NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| VR10 | N/A | Shortform Semicon, Diode, and SCR Datasheets |
1 pages, |
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| VR10 | N/A | Catalog Scans - Shortform Datasheet |
1 pages, |
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| VR100 | N/A | Shortform Semicon, Diode, and SCR Datasheets |
1 pages, |
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| VR10000 | NEC Electronics |
141 pages, |
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| VR10000 | NEC Electronics |
361 pages, |
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| VR10000 Series | NEC Electronics |
141 pages, |
Original | |
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| VR100A | N/A | Shortform Semicon, Diode, and SCR Datasheets |
1 pages, |
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| VR100B | N/A | Shortform Semicon, Diode, and SCR Datasheets |
1 pages, |
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| VR100X | Varo Semiconductor | Shortform Data Book |
1 pages, |
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| VR101S | Fluke | Over 600 obsolete distributor catalogs now available on the Datasheet Archive - VOLTAGE EVENT RECORDER SYSTEM |
1 pages, |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: PHOTODIODE Si PIN S9195 S9195 S9195Si PIN l : 0.28 A/W Typ. (=405 nm) l : 50 MHz Typ. (VR=10 V) l : 5.0 Ã- 5.0 mm l TO-8 l s VR Max. Topr Tstg 20 -40 +100 -55 +125 s (Ta=25 °C) p S ID Ct fc NEP =405 nm VR=10 V VR=10 V, f=1 MHz VR=10 V, RL=50 =405 nm, -3 dB VR=10 V, =p V °C °C Min. 0.25 - Typ. 320 1000 840 0.28 0.5 60 Max. 5 80 nm nm A/W nA pF 30 50 - MHz 2.5 Ã- ... | Original |
3 pages, |
KMPD1068J01 S9195 S9195 abstract |
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| Abstract: S5973 S5973 S5973-01 S5973-01 S5973-02 S5973-02 l l l l (S5973-02 S5973-02) S5971 S5971 : 100 MHz (VR=10 V) S5972 S5972 : 500 MHz (VR=10 V) S5973 S5973 : 1 GHz (VR=3.3 V) l l S5973-02 S5973-02: 0.3 A/W, QE=91 % (=410 nm) l , 0.37 0.07 *1: K: , L: *2: =410 nm *3: VR=10 V *4: VR=3.3 V p VR Max. (V , TCID (/°C) -40 +100 -55 +125 fc Ct f=1 MHz NEP VR=10 V =p (GHz) 0.1 , , RL=50 ) 10 GHz S5973 S5973 S5973 S5973 (VR=3.3 V) 1 GHz (dB) 0 -3 S5971 S5971 (VR=10 V) -10 ... | Original |
5 pages, |
S5973-02 S5973 photodiode S5973 S5972 S5971 S5973-01 S5971 abstract |
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| Abstract: PHOTODIODE Si PIN S4707-01 S4707-01 Si PIN l : 4.5 Ã- 5.5 mm l 4 DIP l : 2.4 Ã- 2.8 mm l s (Ta=25 °C) VR Max. Topr Tstg 20 -25 +85 -40 +100 s (Ta=25 °C) p S Isc ID fc Ct =p 100 lx, 2856 K VR=10 V VR=10 V, RL=50 -3 dB, =780 nm VR=10 V, f=1 MHz V °C °C Min. 0.5 - Typ. 320 1100 960 0.6 6.6 0.08 Max. 5 nm nm A/W uA nA - 20 - MHz - 14 30 pF 1 S4707-01 S4707-01 Si ... | Original |
2 pages, |
S4707-01 KPIN1070J01 S4707-01 abstract |
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| Abstract: 10-15 - - 3 8.7 Ã- 10-15 - pF W/Hz1/2 Min. - =p VR=10 V, VR=10 V, RL=50 =780 nm, -3 dB VR=10 V, f=1 MHz VR=10 V Max. Min. - - 0.5 - - S4204 S4204 Typ. 320 ... | Original |
3 pages, |
S4204 S3096 KMPD1039J04 S3096-02 S3096-02 abstract |
