µs VALUES UNITS TJ = TJ maximum, rated VDRM applied TJ = TJ maximum, ITM = 400 A rated VDRM applied THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction operating temperature range TEST CONDITIONS TJ - 40 to 125 Maximum storage temperature range TStg - 40 to 150 Maximum thermal resistance, junction to case per junction RthJC DC operation 0.18 Maximum thermal resistance, case to heatsink per module RthCS Mounting surface smooth, flat and greased 0.05 A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Lubricated threads. 4 to 6 Nm 200 g 7.1 oz. Mounting torque ± 10 % °C K/W IAP to heatsink busbar to IAP Approximate weight Case style New INT-A-PAK R CONDUCTION PER JUNCTION RECTANGULAR CONDUCTION AT TJ MAXIMUM SINUSOIDAL CONDUCTION AT TJ MAXIMUM DEVICES UNITS 180° VSKT152/04PbF 120° 90° 60° 30° 180° 120° 90° 60° 30° 0.007 0.010 0.013 0.016 0.017 0.009 0.012 0.014 0.016 0.017 K/W Note · Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Document Number: 94514 Revision: 25-Apr-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 3 VSKT152/04PbF 130 Thyristor/Thyristor, 150 A (New INT-A-PAK Power Module) VSKT152 VSKT152 RthJC (DC) = 0.182 K/W 120 110 Conduction Angle 100 30° 60° 90 90° 120° 180° 80 0 20 40 60 80 100 120 140 160 Maximum Average On-state Power Loss (W) Maximum Allowable Case Temperature (°C) Vishay High Power Products 300 DC 180° 120° 90° 60° 30° 250 200 150 RMS Limit 100 Conduction Period VSKT152 VSKT152 Tj = 125°C 50 0 0 50 Average On-state Current (A) 110 Conduction Period 100 30° 90 60° 80 90° 120° 70 180° DC 60 0 50 100 150 200 160 140 120 RMS Limit 100 80 Conduction Angle 60 40 VSKT152 VSKT152 Tj = 125°C 20 0 0 20 40 60 80 100 120 140 160 At Any Rated Load Condition And With Rated Vrrm Applied Following Surge. Initial Tj = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 3400 3200 3000 2800 2600 2400 2200 2000 VSKT152 VSKT152 Per Junction 1800 1600 1 10 4500 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control 4000 Of Conduction May Not Be Maintained. Initial Tj = 125°C No Voltage Reapplied 3500 Rated Vrrm Reapplied 3000 2500 2000 VSKT152 VSKT152 Per Junction 1500 0.01 www.vishay.com 4 0.1 1 Pulse Train Duration (s) Average On-state Current (A) Fig. 3 - Forward Power Loss Characteristics 100 Fig. 5 - Maximum Non-Repetitive Surge Current Peak Half Sine Wave On-state Current (A) Maximum Average On-state Power Loss (W) 180° 120° 90° 60° 30° 180 250 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 2 - Current Ratings Characteristics 200 3600 250 Average On-state Current (A) 220 200 Fig. 4 - Forward Power Loss Characteristics Peak Half Sine Wave On-state Current (A) Maximum Allowable Case Temperature (°C) VSKT152 VSKT152 RthJC (DC) = 0.182 K/W 120 150 Average On-state Current (A) Fig. 1 - Current Ratings Characteristics 130 100 Fig. 6 - Maximum Non-Repetitive Surge Current For technical questions, contact: ind-modules@vishay.com Document Number: 94514 Revision: 25-Apr-08 VSKT152/04PbF 500 0.2 5K /W 0.4 K/W VSKT152 VSKT152 Per Module Tj = 125°C 200 R elta -D Conduction Angle 300 K/W 0. 