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VQE 23 E

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VQE 23 E

Abstract: VQE 22 e transfer capacitance Vqe = 25 V, Vqe = 0 V, /= 1 MHz - 0.8 3.5 - 1 - Ig e s - nA 200 , . Static Characteristics Gate threshold voltage Vg e = K de, h = 2 m A K3E(th) Values typ. max. Unit V 4.5 5.5 6.5 Collector-emitter saturation voltage VGE= 15 V, /c = 50 A, 7j = 25 °C Vqe = KDE(sat) - 2.5 3.1 3 3.7 mA 15 V, lc = 50 A, 7] = 125 °C Ic e s - Zero gate voltage collector current Vqe = 1200 V, Vge = 0 v, 7j = 25 °C VqE = 1200 V, Vqe = 0 V, 7] = 125 °C Gate-emitter
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Abstract: MA /c e s VCE = 600 V, VqE = 0 V, 7] = 25 °C - - VCE = 600 V, VqE = 0 V, 7j = 150  , , V'qe = 15 V, isc < 1 0 (is, 7j< 150 °C Turn off safe operating area - - - 62 Vq E , capability E TO-220AB E TO-263AB £ SGP15N60 600 V h 15 A LU Type ^CE(sat) 2.3 V Package T\ 150 °C TO-220AB Ordering Code Q67041-A4711-A2 SGB15N60 TO , Gate-emitter voltage R g e ±20 V e as 85 mJ ^sc 10 ¡IS ^ to t Avalanche -
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SGW15N60 Q67041-A4711-A3 Q67040-S4235

vqe 23 f

Abstract: saturation voltage Vge= 15 V, /c = 25 A, 7j = 25 °C Vqe = 15 V, lc = 25 A, 7] = 125 °C Zero gate voltage collector current Vqe = 1200 V, Vge = 0 v, 7j = 25 °C VqE = 1200 V, Vqe = 0 V, 7] = 125 °C Gate-emitter leakage current Vqe = 20 V, Vqe = 0 V AC Characteristics Transconductance Vq E = 20 V, /c = 25 A Input capacitance Vq E = 25 V, Vqe = 0 V, /= 1 MHz Output capacitance Vqe = 25 V, Vqe = 0 V, /= 1 MHz Reverse , If = 25 A, 1/R = -600 V, Vqe = 0 V d \f/d t= -800 A/|js 7j = 25 °C 7] = 125 °C - 2.3 6 - -
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vqe 23 f C67076-A2505-A17 GM005944
Abstract: saturation voltage Vge= 15 V, /c = 50 A, 7j = 25 °C Vqe = 15 V, lc = 50 A, 7] = 125 °C Zero gate voltage collector current Vqe = 1200 V, Vge = 0 v, 7j = 25 °C Vq E Values typ. max. Unit K3E(th) 4.5 KDE(sat) - V 5.5 6.5 2.5 3.1 3 3.7 mA Ices - 0.8 4 - 1 = 1200 V, Vq e = 0 V, 7] = 125 °C Ig es Gate-emitter leakage current Vqe = 20 V, Vq e nA - =0V 200 AC Characteristics Transconductance Vqe = 20 V, /c = 50 A Input capacitance Vqe = 25 V, Vqe = 0 V, /= 1 MHz Output -
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C67076-A2514-A67

IRGP430U

Abstract: C600 ) ColIector-to-Emitter Saturation Voltage _ 2.3 3.0 V !c = 15A Vqe = 15V â'" 2.8 â'" le = 25A See Fig. 2, 5 â'" 2.6 , 4.5 S 4-° M 3.5 O > E UJ à 2.5 O O 111 1 c VQE =15V j aup s ~>L L> it  , (over 5kHz) See Fig. 1 for Current vs. Frequency curve c W ( G\¡ E n-channel VCES=500V VcE{sat) < 3.0V @Vqe = 15V, lc= 15A Description insulated Gate Bipolar Transistors (IGBTs) from International , © 50 Vqe Gate-to-Emitter Voltage ±20 V Earv Reverse Voltage Avalanche Energy ® 10 mJ Pd O To = 25Â
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IRGP430U C600 C602 C603

bsm 50 Gb 120 IGBT

Abstract: gate voltage collector current Vqe = 1200 V, Vge = 0 v , 7j = 25 °C Vq E = 1200 V, Vqe = 0 V, 7] = 125 °C G ate-em itter leakage current Vqe = 20 V, Vqe = 0 V AC Characteristics Transconductance Vq E = 20 V, /c = 25 A Input capacitance Vq E = 25 V, Vqe = 0 V, /= 1 MHz Output capacitance Vqe = 25 V, Vqe = , = 600 V, Vq E = 1 5 V, /c = 25 A ^Gon = 47 Q Turn-off delay tim e Vcc = 600 V, Vqe = -15 V, /c = 25 A ^Goff = 47 Q Fall tim e Vcc = 600 V, Vqe = -15 V, lc = 25 A ^Goff = 47 Q Free-W heel Diode Diode
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bsm 50 Gb 120 IGBT C67076-A2109-A70