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| Abstract: PHOTODIODE Si PIN- S8558 S8558 16 S8558-16Si PIN- 161- l : 0.7 Ã- 2.0 mm (Ã- 16) l - l - l l l s (Ta=25 °C) VR Max. Topr Tstg 30 -40 +100 -40 +125 V °C °C s (Ta=25 °C, 1 ) p S Isc ID TCID fc Ct NEP =660 nm =780 nm =830 nm =p 100 lx VR=10 V VR=10 V, RL=50 =830 nm, -3 dB VR=10 V, f=1 MHz VR=10 V, =p Min. - Typ. 320 1100 960 0.45 0.57 0.62 0.72 1.0 0.05 1.15 ... | Original |
3 pages, |
S8558 KPSD1022J01 S8558 abstract |
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| Abstract: PHOTODIODE Si PIN S6801/S6968 S6801/S6968 14 mm 14 mmSi PINS6801 PINS6801, S6968 S6968, S6801-01 S6801-01, S6968-014 S6968-014 l 14 mm l (S6968 S6968): 50 MHz Typ. (VR=10 V, l=850 nm) l (S6801 S6801, S6968 S6968): 0.63 A/W (l=850 nm) l : ±35° l : S6801-01 S6801-01, S6968-01 S6968-01 l : 14 mm () l : 150 mm2 l l l l l l s (mm2) VR Max. (V) Topr (°C) S6801 S6801 S6801-01 S6801-01 S6968 S6968 S6968-01 S6968-01 Tstg (°C) 150 35 , =850 nm Isc 100 lx 2856 K ID VR=10 V fc * Ct VR=10 V VR=10 V RL=50 f=1 ... | Original |
2 pages, |
S6801-01 S6801 S6968-01 S6968 PINS6801 S6801/S6968 S6801/S6968 abstract |
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| Abstract: 0.52 0.55 S5821-02 S5821-02 S5821-03 S5821-03 * K: , L: Isc 100 lx ID VR=10 V (nA) (uA) 1.1 12 , +100 Ct fc VR=10 V VR=10 V f=1 MHz (MHz) (pF) 25 3 Tstg (°C) -55 +125 NEP VR=10 V =p (W/Hz1/2) 6.7 Ã- 10-15 1 Si PIN s S5821 S5821 s 20° (Typ. Ta=25 °C , ) KPINB0091JA KPINB0091JA KPINB0151JA KPINB0151JA s s (Typ.) +1.5 +10 (Typ. Ta=25 °C, =830 nm, RL=50 , VR=10 V ... | Original |
5 pages, |
S5821-03 S5821-02 S5821-01 S5821 S5821 abstract |
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| Abstract: PHOTODIODE Si PIN photodiode S9195 S9195 Si PIN photodiode for violet-laser detection S9195 S9195 is a Si PIN photodiode designed to have enhanced sensitivity in the emission wavelength range of violet-lasers. A high-speed response is achieved despite the large active area. Features Applications l High sensitivity: 0.28 A/W Typ. (=405 nm) l High-speed response: 50 MHz Typ. (VR=10 V) l Active area , fc NEP Condition =405 nm VR=10 V VR=10 V, f=1 MHz VR=10 V, RL=50 =405 nm, -3 dB VR=10 V ... | Original |
2 pages, |
SE-171 S9195 KPIN1068E01 S9195 abstract |
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| Abstract: ) S5971 S5971 : 100 MHz (VR=10 V) S5972 S5972 : 500 MHz (VR=10 V) S5973 S5973 series: 1.5 GHz (VR=10 V) l Low price l , Dark Cut-off coefficient circuit current capacitance frequency Ct of current ID fc VR=10 V VR=10 V ID Isc VR=10 V 830 100 l TCID (nA) f=1 MHz x nm (uA) Typ. Max. (times/°C) (GHz) (pF , borosilicate glass *2: =410 nm 0.1 1.15 0.5 1.5 3 1.5 1.6 NEP VR=10 V 3.1 Ã- 10-15 1.5 Ã- , response +10 s Cut-off frequency vs. reverse voltage (Typ. Ta=25 °C, =830 nm, RL=50 , VR=10 V ... | Original |
4 pages, |
S5973-02 S5973-01 S5973 S5972 S5971 S5971 abstract |
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| Abstract: UNIT TEST CONDITIONS Dark Current >D 1.0 nA VR - 10 V Terminal Capacitance 1.5 3.0 pP Vr-10 V, f- 1.0 MHz Quantum Efficiency 1 70 85 % X - 850 nm Rue Time tr 10 ns Vr-10 V, A-850 nm. 10-90 %. RL-50 RL-50 fi Fall Time tf 10 m Vr-10 V. X-850 X-850 nm. 90-10 %, RL-50 RL-50 fi NEC cannot mumi any responsibility ... | OCR Scan |
2 pages, |
RL-50 NDL2208 A850 10 A850 NDL2208 abstract |