12 K/ 0.1 6K W /W 180° 120° 90° 60° 30° 400 .01 =0 SA Rth /W 4K 0.0 W K/ 08 0. Maximum Total On-state Power Loss (W) Thyristor/Thyristor, 150 A Vishay High Power Products (New INT-A-PAK Power Module) 0.6 K/W 1 K/W 100 0 0 0 100 150 200 250 300 350 50 Total RMS Output Current (A) 25 50 75 100 125 Maximum Allowable Ambient Temperature (°C) Fig. 7 - On-State Power Loss Characteristics 0. 08 600 K/ W 0.1 2K /W 400 R elta -D 180° (Sine) 180° (Rect) 500 /W 1K 0.0 700 = SA Rth 800 /W 4K 0.0 Maximum Total Power Loss (W) 900 0.2 K/W 0.35 K/W 300 2 x VSKT152 VSKT152 Single Phase Bridge Connected Tj = 125°C 200 100 0.6 K/W 0 0 50 100 150 200 250 Total Output Current (A) 0 300 25 50 75 100 125 Maximum Allowable Ambient Temperature (°C) Fig. 8 - On-State Power Loss Characteristics A hS Rt 1200 = 120° (Rect) 600 R 800 ta el -D 0.0 8K /W 0.1 K/W W K/ 1000 04 0. Maximum Total Power Loss (W) 1400 0.1 6K /W 400 0.25 K/W 0.4 K /W 200 1 K/W 0 0 100 200 300 400 Total Output Current (A) 0 500 25 50 75 100 125 Maximum Allowable Ambient Temperature (°C) Fig. 9 - On-State Power Loss Characteristics Document Number: 94514 Revision: 25-Apr-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 5 VSKT152/04PbF Thyristor/Thyristor, 150 A (New INT-A-PAK Power Module) Transient Thermal Impedance Z thJC (K/W) Vishay High Power Products Instantaneous On-state Current (A) 1000 100 Tj = 25°C 10 Tj = 125°C VSKT152 VSKT152 Per Junction 1 0.5 1 1.5 2 2.5 1 Steady State Value RthJC = 0.182 K/W (DC Operation) 0.1 0.01 VSKT152 VSKT152 0.001 0.001 Instantaneous On-state Voltage (V) Fig. 10 - On-State Voltage Drop Characteristics 10 Rectangular gate pulse a)Recommended load line for rated di/dt: 20 V, 20 ohms tr = 0.5 µs, tp >= 6 µs b)Recommended load line for = 6 µs 1 (1) PGM = 200 W, tp = 300 µs (2) PGM = 60 W, tp = 1 ms (3) PGM = 30 W, tp = 2 ms (4) PGM = 12 W, tp = 5 ms (a) TJ = 125 °C TJ = -40 °C (b) 1 0.1 Fig. 11 - Thermal Impedance ZthJC Characteristics TJ = 25 °C Instantaneous Gate Voltage (V) 100 0.01 Square Wave Pulse Duration (s) (4) (3) (2) (1) VGD IGD 0.1 0.001 0.01 Frequency Limited by PG(AV) VSKT152 VSKT152 0.1 1 10 100 1000 Instantaneous Gate Current (A) Fig. 12 - Gate Characteristics www.vishay.com 6 For technical questions, contact: ind-modules@vishay.com Document Number: 94514 Revision: 25-Apr-08 VSKT152/04PbF Thyristor/Thyristor, 150 A Vishay High Power Products (New INT-A-PAK Power Module) ORDERING INFORMATION TABLE VSK T 152 1 Device code 2 / 3 - 5 Module type 2 PbF 4 1 04 Circuit configuration: T = Two SCR doubler configuration 3 4 - Current rating Voltage rating (04 = 400 V) 5 - PbF = Lead (Pb)-free Note · To order the optional hardware go to www.vishay.com/doc?95172 CIRCUIT CONFIGURATION ~ 2 + 1 1 2 3 5 7 4 6 3 5 7 4 6 LINKS TO RELATED DOCUMENTS Dimensions Document Number: 94514 Revision: 25-Apr-08 http://www.vishay.com/doc?95067 For technical questions, contact: ind-modules@vishay.com www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1