VQE 23 E

Abstract: VQE 23 F Ic e s 2.5 3.1 3 3.7 mA VgE = 15 V, lc = 50 A, Zero gate voltage collector current Vqe = 1200 V, Vg E = 0 V, 7] = 25 °C Vq E = 1200 V, yGE = 0 V, 7] = 125 °C Gate-emitter leakage current Vqe = 20 V, Vqe = 0 V AC Characteristics Transconductance Vqe = 20 V, /c = 50 A Input capacitance Vqe = 25 , capacitance Vqe = 25 V, Vqe = 0 V, /= 1 MHz - 0.8 4 - 1 Ig es - nA 400 ô 'fs S 23 , Characteristics Gate threshold voltage Kse = Kde, h = 2 mA Collector-emitter saturation voltage Vg e Values
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VQE 23 E vqe 23 c VQE 23 D VQE 23 VQE 12 C67076-A2010-A70
Abstract: Zero gate voltage collector current Vqe = 1200 V, Vge = 0 v, 7j = 25 °C Vq E - 0.8 4 - 1 = 1200 V, Vq e = 0 V, 7] = 125 °C Ig e s - Gate-emitter leakage current Vqe = 20 V, Vq e = 0 , , Vqe = 0 V, /= 1 MHz nA - 200 9fs 23 Qss _ _ _ S PF 3300 _ Q)SS _ 500 _ , = 600 V, Vq E = 1 5 V, /c = 50 A ^Gon = 22 Q Turn-off delay time Vcc = 600 V, Vqe = -15 V, /c = 50 A , 2.3 1.8 2.8 M S If = 50 A, 1/R = -600 V, Vqe = 0 V d \f/d t= -800 A/ps, Tj = 125 °C Reverse -
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C67070-A2521-A67
Abstract: Gate-emitter leakage current Vqe = 2 0 nA 1 8 0 V, V q e = 0 V AC Characteristics Transconductance Vq E = 20 V, /c = 25 A Input capacitance Vq E = 25 V, Vqe = 0 V, /= 1 MHz Output capacitance Vqe = , If = 25 A, 1/R = -600 V, Vqe = 0 V d \f/d t= -800 A/|js 7j = 25 °C 7] = 125 °C - 2.3 6 - - , voltage K s e = K d e , Values typ. max. Unit K3E(th) 4 .5 5 .5 6 .5 V h = "I m A Collector-emitter saturation voltage V g e = 1 5 1 5 KDE(sat) 2 .5 3.1 3 3 .7 V, V -
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GD120DN2E3224 C67076-A2505-A67 C67070-A2505-A67

C67070-A2006-A70

Abstract: VGE = 15 V, lc = 200 A, 7] = 25 °C Vqe = 15 V, lc = 200 A, 7] = 125 °C Zero gate voltage collector current Vqe = 1200 V, Vqe = o V, 7] = 25 °C Vq E = 1200 V, Vqe = 0 V, 7] = 125 °C Gate-emitter leakage current Vqe = 20 V, Vqe = 0 V AC Characteristics Transconductance Vqe = 20 V, /c = 200 A Input capacitance Vqe = 25 V, Vqe = 0 V, /= 1 MHz Output capacitance Vqe = 25 V, Vqe = 0 V, /= 1 MHz Reverse transfer , /R = -600 V, Vqe = 0 V d \f/d t= -2000 A/|js 7j = 25 °C 7] = 125 °C 12 36 Qrr 0.5 M C frr 2.3 1.8 M S
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C67070-A2006-A70 C67076-A2006-A70