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| Abstract: Reliable Electronic Solutions July, 2005 Manufacturers Representatives Corporate Distributor Product Managers Americas Sales Team Asia Sales Team Europe Sales Team Bourns Internal Bourns Plant Managers C D HIP IOD ES Bourns® Chip Diodes Product Obsolescence Notice Bourns will discontinue the Chip Diode products listed below, effective June 30, 2006. The last order date is March 31, 2006 with a scheduled shipment date of May 31, 2006. CD0603-B0145 CD0603-B0145, CD1005-B0145 CD1005-B0145, ... | Original |
1 pages, |
CD1005-B0245 b0140 CD0603-B0140L CD0603-B0140R CD0603-B0240 CD0603-B0245 CD1005-B0140L CD1005-B0140R CD1005-B0145 CD1005-B0240 b014 datasheet abstract |
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| Abstract: Reliable Electronic Solutions July, 2005 Manufacturers Representatives Corporate Distributor Product Managers Americas Sales Team Asia Sales Team Europe Sales Team Bourns Internal Bourns Plant Managers C D HIP IOD ES Bourns® Chip Diodes Product Obsolescence Notice Bourns will discontinue the Chip Diode products listed below, effective June 30, 2006. The last order date is March 31, 2006 with a scheduled shipment date of May 31, 2006. CD0603-B0145 CD0603-B0145, CD1005-B0145 CD1005-B0145, ... | Original |
2 pages, |
CD1005-B0245 CD1005-B0240 CD1005-B0145 CD1005-B0140R CD1005-B0140L CD0603-B0245 CD0603-B0240 CD0603-B0140R CD0603-B0140L datasheet abstract |
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| Abstract: PHOTODIODE Si S2551 S2551 S2551 S2551 Ã- 29.1 mm1 1.2 Si l : 1.2 Ã- 29.1 mm l l l l s VR Max. Topr Tstg 30 -20 +60 -20 +80 V °C °C s (Ta=25 °C) p S Isc ID TCID tr Ct Rsh NEP =p =663 nm 100 lx VR=10 mV VR=0 V, RL=1 k VR=0 V, f=10 kHz VR=10 mV VR=0 V, =p Min. 24 0.01 - Typ. , () 1 10 (V) KSPDB0175JA KSPDB0175JA KSPDB0174JA KSPDB0174JA s s (: mm) (Typ. VR=10 mV) 1 T 40.0 ± 0.7 ... | Original |
3 pages, |
S2551 S2551 abstract |
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| Abstract: ) (nA) (/°C) 0.4 5 0.9 10 1.15 0.5 5 1.0 10 ID Isc 100 lx VR=10 V (uA) 27 110 22 72 fc Ct RL=50 f=1 MHz VR=10 V VR=10 V (MHz) (pF) 20 40 10 150 20 40 15 80 NEP VR=10 V ... | Original |
4 pages, |
S7510 S7509 S5107 S5106 S5106 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
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| Sensing for VR10 Application 3 12 0.8375 1.65 > 130 5 VR10x 40 Ld QFN 40 Ld QFN T+R ISL6556A ISL6556A ISL6556A ISL6556A Optimized Multi-Phase Controller with 6-Bit DAC for VR10.X Applications 3 12 0.8375 1.6 > 120 5, 12 VR10 28 Ld SOIC 28 Ld SOIC T+R 32 Ld Programmable Internal Temperature Compensation for VR10.X Application 3 12 0.8375 1.6 > 120 5, 12 VR10 28 Ld SOIC 28 Ld SOIC T+R 32 Ld QFN 32 Ld QFN T+R ISL6561 ISL6561 ISL6561 ISL6561 www.datasheetarchive.com/files/intersil/device_pages/parametric_13818.html |
Intersil | 17/09/2006 | 12.38 Kb | HTML | parametric_13818.html |
| Integrated Power Stage 10 18 0.3 1.85 > 25 250 to 1000 3.3 VR9, VR10 56 Ld QFN -Voltage Regulation 3 3.6 0.3 1.85 > 150 250 to 1000 1.8 VR9, VR10 64 Ld QFN 64 Ld QFN +R ISL6556A ISL6556A ISL6556A ISL6556A Optimized Multi-Phase Controller with 6-Bit DAC for VR10.X Applications 3 12 0.8375 1.6 > 120 5, 12 VR10 28 Ld SOIC 28 Ld SOIC T+R 32 Ld QFN 32 Ld QFN Internal Temperature Compensation for VR10.X Application 3 12 0.8375 1.6 > 120 5, 12 www.datasheetarchive.com/files/intersil/device_pages/parametric_application_2354.html |
Intersil | 17/09/2006 | 18.37 Kb | HTML | parametric_application_2354.html |
| -Phase Buck PWM Controller with Integrated MOSFET Drivers for Intel VR10, VR11, and AMD Applications 3 12 0.375 1.6 >100 (4th FET Driver External) 5 VR10, VR11, AMD M2 6-Bit 48 Ld QFN for Intel VR10, VR11, and AMD Applications 5 13.2 0.375 1.6 120 5 Intel VR11/AMD VR11/AMD VR11/AMD VR11/AMD Interface for Intel VR10, VR11, and AMD Applications 3 12 0.375 1.99375 >100 (4th FET Driver External) 5 Overclocking, VR10, VR11, AMD M2 6-Bit 48 Ld QFN 48 Ld QFN T+R ISL6563 ISL6563 ISL6563 ISL6563 www.datasheetarchive.com/files/intersil/device_pages/parametric_13871.html |
Intersil | 17/09/2006 | 9.55 Kb | HTML | parametric_13871.html |
| 0.3 1.85 > 25 250 to 1000 3.3 VR9, VR10 56 Ld QFN 56 Ld QFN T+R Eval Board .85 > 150 250 to 1000 1.8 VR9, VR10 64 Ld QFN 64 Ld QFN T+R Device Datasheet Optimized Multi-Phase Controller with 6-Bit DAC for VR10.X Applications 3 12 0.8375 1.6 > 120 5, 12 VR10 28 Ld SOIC 28 Ld SOIC T+R 32 Ld QFN 32 Ld QFN T+R ISL6556B ISL6556B ISL6556B ISL6556B 10.X Application 3 12 0.8375 1.6 > 120 5, 12 VR10 28 Ld SOIC 28 Ld SOIC T www.datasheetarchive.com/files/intersil/device_pages/parametric_application_3780.html |
Intersil | 17/09/2006 | 15.47 Kb | HTML | parametric_application_3780.html |
| -Phase Buck PWM Controller with Integrated MOSFET Drivers for Intel VR10, VR11, and AMD Applications 3 12 0.375 1.6 >100 (4th FET Driver External) 5 VR10, VR11, AMD M2 6-Bit 48 Ld QFN for Intel VR10, VR11, and AMD Applications 5 13.2 0.375 1.6 120 5 Intel VR11/AMD VR11/AMD VR11/AMD VR11/AMD Interface for Intel VR10, VR11, and AMD Applications 3 12 0.375 1.99375 >100 (4th FET Driver External) 5 Overclocking, VR10, VR11, AMD M2 6-Bit 48 Ld QFN 48 Ld QFN T+R ISL6563 ISL6563 ISL6563 ISL6563 www.datasheetarchive.com/files/intersil/device_pages/parametric_13817_13818_13819_13871.html |
Intersil | 17/09/2006 | 45.42 Kb | HTML | parametric_13817_13818_13819_13871.html |
| 10 18 0.3 1.85 > 25 250 to 1000 3.3 VR9, VR10 56 Ld QFN 56 Ld QFN T 3.6 0.3 1.85 > 150 250 to 1000 1.8 VR9, VR10 64 Ld QFN 64 Ld QFN T Four-Phase Buck PWM Controller with Integrated MOSFET Drivers for Intel VR10, VR11, and AMD Applications 3 12 0.375 1.6 >100 (4th FET Driver External) 5 VR10, VR11, AMD M2 6-Bit DAC for VR10.X Applications 3 12 0.8375 1.6 > 120 5, 12 VR10 28 Ld SOIC 28 www.datasheetarchive.com/files/intersil/device_pages/parametric_application_3276.html |
Intersil | 17/09/2006 | 28.23 Kb | HTML | parametric_application_3276.html |
| 10 18 0.3 1.85 > 25 250 to 1000 3.3 VR9, VR10 56 Ld QFN 56 Ld QFN T 3.6 0.3 1.85 > 150 250 to 1000 1.8 VR9, VR10 64 Ld QFN 64 Ld QFN T Drivers for Intel VR10, VR11, and AMD Applications 3 12 0.375 1.6 >100 (4th FET Driver External) 5 VR10, VR11, AMD M2 6-Bit 48 Ld QFN 48 Ld QFN T+R ISL6326 ISL6326 ISL6326 ISL6326 4-Phase Optimized Multi-Phase Controller with 6-Bit DAC for VR10.X Applications 3 12 0.8375 1.6 > 120 www.datasheetarchive.com/files/intersil/device_pages/parametric_application_426.html |
Intersil | 17/09/2006 | 31.77 Kb | HTML | parametric_application_426.html |