BSM35GD120DN2E3224

Abstract: VQE 23 E A, 7j A, 7] = 25 °C °C Ic e s 2.7 3 .3 3 .2 3 .9 V q e = 1 5 v , lc = 3 5 = 125 Zero gate voltage collector current V q e = 1 2 0 0 V , V g e = 0 v , 7j = 2 5 ° C VqE = 1200 mA 0 .6 2 .4 1 V, Vqe = 0 V, 7] = 125 °C Ig e s Gate-emitter leakage current Vqe = 20 , Symbol VC E Values 1200 Unit V K dgr 1200 VG E ±20 A 50 35 h fcpuls 100 70 ^tot 280 , Characteristics Gate threshold voltage Vge = VGE= K de, K 3 E (th ) 4 .5 5 .5 6 .5 Values typ. max. Unit
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BSM35GD120DN2E3224 C67076-A2506-A67 C67070-A2506-A67

vqe 21 d

Abstract: igbt module bsm 300 Collector-emitter saturation voltage VGE = 15 V, lc = 300 A, 7] = 25 °C Vqe = 15 V, lc = 300 A, 7] = 125 °C Zero gate voltage collector current Vqe = 1700 V, Vqe = o V, 7] = 25 °C Vq E = 1700 V, Vqe = 0 V, 7] = 125 °C Gate-emitter leakage current Vqe = 20 V, Vqe = 0 V AC Characteristics Transconductance Vqe = 20 V, /c = 300 A Input capacitance Vqe = 25 V, Vqe = 0 V, /= 1 MHz Output capacitance Vqe = 25 V, Vqe = 0 V, /= 1 MHz Reverse transfer capacitance Vqe = 25 V, Vqe = 0 V, /= 1 MHz Q ss Q )S S K3E(th) 4.8 KDE
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vqe 21 d igbt module bsm 300 vqe 21 f C67070-A2706-A67 C67070-A2708-A67

VQE 23 E

Abstract: VQE 23 F - Zero gate voltage collector current Vqe = 1700 V, Vqe = o V, 7] = 25 °C Vq E = 1700 V, Vqe = 0 , , Vqe = 0 V, Tj = 25 °C If = 200 A, Vqe = 0 V, 7] = 125 °C Reverse recovery time frr 2.3 2.1 2.8 , /-? qe = 20 kQ Gate-emitter voltage DC collector current Tc = 25 °C Tc = 8 0 °C Symbol VC E Values 1700 Unit V K dgr 1700 VG E ±20 A 290 200 h Pulsed collector current, tp = 1 ms Tc , Values typ. max. Unit K 3 E (th ) V 4.8 5.5 6.2 Collector-emitter saturation voltage VGE = 15
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C67070-A2705-A67 C67070-A2707-A67

C1645

Abstract: Vge = Kde, h = "1 2 mA Collector-emitter saturation voltage VGE = 15 V, lc = 300 A, 7] = 25 °C Vqe = 15 V, lc = 300 A, 7] = 125 °C Zero gate voltage collector current Vqe = 1200 V, Vqe = o V, 7] = 25 °C Vq E = 1200 V, Vqe = 0 V, 7] = 125 °C Gate-emitter leakage current Vqe = 20 V, Vqe = 0 V AC Characteristics Transconductance Vqe = 20 V, /c = 300 A Input capacitance Vqe = 25 V, Vqe = 0 V, /= 1 MHz Output , , Vqe = 0 V d \f/d t= -2500 A/ps 7j = 25 °C 7] = 125 °C 16 45 Qrr 0.6 M C frr 1.4 1.8 1.35 M S 2.3 V
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C1645 BSM300GA120DN2E3166 C67070-A2007-A70 BSM300GA120DN2E31

VF VQE 11 D

Abstract: A2701A K3E(th) 4.8 KDE(sat) - V 5.5 6.2 Kde, h = 4 mA C ollector-em itter saturation voltage VG E= 15 V, Vqe = /c = = 50 A, 7j 50 A, 7] = = 25 °C 125 °C Ic e s 3.4 4.6 3.9 5.3 mA 15 V, lc Zero gate voltage collector current Vqe = 1 700 V, Vg e = = 0 v, 7j , tim e Vcc = 1200 V, VqE = -15 V, /c = 50 A ^Goff = 27 Q Fall tim e Vcc = 1200 V, V'qe = -15 V, lc = 50 , , Vge = 0 V, Tj = 125 °C Reverse recovery tim e If = 50 A, 1/R = -1200 V, Vqe = 0 V d \f/d t= -600 A/ps
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VF VQE 11 D A2701A 67070-A2701-A67