| 10 18 0.3 1.85 > 25 250 to 1000 3.3 VR9, VR10 56 Ld QFN 56 Ld QFN T 3.6 0.3 1.85 > 150 250 to 1000 1.8 VR9, VR10 64 Ld QFN 64 Ld QFN T Controller with Integrated MOSFET Drivers for Intel VR10, VR11, and AMD Applications 3 12 0.375 1.6 >100 (4th FET Driver External) 5 VR10, VR11, AMD M2 6-Bit 48 Ld QFN 48 Ld QFN T Optimized Multi-Phase Controller with 6-Bit DAC for VR10.X Applications 3 12 0.8375 1.6 > 120 www.datasheetarchive.com/files/intersil/device_pages/parametric_application_2664.html |
Intersil | 17/09/2006 | 27.11 Kb | HTML | parametric_application_2664.html |
| 10 18 0.3 1.85 > 25 250 to 1000 3.3 VR9, VR10 56 Ld QFN 56 Ld QFN T 3.6 0.3 1.85 > 150 250 to 1000 1.8 VR9, VR10 64 Ld QFN 64 Ld QFN T Controller with Integrated MOSFET Drivers for Intel VR10, VR11, and AMD Applications 3 12 0.375 1.6 >100 (4th FET Driver External) 5 VR10, VR11, AMD M2 6-Bit 48 Ld QFN 48 Ld QFN T Optimized Multi-Phase Controller with 6-Bit DAC for VR10.X Applications 3 12 0.8375 1.6 > 120 www.datasheetarchive.com/files/intersil/device_pages/parametric_application_66.html |
Intersil | 17/09/2006 | 28.93 Kb | HTML | parametric_application_66.html |
| 0.3 1.85 > 25 250 to 1000 3.3 VR9, VR10 56 Ld QFN 56 Ld QFN T+R Eval Board .85 > 150 250 to 1000 1.8 VR9, VR10 64 Ld QFN 64 Ld QFN T+R ISL6592 ISL6592 ISL6592 ISL6592 6-Phase 10.X Applications 3 12 0.8375 1.6 > 120 5, 12 VR10 28 Ld SOIC 28 Ld SOIC with 6-Bit DAC and Programmable Internal Temperature Compensation for VR10.X Application 3 12 0.8375 1.6 > 120 5, 12 VR10 28 Ld SOIC 28 Ld SOIC T+R 32 Ld QFN 32 Ld QFN www.datasheetarchive.com/files/intersil/device_pages/parametric_application_6826.html |
Intersil | 17/09/2006 | 22.49 Kb | HTML | parametric_application_6826.html |
| Part | Manufacturer | Description | Shortform Datasheet | Ordering |
| VR10 | ST-Semiconductors Of Indiana | General Purpose Reference Regulator Diode | |
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| VR100 | ST-Semiconductors Of Indiana | General Purpose Reference Regulator Diode | |
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| VR100A | ST-Semiconductors Of Indiana | General Purpose Reference Regulator Diode | |
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| VR100B | ST-Semiconductors Of Indiana | General Purpose Reference Regulator Diode | |
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| VR100GB | EG&G, Inc. | General-Purpose Photovoltaic Cell - AC | |
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| VR100KB | EG&G, Inc. | General-Purpose Photovoltaic Cell - AC | |
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| VR100LB | EG&G, Inc. | General-Purpose Photovoltaic Cell - AC | |
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| VR100MB | EG&G, Inc. | General-Purpose Photovoltaic Cell - AC | |
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| VR1030 | Tecnetics, Inc. | Fixed Positive Voltage Regulator | |
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| VR105 | ST-Semiconductors Of Indiana | General Purpose Reference Regulator Diode | |
| Cornell Dubilier Part | Industry Part |
| NTE Electronics Part | Industry Part |
| NTE140A Buy | VR10 Buy |
| NTE140A Buy | VR10A Buy |
| NTE140A Buy | VR10B Buy |
| NTE5096A Buy | VR100B Buy |
| NTE5186A Buy | VR10E Buy |
| NTE5188A Buy | VR10F Buy |