3EML

Abstract: diodes ir ) Parameter Min. Typ. Max. Units Conditions VfB RICES Collector-to-Emitter Breakdown Voltage 500 â'" â'" V VQE , AV(BfflCEs/ATj Temp. Coeff. of Breakdown Voltage _ 0.47 â'" v/°c Vqe = 0V, lc= 1.0mA VcE(on , Transconductance ® 1.2 2.0 â'" S VCe=100V, le = 7.5A 'ces Zero Gate Voltage Collector Current â'" â'" 250 MA Vqe = , ) Parameter Min. Typ. Max. Units Conditions Q3 Total Gate Charge (turn-on) â'" 15 23 nC lc = 7.5A Vce = 400V , Time â'" 26 â'" ns Tj = 150°C, le = 7.5A, Vce = 400V Vqe = 15V, Rg = 50Ì1 Energy losses include
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IRGB420U 3EML diodes ir C-580 D-12 IRGB430U RGB430U

igbt module bsm 200 gb 120 dl

Abstract: = 50 A, Vqe = 0 V, Tj = 25 °C lF = 50 A, Vge = 0 V, 7j = 125 °C Reverse recovery tim e trr 2.3 , collector current Vqe = 1200 V, Vg E = 0 V, 7] = 25 °C Vq E = 1200 V, yGE = 0 V, 7] = 125 °C G ate-em itter , Vcc = 600 V, VgE = 15 V, lc = 50 A ^Gon = 22 Q Turn-off delay tim e Vcc = 600 V, Vqe = -15 V, lc = 50 A ^Goff = 22 Q Fall tim e Vcc = 600 V, Vqe = -15 V, lc = 50 A ^Goff = 22 Q Free-W heel Diode Diode , Vg e = Values typ. max. Unit K3E(th) 4.5 KDE(sat) - V 5.5 6.5 15 V, /c = 50 A, 7j =
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igbt module bsm 200 gb 120 dl

VQE 11

Abstract: saturation voltage Vg e = 15 V, /c = 75 A, 7j = 25 °C Vqe = 15 V, lc = 75 A, 7] = 125 °C Zero gate voltage , 6.2 3.4 4.6 3.9 5.3 mA Ic e s - 7j = 25 °C 0.5 2 - 0.75 Vq E = 1700 V, Vqe = 0 , Transconductance Vq E = 20 V, /c = 75 A Input capacitance Vq E = 25 V, Vqe = 0 V, /= 1 MHz O utput capacitance Vqe , = 15 V, /c = 75 A ^Gon = 22 Q Turn-off delay tim e Vcc = 1200 V, VqE = -15 V, lc = 75 A ^Goff = 22 Q Fall tim e Vcc = 1200 V, V'qe = -15 V, lc = 75 A ^Goff = 22 Q Free-W heel Diode Diode forward voltage I
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VQE 11 67070-A2702-A67

vqe 24 d

Abstract: JS7J threshold voltage Vqe = Vqe /q = 0.35 mA Collector-emitter saturation voltage Vr G E= 15 V, /c = 10 A, 7] = 2 5 °C VGE= 15 V, /c = 10 A, 7j = 125 °C Zero gate voltage collector current Vqe = 600 V, VGE = 0 V, 7] = 25 °C Gate-emitter leakage current Vqe = 25 V, Vqe = 0 V AC Characteristics Transconductance Vqe = 20 V, /q = 10 A Input capacitance Vq E = 25 V, Vq E = o V, /= 1 MHz Output capacitance Vqe = 25 , dgr Values 600 Unit V 600 VGE h 11.5 10 fcpuls 23 20 ^tot 30 T\ ^stg = T O C_ ±20 A W
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vqe 24 d JS7J Q67050-A0001-A67

VQE 11

Abstract: VQE 23 D = 125 °C Reverse recovery charge If = 25 A, 1/R = -600 V, Vqe = 0 V Vq e = -15 V, lc = 25 A 50 , Symbol VC E Values 1200 Unit V K dgr 1200 VG E ±20 A 38 25 h fcpuls 76 50 ^tot 200 T , 15 V, /c = 25 A, 7 ^ = 125 °C Zero gate voltage collector current Vqe = 1200 V, VGE = 0 V, 7] = 25 °C VCE = 1200 V, yGE = 0 V, 7] = 125 °C Gate-emitter leakage current Vqe = 20 V, Vqe = 0 V AC Characteristics Transconductance Vc e ô'fs Values typ. max. Unit KàEith) 4.5 ^CEfsat) - V 5.5 6.5
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C67076-A2009-A70
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